Abstract

We applied the laser interference lithography method to form a patterned sapphire substrate (PSS). A three-dimensional photonic crystal was formed by autocloning the PSS with alternate ${\mathrm{Ta}}_2{\mathrm{O}}_5/{\mathrm{SiO}}_2$ coatings. A high total integrated reflectance (TIR) band was obtained around the 410 to $470\mathrm{nm}$ wavelength range that matched the emission spectrum of the gallium nitride (GaN) light-emitting diode (LED) for application in manipulating the light extraction of the sapphire-based GaN LED.

© 2010 Optical Society of America

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