Abstract

We analyze physical models accounting for deep-level conduction band transitions to describe impurity absorption spectra in tetrahedral-structured semiconductors. The investigations were carried out for ZnSe crystals doped with transition metals (Ti, V, Cr, Mn, Fe, Co, Ni) from a vapor phase. It was shown that the impurities provide acceptor centers with ground state energy offset by 0.3–0.6 eV from the edge of the conduction band, forming long-wave bands in the absorption spectra of the materials studied.

© 2014 Optical Society of America

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