Abstract

High-responsivity metal–semiconductor–metal TiO2 UV photodetectors with Ni and Au electrodes were fabricated identically. Their Schottky barrier heights and photocurrent gain mechanism were studied. The effective barrier height Φ and ideality factor n were evaluated according to the thermionic emission theory. The result that ΦNi was lower than ΦAu may be attributed to the electron transfer from Ni to the TiO2 substrate, which would lead to a dipole layer and, accordingly, decrease the barrier height. In addition, the I–V characteristics of the Ni/TiO2/Ni and Au/TiO2/Au photodetectors were observed. A significant internal gain was obtained, and the mechanism of the internal gain was studied by the phototransistor model in detail.

© 2012 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. T. Masu, S. Khunkhao, K. Kobayashi, S. Niemcharoen, S. Supadech, and K. Sato, “Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region,” Solid-State Electron. 47, 1385–1390(2003).
    [CrossRef]
  2. L. Liou and B. Nabet, “Simple analytical model of bias dependence of the photocurrent of metal–semiconductor–metal photodetectors,” Appl. Opt. 35, 15–23 (1996).
    [CrossRef]
  3. G. W. Anderson, L. E. Chipman, F. J. Kub, D. Park, M. Y. Frankel, T. F. Carruthers, J. A. Modolo, K. D. Hobart, and D. S. Katzer, “Gallium arsenide metal–semiconductor–metal photodiodes as optoelectronic mixers for microwave single-sideband modulation,” Appl. Opt. 37, 28–33 (1998).
    [CrossRef]
  4. G. Guler, O. Gullu, O. F. Bakkaloglu, and A. Turut, “Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition,” Physica B 403, 2211–2214 (2008).
    [CrossRef]
  5. X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
    [CrossRef]
  6. H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
    [CrossRef]
  7. A. Balducci, M. Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, and G. Verona-Rinati, “Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition,” Appl. Phys. Lett. 86, 193509 (2005).
    [CrossRef]
  8. E. H. Rhoderick and R. H. Williams, Metal–Semiconductor Contacts (Oxford University, 1988).
  9. W. Monch, Electronic Properties of Semiconductor Interfaces (Springer, 2004).
  10. J. Tang, M. White, G. D. Stucky, and E. W. McFarland, “Electrochemical fabrication of large-area Au/TiO2 junctions,” Electrochem. Commun. 5, 497–501 (2003).
    [CrossRef]
  11. H. Onishi, T. Aruga, C. Egawa, and Y. Iwasawa, “Photoelectron spectroscopic study of clean and co adsorbed Ni/TiO2 (110) interfaces,” Surf. Sci. 233, 261–268 (1990).
    [CrossRef]
  12. N. Lopez and J. K. Nørskov, “Theoretical study of the Au/TiO2 (110) interface,” Surf. Sci. 515, 175–186 (2002).
    [CrossRef]
  13. H. Zhang, C. Feng, C. Liu, T. Xie, J. Zhou, and S. Ruan, “ZrxTi1−xO2 based ultraviolet detectors series,” IEEE Electron Device Lett. 32, 934–936 (2011).
    [CrossRef]
  14. W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787–2789 (2001).
    [CrossRef]
  15. O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79, 1417–1419 (2001).
    [CrossRef]

2011 (1)

H. Zhang, C. Feng, C. Liu, T. Xie, J. Zhou, and S. Ruan, “ZrxTi1−xO2 based ultraviolet detectors series,” IEEE Electron Device Lett. 32, 934–936 (2011).
[CrossRef]

2009 (1)

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
[CrossRef]

2008 (1)

G. Guler, O. Gullu, O. F. Bakkaloglu, and A. Turut, “Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition,” Physica B 403, 2211–2214 (2008).
[CrossRef]

2007 (1)

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

2005 (1)

A. Balducci, M. Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, and G. Verona-Rinati, “Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition,” Appl. Phys. Lett. 86, 193509 (2005).
[CrossRef]

2003 (2)

J. Tang, M. White, G. D. Stucky, and E. W. McFarland, “Electrochemical fabrication of large-area Au/TiO2 junctions,” Electrochem. Commun. 5, 497–501 (2003).
[CrossRef]

T. Masu, S. Khunkhao, K. Kobayashi, S. Niemcharoen, S. Supadech, and K. Sato, “Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region,” Solid-State Electron. 47, 1385–1390(2003).
[CrossRef]

2002 (1)

N. Lopez and J. K. Nørskov, “Theoretical study of the Au/TiO2 (110) interface,” Surf. Sci. 515, 175–186 (2002).
[CrossRef]

2001 (2)

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787–2789 (2001).
[CrossRef]

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79, 1417–1419 (2001).
[CrossRef]

1998 (1)

1996 (1)

1990 (1)

H. Onishi, T. Aruga, C. Egawa, and Y. Iwasawa, “Photoelectron spectroscopic study of clean and co adsorbed Ni/TiO2 (110) interfaces,” Surf. Sci. 233, 261–268 (1990).
[CrossRef]

Anderson, G. W.

Aruga, T.

H. Onishi, T. Aruga, C. Egawa, and Y. Iwasawa, “Photoelectron spectroscopic study of clean and co adsorbed Ni/TiO2 (110) interfaces,” Surf. Sci. 233, 261–268 (1990).
[CrossRef]

Bahir, G.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79, 1417–1419 (2001).
[CrossRef]

Bakkaloglu, O. F.

G. Guler, O. Gullu, O. F. Bakkaloglu, and A. Turut, “Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition,” Physica B 403, 2211–2214 (2008).
[CrossRef]

Balducci, A.

A. Balducci, M. Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, and G. Verona-Rinati, “Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition,” Appl. Phys. Lett. 86, 193509 (2005).
[CrossRef]

Carruthers, T. F.

Chen, W.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Chipman, L. E.

Choopun, S.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787–2789 (2001).
[CrossRef]

Dong, W.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
[CrossRef]

Egawa, C.

H. Onishi, T. Aruga, C. Egawa, and Y. Iwasawa, “Photoelectron spectroscopic study of clean and co adsorbed Ni/TiO2 (110) interfaces,” Surf. Sci. 233, 261–268 (1990).
[CrossRef]

Fei, Y.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
[CrossRef]

Feng, C.

H. Zhang, C. Feng, C. Liu, T. Xie, J. Zhou, and S. Ruan, “ZrxTi1−xO2 based ultraviolet detectors series,” IEEE Electron Device Lett. 32, 934–936 (2011).
[CrossRef]

Frankel, M. Y.

Garber, V.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79, 1417–1419 (2001).
[CrossRef]

Guler, G.

G. Guler, O. Gullu, O. F. Bakkaloglu, and A. Turut, “Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition,” Physica B 403, 2211–2214 (2008).
[CrossRef]

Gullu, O.

G. Guler, O. Gullu, O. F. Bakkaloglu, and A. Turut, “Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition,” Physica B 403, 2211–2214 (2008).
[CrossRef]

Hobart, K. D.

Iwasawa, Y.

H. Onishi, T. Aruga, C. Egawa, and Y. Iwasawa, “Photoelectron spectroscopic study of clean and co adsorbed Ni/TiO2 (110) interfaces,” Surf. Sci. 233, 261–268 (1990).
[CrossRef]

Katz, O.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79, 1417–1419 (2001).
[CrossRef]

Katzer, D. S.

Khunkhao, S.

T. Masu, S. Khunkhao, K. Kobayashi, S. Niemcharoen, S. Supadech, and K. Sato, “Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region,” Solid-State Electron. 47, 1385–1390(2003).
[CrossRef]

Kobayashi, K.

T. Masu, S. Khunkhao, K. Kobayashi, S. Niemcharoen, S. Supadech, and K. Sato, “Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region,” Solid-State Electron. 47, 1385–1390(2003).
[CrossRef]

Kong, X.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
[CrossRef]

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Kub, F. J.

Liou, L.

Liu, C.

H. Zhang, C. Feng, C. Liu, T. Xie, J. Zhou, and S. Ruan, “ZrxTi1−xO2 based ultraviolet detectors series,” IEEE Electron Device Lett. 32, 934–936 (2011).
[CrossRef]

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
[CrossRef]

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Liu, Z.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Lopez, N.

N. Lopez and J. K. Nørskov, “Theoretical study of the Au/TiO2 (110) interface,” Surf. Sci. 515, 175–186 (2002).
[CrossRef]

Marinelli, M.

A. Balducci, M. Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, and G. Verona-Rinati, “Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition,” Appl. Phys. Lett. 86, 193509 (2005).
[CrossRef]

Masu, T.

T. Masu, S. Khunkhao, K. Kobayashi, S. Niemcharoen, S. Supadech, and K. Sato, “Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region,” Solid-State Electron. 47, 1385–1390(2003).
[CrossRef]

McFarland, E. W.

J. Tang, M. White, G. D. Stucky, and E. W. McFarland, “Electrochemical fabrication of large-area Au/TiO2 junctions,” Electrochem. Commun. 5, 497–501 (2003).
[CrossRef]

Meyler, B.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79, 1417–1419 (2001).
[CrossRef]

Milani, E.

A. Balducci, M. Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, and G. Verona-Rinati, “Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition,” Appl. Phys. Lett. 86, 193509 (2005).
[CrossRef]

Modolo, J. A.

Monch, W.

W. Monch, Electronic Properties of Semiconductor Interfaces (Springer, 2004).

Morgada, M. E.

A. Balducci, M. Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, and G. Verona-Rinati, “Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition,” Appl. Phys. Lett. 86, 193509 (2005).
[CrossRef]

Nabet, B.

Niemcharoen, S.

T. Masu, S. Khunkhao, K. Kobayashi, S. Niemcharoen, S. Supadech, and K. Sato, “Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region,” Solid-State Electron. 47, 1385–1390(2003).
[CrossRef]

Nørskov, J. K.

N. Lopez and J. K. Nørskov, “Theoretical study of the Au/TiO2 (110) interface,” Surf. Sci. 515, 175–186 (2002).
[CrossRef]

Onishi, H.

H. Onishi, T. Aruga, C. Egawa, and Y. Iwasawa, “Photoelectron spectroscopic study of clean and co adsorbed Ni/TiO2 (110) interfaces,” Surf. Sci. 233, 261–268 (1990).
[CrossRef]

Park, D.

Rhoderick, E. H.

E. H. Rhoderick and R. H. Williams, Metal–Semiconductor Contacts (Oxford University, 1988).

Ruan, S.

H. Zhang, C. Feng, C. Liu, T. Xie, J. Zhou, and S. Ruan, “ZrxTi1−xO2 based ultraviolet detectors series,” IEEE Electron Device Lett. 32, 934–936 (2011).
[CrossRef]

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
[CrossRef]

Salzman, J.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79, 1417–1419 (2001).
[CrossRef]

Sato, K.

T. Masu, S. Khunkhao, K. Kobayashi, S. Niemcharoen, S. Supadech, and K. Sato, “Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region,” Solid-State Electron. 47, 1385–1390(2003).
[CrossRef]

Sharma, R. P.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787–2789 (2001).
[CrossRef]

Shen, H.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787–2789 (2001).
[CrossRef]

Shen, L.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
[CrossRef]

Stucky, G. D.

J. Tang, M. White, G. D. Stucky, and E. W. McFarland, “Electrochemical fabrication of large-area Au/TiO2 junctions,” Electrochem. Commun. 5, 497–501 (2003).
[CrossRef]

Supadech, S.

T. Masu, S. Khunkhao, K. Kobayashi, S. Niemcharoen, S. Supadech, and K. Sato, “Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region,” Solid-State Electron. 47, 1385–1390(2003).
[CrossRef]

Tang, J.

J. Tang, M. White, G. D. Stucky, and E. W. McFarland, “Electrochemical fabrication of large-area Au/TiO2 junctions,” Electrochem. Commun. 5, 497–501 (2003).
[CrossRef]

Tao, C.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
[CrossRef]

Tucciarone, A.

A. Balducci, M. Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, and G. Verona-Rinati, “Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition,” Appl. Phys. Lett. 86, 193509 (2005).
[CrossRef]

Turut, A.

G. Guler, O. Gullu, O. F. Bakkaloglu, and A. Turut, “Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition,” Physica B 403, 2211–2214 (2008).
[CrossRef]

Venkatesan, T.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787–2789 (2001).
[CrossRef]

Verona-Rinati, G.

A. Balducci, M. Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, and G. Verona-Rinati, “Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition,” Appl. Phys. Lett. 86, 193509 (2005).
[CrossRef]

Vispute, R. D.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787–2789 (2001).
[CrossRef]

White, M.

J. Tang, M. White, G. D. Stucky, and E. W. McFarland, “Electrochemical fabrication of large-area Au/TiO2 junctions,” Electrochem. Commun. 5, 497–501 (2003).
[CrossRef]

Williams, R. H.

E. H. Rhoderick and R. H. Williams, Metal–Semiconductor Contacts (Oxford University, 1988).

Xie, T.

H. Zhang, C. Feng, C. Liu, T. Xie, J. Zhou, and S. Ruan, “ZrxTi1−xO2 based ultraviolet detectors series,” IEEE Electron Device Lett. 32, 934–936 (2011).
[CrossRef]

Xue, H.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Yang, W.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787–2789 (2001).
[CrossRef]

Zhang, H.

H. Zhang, C. Feng, C. Liu, T. Xie, J. Zhou, and S. Ruan, “ZrxTi1−xO2 based ultraviolet detectors series,” IEEE Electron Device Lett. 32, 934–936 (2011).
[CrossRef]

Zhang, X.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
[CrossRef]

Zhou, J.

H. Zhang, C. Feng, C. Liu, T. Xie, J. Zhou, and S. Ruan, “ZrxTi1−xO2 based ultraviolet detectors series,” IEEE Electron Device Lett. 32, 934–936 (2011).
[CrossRef]

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
[CrossRef]

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Appl. Opt. (2)

Appl. Phys. Lett. (5)

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94, 123502 (2009).
[CrossRef]

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

A. Balducci, M. Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, and G. Verona-Rinati, “Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition,” Appl. Phys. Lett. 86, 193509 (2005).
[CrossRef]

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787–2789 (2001).
[CrossRef]

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79, 1417–1419 (2001).
[CrossRef]

Electrochem. Commun. (1)

J. Tang, M. White, G. D. Stucky, and E. W. McFarland, “Electrochemical fabrication of large-area Au/TiO2 junctions,” Electrochem. Commun. 5, 497–501 (2003).
[CrossRef]

IEEE Electron Device Lett. (1)

H. Zhang, C. Feng, C. Liu, T. Xie, J. Zhou, and S. Ruan, “ZrxTi1−xO2 based ultraviolet detectors series,” IEEE Electron Device Lett. 32, 934–936 (2011).
[CrossRef]

Physica B (1)

G. Guler, O. Gullu, O. F. Bakkaloglu, and A. Turut, “Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition,” Physica B 403, 2211–2214 (2008).
[CrossRef]

Solid-State Electron. (1)

T. Masu, S. Khunkhao, K. Kobayashi, S. Niemcharoen, S. Supadech, and K. Sato, “Photosensing properties of interdigitated metal–semiconductor–metal structures with undepleted region,” Solid-State Electron. 47, 1385–1390(2003).
[CrossRef]

Surf. Sci. (2)

H. Onishi, T. Aruga, C. Egawa, and Y. Iwasawa, “Photoelectron spectroscopic study of clean and co adsorbed Ni/TiO2 (110) interfaces,” Surf. Sci. 233, 261–268 (1990).
[CrossRef]

N. Lopez and J. K. Nørskov, “Theoretical study of the Au/TiO2 (110) interface,” Surf. Sci. 515, 175–186 (2002).
[CrossRef]

Other (2)

E. H. Rhoderick and R. H. Williams, Metal–Semiconductor Contacts (Oxford University, 1988).

W. Monch, Electronic Properties of Semiconductor Interfaces (Springer, 2004).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1.
Fig. 1.

Dark current of Au/TiO2/Au and Ni/TiO2/Ni PDs. The inset shows the schematic band diagram for the biased MSM structure. (1) Thermionic emission/diffusion, (2) thermionic-field emission (tunneling current), (3) generation–recombination in the depletion region (G–R current), (4) combination in the undepletion region (minority carrier injection).

Fig. 2.
Fig. 2.

Statistical distribution of SBHs for devices of Ni/TiO2/Ni and Au/TiO2/Au.

Fig. 3.
Fig. 3.

I–V characteristics of the Au/TiO2/Au and Ni/TiO2/Ni PDs under 260 nm UV light. The inset shows the spectral response of the two PDs at 5 V bias.

Fig. 4.
Fig. 4.

I–V characteristics of the Ni/TiO2/Ni PD with varying optical power. The inset shows the device structure.

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

I=I0(exp(qV/nkT)1),
I0=AeffA*T2exp(qΦ/kT),
A*=ARmn*m0,

Metrics