Abstract

Transmission-type single-walled carbon nanotube saturable absorbers were successfully fabricated and used in a CW passively mode-locked Yb:Y2SiO5 laser for the first time to our knowledge. We obtained pulses as short as 1.1ps around a center wavelength of 1058nm. The average output power of 1.1W was achieved at the repetition of 96.7MHz; the corresponding peak power and energy of a single pulse was 10.3kW and 11.4nJ, respectively.

© 2011 Optical Society of America

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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  4. Y. X. Fan, J. L. He, Y. G. Wang, S. L. H. T. Wang, N. B. Ming, and X. Y. Ma, “2 ps passively mode-locked Nd:YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror,” Appl. Phys. Lett. 86, 101103 (2005).
    [CrossRef]
  5. J.-Y. Peng, J.-G. Miao, Y.-G. Wang, B.-S. Wang, H.-M. Tan, L.-S. Qian, and X.-Y. Ma, “High-average-power and high-conversion-efficiency continuous wave mode-locked Nd:YVO4laser with a semiconductor absorber mirror,” Opt. Laser Technol. 39, 1135–1139 (2007).
    [CrossRef]
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    [CrossRef]
  7. H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
    [CrossRef]
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    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef]
  11. S. Y. Set, H. Yaguchi, Y. Tanaka, and M. Jablonski, “Laser mode locking using a saturable absorber incorporating carbon nanotubes,” J. Lightwave Technol. 22, 51–56 (2004).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  17. L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
    [CrossRef]
  18. C. Hönninger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, “Q-switching stability limits of continuous-wave passive mode locking,” J. Opt. Soc. Am. B 16, 46–56 (1999).
    [CrossRef]

2010 (2)

L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
[CrossRef]

W. B. Cho, A. Schmidt, S. Y. Choi, V. Petrov, U. Griebner, G. Steinmeyer, S. Lee, D.-I. Yeom, and F. Rotermund, “Mode locking of a Cr:YAG laser with carbon nanotubes,” Opt. Lett. 35, 2669–2671 (2010).
[CrossRef] [PubMed]

2009 (3)

2008 (1)

P. Avouris, M. Freitag, and V. Perebeinos, “Carbon-nanotube photonics and optoelectronics,” Nat. Photon. 2, 341–350(2008).
[CrossRef]

2007 (2)

J.-Y. Peng, J.-G. Miao, Y.-G. Wang, B.-S. Wang, H.-M. Tan, L.-S. Qian, and X.-Y. Ma, “High-average-power and high-conversion-efficiency continuous wave mode-locked Nd:YVO4laser with a semiconductor absorber mirror,” Opt. Laser Technol. 39, 1135–1139 (2007).
[CrossRef]

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

2006 (1)

2005 (2)

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Y. X. Fan, J. L. He, Y. G. Wang, S. L. H. T. Wang, N. B. Ming, and X. Y. Ma, “2 ps passively mode-locked Nd:YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror,” Appl. Phys. Lett. 86, 101103 (2005).
[CrossRef]

2004 (2)

G. N. Ostojic, S. Zaric, and J. Kono, “Interband recombination dynamics in resonantly excited single-walled carbon nanotubes,” Phys. Rev. Lett. 92, 117402 (2004).
[CrossRef] [PubMed]

S. Y. Set, H. Yaguchi, Y. Tanaka, and M. Jablonski, “Laser mode locking using a saturable absorber incorporating carbon nanotubes,” J. Lightwave Technol. 22, 51–56 (2004).
[CrossRef]

2003 (1)

M. S. Arnold, J. E. Sharping, S. I. Stupp, P. Kumar, and M. C. Hersam, “Band gap photobleaching in isolated single-walled carbon nanotubes,” Nano Lett. 3, 1549–1554 (2003).
[CrossRef]

1999 (3)

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
[CrossRef]

H. Kataura, Y. Kumazawa, Y. Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, and Y. Achiba, “Optical properties of single-wall carbon nanotubes,” Synth. Met. 103, 2555–2558 (1999).
[CrossRef]

C. Hönninger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, “Q-switching stability limits of continuous-wave passive mode locking,” J. Opt. Soc. Am. B 16, 46–56 (1999).
[CrossRef]

1996 (1)

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

Achiba, Y.

H. Kataura, Y. Kumazawa, Y. Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, and Y. Achiba, “Optical properties of single-wall carbon nanotubes,” Synth. Met. 103, 2555–2558 (1999).
[CrossRef]

Arnold, M. S.

M. S. Arnold, J. E. Sharping, S. I. Stupp, P. Kumar, and M. C. Hersam, “Band gap photobleaching in isolated single-walled carbon nanotubes,” Nano Lett. 3, 1549–1554 (2003).
[CrossRef]

Ausder Au, J.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

Avouris, P.

P. Avouris, M. Freitag, and V. Perebeinos, “Carbon-nanotube photonics and optoelectronics,” Nat. Photon. 2, 341–350(2008).
[CrossRef]

Balembois, F.

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Braun, B.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

Bukin, V. V.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Chengcheng, L.

L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
[CrossRef]

Chernov, A. I.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Cho, W. B.

Choi, S. Y.

Cockayne, D. J. H.

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
[CrossRef]

Druon, F.

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Fan, Y. X.

Y. X. Fan, J. L. He, Y. G. Wang, S. L. H. T. Wang, N. B. Ming, and X. Y. Ma, “2 ps passively mode-locked Nd:YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror,” Appl. Phys. Lett. 86, 101103 (2005).
[CrossRef]

Ferrand, B.

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Fluck, R.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

Freitag, M.

P. Avouris, M. Freitag, and V. Perebeinos, “Carbon-nanotube photonics and optoelectronics,” Nat. Photon. 2, 341–350(2008).
[CrossRef]

Garnov, S. V.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Georges, P.

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Griebner, U.

Haiml, M.

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
[CrossRef]

Hao, Q.

W. Li, Q. Hao, Q. Yang, and H. Zeng, “Diode-pumped passively mode-locked Yb3+-doped yttrium lanthanum oxide ceramic laser,” Laser Phys. Lett. 6, 559–562 (2009).
[CrossRef]

He, J. L.

Y. X. Fan, J. L. He, Y. G. Wang, S. L. H. T. Wang, N. B. Ming, and X. Y. Ma, “2 ps passively mode-locked Nd:YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror,” Appl. Phys. Lett. 86, 101103 (2005).
[CrossRef]

Hersam, M. C.

M. S. Arnold, J. E. Sharping, S. I. Stupp, P. Kumar, and M. C. Hersam, “Band gap photobleaching in isolated single-walled carbon nanotubes,” Nano Lett. 3, 1549–1554 (2003).
[CrossRef]

Hönninger, C.

C. Hönninger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, “Q-switching stability limits of continuous-wave passive mode locking,” J. Opt. Soc. Am. B 16, 46–56 (1999).
[CrossRef]

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

Jablonski, M.

Jacqueme, C.

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Jacqueme, M.

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Jagadish, C.

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
[CrossRef]

Janel, N.

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Jie, L.

L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
[CrossRef]

Jun, X.

L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
[CrossRef]

Jung, I. D.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

Kärtner, F. X.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

Kataura, H.

H. Kataura, Y. Kumazawa, Y. Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, and Y. Achiba, “Optical properties of single-wall carbon nanotubes,” Synth. Met. 103, 2555–2558 (1999).
[CrossRef]

Keller, U.

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
[CrossRef]

C. Hönninger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, “Q-switching stability limits of continuous-wave passive mode locking,” J. Opt. Soc. Am. B 16, 46–56 (1999).
[CrossRef]

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

Kono, J.

G. N. Ostojic, S. Zaric, and J. Kono, “Interband recombination dynamics in resonantly excited single-walled carbon nanotubes,” Phys. Rev. Lett. 92, 117402 (2004).
[CrossRef] [PubMed]

Kopf, D.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

Kumar, P.

M. S. Arnold, J. E. Sharping, S. I. Stupp, P. Kumar, and M. C. Hersam, “Band gap photobleaching in isolated single-walled carbon nanotubes,” Nano Lett. 3, 1549–1554 (2003).
[CrossRef]

Kumazawa, Y.

H. Kataura, Y. Kumazawa, Y. Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, and Y. Achiba, “Optical properties of single-wall carbon nanotubes,” Synth. Met. 103, 2555–2558 (1999).
[CrossRef]

Kutovoi, S. A.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Lederer, M. J.

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
[CrossRef]

Lee, S.

Li, W.

W. Li, Q. Hao, Q. Yang, and H. Zeng, “Diode-pumped passively mode-locked Yb3+-doped yttrium lanthanum oxide ceramic laser,” Laser Phys. Lett. 6, 559–562 (2009).
[CrossRef]

Liangbi, S.

L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
[CrossRef]

Lihe, Z.

L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
[CrossRef]

Lobach, A. S.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Luther-Davies, B.

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
[CrossRef]

Ma, X. Y.

Y. X. Fan, J. L. He, Y. G. Wang, S. L. H. T. Wang, N. B. Ming, and X. Y. Ma, “2 ps passively mode-locked Nd:YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror,” Appl. Phys. Lett. 86, 101103 (2005).
[CrossRef]

Ma, X.-Y.

J.-Y. Peng, J.-G. Miao, Y.-G. Wang, B.-S. Wang, H.-M. Tan, L.-S. Qian, and X.-Y. Ma, “High-average-power and high-conversion-efficiency continuous wave mode-locked Nd:YVO4laser with a semiconductor absorber mirror,” Opt. Laser Technol. 39, 1135–1139 (2007).
[CrossRef]

Maniwa, Y.

H. Kataura, Y. Kumazawa, Y. Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, and Y. Achiba, “Optical properties of single-wall carbon nanotubes,” Synth. Met. 103, 2555–2558 (1999).
[CrossRef]

Matuschek, N.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

Miao, J.-G.

J.-Y. Peng, J.-G. Miao, Y.-G. Wang, B.-S. Wang, H.-M. Tan, L.-S. Qian, and X.-Y. Ma, “High-average-power and high-conversion-efficiency continuous wave mode-locked Nd:YVO4laser with a semiconductor absorber mirror,” Opt. Laser Technol. 39, 1135–1139 (2007).
[CrossRef]

Ming, N. B.

Y. X. Fan, J. L. He, Y. G. Wang, S. L. H. T. Wang, N. B. Ming, and X. Y. Ma, “2 ps passively mode-locked Nd:YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror,” Appl. Phys. Lett. 86, 101103 (2005).
[CrossRef]

Morier-Genoud, F.

Moser, M.

Obraztsov, P. A.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Obraztsova, E. D.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Ohtsuka, Y.

H. Kataura, Y. Kumazawa, Y. Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, and Y. Achiba, “Optical properties of single-wall carbon nanotubes,” Synth. Met. 103, 2555–2558 (1999).
[CrossRef]

Ostojic, G. N.

G. N. Ostojic, S. Zaric, and J. Kono, “Interband recombination dynamics in resonantly excited single-walled carbon nanotubes,” Phys. Rev. Lett. 92, 117402 (2004).
[CrossRef] [PubMed]

Paschotta, R.

Pelenc, D.

Peng, J.-Y.

J.-Y. Peng, J.-G. Miao, Y.-G. Wang, B.-S. Wang, H.-M. Tan, L.-S. Qian, and X.-Y. Ma, “High-average-power and high-conversion-efficiency continuous wave mode-locked Nd:YVO4laser with a semiconductor absorber mirror,” Opt. Laser Technol. 39, 1135–1139 (2007).
[CrossRef]

Perebeinos, V.

P. Avouris, M. Freitag, and V. Perebeinos, “Carbon-nanotube photonics and optoelectronics,” Nat. Photon. 2, 341–350(2008).
[CrossRef]

Petit, J.

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Petrov, V.

Qian, L.-S.

J.-Y. Peng, J.-G. Miao, Y.-G. Wang, B.-S. Wang, H.-M. Tan, L.-S. Qian, and X.-Y. Ma, “High-average-power and high-conversion-efficiency continuous wave mode-locked Nd:YVO4laser with a semiconductor absorber mirror,” Opt. Laser Technol. 39, 1135–1139 (2007).
[CrossRef]

Rivier, S.

Ronglian, N.

L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
[CrossRef]

Rotermund, F.

Rytz, D.

Schmidt, A.

Set, S. Y.

Sharping, J. E.

M. S. Arnold, J. E. Sharping, S. I. Stupp, P. Kumar, and M. C. Hersam, “Band gap photobleaching in isolated single-walled carbon nanotubes,” Nano Lett. 3, 1549–1554 (2003).
[CrossRef]

Shcherbakov, I. A.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Siegner, U.

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
[CrossRef]

Sirotkin, A. A.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Solokhin, S. A.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Steinmeyer, G.

Stupp, S. I.

M. S. Arnold, J. E. Sharping, S. I. Stupp, P. Kumar, and M. C. Hersam, “Band gap photobleaching in isolated single-walled carbon nanotubes,” Nano Lett. 3, 1549–1554 (2003).
[CrossRef]

Su, L.

Suzuki, S.

H. Kataura, Y. Kumazawa, Y. Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, and Y. Achiba, “Optical properties of single-wall carbon nanotubes,” Synth. Met. 103, 2555–2558 (1999).
[CrossRef]

Tan, H. H.

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
[CrossRef]

Tan, H.-M.

J.-Y. Peng, J.-G. Miao, Y.-G. Wang, B.-S. Wang, H.-M. Tan, L.-S. Qian, and X.-Y. Ma, “High-average-power and high-conversion-efficiency continuous wave mode-locked Nd:YVO4laser with a semiconductor absorber mirror,” Opt. Laser Technol. 39, 1135–1139 (2007).
[CrossRef]

Tanaka, Y.

Teng, H.

Thibault, F.

Umezu, I.

H. Kataura, Y. Kumazawa, Y. Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, and Y. Achiba, “Optical properties of single-wall carbon nanotubes,” Synth. Met. 103, 2555–2558 (1999).
[CrossRef]

Viana, B.

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Vivien, D.

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Wang, B.-S.

J.-Y. Peng, J.-G. Miao, Y.-G. Wang, B.-S. Wang, H.-M. Tan, L.-S. Qian, and X.-Y. Ma, “High-average-power and high-conversion-efficiency continuous wave mode-locked Nd:YVO4laser with a semiconductor absorber mirror,” Opt. Laser Technol. 39, 1135–1139 (2007).
[CrossRef]

Wang, S. L. H. T.

Y. X. Fan, J. L. He, Y. G. Wang, S. L. H. T. Wang, N. B. Ming, and X. Y. Ma, “2 ps passively mode-locked Nd:YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror,” Appl. Phys. Lett. 86, 101103 (2005).
[CrossRef]

Wang, Y. G.

Y. X. Fan, J. L. He, Y. G. Wang, S. L. H. T. Wang, N. B. Ming, and X. Y. Ma, “2 ps passively mode-locked Nd:YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror,” Appl. Phys. Lett. 86, 101103 (2005).
[CrossRef]

Wang, Y.-G.

J.-Y. Peng, J.-G. Miao, Y.-G. Wang, B.-S. Wang, H.-M. Tan, L.-S. Qian, and X.-Y. Ma, “High-average-power and high-conversion-efficiency continuous wave mode-locked Nd:YVO4laser with a semiconductor absorber mirror,” Opt. Laser Technol. 39, 1135–1139 (2007).
[CrossRef]

Wei, Z.

Weingarten, K. J.

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

Weiwei, W.

L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
[CrossRef]

Xu, J.

Yaguchi, H.

Yang, Q.

W. Li, Q. Hao, Q. Yang, and H. Zeng, “Diode-pumped passively mode-locked Yb3+-doped yttrium lanthanum oxide ceramic laser,” Laser Phys. Lett. 6, 559–562 (2009).
[CrossRef]

Yeom, D.-I.

Yim, J. H.

Ying, L.

L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
[CrossRef]

Yuefeng, Z.

L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
[CrossRef]

Zagumennyi, Y. D.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Zaric, S.

G. N. Ostojic, S. Zaric, and J. Kono, “Interband recombination dynamics in resonantly excited single-walled carbon nanotubes,” Phys. Rev. Lett. 92, 117402 (2004).
[CrossRef] [PubMed]

Zavartsev, Y. D.

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Zeng, H.

W. Li, Q. Hao, Q. Yang, and H. Zeng, “Diode-pumped passively mode-locked Yb3+-doped yttrium lanthanum oxide ceramic laser,” Laser Phys. Lett. 6, 559–562 (2009).
[CrossRef]

Zhang, Y.

Zheng, L.

Zhong, X.

Zhou, B.

Zou, J.

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
[CrossRef]

Appl. Phys. B (1)

M. Jacqueme, C. Jacqueme, N. Janel, F. Druon, F. Balembois, P. Georges, J. Petit, B. Viana, D. Vivien, and B. Ferrand, “Efficient laser action of Yb:LSO and Yb:YSO oxyorthosilicates crystals under high-power diode-pumping,” Appl. Phys. B 80, 171–176 (2005).
[CrossRef]

Appl. Phys. Lett. (2)

Y. X. Fan, J. L. He, Y. G. Wang, S. L. H. T. Wang, N. B. Ming, and X. Y. Ma, “2 ps passively mode-locked Nd:YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror,” Appl. Phys. Lett. 86, 101103 (2005).
[CrossRef]

H. H. Tan, C. Jagadish, M. J. Lederer, B. Luther-Davies, J. Zou, D. J. H. Cockayne, M. Haiml, U. Siegner, and U. Keller, “Role of implantation-induced defects on the response time of semiconductor saturable absorbers,” Appl. Phys. Lett. 75, 1437–1439(1999).
[CrossRef]

Chin. J. Lasers (1)

L. Chengcheng, L. Jie, Z. Yuefeng, W. Weiwei, L. Ying, N. Ronglian, Z. Lihe, S. Liangbi, and X. Jun, “Characterization of laser diode-pumped passively mode-locked Yb:YSO laser,” Chin. J. Lasers 37, 2380–2383 (2010).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Ausder Au, “Semiconductor saturable absorber mirrors (SESAM’s) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron. 2, 435–453 (1996).
[CrossRef]

J. Lightwave Technol. (1)

J. Opt. Soc. Am. B (1)

Laser Phys. Lett. (2)

W. Li, Q. Hao, Q. Yang, and H. Zeng, “Diode-pumped passively mode-locked Yb3+-doped yttrium lanthanum oxide ceramic laser,” Laser Phys. Lett. 6, 559–562 (2009).
[CrossRef]

S. V. Garnov, S. A. Solokhin, E. D. Obraztsova, A. S. Lobach, P. A. Obraztsov, A. I. Chernov, V. V. Bukin, A. A. Sirotkin, Y. D. Zagumennyi, Y. D. Zavartsev, S. A. Kutovoi, and I. A. Shcherbakov, “Passive mode-locking with carbon nanotube saturable absorber in Nd:GdVO4 and Nd:Y0.9Gd0.1VO4 lasers operating at 1.34 μm,” Laser Phys. Lett. 4, 648–651 (2007).
[CrossRef]

Nano Lett. (1)

M. S. Arnold, J. E. Sharping, S. I. Stupp, P. Kumar, and M. C. Hersam, “Band gap photobleaching in isolated single-walled carbon nanotubes,” Nano Lett. 3, 1549–1554 (2003).
[CrossRef]

Nat. Photon. (1)

P. Avouris, M. Freitag, and V. Perebeinos, “Carbon-nanotube photonics and optoelectronics,” Nat. Photon. 2, 341–350(2008).
[CrossRef]

Opt. Express (1)

Opt. Laser Technol. (1)

J.-Y. Peng, J.-G. Miao, Y.-G. Wang, B.-S. Wang, H.-M. Tan, L.-S. Qian, and X.-Y. Ma, “High-average-power and high-conversion-efficiency continuous wave mode-locked Nd:YVO4laser with a semiconductor absorber mirror,” Opt. Laser Technol. 39, 1135–1139 (2007).
[CrossRef]

Opt. Lett. (3)

Phys. Rev. Lett. (1)

G. N. Ostojic, S. Zaric, and J. Kono, “Interband recombination dynamics in resonantly excited single-walled carbon nanotubes,” Phys. Rev. Lett. 92, 117402 (2004).
[CrossRef] [PubMed]

Synth. Met. (1)

H. Kataura, Y. Kumazawa, Y. Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, and Y. Achiba, “Optical properties of single-wall carbon nanotubes,” Synth. Met. 103, 2555–2558 (1999).
[CrossRef]

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Figures (6)

Fig. 1
Fig. 1

Optical transmission of the SWCNT absorber.

Fig. 2
Fig. 2

Nonlinear transmission as a function of the pump intensity and the modulated probe signal of the SWCNT plotted as a function of the time delay.

Fig. 3
Fig. 3

Experimental setup for passively mode-locked Yb:YSO laser.

Fig. 4
Fig. 4

Variation of the output power with the absorbed pump power. The red line is linear fit.

Fig. 5
Fig. 5

Pulse train of the CW mode-locked pulse laser recorded in 1 μs and 10 ns per division time scale ( P absorbed = 9.8 W ).

Fig. 6
Fig. 6

(a) Autocorrelation traces. The circles in the figure are experimental data and the red curve in the autocorrelation trace is sech 2 -fit. (b) Corresponding optical spectrum.

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