Abstract

ZnO1xSex (0x0.11) thin films have been grown on sapphire (cAl2O3) substrates at the temperature of 350°C by means of the radio-frequency magnetron sputtering technique. The optical transmission, reflectance, and luminescence spectra at room temperature were analyzed. Using the λ-modulation method gives the possibility to reveal the main features of the energy band structure and the nature of the radiative transitions that cause ultraviolet luminescence.

© 2014 Optical Society of America

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2013 (1)

V. V. Khomyak, M. M. Slyotov, I. I. Shtepliuk, G. V. Lashkarev, O. M. Slyotov, P. D. Marianchuk, and V. V. Kosolovskiy, “Annealing effect on the near-band edge emission of ZnO,” J. Phys. Chem. Solids 74, 291–297 (2013).

2012 (3)

I. Shtepliuk, G. Lashkarev, V. Khomyak, O. Lytvyn, P. Marianchuk, I. Timofeeva, A. Ievtushenko, and V. Lazorenko, “Features of the influence of the deposition power and Ar/O 2 gas ratio on the microstructure and optical properties of the Zn0.9Cd0.1O films,” Thin Solid Films 520, 4772–4777 (2012).
[CrossRef]

V. Khomyak, M. Slyotov, I. Shtepliuk, O. Slyotov, and V. Kosolovskiy, “Effect of Se isoelectronic impurity on the luminescence features of the ZnO,” Acta Phys. Pol. A 122, 1039–1041 (2012).

X. Xu, C. Xu, J. Dai, J. Pan, and J. Hu, “Evolutions of defects and blue–green emissions in ZnO microwhiskers fabricated by vapor-phase transport,” J. Phys. Chem. Solids 73, 858–862 (2012).
[CrossRef]

2011 (1)

I. Shtepliuk, G. Lashkarev, O. Khyzhun, B. Kowalski, A. Reszka, V. Khomyak, V. Lazorenko, and I. Timofeeva, “Enhancement of the ultraviolet luminescence intensity from Cd-doped ZnO films caused by exciton binding,” Acta Phys. Pol. A 120, 914–917 (2011).

2010 (3)

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater. 20, 561–572 (2010).
[CrossRef]

M. A. Mayer, D. T. Speaks, K. M. Yu, S. S. Mao, E. E. Haller, and W. Walukiewicz, “Band structure engineering of ZnO1–x Sex alloys,” Appl. Phys. Lett. 97, 022104 (2010).
[CrossRef]

H. L. Pan, B. Yao, M. Ding, R. Deng, T. Yang, Y. R. Sui, T. T. Zhao, and L. L. Gao, “Characterization and properties of Zn–O–Se ternary system thin films deposited by radio-frequency (rf)-magnetron sputtering,” J. Non-Cryst. Solids 356, 906–910 (2010).
[CrossRef]

2009 (3)

H. Zeng, S. Yang, X. Xu, and W. Cai, “Dramatic excitation dependence of strong and stable blue luminescence of ZnO hollow nanoparticles,” Appl. Phys. Lett. 95, 191904 (2009).
[CrossRef]

A. González, M. Herrera-Zaldívar, J. Valenzuela, A. Escobedo-Morales, and U. Pa, “CL study of yellow emission in ZnO nanostructures annealed in Ar and O2 atmospheres,” Superlattices Microstruct. 45, 421–428 (2009).
[CrossRef]

G. Muñoz-Hernández, A. Escobedo-Morales, and U. Pal, “Thermolytic growth of ZnO nanocrystals: morphology control and optical properties,” Cryst. Growth Des. 9, 297–300 (2009).
[CrossRef]

2008 (1)

Y. W. Zhang, X. M. Li, W. D. Yu, X. D. GaO, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO—based heterojunction light-emitting diode on Si (111) substrate by pulsed laser deposition,” J. Phys. D 41, 205105 (2008).
[CrossRef]

2007 (1)

Y. R. Ryu, J. A. Lubguban, T. S. Lee, H. W. White, T. S. Jeong, C. J. Youn, and B. J. Kim, “Excitonic ultraviolet lasing in ZnO—based light emitting devices,” Appl. Phys. Lett. 90, 131115 (2007).
[CrossRef]

2006 (2)

C. Y. Moon, S. H. Wei, Y. Z. Zhu, and G. D. Chen, “Band-gap bowing coefficients in large size-mismatched II-VI alloys: first-principles calculations,” Phys. Rev. B 74, 233202 (2006).
[CrossRef]

A. B. Djurišić and Y. H. Leung, “Optical properties of ZnO,” Nanostruct. Small 2, 944–961 (2006).

2005 (3)

T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
[CrossRef]

U. Ozgur, J. I. Alilov, C. Lin, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoe, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98, 041301 (2005).
[CrossRef]

R. C. Wang, C. P. Liu, J. L. Huang, and S. J. Chen, “ZnO symmetric nanosheets integrated with nanowalls,” Appl. Phys. Lett. 87, 053103 (2005).
[CrossRef]

2004 (4)

V. P. Makhniy, M. M. Slyotov, E. V. Stets, I. V. Tkachenko, V. V. Gorley, and P. P. Horley, “Application of modulation spectroscopy for determination of recombination center parameters,” Thin Solid Films 450, 222–225 (2004).
[CrossRef]

D. Li, Y. H. Leung, A. B. Djurišić, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan, “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods,” Appl. Phys. Lett. 85, 1601–1603 (2004).
[CrossRef]

V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, “Zinc oxide—analog of GaN with new perspective possibilities,” Cryst. Res. Technol. 39, 980–992 (2004).
[CrossRef]

J. Wang, G. Du, Y. Zhang, B. Zhao, X. Yang, and D. Liu, “Luminescence properties of ZnO films annealed in growth ambient and oxygen,” J. Cryst. Growth 263, 269–272 (2004).
[CrossRef]

2002 (2)

K. Iwata, P. Fons, A. Yamada, H. Shibata, K. Matsubara, K. Nakahara, H. Takasu, and S. Niki, “Bandgap engineering of ZnO using Se,” Phys. Status Solidi B 229, 887–890 (2002).

N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, “Role of copper in the green luminescence from ZnO crystals,” Appl. Phys. Lett. 81, 622–624 (2002).
[CrossRef]

2001 (2)

B. Lin, Z. Fu, and Y. Yia, “Green luminescent center in undoped zinc oxide films deposited on silicon substrates,” Appl. Phys. Lett. 79, 943–945 (2001).
[CrossRef]

X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78, 2285–2287 (2001).
[CrossRef]

2000 (3)

T. Sekiguchi, S. Miyashita, K. Obara, T. Shishido, and N. Sakagami, “Hydrothermal growth of ZnO single crystals and their optical characterization,” J. Cryst. Growth 214–215, 72–76 (2000).
[CrossRef]

Y. Chen, D. Bagnall, and T. Yao, “ZnO as a novel photonic material for the UV region,” Mater. Sci. Eng. B 75, 190–198 (2000).
[CrossRef]

Y. Li, G. W. Meng, L. D. Zhang, and F. Phillipp, “Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties,” Appl. Phys. Lett. 76, 2011–2013 (2000).
[CrossRef]

1996 (1)

K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68, 403–407 (1996).
[CrossRef]

1993 (1)

T. Paskova and R. Yakimova, “Effect of Sb doping on point defect ensemble in MOVPE—GaAs,” Solid State Commun. 87, 1125–1127 (1993).
[CrossRef]

1985 (1)

A. N. Georgobiani, Y. V. Ozerov, and I. M. Tighinianu, “A study of the fundamental transitions in wide-gap semiconductors by modulation spectroscopy methods,” Proc. FIAN 163, 3–38 (1985).

1973 (1)

A. Baldereschi, “Theory of isoelectronic traps,” J. Lumin. 7, 79–91 (1973).
[CrossRef]

1971 (1)

J. W. Allen, “Isoelectronic impurities in semiconductors: a survey of binding mechanisms,” J. Phys. C 4, 1936–1944 (1971).
[CrossRef]

1970 (1)

E. Koh and D. W. Langer, “Luminescence of ZnSe near the band edge under strong laser light excitation,” J. Lumin. 1–2, 514–527 (1970).
[CrossRef]

1966 (1)

J. J. Hopfield, D. G. Thomas, and R. T. Lynch, “Isoelectronic donors and acceptors,” Phys. Rev. Lett. 17, 312–315 (1966).
[CrossRef]

Akira, O.

T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
[CrossRef]

Alilov, J. I.

U. Ozgur, J. I. Alilov, C. Lin, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoe, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98, 041301 (2005).
[CrossRef]

Allen, J. W.

J. W. Allen, “Isoelectronic impurities in semiconductors: a survey of binding mechanisms,” J. Phys. C 4, 1936–1944 (1971).
[CrossRef]

Atsushi, T.

T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
[CrossRef]

Aven, M.

M. Aven and J. S. Prener, Physics and Chemistry of II-VI Compounds (North-Holland, 1967).

Avrutin, V.

U. Ozgur, J. I. Alilov, C. Lin, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoe, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98, 041301 (2005).
[CrossRef]

Bagnall, D.

Y. Chen, D. Bagnall, and T. Yao, “ZnO as a novel photonic material for the UV region,” Mater. Sci. Eng. B 75, 190–198 (2000).
[CrossRef]

Bai, L.

N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, “Role of copper in the green luminescence from ZnO crystals,” Appl. Phys. Lett. 81, 622–624 (2002).
[CrossRef]

Baldereschi, A.

A. Baldereschi, “Theory of isoelectronic traps,” J. Lumin. 7, 79–91 (1973).
[CrossRef]

Baturin, V. A.

V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, “Zinc oxide—analog of GaN with new perspective possibilities,” Cryst. Res. Technol. 39, 980–992 (2004).
[CrossRef]

Cai, W.

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater. 20, 561–572 (2010).
[CrossRef]

H. Zeng, S. Yang, X. Xu, and W. Cai, “Dramatic excitation dependence of strong and stable blue luminescence of ZnO hollow nanoparticles,” Appl. Phys. Lett. 95, 191904 (2009).
[CrossRef]

Cantwell, G.

N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, “Role of copper in the green luminescence from ZnO crystals,” Appl. Phys. Lett. 81, 622–624 (2002).
[CrossRef]

Cardona, M.

Y. Y. Peter and M. Cardona, Fundamentals of Semiconductors. Physics and Materials Properties (Springer, 2010).

Chan, W. K.

D. Li, Y. H. Leung, A. B. Djurišić, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan, “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods,” Appl. Phys. Lett. 85, 1601–1603 (2004).
[CrossRef]

Chen, G. D.

C. Y. Moon, S. H. Wei, Y. Z. Zhu, and G. D. Chen, “Band-gap bowing coefficients in large size-mismatched II-VI alloys: first-principles calculations,” Phys. Rev. B 74, 233202 (2006).
[CrossRef]

Chen, S. J.

R. C. Wang, C. P. Liu, J. L. Huang, and S. J. Chen, “ZnO symmetric nanosheets integrated with nanowalls,” Appl. Phys. Lett. 87, 053103 (2005).
[CrossRef]

Chen, Y.

Y. Chen, D. Bagnall, and T. Yao, “ZnO as a novel photonic material for the UV region,” Mater. Sci. Eng. B 75, 190–198 (2000).
[CrossRef]

Chichibu, S. F.

T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
[CrossRef]

Cho, S. J.

U. Ozgur, J. I. Alilov, C. Lin, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoe, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98, 041301 (2005).
[CrossRef]

Chtani, K.

T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
[CrossRef]

Dai, J.

X. Xu, C. Xu, J. Dai, J. Pan, and J. Hu, “Evolutions of defects and blue–green emissions in ZnO microwhiskers fabricated by vapor-phase transport,” J. Phys. Chem. Solids 73, 858–862 (2012).
[CrossRef]

Deng, R.

H. L. Pan, B. Yao, M. Ding, R. Deng, T. Yang, Y. R. Sui, T. T. Zhao, and L. L. Gao, “Characterization and properties of Zn–O–Se ternary system thin films deposited by radio-frequency (rf)-magnetron sputtering,” J. Non-Cryst. Solids 356, 906–910 (2010).
[CrossRef]

Ding, M.

H. L. Pan, B. Yao, M. Ding, R. Deng, T. Yang, Y. R. Sui, T. T. Zhao, and L. L. Gao, “Characterization and properties of Zn–O–Se ternary system thin films deposited by radio-frequency (rf)-magnetron sputtering,” J. Non-Cryst. Solids 356, 906–910 (2010).
[CrossRef]

Djurišic, A. B.

A. B. Djurišić and Y. H. Leung, “Optical properties of ZnO,” Nanostruct. Small 2, 944–961 (2006).

D. Li, Y. H. Leung, A. B. Djurišić, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan, “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods,” Appl. Phys. Lett. 85, 1601–1603 (2004).
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V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, “Zinc oxide—analog of GaN with new perspective possibilities,” Cryst. Res. Technol. 39, 980–992 (2004).
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J. Wang, G. Du, Y. Zhang, B. Zhao, X. Yang, and D. Liu, “Luminescence properties of ZnO films annealed in growth ambient and oxygen,” J. Cryst. Growth 263, 269–272 (2004).
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H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater. 20, 561–572 (2010).
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V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, “Zinc oxide—analog of GaN with new perspective possibilities,” Cryst. Res. Technol. 39, 980–992 (2004).
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B. Lin, Z. Fu, and Y. Yia, “Green luminescent center in undoped zinc oxide films deposited on silicon substrates,” Appl. Phys. Lett. 79, 943–945 (2001).
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T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
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A. González, M. Herrera-Zaldívar, J. Valenzuela, A. Escobedo-Morales, and U. Pa, “CL study of yellow emission in ZnO nanostructures annealed in Ar and O2 atmospheres,” Superlattices Microstruct. 45, 421–428 (2009).
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V. P. Makhniy, M. M. Slyotov, E. V. Stets, I. V. Tkachenko, V. V. Gorley, and P. P. Horley, “Application of modulation spectroscopy for determination of recombination center parameters,” Thin Solid Films 450, 222–225 (2004).
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Y. W. Zhang, X. M. Li, W. D. Yu, X. D. GaO, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO—based heterojunction light-emitting diode on Si (111) substrate by pulsed laser deposition,” J. Phys. D 41, 205105 (2008).
[CrossRef]

Haller, E. E.

M. A. Mayer, D. T. Speaks, K. M. Yu, S. S. Mao, E. E. Haller, and W. Walukiewicz, “Band structure engineering of ZnO1–x Sex alloys,” Appl. Phys. Lett. 97, 022104 (2010).
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Halliburton, L. E.

N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, “Role of copper in the green luminescence from ZnO crystals,” Appl. Phys. Lett. 81, 622–624 (2002).
[CrossRef]

Herrera-Zaldívar, M.

A. González, M. Herrera-Zaldívar, J. Valenzuela, A. Escobedo-Morales, and U. Pa, “CL study of yellow emission in ZnO nanostructures annealed in Ar and O2 atmospheres,” Superlattices Microstruct. 45, 421–428 (2009).
[CrossRef]

Hopfield, J. J.

J. J. Hopfield, D. G. Thomas, and R. T. Lynch, “Isoelectronic donors and acceptors,” Phys. Rev. Lett. 17, 312–315 (1966).
[CrossRef]

Horley, P. P.

V. P. Makhniy, M. M. Slyotov, E. V. Stets, I. V. Tkachenko, V. V. Gorley, and P. P. Horley, “Application of modulation spectroscopy for determination of recombination center parameters,” Thin Solid Films 450, 222–225 (2004).
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Hu, J.

X. Xu, C. Xu, J. Dai, J. Pan, and J. Hu, “Evolutions of defects and blue–green emissions in ZnO microwhiskers fabricated by vapor-phase transport,” J. Phys. Chem. Solids 73, 858–862 (2012).
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R. C. Wang, C. P. Liu, J. L. Huang, and S. J. Chen, “ZnO symmetric nanosheets integrated with nanowalls,” Appl. Phys. Lett. 87, 053103 (2005).
[CrossRef]

Ievtushenko, A.

I. Shtepliuk, G. Lashkarev, V. Khomyak, O. Lytvyn, P. Marianchuk, I. Timofeeva, A. Ievtushenko, and V. Lazorenko, “Features of the influence of the deposition power and Ar/O 2 gas ratio on the microstructure and optical properties of the Zn0.9Cd0.1O films,” Thin Solid Films 520, 4772–4777 (2012).
[CrossRef]

Iwata, K.

K. Iwata, P. Fons, A. Yamada, H. Shibata, K. Matsubara, K. Nakahara, H. Takasu, and S. Niki, “Bandgap engineering of ZnO using Se,” Phys. Status Solidi B 229, 887–890 (2002).

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C. Jagadish and S. Pearton, Zinc Oxide: Bulk, Thin Films and Nanostructures (Elsevier, 2006).

Jeong, T. S.

Y. R. Ryu, J. A. Lubguban, T. S. Lee, H. W. White, T. S. Jeong, C. J. Youn, and B. J. Kim, “Excitonic ultraviolet lasing in ZnO—based light emitting devices,” Appl. Phys. Lett. 90, 131115 (2007).
[CrossRef]

Kainuma, H.

T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
[CrossRef]

Karpenko, A. J.

V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, “Zinc oxide—analog of GaN with new perspective possibilities,” Cryst. Res. Technol. 39, 980–992 (2004).
[CrossRef]

Karpina, V. A.

V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, “Zinc oxide—analog of GaN with new perspective possibilities,” Cryst. Res. Technol. 39, 980–992 (2004).
[CrossRef]

Kawasaki, M.

T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
[CrossRef]

Khomyak, V.

V. Khomyak, M. Slyotov, I. Shtepliuk, O. Slyotov, and V. Kosolovskiy, “Effect of Se isoelectronic impurity on the luminescence features of the ZnO,” Acta Phys. Pol. A 122, 1039–1041 (2012).

I. Shtepliuk, G. Lashkarev, V. Khomyak, O. Lytvyn, P. Marianchuk, I. Timofeeva, A. Ievtushenko, and V. Lazorenko, “Features of the influence of the deposition power and Ar/O 2 gas ratio on the microstructure and optical properties of the Zn0.9Cd0.1O films,” Thin Solid Films 520, 4772–4777 (2012).
[CrossRef]

I. Shtepliuk, G. Lashkarev, O. Khyzhun, B. Kowalski, A. Reszka, V. Khomyak, V. Lazorenko, and I. Timofeeva, “Enhancement of the ultraviolet luminescence intensity from Cd-doped ZnO films caused by exciton binding,” Acta Phys. Pol. A 120, 914–917 (2011).

Khomyak, V. V.

V. V. Khomyak, M. M. Slyotov, I. I. Shtepliuk, G. V. Lashkarev, O. M. Slyotov, P. D. Marianchuk, and V. V. Kosolovskiy, “Annealing effect on the near-band edge emission of ZnO,” J. Phys. Chem. Solids 74, 291–297 (2013).

Khyzhun, O.

I. Shtepliuk, G. Lashkarev, O. Khyzhun, B. Kowalski, A. Reszka, V. Khomyak, V. Lazorenko, and I. Timofeeva, “Enhancement of the ultraviolet luminescence intensity from Cd-doped ZnO films caused by exciton binding,” Acta Phys. Pol. A 120, 914–917 (2011).

Kim, B. J.

Y. R. Ryu, J. A. Lubguban, T. S. Lee, H. W. White, T. S. Jeong, C. J. Youn, and B. J. Kim, “Excitonic ultraviolet lasing in ZnO—based light emitting devices,” Appl. Phys. Lett. 90, 131115 (2007).
[CrossRef]

Koh, E.

E. Koh and D. W. Langer, “Luminescence of ZnSe near the band edge under strong laser light excitation,” J. Lumin. 1–2, 514–527 (1970).
[CrossRef]

Kong, J. F.

Y. W. Zhang, X. M. Li, W. D. Yu, X. D. GaO, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO—based heterojunction light-emitting diode on Si (111) substrate by pulsed laser deposition,” J. Phys. D 41, 205105 (2008).
[CrossRef]

Kopylova, L. I.

V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, “Zinc oxide—analog of GaN with new perspective possibilities,” Cryst. Res. Technol. 39, 980–992 (2004).
[CrossRef]

Kosolovskiy, V.

V. Khomyak, M. Slyotov, I. Shtepliuk, O. Slyotov, and V. Kosolovskiy, “Effect of Se isoelectronic impurity on the luminescence features of the ZnO,” Acta Phys. Pol. A 122, 1039–1041 (2012).

Kosolovskiy, V. V.

V. V. Khomyak, M. M. Slyotov, I. I. Shtepliuk, G. V. Lashkarev, O. M. Slyotov, P. D. Marianchuk, and V. V. Kosolovskiy, “Annealing effect on the near-band edge emission of ZnO,” J. Phys. Chem. Solids 74, 291–297 (2013).

Kowalski, B.

I. Shtepliuk, G. Lashkarev, O. Khyzhun, B. Kowalski, A. Reszka, V. Khomyak, V. Lazorenko, and I. Timofeeva, “Enhancement of the ultraviolet luminescence intensity from Cd-doped ZnO films caused by exciton binding,” Acta Phys. Pol. A 120, 914–917 (2011).

Langer, D. W.

E. Koh and D. W. Langer, “Luminescence of ZnSe near the band edge under strong laser light excitation,” J. Lumin. 1–2, 514–527 (1970).
[CrossRef]

Lashkarev, C. V.

V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, “Zinc oxide—analog of GaN with new perspective possibilities,” Cryst. Res. Technol. 39, 980–992 (2004).
[CrossRef]

Lashkarev, G.

I. Shtepliuk, G. Lashkarev, V. Khomyak, O. Lytvyn, P. Marianchuk, I. Timofeeva, A. Ievtushenko, and V. Lazorenko, “Features of the influence of the deposition power and Ar/O 2 gas ratio on the microstructure and optical properties of the Zn0.9Cd0.1O films,” Thin Solid Films 520, 4772–4777 (2012).
[CrossRef]

I. Shtepliuk, G. Lashkarev, O. Khyzhun, B. Kowalski, A. Reszka, V. Khomyak, V. Lazorenko, and I. Timofeeva, “Enhancement of the ultraviolet luminescence intensity from Cd-doped ZnO films caused by exciton binding,” Acta Phys. Pol. A 120, 914–917 (2011).

Lashkarev, G. V.

V. V. Khomyak, M. M. Slyotov, I. I. Shtepliuk, G. V. Lashkarev, O. M. Slyotov, P. D. Marianchuk, and V. V. Kosolovskiy, “Annealing effect on the near-band edge emission of ZnO,” J. Phys. Chem. Solids 74, 291–297 (2013).

Lazorenko, V.

I. Shtepliuk, G. Lashkarev, V. Khomyak, O. Lytvyn, P. Marianchuk, I. Timofeeva, A. Ievtushenko, and V. Lazorenko, “Features of the influence of the deposition power and Ar/O 2 gas ratio on the microstructure and optical properties of the Zn0.9Cd0.1O films,” Thin Solid Films 520, 4772–4777 (2012).
[CrossRef]

I. Shtepliuk, G. Lashkarev, O. Khyzhun, B. Kowalski, A. Reszka, V. Khomyak, V. Lazorenko, and I. Timofeeva, “Enhancement of the ultraviolet luminescence intensity from Cd-doped ZnO films caused by exciton binding,” Acta Phys. Pol. A 120, 914–917 (2011).

Lazorenko, V. I.

V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, “Zinc oxide—analog of GaN with new perspective possibilities,” Cryst. Res. Technol. 39, 980–992 (2004).
[CrossRef]

Lee, T. S.

Y. R. Ryu, J. A. Lubguban, T. S. Lee, H. W. White, T. S. Jeong, C. J. Youn, and B. J. Kim, “Excitonic ultraviolet lasing in ZnO—based light emitting devices,” Appl. Phys. Lett. 90, 131115 (2007).
[CrossRef]

Leung, Y. H.

A. B. Djurišić and Y. H. Leung, “Optical properties of ZnO,” Nanostruct. Small 2, 944–961 (2006).

D. Li, Y. H. Leung, A. B. Djurišić, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan, “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods,” Appl. Phys. Lett. 85, 1601–1603 (2004).
[CrossRef]

Li, D.

D. Li, Y. H. Leung, A. B. Djurišić, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan, “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods,” Appl. Phys. Lett. 85, 1601–1603 (2004).
[CrossRef]

Li, X. M.

Y. W. Zhang, X. M. Li, W. D. Yu, X. D. GaO, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO—based heterojunction light-emitting diode on Si (111) substrate by pulsed laser deposition,” J. Phys. D 41, 205105 (2008).
[CrossRef]

Li, Y.

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater. 20, 561–572 (2010).
[CrossRef]

Y. Li, G. W. Meng, L. D. Zhang, and F. Phillipp, “Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties,” Appl. Phys. Lett. 76, 2011–2013 (2000).
[CrossRef]

Lin, B.

B. Lin, Z. Fu, and Y. Yia, “Green luminescent center in undoped zinc oxide films deposited on silicon substrates,” Appl. Phys. Lett. 79, 943–945 (2001).
[CrossRef]

Lin, C.

U. Ozgur, J. I. Alilov, C. Lin, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoe, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98, 041301 (2005).
[CrossRef]

Liu, C. P.

R. C. Wang, C. P. Liu, J. L. Huang, and S. J. Chen, “ZnO symmetric nanosheets integrated with nanowalls,” Appl. Phys. Lett. 87, 053103 (2005).
[CrossRef]

Liu, D.

J. Wang, G. Du, Y. Zhang, B. Zhao, X. Yang, and D. Liu, “Luminescence properties of ZnO films annealed in growth ambient and oxygen,” J. Cryst. Growth 263, 269–272 (2004).
[CrossRef]

Liu, Z. T.

D. Li, Y. H. Leung, A. B. Djurišić, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan, “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods,” Appl. Phys. Lett. 85, 1601–1603 (2004).
[CrossRef]

Lubguban, J. A.

Y. R. Ryu, J. A. Lubguban, T. S. Lee, H. W. White, T. S. Jeong, C. J. Youn, and B. J. Kim, “Excitonic ultraviolet lasing in ZnO—based light emitting devices,” Appl. Phys. Lett. 90, 131115 (2007).
[CrossRef]

Lynch, R. T.

J. J. Hopfield, D. G. Thomas, and R. T. Lynch, “Isoelectronic donors and acceptors,” Phys. Rev. Lett. 17, 312–315 (1966).
[CrossRef]

Lytvyn, O.

I. Shtepliuk, G. Lashkarev, V. Khomyak, O. Lytvyn, P. Marianchuk, I. Timofeeva, A. Ievtushenko, and V. Lazorenko, “Features of the influence of the deposition power and Ar/O 2 gas ratio on the microstructure and optical properties of the Zn0.9Cd0.1O films,” Thin Solid Films 520, 4772–4777 (2012).
[CrossRef]

Lytvyn, P. M.

V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, “Zinc oxide—analog of GaN with new perspective possibilities,” Cryst. Res. Technol. 39, 980–992 (2004).
[CrossRef]

Makhniy, V. P.

V. P. Makhniy, M. M. Slyotov, E. V. Stets, I. V. Tkachenko, V. V. Gorley, and P. P. Horley, “Application of modulation spectroscopy for determination of recombination center parameters,” Thin Solid Films 450, 222–225 (2004).
[CrossRef]

Makoto, O.

T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
[CrossRef]

Mao, S. S.

M. A. Mayer, D. T. Speaks, K. M. Yu, S. S. Mao, E. E. Haller, and W. Walukiewicz, “Band structure engineering of ZnO1–x Sex alloys,” Appl. Phys. Lett. 97, 022104 (2010).
[CrossRef]

Marianchuk, P.

I. Shtepliuk, G. Lashkarev, V. Khomyak, O. Lytvyn, P. Marianchuk, I. Timofeeva, A. Ievtushenko, and V. Lazorenko, “Features of the influence of the deposition power and Ar/O 2 gas ratio on the microstructure and optical properties of the Zn0.9Cd0.1O films,” Thin Solid Films 520, 4772–4777 (2012).
[CrossRef]

Marianchuk, P. D.

V. V. Khomyak, M. M. Slyotov, I. I. Shtepliuk, G. V. Lashkarev, O. M. Slyotov, P. D. Marianchuk, and V. V. Kosolovskiy, “Annealing effect on the near-band edge emission of ZnO,” J. Phys. Chem. Solids 74, 291–297 (2013).

Matsubara, K.

K. Iwata, P. Fons, A. Yamada, H. Shibata, K. Matsubara, K. Nakahara, H. Takasu, and S. Niki, “Bandgap engineering of ZnO using Se,” Phys. Status Solidi B 229, 887–890 (2002).

Mayer, M. A.

M. A. Mayer, D. T. Speaks, K. M. Yu, S. S. Mao, E. E. Haller, and W. Walukiewicz, “Band structure engineering of ZnO1–x Sex alloys,” Appl. Phys. Lett. 97, 022104 (2010).
[CrossRef]

Mazurenko, E. A.

V. A. Karpina, V. I. Lazorenko, C. V. Lashkarev, V. D. Dobrowolski, L. I. Kopylova, V. A. Baturin, S. A. Pustovoytov, A. J. Karpenko, S. A. Eremin, P. M. Lytvyn, V. P. Ovsyannikov, and E. A. Mazurenko, “Zinc oxide—analog of GaN with new perspective possibilities,” Cryst. Res. Technol. 39, 980–992 (2004).
[CrossRef]

Meng, G. W.

Y. Li, G. W. Meng, L. D. Zhang, and F. Phillipp, “Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties,” Appl. Phys. Lett. 76, 2011–2013 (2000).
[CrossRef]

Miyashita, S.

T. Sekiguchi, S. Miyashita, K. Obara, T. Shishido, and N. Sakagami, “Hydrothermal growth of ZnO single crystals and their optical characterization,” J. Cryst. Growth 214–215, 72–76 (2000).
[CrossRef]

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C. Y. Moon, S. H. Wei, Y. Z. Zhu, and G. D. Chen, “Band-gap bowing coefficients in large size-mismatched II-VI alloys: first-principles calculations,” Phys. Rev. B 74, 233202 (2006).
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Niki, S.

K. Iwata, P. Fons, A. Yamada, H. Shibata, K. Matsubara, K. Nakahara, H. Takasu, and S. Niki, “Bandgap engineering of ZnO using Se,” Phys. Status Solidi B 229, 887–890 (2002).

Obara, K.

T. Sekiguchi, S. Miyashita, K. Obara, T. Shishido, and N. Sakagami, “Hydrothermal growth of ZnO single crystals and their optical characterization,” J. Cryst. Growth 214–215, 72–76 (2000).
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T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
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X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78, 2285–2287 (2001).
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U. Ozgur, J. I. Alilov, C. Lin, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoe, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98, 041301 (2005).
[CrossRef]

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A. González, M. Herrera-Zaldívar, J. Valenzuela, A. Escobedo-Morales, and U. Pa, “CL study of yellow emission in ZnO nanostructures annealed in Ar and O2 atmospheres,” Superlattices Microstruct. 45, 421–428 (2009).
[CrossRef]

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G. Muñoz-Hernández, A. Escobedo-Morales, and U. Pal, “Thermolytic growth of ZnO nanocrystals: morphology control and optical properties,” Cryst. Growth Des. 9, 297–300 (2009).
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H. L. Pan, B. Yao, M. Ding, R. Deng, T. Yang, Y. R. Sui, T. T. Zhao, and L. L. Gao, “Characterization and properties of Zn–O–Se ternary system thin films deposited by radio-frequency (rf)-magnetron sputtering,” J. Non-Cryst. Solids 356, 906–910 (2010).
[CrossRef]

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X. Xu, C. Xu, J. Dai, J. Pan, and J. Hu, “Evolutions of defects and blue–green emissions in ZnO microwhiskers fabricated by vapor-phase transport,” J. Phys. Chem. Solids 73, 858–862 (2012).
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U. Ozgur, J. I. Alilov, C. Lin, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoe, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98, 041301 (2005).
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Y. R. Ryu, J. A. Lubguban, T. S. Lee, H. W. White, T. S. Jeong, C. J. Youn, and B. J. Kim, “Excitonic ultraviolet lasing in ZnO—based light emitting devices,” Appl. Phys. Lett. 90, 131115 (2007).
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T. Sekiguchi, S. Miyashita, K. Obara, T. Shishido, and N. Sakagami, “Hydrothermal growth of ZnO single crystals and their optical characterization,” J. Cryst. Growth 214–215, 72–76 (2000).
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K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68, 403–407 (1996).
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[CrossRef]

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T. Sekiguchi, S. Miyashita, K. Obara, T. Shishido, and N. Sakagami, “Hydrothermal growth of ZnO single crystals and their optical characterization,” J. Cryst. Growth 214–215, 72–76 (2000).
[CrossRef]

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Y. W. Zhang, X. M. Li, W. D. Yu, X. D. GaO, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO—based heterojunction light-emitting diode on Si (111) substrate by pulsed laser deposition,” J. Phys. D 41, 205105 (2008).
[CrossRef]

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D. Li, Y. H. Leung, A. B. Djurišić, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan, “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods,” Appl. Phys. Lett. 85, 1601–1603 (2004).
[CrossRef]

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K. Iwata, P. Fons, A. Yamada, H. Shibata, K. Matsubara, K. Nakahara, H. Takasu, and S. Niki, “Bandgap engineering of ZnO using Se,” Phys. Status Solidi B 229, 887–890 (2002).

Shishido, T.

T. Sekiguchi, S. Miyashita, K. Obara, T. Shishido, and N. Sakagami, “Hydrothermal growth of ZnO single crystals and their optical characterization,” J. Cryst. Growth 214–215, 72–76 (2000).
[CrossRef]

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I. Shtepliuk, G. Lashkarev, V. Khomyak, O. Lytvyn, P. Marianchuk, I. Timofeeva, A. Ievtushenko, and V. Lazorenko, “Features of the influence of the deposition power and Ar/O 2 gas ratio on the microstructure and optical properties of the Zn0.9Cd0.1O films,” Thin Solid Films 520, 4772–4777 (2012).
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V. Khomyak, M. Slyotov, I. Shtepliuk, O. Slyotov, and V. Kosolovskiy, “Effect of Se isoelectronic impurity on the luminescence features of the ZnO,” Acta Phys. Pol. A 122, 1039–1041 (2012).

I. Shtepliuk, G. Lashkarev, O. Khyzhun, B. Kowalski, A. Reszka, V. Khomyak, V. Lazorenko, and I. Timofeeva, “Enhancement of the ultraviolet luminescence intensity from Cd-doped ZnO films caused by exciton binding,” Acta Phys. Pol. A 120, 914–917 (2011).

Shtepliuk, I. I.

V. V. Khomyak, M. M. Slyotov, I. I. Shtepliuk, G. V. Lashkarev, O. M. Slyotov, P. D. Marianchuk, and V. V. Kosolovskiy, “Annealing effect on the near-band edge emission of ZnO,” J. Phys. Chem. Solids 74, 291–297 (2013).

Siu, G. G.

X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78, 2285–2287 (2001).
[CrossRef]

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V. Khomyak, M. Slyotov, I. Shtepliuk, O. Slyotov, and V. Kosolovskiy, “Effect of Se isoelectronic impurity on the luminescence features of the ZnO,” Acta Phys. Pol. A 122, 1039–1041 (2012).

Slyotov, M. M.

V. V. Khomyak, M. M. Slyotov, I. I. Shtepliuk, G. V. Lashkarev, O. M. Slyotov, P. D. Marianchuk, and V. V. Kosolovskiy, “Annealing effect on the near-band edge emission of ZnO,” J. Phys. Chem. Solids 74, 291–297 (2013).

V. P. Makhniy, M. M. Slyotov, E. V. Stets, I. V. Tkachenko, V. V. Gorley, and P. P. Horley, “Application of modulation spectroscopy for determination of recombination center parameters,” Thin Solid Films 450, 222–225 (2004).
[CrossRef]

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V. Khomyak, M. Slyotov, I. Shtepliuk, O. Slyotov, and V. Kosolovskiy, “Effect of Se isoelectronic impurity on the luminescence features of the ZnO,” Acta Phys. Pol. A 122, 1039–1041 (2012).

Slyotov, O. M.

V. V. Khomyak, M. M. Slyotov, I. I. Shtepliuk, G. V. Lashkarev, O. M. Slyotov, P. D. Marianchuk, and V. V. Kosolovskiy, “Annealing effect on the near-band edge emission of ZnO,” J. Phys. Chem. Solids 74, 291–297 (2013).

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M. A. Mayer, D. T. Speaks, K. M. Yu, S. S. Mao, E. E. Haller, and W. Walukiewicz, “Band structure engineering of ZnO1–x Sex alloys,” Appl. Phys. Lett. 97, 022104 (2010).
[CrossRef]

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V. P. Makhniy, M. M. Slyotov, E. V. Stets, I. V. Tkachenko, V. V. Gorley, and P. P. Horley, “Application of modulation spectroscopy for determination of recombination center parameters,” Thin Solid Films 450, 222–225 (2004).
[CrossRef]

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H. L. Pan, B. Yao, M. Ding, R. Deng, T. Yang, Y. R. Sui, T. T. Zhao, and L. L. Gao, “Characterization and properties of Zn–O–Se ternary system thin films deposited by radio-frequency (rf)-magnetron sputtering,” J. Non-Cryst. Solids 356, 906–910 (2010).
[CrossRef]

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T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
[CrossRef]

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Y. W. Zhang, X. M. Li, W. D. Yu, X. D. GaO, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO—based heterojunction light-emitting diode on Si (111) substrate by pulsed laser deposition,” J. Phys. D 41, 205105 (2008).
[CrossRef]

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K. Iwata, P. Fons, A. Yamada, H. Shibata, K. Matsubara, K. Nakahara, H. Takasu, and S. Niki, “Bandgap engineering of ZnO using Se,” Phys. Status Solidi B 229, 887–890 (2002).

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T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
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T. Atsushi, O. Akira, O. Takeyoshi, O. Makoto, M. Takayuki, M. Sumiha, K. Chtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Kainuma, and M. Kawasaki, “Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO,” Nat. Mater. 4, 42–46 (2005).
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K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68, 403–407 (1996).
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Y. W. Zhang, X. M. Li, W. D. Yu, X. D. GaO, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO—based heterojunction light-emitting diode on Si (111) substrate by pulsed laser deposition,” J. Phys. D 41, 205105 (2008).
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U. Ozgur, J. I. Alilov, C. Lin, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoe, “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98, 041301 (2005).
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Timofeeva, I.

I. Shtepliuk, G. Lashkarev, V. Khomyak, O. Lytvyn, P. Marianchuk, I. Timofeeva, A. Ievtushenko, and V. Lazorenko, “Features of the influence of the deposition power and Ar/O 2 gas ratio on the microstructure and optical properties of the Zn0.9Cd0.1O films,” Thin Solid Films 520, 4772–4777 (2012).
[CrossRef]

I. Shtepliuk, G. Lashkarev, O. Khyzhun, B. Kowalski, A. Reszka, V. Khomyak, V. Lazorenko, and I. Timofeeva, “Enhancement of the ultraviolet luminescence intensity from Cd-doped ZnO films caused by exciton binding,” Acta Phys. Pol. A 120, 914–917 (2011).

Tkachenko, I. V.

V. P. Makhniy, M. M. Slyotov, E. V. Stets, I. V. Tkachenko, V. V. Gorley, and P. P. Horley, “Application of modulation spectroscopy for determination of recombination center parameters,” Thin Solid Films 450, 222–225 (2004).
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A. González, M. Herrera-Zaldívar, J. Valenzuela, A. Escobedo-Morales, and U. Pa, “CL study of yellow emission in ZnO nanostructures annealed in Ar and O2 atmospheres,” Superlattices Microstruct. 45, 421–428 (2009).
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K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68, 403–407 (1996).
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K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors,” Appl. Phys. Lett. 68, 403–407 (1996).
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M. A. Mayer, D. T. Speaks, K. M. Yu, S. S. Mao, E. E. Haller, and W. Walukiewicz, “Band structure engineering of ZnO1–x Sex alloys,” Appl. Phys. Lett. 97, 022104 (2010).
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[CrossRef]

Wei, S. H.

C. Y. Moon, S. H. Wei, Y. Z. Zhu, and G. D. Chen, “Band-gap bowing coefficients in large size-mismatched II-VI alloys: first-principles calculations,” Phys. Rev. B 74, 233202 (2006).
[CrossRef]

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Y. R. Ryu, J. A. Lubguban, T. S. Lee, H. W. White, T. S. Jeong, C. J. Youn, and B. J. Kim, “Excitonic ultraviolet lasing in ZnO—based light emitting devices,” Appl. Phys. Lett. 90, 131115 (2007).
[CrossRef]

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X. L. Wu, G. G. Siu, C. L. Fu, and H. C. Ong, “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films,” Appl. Phys. Lett. 78, 2285–2287 (2001).
[CrossRef]

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D. Li, Y. H. Leung, A. B. Djurišić, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan, “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods,” Appl. Phys. Lett. 85, 1601–1603 (2004).
[CrossRef]

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X. Xu, C. Xu, J. Dai, J. Pan, and J. Hu, “Evolutions of defects and blue–green emissions in ZnO microwhiskers fabricated by vapor-phase transport,” J. Phys. Chem. Solids 73, 858–862 (2012).
[CrossRef]

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D. Li, Y. H. Leung, A. B. Djurišić, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan, “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods,” Appl. Phys. Lett. 85, 1601–1603 (2004).
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X. Xu, C. Xu, J. Dai, J. Pan, and J. Hu, “Evolutions of defects and blue–green emissions in ZnO microwhiskers fabricated by vapor-phase transport,” J. Phys. Chem. Solids 73, 858–862 (2012).
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T. Paskova and R. Yakimova, “Effect of Sb doping on point defect ensemble in MOVPE—GaAs,” Solid State Commun. 87, 1125–1127 (1993).
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K. Iwata, P. Fons, A. Yamada, H. Shibata, K. Matsubara, K. Nakahara, H. Takasu, and S. Niki, “Bandgap engineering of ZnO using Se,” Phys. Status Solidi B 229, 887–890 (2002).

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Y. W. Zhang, X. M. Li, W. D. Yu, X. D. GaO, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO—based heterojunction light-emitting diode on Si (111) substrate by pulsed laser deposition,” J. Phys. D 41, 205105 (2008).
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H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater. 20, 561–572 (2010).
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H. Zeng, S. Yang, X. Xu, and W. Cai, “Dramatic excitation dependence of strong and stable blue luminescence of ZnO hollow nanoparticles,” Appl. Phys. Lett. 95, 191904 (2009).
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H. L. Pan, B. Yao, M. Ding, R. Deng, T. Yang, Y. R. Sui, T. T. Zhao, and L. L. Gao, “Characterization and properties of Zn–O–Se ternary system thin films deposited by radio-frequency (rf)-magnetron sputtering,” J. Non-Cryst. Solids 356, 906–910 (2010).
[CrossRef]

Yang, X.

J. Wang, G. Du, Y. Zhang, B. Zhao, X. Yang, and D. Liu, “Luminescence properties of ZnO films annealed in growth ambient and oxygen,” J. Cryst. Growth 263, 269–272 (2004).
[CrossRef]

Yao, B.

H. L. Pan, B. Yao, M. Ding, R. Deng, T. Yang, Y. R. Sui, T. T. Zhao, and L. L. Gao, “Characterization and properties of Zn–O–Se ternary system thin films deposited by radio-frequency (rf)-magnetron sputtering,” J. Non-Cryst. Solids 356, 906–910 (2010).
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B. Lin, Z. Fu, and Y. Yia, “Green luminescent center in undoped zinc oxide films deposited on silicon substrates,” Appl. Phys. Lett. 79, 943–945 (2001).
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Y. R. Ryu, J. A. Lubguban, T. S. Lee, H. W. White, T. S. Jeong, C. J. Youn, and B. J. Kim, “Excitonic ultraviolet lasing in ZnO—based light emitting devices,” Appl. Phys. Lett. 90, 131115 (2007).
[CrossRef]

Yu, K. M.

M. A. Mayer, D. T. Speaks, K. M. Yu, S. S. Mao, E. E. Haller, and W. Walukiewicz, “Band structure engineering of ZnO1–x Sex alloys,” Appl. Phys. Lett. 97, 022104 (2010).
[CrossRef]

Yu, W. D.

Y. W. Zhang, X. M. Li, W. D. Yu, X. D. GaO, Y. F. Gu, C. Yang, J. L. Zhao, X. W. Sun, S. T. Tan, J. F. Kong, and W. Z. Shen, “Epitaxial growth and luminescence properties of ZnO—based heterojunction light-emitting diode on Si (111) substrate by pulsed laser deposition,” J. Phys. D 41, 205105 (2008).
[CrossRef]

Zeng, H.

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater. 20, 561–572 (2010).
[CrossRef]

H. Zeng, S. Yang, X. Xu, and W. Cai, “Dramatic excitation dependence of strong and stable blue luminescence of ZnO hollow nanoparticles,” Appl. Phys. Lett. 95, 191904 (2009).
[CrossRef]

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Figures (5)

Fig. 1.
Fig. 1.

Dependence of optical transmission coefficient on the wavelength in ZnO1xSex thin films at various Se content x: 1, 0; 2, 0.008; 3, 0.012; 4, 0.028; 5, 0.037; 6, 0.052; 7, 0.069; 8, 0.11.

Fig. 2.
Fig. 2.

Dependence of band gap in ZnO1xSex films from Se content.

Fig. 3.
Fig. 3.

Differential spectra of the optical transmission (curves 1, 2, 3) and reflectance (curves 4, 5, 6) for ZnO1xSex with x: 0 (curves 1, 4); 0.008 (curves 2, 5) and 0.052 (curves 3, 6) at the room temperature.

Fig. 4.
Fig. 4.

PL spectra of ZnO1xSex films at room temperature at various Se content x: 1, 0; 2, 0.008; 3, 0.069; 4, 0.11.

Fig. 5.
Fig. 5.

Normal Nω (curve 1) and λ-modulated Nω (curve 2) PL spectra at room temperature as well as a theoretically calculated spectrum of the interband radiation recombination of the free charge carriers (curve 3) for the ZnO1xSex, thin films at x=0.008. The inset demonstrates the dependences of maximum position ωm and emission intensity I on the level of the photoexcitation L.

Equations (4)

Equations on this page are rendered with MathJax. Learn more.

α=2.303·log(1/T)/d,
α(ω)=α0(ωEg)1/2,
I(T)=I(0)/[1+C0exp(ET/(kT))],
Nω(ω)2ωEgexp[(ωEg)/(kT)],

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