Abstract

An emissivity-invariant condition for a silicon wafer was determined by simulation modeling and it was confirmed experimentally. The p-polarized spectral emissivity at a wavelength of 900nm and at temperatures over 900K was constant at 0.83 at an angle of about 55.4° irrespective of large variations in the oxide layer thickness and the resistivity due to the different impurity doping concentrations of the silicon wafer. The expanded uncertainty, Uc=kuc (k=2), of the temperature measurement is estimated to be 4.9K. This result is expected to significantly enhance the accuracy of radiometric temperature measurements of silicon wafers in actual manufacturing processes.

© 2011 Optical Society of America

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