Abstract

A new all-optical flip-flop generating light at two different wavelengths λ1 (state “a”), or λ2 (state “b”) was suggested. It consists of an active layer and a nonlinear wave-guiding layer. Two parallel nonlinear gratings having different periods and periodic negative nonlinearities exist along the propagation direction in the wave-guiding layer. In state “a,” the first grating provides the optical feedback for lasing, and the second grating is weak. In state “b,” due to optical nonlinearity, the first grating weakens, and the second one provides the optical feedback for lasing. The refractive index nonlinearity is due to the direct absorption of photons at the Urbach tail. The device is triggered from state “a” to state “b” and vise versa by input optical pulses of wavelengths λ2 and λ1, respectively. The time domain simulations show switching dynamics in nanosecond time scale.

© 2012 Optical Society of America

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  1. H. J. S. Dorren, M. T. Hill, Y. Liu, N. Calabretta, A. Srivatsa, F. M. Huijskens, H. de Waardt, and G. D. Khoe, “Optical packet switching and buffering by using all-optical signal processing methods,” J. Lightwave Technol. 21, 2–12 (2003).
    [CrossRef]
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    [CrossRef]
  3. A. M. Kaplan, G. P. Agrawal, and D. N. Maywar, “All-optical flip-flop operation of VCSOA,” Electron. Lett. 45, 127–128 (2009).
    [CrossRef]
  4. K. Huybrechts, G. Morthier, and R. Baet, “Fast all optical flipflop based on a single distributed feedback laser diode,” Opt. Express 16, 11405–11410 (2008).
    [CrossRef]
  5. H. Zoweil, “Theoretical modeling of an improved all-optical flip flop based on a nonlinear semiconductor distributed feedback laser structure,” Appl. Opt. 49, 5199–5204 (2010).
    [CrossRef]
  6. H. Haug, ed., Optical Nonlinearities and Instabilities in Semiconductors (Academic, 1988).
  7. B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron. 26, 113–122 (1990).
    [CrossRef]
  8. M. T. Hill, H. de Waardt, G. D. Khoe, and H. J. S. Dorren, “All-optical flip-flop based on coupled laser diodes,” IEEE J. Quantum Electron. 37, 405–413 (2001).
    [CrossRef]
  9. S. Adachi, Physical Properties of IIIV Semiconductor Compounds (Wiley, 2004).
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    [CrossRef]
  11. J. D. Dow and D. Redfield, “Toward a unified theory of Urbach’s rule and exponential absorption edges,” Phys. Rev. B 5, 594–610 (1972).
    [CrossRef]
  12. J. Carrol, J. Whiteaway, and D. Plumb, Distributed Feedback Semiconductor Laser (IEE, 1998).

2010 (2)

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

H. Zoweil, “Theoretical modeling of an improved all-optical flip flop based on a nonlinear semiconductor distributed feedback laser structure,” Appl. Opt. 49, 5199–5204 (2010).
[CrossRef]

2009 (1)

A. M. Kaplan, G. P. Agrawal, and D. N. Maywar, “All-optical flip-flop operation of VCSOA,” Electron. Lett. 45, 127–128 (2009).
[CrossRef]

2008 (1)

2003 (1)

2001 (1)

M. T. Hill, H. de Waardt, G. D. Khoe, and H. J. S. Dorren, “All-optical flip-flop based on coupled laser diodes,” IEEE J. Quantum Electron. 37, 405–413 (2001).
[CrossRef]

1990 (1)

B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron. 26, 113–122 (1990).
[CrossRef]

1972 (1)

J. D. Dow and D. Redfield, “Toward a unified theory of Urbach’s rule and exponential absorption edges,” Phys. Rev. B 5, 594–610 (1972).
[CrossRef]

1965 (1)

J. I. Pankove, “Absorption edge of impure gallium arsenide,” Phys. Rev. 140, A2059–A2065 (1965).
[CrossRef]

Adachi, S.

S. Adachi, Physical Properties of IIIV Semiconductor Compounds (Wiley, 2004).

Agrawal, G. P.

A. M. Kaplan, G. P. Agrawal, and D. N. Maywar, “All-optical flip-flop operation of VCSOA,” Electron. Lett. 45, 127–128 (2009).
[CrossRef]

Baet, R.

Baets, R.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

Bennett, B. R.

B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron. 26, 113–122 (1990).
[CrossRef]

Calabretta, N.

Carrol, J.

J. Carrol, J. Whiteaway, and D. Plumb, Distributed Feedback Semiconductor Laser (IEE, 1998).

de Vries, T.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

de Waardt, H.

Del Alamo, J. A.

B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron. 26, 113–122 (1990).
[CrossRef]

Dorren, H. J. S.

Dow, J. D.

J. D. Dow and D. Redfield, “Toward a unified theory of Urbach’s rule and exponential absorption edges,” Phys. Rev. B 5, 594–610 (1972).
[CrossRef]

Geluk, E.-J.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

Hill, M. T.

Huijskens, F. M.

Huybrechts, K.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

K. Huybrechts, G. Morthier, and R. Baet, “Fast all optical flipflop based on a single distributed feedback laser diode,” Opt. Express 16, 11405–11410 (2008).
[CrossRef]

Kaplan, A. M.

A. M. Kaplan, G. P. Agrawal, and D. N. Maywar, “All-optical flip-flop operation of VCSOA,” Electron. Lett. 45, 127–128 (2009).
[CrossRef]

Khoe, G. D.

Kumar, R.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

Liu, L.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

Liu, Y.

Maywar, D. N.

A. M. Kaplan, G. P. Agrawal, and D. N. Maywar, “All-optical flip-flop operation of VCSOA,” Electron. Lett. 45, 127–128 (2009).
[CrossRef]

Morthier, G.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

K. Huybrechts, G. Morthier, and R. Baet, “Fast all optical flipflop based on a single distributed feedback laser diode,” Opt. Express 16, 11405–11410 (2008).
[CrossRef]

Pankove, J. I.

J. I. Pankove, “Absorption edge of impure gallium arsenide,” Phys. Rev. 140, A2059–A2065 (1965).
[CrossRef]

Plumb, D.

J. Carrol, J. Whiteaway, and D. Plumb, Distributed Feedback Semiconductor Laser (IEE, 1998).

Redfield, D.

J. D. Dow and D. Redfield, “Toward a unified theory of Urbach’s rule and exponential absorption edges,” Phys. Rev. B 5, 594–610 (1972).
[CrossRef]

Regreny, P.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

Roelkens, G.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

Soref, R. A.

B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron. 26, 113–122 (1990).
[CrossRef]

Spuesens, T.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

Srivatsa, A.

Thourhout, D. V.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

Whiteaway, J.

J. Carrol, J. Whiteaway, and D. Plumb, Distributed Feedback Semiconductor Laser (IEE, 1998).

Zoweil, H.

Appl. Opt. (1)

Electron. Lett. (1)

A. M. Kaplan, G. P. Agrawal, and D. N. Maywar, “All-optical flip-flop operation of VCSOA,” Electron. Lett. 45, 127–128 (2009).
[CrossRef]

IEEE J. Quantum Electron. (2)

B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron. 26, 113–122 (1990).
[CrossRef]

M. T. Hill, H. de Waardt, G. D. Khoe, and H. J. S. Dorren, “All-optical flip-flop based on coupled laser diodes,” IEEE J. Quantum Electron. 37, 405–413 (2001).
[CrossRef]

J. Lightwave Technol. (1)

Nat. Photon. (1)

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. V. Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photon.182–187 (2010).
[CrossRef]

Opt. Express (1)

Phys. Rev. (1)

J. I. Pankove, “Absorption edge of impure gallium arsenide,” Phys. Rev. 140, A2059–A2065 (1965).
[CrossRef]

Phys. Rev. B (1)

J. D. Dow and D. Redfield, “Toward a unified theory of Urbach’s rule and exponential absorption edges,” Phys. Rev. B 5, 594–610 (1972).
[CrossRef]

Other (3)

J. Carrol, J. Whiteaway, and D. Plumb, Distributed Feedback Semiconductor Laser (IEE, 1998).

S. Adachi, Physical Properties of IIIV Semiconductor Compounds (Wiley, 2004).

H. Haug, ed., Optical Nonlinearities and Instabilities in Semiconductors (Academic, 1988).

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