Abstract
An emissivity-invariant condition for a silicon wafer was determined by simulation modeling and it was confirmed experimentally. The p-polarized spectral emissivity at a wavelength of and at temperatures over was constant at 0.83 at an angle of about irrespective of large variations in the oxide layer thickness and the resistivity due to the different impurity doping concentrations of the silicon wafer. The expanded uncertainty, (), of the temperature measurement is estimated to be . This result is expected to significantly enhance the accuracy of radiometric temperature measurements of silicon wafers in actual manufacturing processes.
© 2011 Optical Society of America
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