Abstract

A Zr0.04Ti0.96O2 solid solution nanowire (NW) array was prepared and characterized in detail. Zr doping effectively changed ZrxTi1xO2’s bandgap and led to better photoelectric properties, which indicated the possibility for deep UV detector fabrication. Based on the NW array, high-performance Schottky diode UV detector with Ag electrode was fabricated. At 3V bias, the dark current of the detector is only 5 nA, and a high photoresponse of 5.6A/W was achieved because of the internal gain. The ratio of photocurrent to dark current is more than three orders of magnitude. The device is promising for large-area UV detector applications.

© 2013 Optical Society of America

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