Abstract
In search of a better transparent contact to -GaN, we analyze various metal/indium-tin-oxide (ITO) (Ag/ITO, AgCu/ITO, Ni/ITO, and NiZn/ITO) contact schemes and compare to Ni/Au, NiZn/Ag, and ITO. The metal layer boosts conductivity while the ITO thickness can be adjusted to constructive transmission interference on GaN that exceeds extraction from bare GaN. We find a best compromise for an Ag/ITO () ohmic contact with a relative transmittance of 97% of the bare GaN near 530 nm and a specific contact resistance of . The contact proves suitable for green light-emitting diodes in epi-up geometry.
© 2012 Optical Society of America
Full Article | PDF ArticleMore Like This
Shu-Yen Liu, J. K. Sheu, M. L. Lee, Yu-Chuan Lin, S. J. Tu, F. W. Huang, and W. C. Lai
Opt. Express 20(S2) A190-A196 (2012)
Yi-Jung Liu, Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Jian-Kai Liou, Tsung-Yuan Tsai, and Wen-Chau Liu
Opt. Express 19(15) 14662-14670 (2011)
Wei-Chih Lai, Chih-Nan Lin, Yi-Chun Lai, Peichen Yu, Gou Chung Chi, and Shoou-Jinn Chang
Opt. Express 22(S2) A396-A401 (2014)