Abstract

Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF4/O2 gas were injected to enhance the optical and electrical properties of the films. The extinction coefficient was lower than 1.5×103 in the range from 400 to 800nm when the CF4/O2 ratio was 0.375. The resistivity of fluorine-doped SnO2 films (1.63×103Ωcm) deposited at 300°C was 27.9 times smaller than that of undoped SnO2 (4.55×102Ωcm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2.68×104Ωcm, which increased by less than 39% at a 450°C annealing temperature for 1h in air.

© 2010 Optical Society of America

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