Abstract

In this paper, a tunable low power slow light photonic crystal device with a silicon-on-insulator platform is proposed based on the combination of an asymmetric defects coupled-cavity waveguide and the electromagnetically induced transparency (EIT) phenomenon. Modulating the refractive index of special regions in the suggested structure by the EIT phenomenon leads to a relatively wideband slow light device with adjustable group index in the same structure. Using this feature, a small and compact delay line is introduced that has many applications in optical telecommunications, especially in buffers. The numerical calculations show that the group index of 80–98 over the slow light bandwidth from 3.2 to 2.6 nm is achievable for the central wavelength of 1546–1555 nm, respectively. The device malfunction, due to fabrication errors, is modeled, and the tunable characteristics of the proposed structure are verified.

© 2013 Optical Society of America

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