Abstract

A mathematical model to describe the far-field of a high-power laser diode (LD) beam is presented. The laser beam propagation is studied by the vector Rayleigh–Sommerfeld far-field diffraction integral formula The far-field distribution of the LD beam is studied in detail; the light polarized parallel and perpendicular to the junction plane are all considered. This model is employed to predict the light intensity of high-power LDs. The computed intensity distributions are in a good agreement with the corresponding measurements. This model can be easily used to analyze the propagation properties of the high-power LD beam.

© 2013 Optical Society of America

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[CrossRef]

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X. Zeng, “Far-field solution of the Helmholtz equation for double heterostructure diode lasers,” Appl. Phys. A 57, 243–247 (1993).
[CrossRef]

An, Y.

Boiko, D. L.

Burns, D.

Byrne, D.

R. Phelan, J. O’Carroll, and D. Byrne, “In0.75Ga0.25As/InP multiple quantum-well discrete-mode laser diode emitting at 2 μm,” IEEE Photon. Technol. Lett. 24, 652–654 (2012).
[CrossRef]

Chen, S.

Cheng, W.

Chu, S.

Creedon, K. J.

Dong, H.

Feng, Z.

George, J.

Huska, K.

Kansky, J. E.

Kemp, A.

Klinkhammer, S.

Kozlowska, A.

A. Kozlowska and A. Malag, “Far-field emission characteristics of high-power laser diodes,” Proc. SPIE 5120, 178–183 (2003).
[CrossRef]

Lang, L.

J. J. Lim, S. Sujecki, and L. Lang, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Lim, J. J.

J. J. Lim, S. Sujecki, and L. Lang, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

Lin, S.

Liu, X.

Liu, Y.

Lu, Y.

Maclean, A. J.

Malag, A.

A. Kozlowska and A. Malag, “Far-field emission characteristics of high-power laser diodes,” Proc. SPIE 5120, 178–183 (2003).
[CrossRef]

Nemoto, S.

O’Carroll, J.

R. Phelan, J. O’Carroll, and D. Byrne, “In0.75Ga0.25As/InP multiple quantum-well discrete-mode laser diode emitting at 2 μm,” IEEE Photon. Technol. Lett. 24, 652–654 (2012).
[CrossRef]

Oak, S. M.

Otsuka, K.

Phelan, R.

R. Phelan, J. O’Carroll, and D. Byrne, “In0.75Ga0.25As/InP multiple quantum-well discrete-mode laser diode emitting at 2 μm,” IEEE Photon. Technol. Lett. 24, 652–654 (2012).
[CrossRef]

Redmond, S. M.

Roth, P. W.

Seihgal, R.

Shi, S.

Sujecki, S.

J. J. Lim, S. Sujecki, and L. Lang, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

S. Sujecki, “Stability of steady-state high-power semiconductor laser models,” J. Opt. Soc. Am. B 24, 1053–1060(2007).
[CrossRef]

Vasil’ev, P. P.

Wang, B.

Xie, S.

Yeh, P.

Yeh, S.

Zeng, X.

X. Zeng, Z. Feng, and Y. An, “Far-field expression of a high-power laser diode,” Appl. Opt. 43, 5168–5172 (2004).
[CrossRef]

X. Zeng, “Far-field solution of the Helmholtz equation for double heterostructure diode lasers,” Appl. Phys. A 57, 243–247 (1993).
[CrossRef]

Appl. Opt.

Appl. Phys. A

X. Zeng, “Far-field solution of the Helmholtz equation for double heterostructure diode lasers,” Appl. Phys. A 57, 243–247 (1993).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

J. J. Lim, S. Sujecki, and L. Lang, “Design and simulation of next-generation high-power, high-brightness laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15, 993–1008 (2009).
[CrossRef]

IEEE Photon. Technol. Lett.

R. Phelan, J. O’Carroll, and D. Byrne, “In0.75Ga0.25As/InP multiple quantum-well discrete-mode laser diode emitting at 2 μm,” IEEE Photon. Technol. Lett. 24, 652–654 (2012).
[CrossRef]

J. Opt. Soc. Am. B

Opt. Express

Opt. Lett.

Proc. SPIE

A. Kozlowska and A. Malag, “Far-field emission characteristics of high-power laser diodes,” Proc. SPIE 5120, 178–183 (2003).
[CrossRef]

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