Abstract
We present a gated silicon single-photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon-detection efficiency of at 808 nm with dark count per nanosecond at 30 V of excess bias and . We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the “charge persistence” effect, whereby a detector clicks some time after having been illuminated.
© 2012 Optical Society of America
Full Article | PDF ArticleMore Like This
Thiago Ferreira da Silva
Appl. Opt. 55(7) 1565-1570 (2016)
Thiago Ferreira da Silva, Guilherme B. Xavier, Guilherme P. Temporão, and Jean Pierre von der Weid
Opt. Express 20(17) 18911-18924 (2012)
Shingo Mandai, Matthew W. Fishburn, Yuki Maruyama, and Edoardo Charbon
Opt. Express 20(6) 5849-5857 (2012)