Abstract

We report on the passive Q-switching laser performance of the Yb:Gd3Ga5O12 garnet crystal. With a Cr4+:YAG crystal used as saturable absorber for passive Q-switching, an average output power of 5.31 W was produced at a pulse repetition rate of 62.5 kHz, the optical-to-optical and slope efficiencies being, respectively, 45% and 61%. Laser pulses of 140 μJ in energy and 5.8 ns in duration were also obtained at 22.2 kHz, with a corresponding peak power amounting to 24.1 kW.

© 2013 Optical Society of America

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  1. W. Koechner, Solid-Sate Laser Engineering (Springer, 2006), Chap. 2.
  2. A. Brenier, Y. Guyot, H. Canibano, G. Boulon, A. Ródenas, D. Jaque, A. Eganyan, and A. G. Petrosyan, “Growth, spectroscopic, and laser properties of Yb3+-doped Lu3Al5O12 garnet crystal,” J. Opt. Soc. Am. B 23, 676–683 (2006).
    [CrossRef]
  3. S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22, 99–106 (2003).
    [CrossRef]
  4. B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277, 186–191 (2005).
    [CrossRef]
  5. H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46, 1689–1695 (2010).
    [CrossRef]
  6. K. Wu, L. Hao, H. Zhang, H. Yu, Y. Wang, J. Wang, X. Tian, Z. Zhou, J. Liu, and R. I. Boughton, “Lu3Ga5O12: exploration of new laser host material for the ytterbium ion,” J. Opt. Soc. Am. B 29, 2320–2328 (2012).
    [CrossRef]
  7. K. Beil, S. T. Fredrich-Thornton, F. Tellkamp, R. Peters, C. Kränkel, K. Petermann, and G. Huber, “Thermal and laser properties of Yb:LuAG for kW thin disk lasers,” Opt. Express 18, 20712–20722 (2010).
    [CrossRef]
  8. J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7, 726–733 (2010).
    [CrossRef]
  9. J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett. 32, 3266–3268 (2007).
    [CrossRef]
  10. J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63 ps duration,” Opt. Express 17, 11537–11542 (2009).
    [CrossRef]
  11. X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express 13, 7708–7719 (2005).
    [CrossRef]
  12. J. Liu, X. Tian, Z. Zhou, K. Wu, W. Han, and H. Zhang, “Efficient laser operation of Yb:Lu3Ga5O12 garnet crystal,” Opt. Lett. 37, 2388–2390 (2012).
    [CrossRef]
  13. Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
    [CrossRef]
  14. J. P. Shen and C. F. Ding, “Narrow pulse width and high power passively Q-switched Nd:Gd3Ga5O12 laser with Cr4+:YAG saturable absorber,” Laser Phys. 22, 1659–1663 (2012).
    [CrossRef]

2012 (3)

2010 (3)

K. Beil, S. T. Fredrich-Thornton, F. Tellkamp, R. Peters, C. Kränkel, K. Petermann, and G. Huber, “Thermal and laser properties of Yb:LuAG for kW thin disk lasers,” Opt. Express 18, 20712–20722 (2010).
[CrossRef]

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7, 726–733 (2010).
[CrossRef]

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46, 1689–1695 (2010).
[CrossRef]

2009 (1)

2007 (1)

2006 (1)

2005 (2)

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277, 186–191 (2005).
[CrossRef]

X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express 13, 7708–7719 (2005).
[CrossRef]

2003 (1)

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22, 99–106 (2003).
[CrossRef]

2002 (1)

Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
[CrossRef]

Balembois, F.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22, 99–106 (2003).
[CrossRef]

Beil, K.

Boughton, R. I.

Boulon, G.

Brenier, A.

Canibano, H.

Chang, J.

Chen, W.

Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
[CrossRef]

Chénais, S.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22, 99–106 (2003).
[CrossRef]

Deng, P.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277, 186–191 (2005).
[CrossRef]

Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
[CrossRef]

Ding, C. F.

J. P. Shen and C. F. Ding, “Narrow pulse width and high power passively Q-switched Nd:Gd3Ga5O12 laser with Cr4+:YAG saturable absorber,” Laser Phys. 22, 1659–1663 (2012).
[CrossRef]

Ding, S.

Dong, J.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7, 726–733 (2010).
[CrossRef]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett. 32, 3266–3268 (2007).
[CrossRef]

Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
[CrossRef]

Druon, F.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22, 99–106 (2003).
[CrossRef]

Eganyan, A.

Fredrich-Thornton, S. T.

Georges, P.

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22, 99–106 (2003).
[CrossRef]

Guyot, Y.

Han, W.

Hao, L.

He, J.

Huber, G.

Jaque, D.

Jiang, B.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277, 186–191 (2005).
[CrossRef]

Jiang, M.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46, 1689–1695 (2010).
[CrossRef]

Kalisky, Y.

Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
[CrossRef]

Kaminskii, A. A.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7, 726–733 (2010).
[CrossRef]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett. 32, 3266–3268 (2007).
[CrossRef]

Koechner, W.

W. Koechner, Solid-Sate Laser Engineering (Springer, 2006), Chap. 2.

Kränkel, C.

Kravchik, L.

Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
[CrossRef]

Labbe, C.

Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
[CrossRef]

Li, J.

Li, P.

Li, S.

Liang, X.

Liu, J.

Petermann, K.

Peters, R.

Petrosyan, A. G.

Rachum, U.

Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
[CrossRef]

Ródenas, A.

Shen, J. P.

J. P. Shen and C. F. Ding, “Narrow pulse width and high power passively Q-switched Nd:Gd3Ga5O12 laser with Cr4+:YAG saturable absorber,” Laser Phys. 22, 1659–1663 (2012).
[CrossRef]

Song, P.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277, 186–191 (2005).
[CrossRef]

Tellkamp, F.

Tian, X.

Ueda, K.

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7, 726–733 (2010).
[CrossRef]

J. Dong, K. Ueda, and A. A. Kaminskii, “Efficient passively Q-switched Yb:LuAG microchip laser,” Opt. Lett. 32, 3266–3268 (2007).
[CrossRef]

Waichman, K.

Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
[CrossRef]

Wang, J.

K. Wu, L. Hao, H. Zhang, H. Yu, Y. Wang, J. Wang, X. Tian, Z. Zhou, J. Liu, and R. I. Boughton, “Lu3Ga5O12: exploration of new laser host material for the ytterbium ion,” J. Opt. Soc. Am. B 29, 2320–2328 (2012).
[CrossRef]

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46, 1689–1695 (2010).
[CrossRef]

Wang, Q.

Wang, X.

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277, 186–191 (2005).
[CrossRef]

Wang, Y.

Wang, Z.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46, 1689–1695 (2010).
[CrossRef]

X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express 13, 7708–7719 (2005).
[CrossRef]

Wei, Z.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46, 1689–1695 (2010).
[CrossRef]

Wu, K.

Xu, J.

J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63 ps duration,” Opt. Express 17, 11537–11542 (2009).
[CrossRef]

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277, 186–191 (2005).
[CrossRef]

Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
[CrossRef]

Xu, X.

J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63 ps duration,” Opt. Express 17, 11537–11542 (2009).
[CrossRef]

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277, 186–191 (2005).
[CrossRef]

Xu, Z.

Yao, B.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46, 1689–1695 (2010).
[CrossRef]

Yu, H.

Zhang, H.

Zhang, S.

Zhang, X.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46, 1689–1695 (2010).
[CrossRef]

X. Zhang, A. Brenier, Q. Wang, Z. Wang, J. Chang, P. Li, S. Zhang, S. Ding, and S. Li, “Passive Q-switching characteristics of Yb3+:Gd3Ga5O12 crystal,” Opt. Express 13, 7708–7719 (2005).
[CrossRef]

Zhang, Y.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46, 1689–1695 (2010).
[CrossRef]

Zhang, Z.

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46, 1689–1695 (2010).
[CrossRef]

Zhao, Z.

J. He, X. Liang, J. Li, H. Yu, X. Xu, Z. Zhao, J. Xu, and Z. Xu, “LD pumped Yb:LuAG mode-locked laser with 7.63 ps duration,” Opt. Express 17, 11537–11542 (2009).
[CrossRef]

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277, 186–191 (2005).
[CrossRef]

Zhou, Z.

IEEE J. Quantum Electron. (1)

H. Yu, K. Wu, B. Yao, H. Zhang, Z. Wang, J. Wang, Y. Zhang, Z. Wei, Z. Zhang, X. Zhang, and M. Jiang, “Growth and characteristics of Yb-doped Y3Ga5O12 laser crystal,” IEEE J. Quantum Electron. 46, 1689–1695 (2010).
[CrossRef]

J. Cryst. Growth (1)

B. Jiang, Z. Zhao, X. Xu, P. Song, X. Wang, J. Xu, and P. Deng, “Spectral properties and charge transfer luminescence of Yb3+:Gd3Ga5O12 (Yb:GGG) crystal,” J. Cryst. Growth 277, 186–191 (2005).
[CrossRef]

J. Opt. Soc. Am. B (2)

Laser Phys. (1)

J. P. Shen and C. F. Ding, “Narrow pulse width and high power passively Q-switched Nd:Gd3Ga5O12 laser with Cr4+:YAG saturable absorber,” Laser Phys. 22, 1659–1663 (2012).
[CrossRef]

Laser Phys. Lett. (1)

J. Dong, K. Ueda, and A. A. Kaminskii, “Laser-diode pumped efficient Yb:LuAG microchip lasers oscillating at 1030 and 1047 nm,” Laser Phys. Lett. 7, 726–733 (2010).
[CrossRef]

Opt. Express (3)

Opt. Lett. (2)

Opt. Mater. (2)

S. Chénais, F. Druon, F. Balembois, P. Georges, A. Brenier, and G. Boulon, “Diode-pumped Yb:GGG laser: comparison with Yb:YAG,” Opt. Mater. 22, 99–106 (2003).
[CrossRef]

Y. Kalisky, C. Labbe, K. Waichman, L. Kravchik, U. Rachum, P. Deng, J. Xu, J. Dong, and W. Chen, “Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets,” Opt. Mater. 19, 403–413 (2002).
[CrossRef]

Other (1)

W. Koechner, Solid-Sate Laser Engineering (Springer, 2006), Chap. 2.

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Figures (5)

Fig. 1.
Fig. 1.

Output power versus Pabs measured in cw and Q-switched operation of the Yb:GGG laser.

Fig. 2.
Fig. 2.

Emission spectra measured at Pabs=6.62W for cw and Q-switched operation of the Yb:GGG laser with an output coupler of T=30%.

Fig. 3.
Fig. 3.

Variation of PRF with Pabs measured in the two cases of T0=94.4% and T0=85.0%.

Fig. 4.
Fig. 4.

Variation of pulse energy with Pabs measured in the two cases of T0=94.4% and T0=85.0%.

Fig. 5.
Fig. 5.

Typical pulse profiles measured for the two cases of T0=94.4% and T0=85.0%.

Tables (1)

Tables Icon

Table 1. Parameters Characterizing the Passive Q-Switching Laser Performance of Yb- or Nd-Doped Garnets

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