Abstract

A new method of photodetector performance enhancement using an embedded optical accelerator circuit within the photodetector is proposed. The principle of optical tweezer generation using a light pulse within a PANDA ring is also reviewed. By using a modified add-drop optical filter known as a PANDA microring resonator, which is embedded within the photodetector circuit, the device performance can be improved by using an electron injection technique, in which electrons can be trapped by optical tweezers generated by a PANDA ring resonator. Finally, electrons can move faster within the device via the optical waveguide without trapping center in the silicon bulk to the contact, in which the increase in photodetector current is seen. Simulation results obtained have shown that the device’s light currents are increased by the order of four, and the switching time is increased by the order of five. This technique can be used for better photodetector performance and other semiconductor applications in the future.

© 2012 Optical Society of America

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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  30. K. Svoboda and S. M. Block, “Biological applications of optical forces,” Annu. Rev. Biophys. Biomol. Struct. 23, 247–285 (1994).
    [CrossRef]
  31. A. Ashkin, J. M. Dziedzic, and T. Yamane, “Optical trapping and manipulation of single cells using infrared laser beams,” Nature 330, 769–771 (1987).
    [CrossRef]
  32. J. Zhu, S. K. Ozdemir, Y. F. Xiao, L. Li, L. He, D. Chen, and L. Yang, “On-chip single nanoparticle detection and sizing by mode splitting in an ultrahigh-Q micro-resonator,” Nat. Photon. 4, 46–49 (2009).
    [CrossRef]
  33. P. Hazdra and V. Komarnitsky, “Lifetime control in silicon power P-i-N diode by ion irradiation: suppression of undesired leakage,” Microelectron. J. 37, 197–203 (2006).
    [CrossRef]
  34. E. F. Da Silva, E. A. De Vasconcelos, and V. N. Freire, “Time evolution of SiO2/Si interface defects and dopant passivation in MOS capacitors,” Microelectron. Eng. 51-52, 567–574 (2000).
    [CrossRef]
  35. A. J. Flewitt, S. Lin, W. I. Milne, R. B. Wehrspohn, and M. J. Powell, “Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors,” J. Non-Cryst. Solids 352, 1700–1703 (2006).
    [CrossRef]

2012 (2)

I. Srithanachai, S. Ueamanapong, A. Poyai, S. Niemcharoen, and P. P. Yupapin, “An experimental investigation of p-n diode electrical characteristics by soft x-ray annealing method,” Opt. Laser Technol. 44, 635–639 (2012).
[CrossRef]

M. S. Aziz, N. Suwanpayak, M. A. Jalil, R. Jomtarak, T. Saktioto, J. Ali, and P. P. Yupapin, “Gold nonoparticle trapping and delivery for therapeutic applications,” Int. J. Nanomed. 7, 11–17 (2012).
[CrossRef]

2011 (4)

A. D. Zebentout, Z. Bensaad, M. Zegaoui, A. Aissat, and D. Decoster, “Effect of dimension parameters on the current of MSM photodetector,” Microelectron. J. 42, 1006–1009 (2011).
[CrossRef]

M. Sumetsky, D. J. Digiovanni, Y. Dulashko, M. Fini, X. Liu, E. M. Monberg, and T. F. Taunay, “Surface nanoscale axial photonics: robust fabrication of high-quality-factor microresonators,” Opt. Lett. 36, 4824–4826 (2011).
[CrossRef]

N. Suwanpayak, C. Teeka, and P. P. Yupapin, “Hybrid transistor manipulation controlled by light,” Microw. Opt. Technol. Lett. 53, 2533–2537 (2011).
[CrossRef]

N. Suwanpauak, M. A. Jalil, C. Teeka, J. Ali, and P. P. Yupapin, “Optical vortices generated by a PANDA ring resonator for drug trapping and delivery applications,” Biomed. Opt. Express 2, 159–168 (2011).
[CrossRef]

2010 (3)

P. P. Yupapin, “Generalized quantum key distribution via micro ring resonator for mobile telephone networks,” Optik 121, 422–425 (2010).
[CrossRef]

M. Tasakorn, C. Teeka, R. Jomtarak, and P. P. Yupapin, “Multitweezers generation control within a nanoring resonator system,” Opt. Eng. 49, 075002 (2010).
[CrossRef]

K. Kulsititat, W. Techithdeera, and P. P. Yupapin, “Dynamic potential well generation and control using double resonators incorporating in an add/drop filter,” Mod. Phys. Lett. B 24, 3071–3080 (2010).
[CrossRef]

2009 (3)

S. Mitatha, N. Pornsuwancharoen, and P. P. Yupapin, “A simultaneous short-wave and millimeter-wave generation using a soliton pulse within a nano-waveguide,” IEEE Photon. Technol. Lett. 21, 932–934 (2009).
[CrossRef]

S. Wu, T. Plisson, R. C. Brown, W. D. Phillips, and J. V. Porto, “A multi-photon magneto-optical trap,” Phys. Rev. Lett. 103, 173003 (2009).
[CrossRef]

J. Zhu, S. K. Ozdemir, Y. F. Xiao, L. Li, L. He, D. Chen, and L. Yang, “On-chip single nanoparticle detection and sizing by mode splitting in an ultrahigh-Q micro-resonator,” Nat. Photon. 4, 46–49 (2009).
[CrossRef]

2008 (3)

A. Beaurain, D. Luxembourg, C. Dufour, V. Koncar, B. Capoen, and M. Bouazaoui, “Effects of annealing temperature and heat-treatment duration on electrical properties of sol-gel derived indium-tin-oxide thin films,” Thin Solid Films 516, 4102–4106 (2008).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, L. H. Fang, K. J. Chen, X. L. Du, and Q. K. Xue, “ZnO-based MIS photodetector,” Sens. Actuators A 141, 225–229(2008).
[CrossRef]

F. Eneman, M. Wiot, A. Brugere, O. S. I. Casain, S. Sonde, and D. P. Brunco, “Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions,” IEEE Trans. Electron Devices 55, 2287–2296 (2008).
[CrossRef]

2007 (1)

G. D. Sharma, V. S. Choudhary, and M. S. Roy, “Effect of annealing on the optical, electrical, and photovoltaic properties of bulk hetero-junction device based on PPAT:TY blend,” Solar Energy Mater. Sol. Cells 91, 275–284 (2007).
[CrossRef]

2006 (5)

G. F. D. Betta, C. Piemonte, M. Boscardin, P. Gregori, N. Zorzi, A. Fazzi, and G. U. Pignatel, “An improved PIN photodetector with integrated JFET on high-resistivity silicon,” Nucl. Instrum. Methods Phys. Res. A 567, 368–371 (2006).
[CrossRef]

M. Bigas, E. Cabruja, J. Forest, and J. Salvi, “Review of CMOS image sensors,” Microelectron. J. 37, 433–451 (2006).
[CrossRef]

P. Hazdra and V. Komarnitsky, “Lifetime control in silicon power P-i-N diode by ion irradiation: suppression of undesired leakage,” Microelectron. J. 37, 197–203 (2006).
[CrossRef]

A. J. Flewitt, S. Lin, W. I. Milne, R. B. Wehrspohn, and M. J. Powell, “Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors,” J. Non-Cryst. Solids 352, 1700–1703 (2006).
[CrossRef]

J. R. Moffitt, Y. R. Chemla, C. Izhaky, and C. Bustamante, “Differential detection of dual traps improves the spatial resolution of optical tweezers,” Proc. Natl. Acad. Sci. U.S.A. 103, 9006–9011 (2006).
[CrossRef]

2003 (1)

K. Takakura, H. Ohyama, T. Yoshida, H. Murakawa, J. M. Rafi, R. Job, A. Ulyashin, E. Simoen, and C. Claeys, “Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon,” Physica B (Amsterdam) 340–342, 1022–1025 (2003).
[CrossRef]

2002 (2)

W. Grange, S. Husale, H. J. Guntherodt, and M. Hegner, “Optical tweezers system measuring the change in light momentum flux,” Rev. Sci. Instrum. 73, 2308–2316(2002).
[CrossRef]

Y. Z. Chiou, Y. K. Su, S. J. Chang, Y. C. Lin, C. S. Chang, and C. H. Chen, “InGaN/GaN MQW p-n junction photodetector,” Solid-State Electron. 46, 2227–2229 (2002).
[CrossRef]

2001 (1)

K. Hayama, H. Ohyama, E. Simoen, C. Claeys, A. Poyai, T. Miura, and K. Kobayashi, “Radiation defects in STI silicon diodes and their effects on device performance,” Physica B (Amsterdam) 308-310, 1217–1221 (2001).
[CrossRef]

2000 (1)

E. F. Da Silva, E. A. De Vasconcelos, and V. N. Freire, “Time evolution of SiO2/Si interface defects and dopant passivation in MOS capacitors,” Microelectron. Eng. 51-52, 567–574 (2000).
[CrossRef]

1999 (1)

A. Czerwinski, “Defect-related local-electric-field impact on p-n junction parameters,” Appl. Phys. Lett. 75, 3971–3973 (1999).
[CrossRef]

1996 (2)

M. Valdinoci, L. Colalongo, A. Pellegrini, and M. Rudan, “Analysis of conductivity degradation in gold/platinum-doped silicon,” IEEE Trans. Electron Devices 43, 2269–2275(1996).
[CrossRef]

J. Y. Cheng, D. J. Eaglesham, D. C. Jacobson, P. A. Stolk, J. L. Benton, and J. M. Poate, “Formation of extended defects in silicon by high energy implantation of B and P,” J. Appl. Phys. 80, 2105–2112 (1996).
[CrossRef]

1995 (1)

J. Vanhellemont, E. Simoen, and C. Claeys, “Extraction of the minority carrier recombination lifetime from forward diode characteristics,” Appl. Phys. Lett. 66, 2894–2896(1995).
[CrossRef]

1994 (1)

K. Svoboda and S. M. Block, “Biological applications of optical forces,” Annu. Rev. Biophys. Biomol. Struct. 23, 247–285 (1994).
[CrossRef]

1992 (1)

A. Ashkin, “Forces of a single-beam gradient force on a dielectric sphere in the ray of optic regime,” Biophys. J. 61, 569–582 (1992).
[CrossRef]

1990 (1)

A. Ashkin, K. Schutze, M. M. Dziedzic, U. Euteneuer, and M. Schliwa, “Force generation of organelle transport measured in vivo by and infrared laser trap,” Nature 348, 346–348 (1990).
[CrossRef]

1987 (1)

A. Ashkin, J. M. Dziedzic, and T. Yamane, “Optical trapping and manipulation of single cells using infrared laser beams,” Nature 330, 769–771 (1987).
[CrossRef]

Aissat, A.

A. D. Zebentout, Z. Bensaad, M. Zegaoui, A. Aissat, and D. Decoster, “Effect of dimension parameters on the current of MSM photodetector,” Microelectron. J. 42, 1006–1009 (2011).
[CrossRef]

Ali, J.

M. S. Aziz, N. Suwanpayak, M. A. Jalil, R. Jomtarak, T. Saktioto, J. Ali, and P. P. Yupapin, “Gold nonoparticle trapping and delivery for therapeutic applications,” Int. J. Nanomed. 7, 11–17 (2012).
[CrossRef]

N. Suwanpauak, M. A. Jalil, C. Teeka, J. Ali, and P. P. Yupapin, “Optical vortices generated by a PANDA ring resonator for drug trapping and delivery applications,” Biomed. Opt. Express 2, 159–168 (2011).
[CrossRef]

Ashkin, A.

A. Ashkin, “Forces of a single-beam gradient force on a dielectric sphere in the ray of optic regime,” Biophys. J. 61, 569–582 (1992).
[CrossRef]

A. Ashkin, K. Schutze, M. M. Dziedzic, U. Euteneuer, and M. Schliwa, “Force generation of organelle transport measured in vivo by and infrared laser trap,” Nature 348, 346–348 (1990).
[CrossRef]

A. Ashkin, J. M. Dziedzic, and T. Yamane, “Optical trapping and manipulation of single cells using infrared laser beams,” Nature 330, 769–771 (1987).
[CrossRef]

Aziz, M. S.

M. S. Aziz, N. Suwanpayak, M. A. Jalil, R. Jomtarak, T. Saktioto, J. Ali, and P. P. Yupapin, “Gold nonoparticle trapping and delivery for therapeutic applications,” Int. J. Nanomed. 7, 11–17 (2012).
[CrossRef]

Beaurain, A.

A. Beaurain, D. Luxembourg, C. Dufour, V. Koncar, B. Capoen, and M. Bouazaoui, “Effects of annealing temperature and heat-treatment duration on electrical properties of sol-gel derived indium-tin-oxide thin films,” Thin Solid Films 516, 4102–4106 (2008).
[CrossRef]

Bensaad, Z.

A. D. Zebentout, Z. Bensaad, M. Zegaoui, A. Aissat, and D. Decoster, “Effect of dimension parameters on the current of MSM photodetector,” Microelectron. J. 42, 1006–1009 (2011).
[CrossRef]

Benton, J. L.

J. Y. Cheng, D. J. Eaglesham, D. C. Jacobson, P. A. Stolk, J. L. Benton, and J. M. Poate, “Formation of extended defects in silicon by high energy implantation of B and P,” J. Appl. Phys. 80, 2105–2112 (1996).
[CrossRef]

Betta, G. F. D.

G. F. D. Betta, C. Piemonte, M. Boscardin, P. Gregori, N. Zorzi, A. Fazzi, and G. U. Pignatel, “An improved PIN photodetector with integrated JFET on high-resistivity silicon,” Nucl. Instrum. Methods Phys. Res. A 567, 368–371 (2006).
[CrossRef]

Bigas, M.

M. Bigas, E. Cabruja, J. Forest, and J. Salvi, “Review of CMOS image sensors,” Microelectron. J. 37, 433–451 (2006).
[CrossRef]

Block, S. M.

K. Svoboda and S. M. Block, “Biological applications of optical forces,” Annu. Rev. Biophys. Biomol. Struct. 23, 247–285 (1994).
[CrossRef]

Boscardin, M.

G. F. D. Betta, C. Piemonte, M. Boscardin, P. Gregori, N. Zorzi, A. Fazzi, and G. U. Pignatel, “An improved PIN photodetector with integrated JFET on high-resistivity silicon,” Nucl. Instrum. Methods Phys. Res. A 567, 368–371 (2006).
[CrossRef]

Bouazaoui, M.

A. Beaurain, D. Luxembourg, C. Dufour, V. Koncar, B. Capoen, and M. Bouazaoui, “Effects of annealing temperature and heat-treatment duration on electrical properties of sol-gel derived indium-tin-oxide thin films,” Thin Solid Films 516, 4102–4106 (2008).
[CrossRef]

Brown, R. C.

S. Wu, T. Plisson, R. C. Brown, W. D. Phillips, and J. V. Porto, “A multi-photon magneto-optical trap,” Phys. Rev. Lett. 103, 173003 (2009).
[CrossRef]

Brugere, A.

F. Eneman, M. Wiot, A. Brugere, O. S. I. Casain, S. Sonde, and D. P. Brunco, “Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions,” IEEE Trans. Electron Devices 55, 2287–2296 (2008).
[CrossRef]

Brunco, D. P.

F. Eneman, M. Wiot, A. Brugere, O. S. I. Casain, S. Sonde, and D. P. Brunco, “Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions,” IEEE Trans. Electron Devices 55, 2287–2296 (2008).
[CrossRef]

Bustamante, C.

J. R. Moffitt, Y. R. Chemla, C. Izhaky, and C. Bustamante, “Differential detection of dual traps improves the spatial resolution of optical tweezers,” Proc. Natl. Acad. Sci. U.S.A. 103, 9006–9011 (2006).
[CrossRef]

Cabruja, E.

M. Bigas, E. Cabruja, J. Forest, and J. Salvi, “Review of CMOS image sensors,” Microelectron. J. 37, 433–451 (2006).
[CrossRef]

Capoen, B.

A. Beaurain, D. Luxembourg, C. Dufour, V. Koncar, B. Capoen, and M. Bouazaoui, “Effects of annealing temperature and heat-treatment duration on electrical properties of sol-gel derived indium-tin-oxide thin films,” Thin Solid Films 516, 4102–4106 (2008).
[CrossRef]

Casain, O. S. I.

F. Eneman, M. Wiot, A. Brugere, O. S. I. Casain, S. Sonde, and D. P. Brunco, “Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions,” IEEE Trans. Electron Devices 55, 2287–2296 (2008).
[CrossRef]

Chang, C. S.

Y. Z. Chiou, Y. K. Su, S. J. Chang, Y. C. Lin, C. S. Chang, and C. H. Chen, “InGaN/GaN MQW p-n junction photodetector,” Solid-State Electron. 46, 2227–2229 (2002).
[CrossRef]

Chang, S. J.

S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, L. H. Fang, K. J. Chen, X. L. Du, and Q. K. Xue, “ZnO-based MIS photodetector,” Sens. Actuators A 141, 225–229(2008).
[CrossRef]

Y. Z. Chiou, Y. K. Su, S. J. Chang, Y. C. Lin, C. S. Chang, and C. H. Chen, “InGaN/GaN MQW p-n junction photodetector,” Solid-State Electron. 46, 2227–2229 (2002).
[CrossRef]

Chemla, Y. R.

J. R. Moffitt, Y. R. Chemla, C. Izhaky, and C. Bustamante, “Differential detection of dual traps improves the spatial resolution of optical tweezers,” Proc. Natl. Acad. Sci. U.S.A. 103, 9006–9011 (2006).
[CrossRef]

Chen, C. H.

Y. Z. Chiou, Y. K. Su, S. J. Chang, Y. C. Lin, C. S. Chang, and C. H. Chen, “InGaN/GaN MQW p-n junction photodetector,” Solid-State Electron. 46, 2227–2229 (2002).
[CrossRef]

Chen, D.

J. Zhu, S. K. Ozdemir, Y. F. Xiao, L. Li, L. He, D. Chen, and L. Yang, “On-chip single nanoparticle detection and sizing by mode splitting in an ultrahigh-Q micro-resonator,” Nat. Photon. 4, 46–49 (2009).
[CrossRef]

Chen, K. J.

S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, L. H. Fang, K. J. Chen, X. L. Du, and Q. K. Xue, “ZnO-based MIS photodetector,” Sens. Actuators A 141, 225–229(2008).
[CrossRef]

Cheng, J. Y.

J. Y. Cheng, D. J. Eaglesham, D. C. Jacobson, P. A. Stolk, J. L. Benton, and J. M. Poate, “Formation of extended defects in silicon by high energy implantation of B and P,” J. Appl. Phys. 80, 2105–2112 (1996).
[CrossRef]

Chiou, Y. Z.

Y. Z. Chiou, Y. K. Su, S. J. Chang, Y. C. Lin, C. S. Chang, and C. H. Chen, “InGaN/GaN MQW p-n junction photodetector,” Solid-State Electron. 46, 2227–2229 (2002).
[CrossRef]

Choudhary, V. S.

G. D. Sharma, V. S. Choudhary, and M. S. Roy, “Effect of annealing on the optical, electrical, and photovoltaic properties of bulk hetero-junction device based on PPAT:TY blend,” Solar Energy Mater. Sol. Cells 91, 275–284 (2007).
[CrossRef]

Claeys, C.

K. Takakura, H. Ohyama, T. Yoshida, H. Murakawa, J. M. Rafi, R. Job, A. Ulyashin, E. Simoen, and C. Claeys, “Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon,” Physica B (Amsterdam) 340–342, 1022–1025 (2003).
[CrossRef]

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J. Y. Cheng, D. J. Eaglesham, D. C. Jacobson, P. A. Stolk, J. L. Benton, and J. M. Poate, “Formation of extended defects in silicon by high energy implantation of B and P,” J. Appl. Phys. 80, 2105–2112 (1996).
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F. Eneman, M. Wiot, A. Brugere, O. S. I. Casain, S. Sonde, and D. P. Brunco, “Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions,” IEEE Trans. Electron Devices 55, 2287–2296 (2008).
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S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, L. H. Fang, K. J. Chen, X. L. Du, and Q. K. Xue, “ZnO-based MIS photodetector,” Sens. Actuators A 141, 225–229(2008).
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G. F. D. Betta, C. Piemonte, M. Boscardin, P. Gregori, N. Zorzi, A. Fazzi, and G. U. Pignatel, “An improved PIN photodetector with integrated JFET on high-resistivity silicon,” Nucl. Instrum. Methods Phys. Res. A 567, 368–371 (2006).
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J. Zhu, S. K. Ozdemir, Y. F. Xiao, L. Li, L. He, D. Chen, and L. Yang, “On-chip single nanoparticle detection and sizing by mode splitting in an ultrahigh-Q micro-resonator,” Nat. Photon. 4, 46–49 (2009).
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J. Y. Cheng, D. J. Eaglesham, D. C. Jacobson, P. A. Stolk, J. L. Benton, and J. M. Poate, “Formation of extended defects in silicon by high energy implantation of B and P,” J. Appl. Phys. 80, 2105–2112 (1996).
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M. S. Aziz, N. Suwanpayak, M. A. Jalil, R. Jomtarak, T. Saktioto, J. Ali, and P. P. Yupapin, “Gold nonoparticle trapping and delivery for therapeutic applications,” Int. J. Nanomed. 7, 11–17 (2012).
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N. Suwanpauak, M. A. Jalil, C. Teeka, J. Ali, and P. P. Yupapin, “Optical vortices generated by a PANDA ring resonator for drug trapping and delivery applications,” Biomed. Opt. Express 2, 159–168 (2011).
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Ji, L. W.

S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, L. H. Fang, K. J. Chen, X. L. Du, and Q. K. Xue, “ZnO-based MIS photodetector,” Sens. Actuators A 141, 225–229(2008).
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Job, R.

K. Takakura, H. Ohyama, T. Yoshida, H. Murakawa, J. M. Rafi, R. Job, A. Ulyashin, E. Simoen, and C. Claeys, “Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon,” Physica B (Amsterdam) 340–342, 1022–1025 (2003).
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Jomtarak, R.

M. S. Aziz, N. Suwanpayak, M. A. Jalil, R. Jomtarak, T. Saktioto, J. Ali, and P. P. Yupapin, “Gold nonoparticle trapping and delivery for therapeutic applications,” Int. J. Nanomed. 7, 11–17 (2012).
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M. Tasakorn, C. Teeka, R. Jomtarak, and P. P. Yupapin, “Multitweezers generation control within a nanoring resonator system,” Opt. Eng. 49, 075002 (2010).
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K. Hayama, H. Ohyama, E. Simoen, C. Claeys, A. Poyai, T. Miura, and K. Kobayashi, “Radiation defects in STI silicon diodes and their effects on device performance,” Physica B (Amsterdam) 308-310, 1217–1221 (2001).
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P. Hazdra and V. Komarnitsky, “Lifetime control in silicon power P-i-N diode by ion irradiation: suppression of undesired leakage,” Microelectron. J. 37, 197–203 (2006).
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A. Beaurain, D. Luxembourg, C. Dufour, V. Koncar, B. Capoen, and M. Bouazaoui, “Effects of annealing temperature and heat-treatment duration on electrical properties of sol-gel derived indium-tin-oxide thin films,” Thin Solid Films 516, 4102–4106 (2008).
[CrossRef]

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K. Kulsititat, W. Techithdeera, and P. P. Yupapin, “Dynamic potential well generation and control using double resonators incorporating in an add/drop filter,” Mod. Phys. Lett. B 24, 3071–3080 (2010).
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S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, L. H. Fang, K. J. Chen, X. L. Du, and Q. K. Xue, “ZnO-based MIS photodetector,” Sens. Actuators A 141, 225–229(2008).
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J. Zhu, S. K. Ozdemir, Y. F. Xiao, L. Li, L. He, D. Chen, and L. Yang, “On-chip single nanoparticle detection and sizing by mode splitting in an ultrahigh-Q micro-resonator,” Nat. Photon. 4, 46–49 (2009).
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S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, L. H. Fang, K. J. Chen, X. L. Du, and Q. K. Xue, “ZnO-based MIS photodetector,” Sens. Actuators A 141, 225–229(2008).
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A. J. Flewitt, S. Lin, W. I. Milne, R. B. Wehrspohn, and M. J. Powell, “Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors,” J. Non-Cryst. Solids 352, 1700–1703 (2006).
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M. P. Sheetz, L. Wilson, and P. Matsudaira, Laser Tweezer in Cell Biology (Academic, 1997).

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A. J. Flewitt, S. Lin, W. I. Milne, R. B. Wehrspohn, and M. J. Powell, “Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors,” J. Non-Cryst. Solids 352, 1700–1703 (2006).
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S. Mitatha, N. Pornsuwancharoen, and P. P. Yupapin, “A simultaneous short-wave and millimeter-wave generation using a soliton pulse within a nano-waveguide,” IEEE Photon. Technol. Lett. 21, 932–934 (2009).
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K. Hayama, H. Ohyama, E. Simoen, C. Claeys, A. Poyai, T. Miura, and K. Kobayashi, “Radiation defects in STI silicon diodes and their effects on device performance,” Physica B (Amsterdam) 308-310, 1217–1221 (2001).
[CrossRef]

Moffitt, J. R.

J. R. Moffitt, Y. R. Chemla, C. Izhaky, and C. Bustamante, “Differential detection of dual traps improves the spatial resolution of optical tweezers,” Proc. Natl. Acad. Sci. U.S.A. 103, 9006–9011 (2006).
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Monberg, E. M.

Murakawa, H.

K. Takakura, H. Ohyama, T. Yoshida, H. Murakawa, J. M. Rafi, R. Job, A. Ulyashin, E. Simoen, and C. Claeys, “Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon,” Physica B (Amsterdam) 340–342, 1022–1025 (2003).
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I. Srithanachai, S. Ueamanapong, A. Poyai, S. Niemcharoen, and P. P. Yupapin, “An experimental investigation of p-n diode electrical characteristics by soft x-ray annealing method,” Opt. Laser Technol. 44, 635–639 (2012).
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K. Takakura, H. Ohyama, T. Yoshida, H. Murakawa, J. M. Rafi, R. Job, A. Ulyashin, E. Simoen, and C. Claeys, “Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon,” Physica B (Amsterdam) 340–342, 1022–1025 (2003).
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K. Hayama, H. Ohyama, E. Simoen, C. Claeys, A. Poyai, T. Miura, and K. Kobayashi, “Radiation defects in STI silicon diodes and their effects on device performance,” Physica B (Amsterdam) 308-310, 1217–1221 (2001).
[CrossRef]

Ozdemir, S. K.

J. Zhu, S. K. Ozdemir, Y. F. Xiao, L. Li, L. He, D. Chen, and L. Yang, “On-chip single nanoparticle detection and sizing by mode splitting in an ultrahigh-Q micro-resonator,” Nat. Photon. 4, 46–49 (2009).
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M. Valdinoci, L. Colalongo, A. Pellegrini, and M. Rudan, “Analysis of conductivity degradation in gold/platinum-doped silicon,” IEEE Trans. Electron Devices 43, 2269–2275(1996).
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G. F. D. Betta, C. Piemonte, M. Boscardin, P. Gregori, N. Zorzi, A. Fazzi, and G. U. Pignatel, “An improved PIN photodetector with integrated JFET on high-resistivity silicon,” Nucl. Instrum. Methods Phys. Res. A 567, 368–371 (2006).
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G. F. D. Betta, C. Piemonte, M. Boscardin, P. Gregori, N. Zorzi, A. Fazzi, and G. U. Pignatel, “An improved PIN photodetector with integrated JFET on high-resistivity silicon,” Nucl. Instrum. Methods Phys. Res. A 567, 368–371 (2006).
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S. Wu, T. Plisson, R. C. Brown, W. D. Phillips, and J. V. Porto, “A multi-photon magneto-optical trap,” Phys. Rev. Lett. 103, 173003 (2009).
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J. Y. Cheng, D. J. Eaglesham, D. C. Jacobson, P. A. Stolk, J. L. Benton, and J. M. Poate, “Formation of extended defects in silicon by high energy implantation of B and P,” J. Appl. Phys. 80, 2105–2112 (1996).
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Pornsuwancharoen, N.

S. Mitatha, N. Pornsuwancharoen, and P. P. Yupapin, “A simultaneous short-wave and millimeter-wave generation using a soliton pulse within a nano-waveguide,” IEEE Photon. Technol. Lett. 21, 932–934 (2009).
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Porto, J. V.

S. Wu, T. Plisson, R. C. Brown, W. D. Phillips, and J. V. Porto, “A multi-photon magneto-optical trap,” Phys. Rev. Lett. 103, 173003 (2009).
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Powell, M. J.

A. J. Flewitt, S. Lin, W. I. Milne, R. B. Wehrspohn, and M. J. Powell, “Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors,” J. Non-Cryst. Solids 352, 1700–1703 (2006).
[CrossRef]

Poyai, A.

I. Srithanachai, S. Ueamanapong, A. Poyai, S. Niemcharoen, and P. P. Yupapin, “An experimental investigation of p-n diode electrical characteristics by soft x-ray annealing method,” Opt. Laser Technol. 44, 635–639 (2012).
[CrossRef]

K. Hayama, H. Ohyama, E. Simoen, C. Claeys, A. Poyai, T. Miura, and K. Kobayashi, “Radiation defects in STI silicon diodes and their effects on device performance,” Physica B (Amsterdam) 308-310, 1217–1221 (2001).
[CrossRef]

Rafi, J. M.

K. Takakura, H. Ohyama, T. Yoshida, H. Murakawa, J. M. Rafi, R. Job, A. Ulyashin, E. Simoen, and C. Claeys, “Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon,” Physica B (Amsterdam) 340–342, 1022–1025 (2003).
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Roy, M. S.

G. D. Sharma, V. S. Choudhary, and M. S. Roy, “Effect of annealing on the optical, electrical, and photovoltaic properties of bulk hetero-junction device based on PPAT:TY blend,” Solar Energy Mater. Sol. Cells 91, 275–284 (2007).
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Rudan, M.

M. Valdinoci, L. Colalongo, A. Pellegrini, and M. Rudan, “Analysis of conductivity degradation in gold/platinum-doped silicon,” IEEE Trans. Electron Devices 43, 2269–2275(1996).
[CrossRef]

Saktioto, T.

M. S. Aziz, N. Suwanpayak, M. A. Jalil, R. Jomtarak, T. Saktioto, J. Ali, and P. P. Yupapin, “Gold nonoparticle trapping and delivery for therapeutic applications,” Int. J. Nanomed. 7, 11–17 (2012).
[CrossRef]

Salvi, J.

M. Bigas, E. Cabruja, J. Forest, and J. Salvi, “Review of CMOS image sensors,” Microelectron. J. 37, 433–451 (2006).
[CrossRef]

Schliwa, M.

A. Ashkin, K. Schutze, M. M. Dziedzic, U. Euteneuer, and M. Schliwa, “Force generation of organelle transport measured in vivo by and infrared laser trap,” Nature 348, 346–348 (1990).
[CrossRef]

Schutze, K.

A. Ashkin, K. Schutze, M. M. Dziedzic, U. Euteneuer, and M. Schliwa, “Force generation of organelle transport measured in vivo by and infrared laser trap,” Nature 348, 346–348 (1990).
[CrossRef]

Sharma, G. D.

G. D. Sharma, V. S. Choudhary, and M. S. Roy, “Effect of annealing on the optical, electrical, and photovoltaic properties of bulk hetero-junction device based on PPAT:TY blend,” Solar Energy Mater. Sol. Cells 91, 275–284 (2007).
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M. P. Sheetz, L. Wilson, and P. Matsudaira, Laser Tweezer in Cell Biology (Academic, 1997).

Simoen, E.

K. Takakura, H. Ohyama, T. Yoshida, H. Murakawa, J. M. Rafi, R. Job, A. Ulyashin, E. Simoen, and C. Claeys, “Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon,” Physica B (Amsterdam) 340–342, 1022–1025 (2003).
[CrossRef]

K. Hayama, H. Ohyama, E. Simoen, C. Claeys, A. Poyai, T. Miura, and K. Kobayashi, “Radiation defects in STI silicon diodes and their effects on device performance,” Physica B (Amsterdam) 308-310, 1217–1221 (2001).
[CrossRef]

J. Vanhellemont, E. Simoen, and C. Claeys, “Extraction of the minority carrier recombination lifetime from forward diode characteristics,” Appl. Phys. Lett. 66, 2894–2896(1995).
[CrossRef]

Sonde, S.

F. Eneman, M. Wiot, A. Brugere, O. S. I. Casain, S. Sonde, and D. P. Brunco, “Impact of donor concentration, electric field, and temperature effects on the leakage current in germanium p+/n junctions,” IEEE Trans. Electron Devices 55, 2287–2296 (2008).
[CrossRef]

Srithanachai, I.

I. Srithanachai, S. Ueamanapong, A. Poyai, S. Niemcharoen, and P. P. Yupapin, “An experimental investigation of p-n diode electrical characteristics by soft x-ray annealing method,” Opt. Laser Technol. 44, 635–639 (2012).
[CrossRef]

Stolk, P. A.

J. Y. Cheng, D. J. Eaglesham, D. C. Jacobson, P. A. Stolk, J. L. Benton, and J. M. Poate, “Formation of extended defects in silicon by high energy implantation of B and P,” J. Appl. Phys. 80, 2105–2112 (1996).
[CrossRef]

Su, Y. K.

Y. Z. Chiou, Y. K. Su, S. J. Chang, Y. C. Lin, C. S. Chang, and C. H. Chen, “InGaN/GaN MQW p-n junction photodetector,” Solid-State Electron. 46, 2227–2229 (2002).
[CrossRef]

Sumetsky, M.

Suwanpauak, N.

Suwanpayak, N.

M. S. Aziz, N. Suwanpayak, M. A. Jalil, R. Jomtarak, T. Saktioto, J. Ali, and P. P. Yupapin, “Gold nonoparticle trapping and delivery for therapeutic applications,” Int. J. Nanomed. 7, 11–17 (2012).
[CrossRef]

N. Suwanpayak, C. Teeka, and P. P. Yupapin, “Hybrid transistor manipulation controlled by light,” Microw. Opt. Technol. Lett. 53, 2533–2537 (2011).
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K. Svoboda and S. M. Block, “Biological applications of optical forces,” Annu. Rev. Biophys. Biomol. Struct. 23, 247–285 (1994).
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K. Takakura, H. Ohyama, T. Yoshida, H. Murakawa, J. M. Rafi, R. Job, A. Ulyashin, E. Simoen, and C. Claeys, “Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon,” Physica B (Amsterdam) 340–342, 1022–1025 (2003).
[CrossRef]

Tasakorn, M.

M. Tasakorn, C. Teeka, R. Jomtarak, and P. P. Yupapin, “Multitweezers generation control within a nanoring resonator system,” Opt. Eng. 49, 075002 (2010).
[CrossRef]

Taunay, T. F.

Techithdeera, W.

K. Kulsititat, W. Techithdeera, and P. P. Yupapin, “Dynamic potential well generation and control using double resonators incorporating in an add/drop filter,” Mod. Phys. Lett. B 24, 3071–3080 (2010).
[CrossRef]

Teeka, C.

N. Suwanpauak, M. A. Jalil, C. Teeka, J. Ali, and P. P. Yupapin, “Optical vortices generated by a PANDA ring resonator for drug trapping and delivery applications,” Biomed. Opt. Express 2, 159–168 (2011).
[CrossRef]

N. Suwanpayak, C. Teeka, and P. P. Yupapin, “Hybrid transistor manipulation controlled by light,” Microw. Opt. Technol. Lett. 53, 2533–2537 (2011).
[CrossRef]

M. Tasakorn, C. Teeka, R. Jomtarak, and P. P. Yupapin, “Multitweezers generation control within a nanoring resonator system,” Opt. Eng. 49, 075002 (2010).
[CrossRef]

Ueamanapong, S.

I. Srithanachai, S. Ueamanapong, A. Poyai, S. Niemcharoen, and P. P. Yupapin, “An experimental investigation of p-n diode electrical characteristics by soft x-ray annealing method,” Opt. Laser Technol. 44, 635–639 (2012).
[CrossRef]

Ulyashin, A.

K. Takakura, H. Ohyama, T. Yoshida, H. Murakawa, J. M. Rafi, R. Job, A. Ulyashin, E. Simoen, and C. Claeys, “Comparison of electron irradiation effect on thermal donors in Cz and oxygen doped FZ silicon,” Physica B (Amsterdam) 340–342, 1022–1025 (2003).
[CrossRef]

Valdinoci, M.

M. Valdinoci, L. Colalongo, A. Pellegrini, and M. Rudan, “Analysis of conductivity degradation in gold/platinum-doped silicon,” IEEE Trans. Electron Devices 43, 2269–2275(1996).
[CrossRef]

Vanhellemont, J.

J. Vanhellemont, E. Simoen, and C. Claeys, “Extraction of the minority carrier recombination lifetime from forward diode characteristics,” Appl. Phys. Lett. 66, 2894–2896(1995).
[CrossRef]

Wehrspohn, R. B.

A. J. Flewitt, S. Lin, W. I. Milne, R. B. Wehrspohn, and M. J. Powell, “Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors,” J. Non-Cryst. Solids 352, 1700–1703 (2006).
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N. Suwanpayak, C. Teeka, and P. P. Yupapin, “Hybrid transistor manipulation controlled by light,” Microw. Opt. Technol. Lett. 53, 2533–2537 (2011).
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K. Kulsititat, W. Techithdeera, and P. P. Yupapin, “Dynamic potential well generation and control using double resonators incorporating in an add/drop filter,” Mod. Phys. Lett. B 24, 3071–3080 (2010).
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Nat. Photon. (1)

J. Zhu, S. K. Ozdemir, Y. F. Xiao, L. Li, L. He, D. Chen, and L. Yang, “On-chip single nanoparticle detection and sizing by mode splitting in an ultrahigh-Q micro-resonator,” Nat. Photon. 4, 46–49 (2009).
[CrossRef]

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M. Tasakorn, C. Teeka, R. Jomtarak, and P. P. Yupapin, “Multitweezers generation control within a nanoring resonator system,” Opt. Eng. 49, 075002 (2010).
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Opt. Laser Technol. (1)

I. Srithanachai, S. Ueamanapong, A. Poyai, S. Niemcharoen, and P. P. Yupapin, “An experimental investigation of p-n diode electrical characteristics by soft x-ray annealing method,” Opt. Laser Technol. 44, 635–639 (2012).
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P. P. Yupapin, “Generalized quantum key distribution via micro ring resonator for mobile telephone networks,” Optik 121, 422–425 (2010).
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S. Wu, T. Plisson, R. C. Brown, W. D. Phillips, and J. V. Porto, “A multi-photon magneto-optical trap,” Phys. Rev. Lett. 103, 173003 (2009).
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S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, L. H. Fang, K. J. Chen, X. L. Du, and Q. K. Xue, “ZnO-based MIS photodetector,” Sens. Actuators A 141, 225–229(2008).
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Other (1)

M. P. Sheetz, L. Wilson, and P. Matsudaira, Laser Tweezer in Cell Biology (Academic, 1997).

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Figures (5)

Fig. 1.
Fig. 1.

Model of PANDA microring resonator and trapped electron by optical tweezers.

Fig. 2.
Fig. 2.

Schematic diagram of a trapped electron by an optical tweezer.

Fig. 3.
Fig. 3.

Structure of a photodetector circuit, where there are (a) defects in the photodetector, and (b) the photodetector has an embedded PANDA microring.

Fig. 4.
Fig. 4.

Results of dynamic optical tweezers generated by PANDA microring: (a) and (c) the trapped electron and (b) the trapped defects.

Fig. 5.
Fig. 5.

Calculation results of a photodetector light current comparing photodetectors with and without the PANDA microring.

Equations (26)

Equations on this page are rendered with MathJax. Learn more.

Ein(t)=Atanh[TT0]exp[(z2LD)iω0t],
Ein(t)=Asech[TT0]exp[(z2LD)iω0t],
Eadd(t)=E0exp[(z2LD)iω0t],
n=n0+n2I=n0=(n2Aeff)P,
E1=jκi+τ1E4,
E2=exp(jωT/2)exp(αL/4)E1,
E3=τ2E2jκ2Ea,
E4=exp(jωT/2)exp(αL/4)E3,
Et=τtEijκ1E4,
Ed=τ2Eajκ2E2,
|Ed|2=|κ1κ2A1/2Φ1/21τ1τ2AΦEi+τ2τ1AΦ1τ1τ2AΦEa|,
|Et|2=|τ2τ1AΦ1τ1τ2AΦEi+κ1κ2A1/2Φ1/21τ1τ2AΦEa|.
Er1=j1γκ0E111γ1κ0eα2L1jκnL1,
Er2=j1γκ0E1eα2L1jκnL111γ1κ0eα2L1jκnL1.
E0=1γ(1κ0)(1γ)eα2L1jκnL111γ1κ0eα2L1jκnL1.
E0L=E3{1γ3(1κ3)(1γ3)eα2L2jκnL211γ31κ3eα2L2jκnL2},
E1=jx1κ1Ei1+jx1x2y1κ2E0LEi2eα2L2jκnL21x1x2y1y2E0E0Leα2LjκnL,
E3=x2y2E0E1eα2L2jκnL2+jx2κ2Ei2,
E4=x2y2E0E1eα2L2jκnL2+jx2κ2Ei2eα2L2jκnL2.
Et1=x1y1Ei1+(jx1x2y2κ1E0E0LE1x1x2κ1κ2E0LEi2)eα2L2jκ2L2.
Pt1=(Et1)·(Et1)*=|Et1|2.
Et2=x2y2Ei2+jx2κ2E0E1eα2L2jκnL2.
Pt2=(Et2)·(Et2)*=|Et2|2.
F=QnmP/c,
Fscatt=nmSσc,
Fgrad=α2E2,

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