Abstract

A femtosecond-laser-textured Si photodetector is reported. Broadband spectral optical response is detected from UV to NIR. A quantum efficiency of greater than 80% from 490nm to 780nm has been achieved. The quantum efficiency at 245nm is 62%, which is comparable to UV-enhanced Si photodiodes. The bandwidth of a 250-μm-diameter device is 60MHz.

© 2011 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. D. J. Frank, Y. Taur, and H.-S. Philip Wong, in 57th Annual Device Research Conference Digest (IEEE, 1999), pp. 18–21.
    [Crossref]
  2. T. H. Ning, in IEEE Region 10 International Conf. on Microelectronics and VLSI, Asia-Pacific Microelectronics 2000 (IEEE, 1995), pp. 1–4.
    [Crossref]
  3. I. Khodami, F. Taghibakhsh, and K. S. Karim, IEEE Electron Device Lett. 29, 1007–1008 (2008).
    [Crossref]
  4. A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
    [Crossref]
  5. P. Mandracci, M. L. Rastello, P. Rava, F. Giuliani, and F. Giorgis, “Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector,” Thin Solid Films 337, 232–234 (1999).
    [Crossref]
  6. C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W. S. Ho, and C. W. Liu, “Broadband SiGe/Si quantum dot IR photodetectors,” J. Appl. Phys. 101, 033117 (2007).
    [Crossref]
  7. J. Zhao, A. Wang, P. Campbell, and M. A. Green, “22.7% efficient silicon photovoltaic modules with textured front surface,” IEEE Trans. Electron Devices 46, 1495–1497(1999).
    [Crossref]
  8. M.A. Green, “The path to 25% silicon solar cell efficiency: history of silicon cell evolution,” Prog. Photovoltaics 17, 183–189 (2009).
    [Crossref]
  9. E. Manea, E. Budianu, M. Purica, D. Cristea, I. Cernica, R. Muller, V. Moagar Poladian, “Optimization of front surface texturing processes for high-efficiency silicon solar cells,” Solar Energy Mater. Sol. Cells 87, 423–431 (2005).
    [Crossref]
  10. E. Yablonovitch and G. D. Cody, “Intensity enhancement in textured optical sheets for solar cells,” IEEE Trans. Electron Devices 29, 300–305 (1982).
    [Crossref]
  11. Z. Huang, J. E. Carey, M. Liu, X. Guo, E. Mazur, and J. C. Campbell, “Microstructured silicon photodetector,” Appl. Phys. Lett. 89, 033506 (2006).
    [Crossref]
  12. K. Yamamoto, A. Sakamoto, T. Nagano, and K. Fukumitsu, “NIR sensitivity enhancement by laser treatment for Si detectors,” Nucl. Instr. and Meth. A, Nucl. Instrum. Methods. Phys. Res. A 624, 520–523 (2010).
    [Crossref]
  13. M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
    [Crossref]
  14. B. K. Nayak, V. V. Iyengar, and M. C. Gupta, “Efficient light trapping in silicon solar cells by ultrafast-laser-induced self-assembled micro/nano structures,” Prog. Photovoltaics (to be published).
  15. S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors—Numerical Data and Graphical Information (Kluwer, 1999).
    [Crossref] [PubMed]

2010 (1)

K. Yamamoto, A. Sakamoto, T. Nagano, and K. Fukumitsu, “NIR sensitivity enhancement by laser treatment for Si detectors,” Nucl. Instr. and Meth. A, Nucl. Instrum. Methods. Phys. Res. A 624, 520–523 (2010).
[Crossref]

2009 (1)

M.A. Green, “The path to 25% silicon solar cell efficiency: history of silicon cell evolution,” Prog. Photovoltaics 17, 183–189 (2009).
[Crossref]

2008 (1)

I. Khodami, F. Taghibakhsh, and K. S. Karim, IEEE Electron Device Lett. 29, 1007–1008 (2008).
[Crossref]

2007 (1)

C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W. S. Ho, and C. W. Liu, “Broadband SiGe/Si quantum dot IR photodetectors,” J. Appl. Phys. 101, 033117 (2007).
[Crossref]

2006 (1)

Z. Huang, J. E. Carey, M. Liu, X. Guo, E. Mazur, and J. C. Campbell, “Microstructured silicon photodetector,” Appl. Phys. Lett. 89, 033506 (2006).
[Crossref]

2005 (1)

E. Manea, E. Budianu, M. Purica, D. Cristea, I. Cernica, R. Muller, V. Moagar Poladian, “Optimization of front surface texturing processes for high-efficiency silicon solar cells,” Solar Energy Mater. Sol. Cells 87, 423–431 (2005).
[Crossref]

1999 (3)

P. Mandracci, M. L. Rastello, P. Rava, F. Giuliani, and F. Giorgis, “Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector,” Thin Solid Films 337, 232–234 (1999).
[Crossref]

J. Zhao, A. Wang, P. Campbell, and M. A. Green, “22.7% efficient silicon photovoltaic modules with textured front surface,” IEEE Trans. Electron Devices 46, 1495–1497(1999).
[Crossref]

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

1998 (1)

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

1982 (1)

E. Yablonovitch and G. D. Cody, “Intensity enhancement in textured optical sheets for solar cells,” IEEE Trans. Electron Devices 29, 300–305 (1982).
[Crossref]

Adachi, S.

S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors—Numerical Data and Graphical Information (Kluwer, 1999).
[Crossref] [PubMed]

Bearda, T.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Budianu, E.

E. Manea, E. Budianu, M. Purica, D. Cristea, I. Cernica, R. Muller, V. Moagar Poladian, “Optimization of front surface texturing processes for high-efficiency silicon solar cells,” Solar Energy Mater. Sol. Cells 87, 423–431 (2005).
[Crossref]

Campbell, J. C.

Z. Huang, J. E. Carey, M. Liu, X. Guo, E. Mazur, and J. C. Campbell, “Microstructured silicon photodetector,” Appl. Phys. Lett. 89, 033506 (2006).
[Crossref]

Campbell, P.

J. Zhao, A. Wang, P. Campbell, and M. A. Green, “22.7% efficient silicon photovoltaic modules with textured front surface,” IEEE Trans. Electron Devices 46, 1495–1497(1999).
[Crossref]

Carey, J. E.

Z. Huang, J. E. Carey, M. Liu, X. Guo, E. Mazur, and J. C. Campbell, “Microstructured silicon photodetector,” Appl. Phys. Lett. 89, 033506 (2006).
[Crossref]

Cernica, I.

E. Manea, E. Budianu, M. Purica, D. Cristea, I. Cernica, R. Muller, V. Moagar Poladian, “Optimization of front surface texturing processes for high-efficiency silicon solar cells,” Solar Energy Mater. Sol. Cells 87, 423–431 (2005).
[Crossref]

Chang, Y. C.

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

Cody, G. D.

E. Yablonovitch and G. D. Cody, “Intensity enhancement in textured optical sheets for solar cells,” IEEE Trans. Electron Devices 29, 300–305 (1982).
[Crossref]

Cornelissen, I.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Cristea, D.

E. Manea, E. Budianu, M. Purica, D. Cristea, I. Cernica, R. Muller, V. Moagar Poladian, “Optimization of front surface texturing processes for high-efficiency silicon solar cells,” Solar Energy Mater. Sol. Cells 87, 423–431 (2005).
[Crossref]

Degraeve, R.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Frank, D. J.

D. J. Frank, Y. Taur, and H.-S. Philip Wong, in 57th Annual Device Research Conference Digest (IEEE, 1999), pp. 18–21.
[Crossref]

Fukumitsu, K.

K. Yamamoto, A. Sakamoto, T. Nagano, and K. Fukumitsu, “NIR sensitivity enhancement by laser treatment for Si detectors,” Nucl. Instr. and Meth. A, Nucl. Instrum. Methods. Phys. Res. A 624, 520–523 (2010).
[Crossref]

Gangopadhyay, S.

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

Gaska, R.

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

Gendt, S. De

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Giorgis, F.

P. Mandracci, M. L. Rastello, P. Rava, F. Giuliani, and F. Giorgis, “Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector,” Thin Solid Films 337, 232–234 (1999).
[Crossref]

Giuliani, F.

P. Mandracci, M. L. Rastello, P. Rava, F. Giuliani, and F. Giorgis, “Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector,” Thin Solid Films 337, 232–234 (1999).
[Crossref]

Green, A.

M.A. Green, “The path to 25% silicon solar cell efficiency: history of silicon cell evolution,” Prog. Photovoltaics 17, 183–189 (2009).
[Crossref]

Green, M. A.

J. Zhao, A. Wang, P. Campbell, and M. A. Green, “22.7% efficient silicon photovoltaic modules with textured front surface,” IEEE Trans. Electron Devices 46, 1495–1497(1999).
[Crossref]

Groeseneken, G.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Guo, X.

Z. Huang, J. E. Carey, M. Liu, X. Guo, E. Mazur, and J. C. Campbell, “Microstructured silicon photodetector,” Appl. Phys. Lett. 89, 033506 (2006).
[Crossref]

Gupta, M. C.

B. K. Nayak, V. V. Iyengar, and M. C. Gupta, “Efficient light trapping in silicon solar cells by ultrafast-laser-induced self-assembled micro/nano structures,” Prog. Photovoltaics (to be published).

Heyns, M. M.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Ho, W. S.

C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W. S. Ho, and C. W. Liu, “Broadband SiGe/Si quantum dot IR photodetectors,” J. Appl. Phys. 101, 033117 (2007).
[Crossref]

Huang, Z.

Z. Huang, J. E. Carey, M. Liu, X. Guo, E. Mazur, and J. C. Campbell, “Microstructured silicon photodetector,” Appl. Phys. Lett. 89, 033506 (2006).
[Crossref]

Iyengar, V. V.

B. K. Nayak, V. V. Iyengar, and M. C. Gupta, “Efficient light trapping in silicon solar cells by ultrafast-laser-induced self-assembled micro/nano structures,” Prog. Photovoltaics (to be published).

Karim, K. S.

I. Khodami, F. Taghibakhsh, and K. S. Karim, IEEE Electron Device Lett. 29, 1007–1008 (2008).
[Crossref]

Kenens, C.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Khodami, I.

I. Khodami, F. Taghibakhsh, and K. S. Karim, IEEE Electron Device Lett. 29, 1007–1008 (2008).
[Crossref]

Knotter, D. M.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Kolbas, R. M.

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

Kuksenkov, D.

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

Lin, C.-H.

C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W. S. Ho, and C. W. Liu, “Broadband SiGe/Si quantum dot IR photodetectors,” J. Appl. Phys. 101, 033117 (2007).
[Crossref]

Liu, C. W.

C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W. S. Ho, and C. W. Liu, “Broadband SiGe/Si quantum dot IR photodetectors,” J. Appl. Phys. 101, 033117 (2007).
[Crossref]

Liu, M.

Z. Huang, J. E. Carey, M. Liu, X. Guo, E. Mazur, and J. C. Campbell, “Microstructured silicon photodetector,” Appl. Phys. Lett. 89, 033506 (2006).
[Crossref]

Loewenstein, L. M.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Mandracci, P.

P. Mandracci, M. L. Rastello, P. Rava, F. Giuliani, and F. Giorgis, “Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector,” Thin Solid Films 337, 232–234 (1999).
[Crossref]

Manea, E.

E. Manea, E. Budianu, M. Purica, D. Cristea, I. Cernica, R. Muller, V. Moagar Poladian, “Optimization of front surface texturing processes for high-efficiency silicon solar cells,” Solar Energy Mater. Sol. Cells 87, 423–431 (2005).
[Crossref]

Mazur, E.

Z. Huang, J. E. Carey, M. Liu, X. Guo, E. Mazur, and J. C. Campbell, “Microstructured silicon photodetector,” Appl. Phys. Lett. 89, 033506 (2006).
[Crossref]

Mertens, P.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Mertens, S.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Meuris, M.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Muller, R.

E. Manea, E. Budianu, M. Purica, D. Cristea, I. Cernica, R. Muller, V. Moagar Poladian, “Optimization of front surface texturing processes for high-efficiency silicon solar cells,” Solar Energy Mater. Sol. Cells 87, 423–431 (2005).
[Crossref]

Muth, J. F.

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

Nagano, T.

K. Yamamoto, A. Sakamoto, T. Nagano, and K. Fukumitsu, “NIR sensitivity enhancement by laser treatment for Si detectors,” Nucl. Instr. and Meth. A, Nucl. Instrum. Methods. Phys. Res. A 624, 520–523 (2010).
[Crossref]

Nayak, B. K.

B. K. Nayak, V. V. Iyengar, and M. C. Gupta, “Efficient light trapping in silicon solar cells by ultrafast-laser-induced self-assembled micro/nano structures,” Prog. Photovoltaics (to be published).

Nigam, T.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Ning, T. H.

T. H. Ning, in IEEE Region 10 International Conf. on Microelectronics and VLSI, Asia-Pacific Microelectronics 2000 (IEEE, 1995), pp. 1–4.
[Crossref]

Osinsky, A.

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

Peng, C.-Y.

C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W. S. Ho, and C. W. Liu, “Broadband SiGe/Si quantum dot IR photodetectors,” J. Appl. Phys. 101, 033117 (2007).
[Crossref]

Poladian, V. Moagar

E. Manea, E. Budianu, M. Purica, D. Cristea, I. Cernica, R. Muller, V. Moagar Poladian, “Optimization of front surface texturing processes for high-efficiency silicon solar cells,” Solar Energy Mater. Sol. Cells 87, 423–431 (2005).
[Crossref]

Purica, M.

E. Manea, E. Budianu, M. Purica, D. Cristea, I. Cernica, R. Muller, V. Moagar Poladian, “Optimization of front surface texturing processes for high-efficiency silicon solar cells,” Solar Energy Mater. Sol. Cells 87, 423–431 (2005).
[Crossref]

Rastello, M. L.

P. Mandracci, M. L. Rastello, P. Rava, F. Giuliani, and F. Giorgis, “Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector,” Thin Solid Films 337, 232–234 (1999).
[Crossref]

Rava, P.

P. Mandracci, M. L. Rastello, P. Rava, F. Giuliani, and F. Giorgis, “Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector,” Thin Solid Films 337, 232–234 (1999).
[Crossref]

Sakamoto, A.

K. Yamamoto, A. Sakamoto, T. Nagano, and K. Fukumitsu, “NIR sensitivity enhancement by laser treatment for Si detectors,” Nucl. Instr. and Meth. A, Nucl. Instrum. Methods. Phys. Res. A 624, 520–523 (2010).
[Crossref]

Schaekers, M.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Shmagin, I. K.

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

Taghibakhsh, F.

I. Khodami, F. Taghibakhsh, and K. S. Karim, IEEE Electron Device Lett. 29, 1007–1008 (2008).
[Crossref]

Taur, Y.

D. J. Frank, Y. Taur, and H.-S. Philip Wong, in 57th Annual Device Research Conference Digest (IEEE, 1999), pp. 18–21.
[Crossref]

Teerlinck, I.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Temkin, H.

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

Vandervorst, W.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Vos, R.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Wang, A.

J. Zhao, A. Wang, P. Campbell, and M. A. Green, “22.7% efficient silicon photovoltaic modules with textured front surface,” IEEE Trans. Electron Devices 46, 1495–1497(1999).
[Crossref]

Wolke, K.

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

Wong, H.-S. Philip

D. J. Frank, Y. Taur, and H.-S. Philip Wong, in 57th Annual Device Research Conference Digest (IEEE, 1999), pp. 18–21.
[Crossref]

Yablonovitch, E.

E. Yablonovitch and G. D. Cody, “Intensity enhancement in textured optical sheets for solar cells,” IEEE Trans. Electron Devices 29, 300–305 (1982).
[Crossref]

Yamamoto, K.

K. Yamamoto, A. Sakamoto, T. Nagano, and K. Fukumitsu, “NIR sensitivity enhancement by laser treatment for Si detectors,” Nucl. Instr. and Meth. A, Nucl. Instrum. Methods. Phys. Res. A 624, 520–523 (2010).
[Crossref]

Yang, J. W.

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

Yu, C.-Y.

C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W. S. Ho, and C. W. Liu, “Broadband SiGe/Si quantum dot IR photodetectors,” J. Appl. Phys. 101, 033117 (2007).
[Crossref]

Zhao, J.

J. Zhao, A. Wang, P. Campbell, and M. A. Green, “22.7% efficient silicon photovoltaic modules with textured front surface,” IEEE Trans. Electron Devices 46, 1495–1497(1999).
[Crossref]

Appl. Phys. Lett. (2)

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov, H. Temkin, I. K. Shmagin, Y. C. Chang, J. F. Muth, and R. M. Kolbas, “Visible-blind GaN Schottky barrier detectors grown on Si (111),” Appl. Phys. Lett. 72, 551–553 (1998).
[Crossref]

Z. Huang, J. E. Carey, M. Liu, X. Guo, E. Mazur, and J. C. Campbell, “Microstructured silicon photodetector,” Appl. Phys. Lett. 89, 033506 (2006).
[Crossref]

IBM J. Res. Dev. (1)

M. M. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, R. Degraeve, G. Groeseneken, C. Kenens, D. M. Knotter, L. M. Loewenstein, P. Mertens, S. Mertens, M. Meuris, T. Nigam, M. Schaekers, I. Teerlinck, W. Vandervorst, R. Vos, and K. Wolke, “Cost-effective cleaning and high quality thin gate oxides,” IBM J. Res. Dev. 43, 339 (1999).
[Crossref]

IEEE Electron Device Lett. (1)

I. Khodami, F. Taghibakhsh, and K. S. Karim, IEEE Electron Device Lett. 29, 1007–1008 (2008).
[Crossref]

IEEE Trans. Electron Devices (2)

J. Zhao, A. Wang, P. Campbell, and M. A. Green, “22.7% efficient silicon photovoltaic modules with textured front surface,” IEEE Trans. Electron Devices 46, 1495–1497(1999).
[Crossref]

E. Yablonovitch and G. D. Cody, “Intensity enhancement in textured optical sheets for solar cells,” IEEE Trans. Electron Devices 29, 300–305 (1982).
[Crossref]

J. Appl. Phys. (1)

C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W. S. Ho, and C. W. Liu, “Broadband SiGe/Si quantum dot IR photodetectors,” J. Appl. Phys. 101, 033117 (2007).
[Crossref]

Nucl. Instr. and Meth. A, Nucl. Instrum. Methods. Phys. Res. A (1)

K. Yamamoto, A. Sakamoto, T. Nagano, and K. Fukumitsu, “NIR sensitivity enhancement by laser treatment for Si detectors,” Nucl. Instr. and Meth. A, Nucl. Instrum. Methods. Phys. Res. A 624, 520–523 (2010).
[Crossref]

Prog. Photovoltaics (2)

B. K. Nayak, V. V. Iyengar, and M. C. Gupta, “Efficient light trapping in silicon solar cells by ultrafast-laser-induced self-assembled micro/nano structures,” Prog. Photovoltaics (to be published).

M.A. Green, “The path to 25% silicon solar cell efficiency: history of silicon cell evolution,” Prog. Photovoltaics 17, 183–189 (2009).
[Crossref]

Solar Energy Mater. Sol. Cells (1)

E. Manea, E. Budianu, M. Purica, D. Cristea, I. Cernica, R. Muller, V. Moagar Poladian, “Optimization of front surface texturing processes for high-efficiency silicon solar cells,” Solar Energy Mater. Sol. Cells 87, 423–431 (2005).
[Crossref]

Thin Solid Films (1)

P. Mandracci, M. L. Rastello, P. Rava, F. Giuliani, and F. Giorgis, “Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector,” Thin Solid Films 337, 232–234 (1999).
[Crossref]

Other (3)

D. J. Frank, Y. Taur, and H.-S. Philip Wong, in 57th Annual Device Research Conference Digest (IEEE, 1999), pp. 18–21.
[Crossref]

T. H. Ning, in IEEE Region 10 International Conf. on Microelectronics and VLSI, Asia-Pacific Microelectronics 2000 (IEEE, 1995), pp. 1–4.
[Crossref]

S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors—Numerical Data and Graphical Information (Kluwer, 1999).
[Crossref] [PubMed]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1

SEM images of (a) as-laser-textured surface; (b) surface after chemical etching and passivation; (c) photodetector fabricated on laser-textured surface.

Fig. 2
Fig. 2

Dark current versus voltage characteristic for the 250 - μm -diameter textured Si photodetector.

Fig. 3
Fig. 3

External quantum efficiency of textured Si photodetector and two commercial (UDT) calibrated Si photodetectors under 1 V bias condition.

Fig. 4
Fig. 4

(a)  1064 nm optical transient response of textured Si photodetector under 0 V bias condition. (b) Fourier transform of the pulsed transient response of the textured Si photodetector.

Metrics