Abstract

Data reported in Table 1 of our earlier paper [Appl. Opt. 50, 2640 (2011) [CrossRef]  ] are corrected.

© 2013 Optical Society of America

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References

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  1. G. Lim, T. Manzur, and A. Kar, “Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector,” Appl. Opt. 50, 2640–2653 (2011).
    [CrossRef]

2011 (1)

G. Lim, T. Manzur, and A. Kar, “Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector,” Appl. Opt. 50, 2640–2653 (2011).
[CrossRef]

Kar, A.

G. Lim, T. Manzur, and A. Kar, “Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector,” Appl. Opt. 50, 2640–2653 (2011).
[CrossRef]

Lim, G.

G. Lim, T. Manzur, and A. Kar, “Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector,” Appl. Opt. 50, 2640–2653 (2011).
[CrossRef]

Manzur, T.

G. Lim, T. Manzur, and A. Kar, “Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector,” Appl. Opt. 50, 2640–2653 (2011).
[CrossRef]

Appl. Opt. (1)

G. Lim, T. Manzur, and A. Kar, “Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector,” Appl. Opt. 50, 2640–2653 (2011).
[CrossRef]

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Tables (1)

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Table 1. Optical Properties of the As-Received and Doped 4H-SiC Substrates

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