Abstract

We have developed a silicon depletion-mode modulator featuring a novel U-type PN junction that enables a substantial improvement in electro-optical modulation efficiency. Through electrical, optical, and manufacturing process simulations, an ultralow $V_{\pi }L$ of $0.63\mathrm{V}·\mathrm{cm}$ is exhibited with 3 V reverse bias. The high modulation efficiency enables a high extinction ratio (ER) of $>17\mathrm{dB}$ with only a 1 mm phase shifter when the excess loss at the “on” state is 2 dB. The ER can maintain $>12\mathrm{dB}$ at $\sim 28\mathrm{GHz}$ operation with a 3 V peak-to-peak voltage due to the small voltage attenuation of the short phase shifter.

© 2013 Optical Society of America

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