Abstract

The optical properties of AgGaTe2 chalcopyrite semiconductor are studied by optical absorption, spectroscopic ellipsometry (SE), and thermoreflectance (TR) spectroscopy. Optical absorption spectra suggest that AgGaTe2 is a direct-gap semiconductor having a bandgap of 1.2eV at T=300K. The pseudodielectric-function spectra of AgGaTe2 are determined by SE in the range between E=1.2 and 5.2eV for both states of polarization. These spectra reveal distinct structures at energies of the critical points in the Brillouin zone. The TR spectra are also measured in the E=1.05.3eV ranges at T=20K300K. The spin–orbit and crystal-field splitting parameters of AgGaTe2 are determined to be Δso=0.70eV and Δcr=0.23eV, respectively.

© 2010 Optical Society of America

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