Abstract

Thin films of AlN doped with chromium were deposited on flat Si (100) substrates and optical fibers by rf magnetron sputtering, using 100–200 W rf power and 58mTorr nitrogen. The thickness of the films on the flat silicon substrate was 400nm and on optical fibers with 80μm and smaller diameters was up to 10μm. Surface characterization and luminescence properties were investigated to fabricate resonant laser cavities. X-ray diffraction and scanning electron microscope studies showed that films deposited on flat silicon were amorphous, while those deposited on the fibers show columnar growth and some gain structure, most probably due to a temperature rise at the substrate during deposition. Cathodoluminescence and photoluminescence of the as-deposited and thermally activated AlN:Cr films showed an emission peak at 702nm as a result of the T42A24 transition.

© 2010 Optical Society of America

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  1. M. Maqbool, I. Ahmad, H. H. Richardson, and M. E. Kordesch, “Direct ultraviolet excitation of an amorphous AlN:praesiodimium phosphor by co-doped Gd3+ cathodoluminescence,” Appl. Phys. Lett. 91, 193511 (2007).
    [CrossRef]
  2. M. Maqbool, Martin E. Kordesch, and A. Kayani, “Enhanced cathodoluminescence from an amorphous AlN:holmium phosphor by co-doped Gd+3 for optical devices applications,” J. Opt Soc. Am. B 26, 998-1001 (2009).
    [CrossRef]
  3. P. Hidalgo, B. Mendez, P. S. Dutta, J. Piqueras, and E. Dieguez, “Luminescent properties of transition-metal-doped GaSb,” Phys. Rev. B 57, 6479-6484 (1998).
    [CrossRef]
  4. S. Muller, M. Zhou, Q. Li, and C. Ronning, “Intra-shell luminescence of transition-metal-implanted zinc oxide nanowires,” Nanotechnology 20, 135704 (2009).
    [CrossRef] [PubMed]
  5. M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Effect of material structure and thermal activation on the luminescence of praseodymium doped AlN thin films deposited by rf magnetron sputtering,” J. Mater. Sci. Technol. (Sofia) 42, 5657-5660 (2007).
  6. M. Maqbool and I. Ahmad, “Ultraviolet spectroscopy of praseodymium doped in AlN and the use of gallium nitride, as ultraviolet filters in radiation shielding and protection,” Curr. Appl. Phys. 9, 234-237 (2008).
    [CrossRef]
  7. M. Maqbool and T. Ali, “Intense red catho- and photoluminescence from 200 nm thick samarium doped amorphous AlN thin films for nano-devices applications,” Nanoscale Res. Lett. 4, 748-752 (2009).
    [CrossRef] [PubMed]
  8. S. B. Aldabergenova, G. Frank, H. P. Strunk, M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission,” J. Non-Cryst. Solids 352, 1290-1293 (2006).
    [CrossRef]
  9. H. Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, and H. J. Lozykowski, “Visible and infrared emission of GaN:Er thin films grown by sputtering,” J. Nitride Semicond. Res. 5, U130-U135 (2000).
  10. M. Caldwell, H. H. Richardson, and M. E. Kordesch, “Optical properties of manganese doped amorphous and crystalline aluminum nitride films,” J. Nitride Semicond. Res. 5, U142-U147 (2000).
  11. K. B. Thurbide and W. A. Aue, “Chemiluminescent emission spectra of lead, chromium, ruthenium, iron, manganese, rhenium, osmium and tungsten in the reactive flow detector ,” Spectrochim. Acta, Part B: At. Spectrosc. 57, 843-854 (2002).
    [CrossRef]
  12. S. C. Gedam, S. J. Dhoble, and S. V. Moharil, “Dy3+ and Mn2+ emission in KMgSO4Cl phosphor,” J. Lumin. 124, 120-124(2007).
    [CrossRef]
  13. M. Grinburg, J. Burzowska, Y. R. Shen, and K. L. Bray, “Inhomogeneous broadening of Cr3+ luminescence in doped LiTaO3,” Phys. Rev. B 63, 214104 (2001).
    [CrossRef]
  14. D. Lapraz, P. Iacconi, D. Daviller, and B. Guilhot, “Absorption Spectra of Cr3+ in Al2O3 part A. theoretical studies of the absorption bands and lines,” Phys. Status Solidi A, Appl. Res. 126, 521-531 (2006).
    [CrossRef]
  15. W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch, and I. G. Brown, “Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering,” Appl. Phys. Lett. 76, 3376-3378 (2000).
    [CrossRef]
  16. V. Dimitrova, P. G. Van Patten, H. H. Richardson, and M. E. Kordesch, “Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor,” Appl. Phys. Lett. 77, 478-479 (2000).
    [CrossRef]
  17. V. Dimitrova, P. G. Van Patten, H. Richardson, and M. E. Kordesch, “Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin films,” Appl. Surf. Sci. 175-176, 480-483 (2001).
    [CrossRef]
  18. M. L. Caldwell, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. L. Caldwell, M. E. Kordesch, and H. H. Richardson, “Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr,” J. Vac. Sci. Technol. A 19, 1894-1897 (2001).
    [CrossRef]
  19. M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Emission properties of an amorphous AlN:Cr3+ thin-film phosphor,” Appl. Phys. Lett. 78, 1246-1248 (2001).
    [CrossRef]
  20. M. L. Caldwell, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Visible luminescent activation of amorphous AlN:Eu thin-film phosphors with oxygen,” J. Nitride Semicond. Res. 6, 13-30 (2001).
  21. H. H. Richardson, P. G. Van Patten, D. R. Richardson, and M. E. Kordesch, “Thin-film electroluminescent devices grown on plastic substrates using an amorphous AlN:Tb3+ phosphor,” Appl. Phys. Lett. 80, 2207-2209 (2002).
    [CrossRef]
  22. H. Chen, K. Chen, D. A. Drabold, and M. E. Kordesch, “Band gap engineering in amorphous AlxGa1−xN: experiment and ab initio calculations,” Appl. Phys. Lett. 77, 1117-1119 (2000).
    [CrossRef]
  23. M. E. Little and M. E. Kordesch, “Band-gap engineering in sputter-deposited ScxGa1−xN,” Appl. Phys. Lett. 78, 2891-2892 (2001).
    [CrossRef]
  24. J. F. Suyver, A. Aebischer, S. García-Revilla, P. Gerner, and H. U. Güdel, “Anomalous power dependence of sensitized upconversion luminescence,” Phys. Rev. B 71, 125123 (2005).
    [CrossRef]
  25. S. V. Frolov, A. Fujii, D. Chinn, Z. V. Vardeny, K. Yoshino, and R. V. Gregory, “Cylindrical microlasers and light emitting devices from conducting polymers,” Appl. Phys. Lett. 72, 2811-2813 (1998).
    [CrossRef]
  26. S. V. Frolov, Z. V. Vardeny, and K. Yoshino, “Plastic microring lasers on fibers and wires,” Appl. Phys. Lett. 72, 1802-1804 (1998).
    [CrossRef]
  27. S. V. Frolov, M. Shkunov, Z. V. Vardeny, and K. Yoshino, “Ring microlasers from conducting polymers,” Phys. Rev. B 56, R4363-R4366 (1997).
    [CrossRef]

2009 (3)

M. Maqbool, Martin E. Kordesch, and A. Kayani, “Enhanced cathodoluminescence from an amorphous AlN:holmium phosphor by co-doped Gd+3 for optical devices applications,” J. Opt Soc. Am. B 26, 998-1001 (2009).
[CrossRef]

S. Muller, M. Zhou, Q. Li, and C. Ronning, “Intra-shell luminescence of transition-metal-implanted zinc oxide nanowires,” Nanotechnology 20, 135704 (2009).
[CrossRef] [PubMed]

M. Maqbool and T. Ali, “Intense red catho- and photoluminescence from 200 nm thick samarium doped amorphous AlN thin films for nano-devices applications,” Nanoscale Res. Lett. 4, 748-752 (2009).
[CrossRef] [PubMed]

2008 (1)

M. Maqbool and I. Ahmad, “Ultraviolet spectroscopy of praseodymium doped in AlN and the use of gallium nitride, as ultraviolet filters in radiation shielding and protection,” Curr. Appl. Phys. 9, 234-237 (2008).
[CrossRef]

2007 (3)

M. Maqbool, I. Ahmad, H. H. Richardson, and M. E. Kordesch, “Direct ultraviolet excitation of an amorphous AlN:praesiodimium phosphor by co-doped Gd3+ cathodoluminescence,” Appl. Phys. Lett. 91, 193511 (2007).
[CrossRef]

S. C. Gedam, S. J. Dhoble, and S. V. Moharil, “Dy3+ and Mn2+ emission in KMgSO4Cl phosphor,” J. Lumin. 124, 120-124(2007).
[CrossRef]

M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Effect of material structure and thermal activation on the luminescence of praseodymium doped AlN thin films deposited by rf magnetron sputtering,” J. Mater. Sci. Technol. (Sofia) 42, 5657-5660 (2007).

2006 (2)

S. B. Aldabergenova, G. Frank, H. P. Strunk, M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission,” J. Non-Cryst. Solids 352, 1290-1293 (2006).
[CrossRef]

D. Lapraz, P. Iacconi, D. Daviller, and B. Guilhot, “Absorption Spectra of Cr3+ in Al2O3 part A. theoretical studies of the absorption bands and lines,” Phys. Status Solidi A, Appl. Res. 126, 521-531 (2006).
[CrossRef]

2005 (1)

J. F. Suyver, A. Aebischer, S. García-Revilla, P. Gerner, and H. U. Güdel, “Anomalous power dependence of sensitized upconversion luminescence,” Phys. Rev. B 71, 125123 (2005).
[CrossRef]

2002 (2)

H. H. Richardson, P. G. Van Patten, D. R. Richardson, and M. E. Kordesch, “Thin-film electroluminescent devices grown on plastic substrates using an amorphous AlN:Tb3+ phosphor,” Appl. Phys. Lett. 80, 2207-2209 (2002).
[CrossRef]

K. B. Thurbide and W. A. Aue, “Chemiluminescent emission spectra of lead, chromium, ruthenium, iron, manganese, rhenium, osmium and tungsten in the reactive flow detector ,” Spectrochim. Acta, Part B: At. Spectrosc. 57, 843-854 (2002).
[CrossRef]

2001 (6)

M. E. Little and M. E. Kordesch, “Band-gap engineering in sputter-deposited ScxGa1−xN,” Appl. Phys. Lett. 78, 2891-2892 (2001).
[CrossRef]

M. Grinburg, J. Burzowska, Y. R. Shen, and K. L. Bray, “Inhomogeneous broadening of Cr3+ luminescence in doped LiTaO3,” Phys. Rev. B 63, 214104 (2001).
[CrossRef]

V. Dimitrova, P. G. Van Patten, H. Richardson, and M. E. Kordesch, “Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin films,” Appl. Surf. Sci. 175-176, 480-483 (2001).
[CrossRef]

M. L. Caldwell, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. L. Caldwell, M. E. Kordesch, and H. H. Richardson, “Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr,” J. Vac. Sci. Technol. A 19, 1894-1897 (2001).
[CrossRef]

M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Emission properties of an amorphous AlN:Cr3+ thin-film phosphor,” Appl. Phys. Lett. 78, 1246-1248 (2001).
[CrossRef]

M. L. Caldwell, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Visible luminescent activation of amorphous AlN:Eu thin-film phosphors with oxygen,” J. Nitride Semicond. Res. 6, 13-30 (2001).

2000 (5)

H. Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, and H. J. Lozykowski, “Visible and infrared emission of GaN:Er thin films grown by sputtering,” J. Nitride Semicond. Res. 5, U130-U135 (2000).

M. Caldwell, H. H. Richardson, and M. E. Kordesch, “Optical properties of manganese doped amorphous and crystalline aluminum nitride films,” J. Nitride Semicond. Res. 5, U142-U147 (2000).

H. Chen, K. Chen, D. A. Drabold, and M. E. Kordesch, “Band gap engineering in amorphous AlxGa1−xN: experiment and ab initio calculations,” Appl. Phys. Lett. 77, 1117-1119 (2000).
[CrossRef]

W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch, and I. G. Brown, “Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering,” Appl. Phys. Lett. 76, 3376-3378 (2000).
[CrossRef]

V. Dimitrova, P. G. Van Patten, H. H. Richardson, and M. E. Kordesch, “Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor,” Appl. Phys. Lett. 77, 478-479 (2000).
[CrossRef]

1998 (3)

S. V. Frolov, A. Fujii, D. Chinn, Z. V. Vardeny, K. Yoshino, and R. V. Gregory, “Cylindrical microlasers and light emitting devices from conducting polymers,” Appl. Phys. Lett. 72, 2811-2813 (1998).
[CrossRef]

S. V. Frolov, Z. V. Vardeny, and K. Yoshino, “Plastic microring lasers on fibers and wires,” Appl. Phys. Lett. 72, 1802-1804 (1998).
[CrossRef]

P. Hidalgo, B. Mendez, P. S. Dutta, J. Piqueras, and E. Dieguez, “Luminescent properties of transition-metal-doped GaSb,” Phys. Rev. B 57, 6479-6484 (1998).
[CrossRef]

1997 (1)

S. V. Frolov, M. Shkunov, Z. V. Vardeny, and K. Yoshino, “Ring microlasers from conducting polymers,” Phys. Rev. B 56, R4363-R4366 (1997).
[CrossRef]

Aebischer, A.

J. F. Suyver, A. Aebischer, S. García-Revilla, P. Gerner, and H. U. Güdel, “Anomalous power dependence of sensitized upconversion luminescence,” Phys. Rev. B 71, 125123 (2005).
[CrossRef]

Ahmad, I.

M. Maqbool and I. Ahmad, “Ultraviolet spectroscopy of praseodymium doped in AlN and the use of gallium nitride, as ultraviolet filters in radiation shielding and protection,” Curr. Appl. Phys. 9, 234-237 (2008).
[CrossRef]

M. Maqbool, I. Ahmad, H. H. Richardson, and M. E. Kordesch, “Direct ultraviolet excitation of an amorphous AlN:praesiodimium phosphor by co-doped Gd3+ cathodoluminescence,” Appl. Phys. Lett. 91, 193511 (2007).
[CrossRef]

Aldabergenova, S. B.

S. B. Aldabergenova, G. Frank, H. P. Strunk, M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission,” J. Non-Cryst. Solids 352, 1290-1293 (2006).
[CrossRef]

Ali, T.

M. Maqbool and T. Ali, “Intense red catho- and photoluminescence from 200 nm thick samarium doped amorphous AlN thin films for nano-devices applications,” Nanoscale Res. Lett. 4, 748-752 (2009).
[CrossRef] [PubMed]

Aue, W. A.

K. B. Thurbide and W. A. Aue, “Chemiluminescent emission spectra of lead, chromium, ruthenium, iron, manganese, rhenium, osmium and tungsten in the reactive flow detector ,” Spectrochim. Acta, Part B: At. Spectrosc. 57, 843-854 (2002).
[CrossRef]

Bray, K. L.

M. Grinburg, J. Burzowska, Y. R. Shen, and K. L. Bray, “Inhomogeneous broadening of Cr3+ luminescence in doped LiTaO3,” Phys. Rev. B 63, 214104 (2001).
[CrossRef]

Brown, I. G.

W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch, and I. G. Brown, “Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering,” Appl. Phys. Lett. 76, 3376-3378 (2000).
[CrossRef]

Burzowska, J.

M. Grinburg, J. Burzowska, Y. R. Shen, and K. L. Bray, “Inhomogeneous broadening of Cr3+ luminescence in doped LiTaO3,” Phys. Rev. B 63, 214104 (2001).
[CrossRef]

Caldwell, M.

M. Caldwell, H. H. Richardson, and M. E. Kordesch, “Optical properties of manganese doped amorphous and crystalline aluminum nitride films,” J. Nitride Semicond. Res. 5, U142-U147 (2000).

Caldwell, M. L.

M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Emission properties of an amorphous AlN:Cr3+ thin-film phosphor,” Appl. Phys. Lett. 78, 1246-1248 (2001).
[CrossRef]

M. L. Caldwell, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Visible luminescent activation of amorphous AlN:Eu thin-film phosphors with oxygen,” J. Nitride Semicond. Res. 6, 13-30 (2001).

M. L. Caldwell, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. L. Caldwell, M. E. Kordesch, and H. H. Richardson, “Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr,” J. Vac. Sci. Technol. A 19, 1894-1897 (2001).
[CrossRef]

M. L. Caldwell, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. L. Caldwell, M. E. Kordesch, and H. H. Richardson, “Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr,” J. Vac. Sci. Technol. A 19, 1894-1897 (2001).
[CrossRef]

Chen, H.

H. Chen, K. Chen, D. A. Drabold, and M. E. Kordesch, “Band gap engineering in amorphous AlxGa1−xN: experiment and ab initio calculations,” Appl. Phys. Lett. 77, 1117-1119 (2000).
[CrossRef]

W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch, and I. G. Brown, “Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering,” Appl. Phys. Lett. 76, 3376-3378 (2000).
[CrossRef]

H. Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, and H. J. Lozykowski, “Visible and infrared emission of GaN:Er thin films grown by sputtering,” J. Nitride Semicond. Res. 5, U130-U135 (2000).

Chen, K.

H. Chen, K. Chen, D. A. Drabold, and M. E. Kordesch, “Band gap engineering in amorphous AlxGa1−xN: experiment and ab initio calculations,” Appl. Phys. Lett. 77, 1117-1119 (2000).
[CrossRef]

Chinn, D.

S. V. Frolov, A. Fujii, D. Chinn, Z. V. Vardeny, K. Yoshino, and R. V. Gregory, “Cylindrical microlasers and light emitting devices from conducting polymers,” Appl. Phys. Lett. 72, 2811-2813 (1998).
[CrossRef]

Daviller, D.

D. Lapraz, P. Iacconi, D. Daviller, and B. Guilhot, “Absorption Spectra of Cr3+ in Al2O3 part A. theoretical studies of the absorption bands and lines,” Phys. Status Solidi A, Appl. Res. 126, 521-531 (2006).
[CrossRef]

Dhoble, S. J.

S. C. Gedam, S. J. Dhoble, and S. V. Moharil, “Dy3+ and Mn2+ emission in KMgSO4Cl phosphor,” J. Lumin. 124, 120-124(2007).
[CrossRef]

Dieguez, E.

P. Hidalgo, B. Mendez, P. S. Dutta, J. Piqueras, and E. Dieguez, “Luminescent properties of transition-metal-doped GaSb,” Phys. Rev. B 57, 6479-6484 (1998).
[CrossRef]

Dimitrova, V.

V. Dimitrova, P. G. Van Patten, H. Richardson, and M. E. Kordesch, “Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin films,” Appl. Surf. Sci. 175-176, 480-483 (2001).
[CrossRef]

V. Dimitrova, P. G. Van Patten, H. H. Richardson, and M. E. Kordesch, “Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor,” Appl. Phys. Lett. 77, 478-479 (2000).
[CrossRef]

Dimitrova, V. I.

M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Emission properties of an amorphous AlN:Cr3+ thin-film phosphor,” Appl. Phys. Lett. 78, 1246-1248 (2001).
[CrossRef]

M. L. Caldwell, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. L. Caldwell, M. E. Kordesch, and H. H. Richardson, “Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr,” J. Vac. Sci. Technol. A 19, 1894-1897 (2001).
[CrossRef]

Drabold, D. A.

H. Chen, K. Chen, D. A. Drabold, and M. E. Kordesch, “Band gap engineering in amorphous AlxGa1−xN: experiment and ab initio calculations,” Appl. Phys. Lett. 77, 1117-1119 (2000).
[CrossRef]

Dutta, P. S.

P. Hidalgo, B. Mendez, P. S. Dutta, J. Piqueras, and E. Dieguez, “Luminescent properties of transition-metal-doped GaSb,” Phys. Rev. B 57, 6479-6484 (1998).
[CrossRef]

Frank, G.

S. B. Aldabergenova, G. Frank, H. P. Strunk, M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission,” J. Non-Cryst. Solids 352, 1290-1293 (2006).
[CrossRef]

Frolov, S. V.

S. V. Frolov, A. Fujii, D. Chinn, Z. V. Vardeny, K. Yoshino, and R. V. Gregory, “Cylindrical microlasers and light emitting devices from conducting polymers,” Appl. Phys. Lett. 72, 2811-2813 (1998).
[CrossRef]

S. V. Frolov, Z. V. Vardeny, and K. Yoshino, “Plastic microring lasers on fibers and wires,” Appl. Phys. Lett. 72, 1802-1804 (1998).
[CrossRef]

S. V. Frolov, M. Shkunov, Z. V. Vardeny, and K. Yoshino, “Ring microlasers from conducting polymers,” Phys. Rev. B 56, R4363-R4366 (1997).
[CrossRef]

Fujii, A.

S. V. Frolov, A. Fujii, D. Chinn, Z. V. Vardeny, K. Yoshino, and R. V. Gregory, “Cylindrical microlasers and light emitting devices from conducting polymers,” Appl. Phys. Lett. 72, 2811-2813 (1998).
[CrossRef]

García-Revilla, S.

J. F. Suyver, A. Aebischer, S. García-Revilla, P. Gerner, and H. U. Güdel, “Anomalous power dependence of sensitized upconversion luminescence,” Phys. Rev. B 71, 125123 (2005).
[CrossRef]

Gedam, S. C.

S. C. Gedam, S. J. Dhoble, and S. V. Moharil, “Dy3+ and Mn2+ emission in KMgSO4Cl phosphor,” J. Lumin. 124, 120-124(2007).
[CrossRef]

Gerner, P.

J. F. Suyver, A. Aebischer, S. García-Revilla, P. Gerner, and H. U. Güdel, “Anomalous power dependence of sensitized upconversion luminescence,” Phys. Rev. B 71, 125123 (2005).
[CrossRef]

Gregory, R. V.

S. V. Frolov, A. Fujii, D. Chinn, Z. V. Vardeny, K. Yoshino, and R. V. Gregory, “Cylindrical microlasers and light emitting devices from conducting polymers,” Appl. Phys. Lett. 72, 2811-2813 (1998).
[CrossRef]

Grinburg, M.

M. Grinburg, J. Burzowska, Y. R. Shen, and K. L. Bray, “Inhomogeneous broadening of Cr3+ luminescence in doped LiTaO3,” Phys. Rev. B 63, 214104 (2001).
[CrossRef]

Güdel, H. U.

J. F. Suyver, A. Aebischer, S. García-Revilla, P. Gerner, and H. U. Güdel, “Anomalous power dependence of sensitized upconversion luminescence,” Phys. Rev. B 71, 125123 (2005).
[CrossRef]

Guilhot, B.

D. Lapraz, P. Iacconi, D. Daviller, and B. Guilhot, “Absorption Spectra of Cr3+ in Al2O3 part A. theoretical studies of the absorption bands and lines,” Phys. Status Solidi A, Appl. Res. 126, 521-531 (2006).
[CrossRef]

Gurumurugan, K.

H. Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, and H. J. Lozykowski, “Visible and infrared emission of GaN:Er thin films grown by sputtering,” J. Nitride Semicond. Res. 5, U130-U135 (2000).

Hidalgo, P.

P. Hidalgo, B. Mendez, P. S. Dutta, J. Piqueras, and E. Dieguez, “Luminescent properties of transition-metal-doped GaSb,” Phys. Rev. B 57, 6479-6484 (1998).
[CrossRef]

Iacconi, P.

D. Lapraz, P. Iacconi, D. Daviller, and B. Guilhot, “Absorption Spectra of Cr3+ in Al2O3 part A. theoretical studies of the absorption bands and lines,” Phys. Status Solidi A, Appl. Res. 126, 521-531 (2006).
[CrossRef]

Jadwisienczak, W. M.

H. Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, and H. J. Lozykowski, “Visible and infrared emission of GaN:Er thin films grown by sputtering,” J. Nitride Semicond. Res. 5, U130-U135 (2000).

W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch, and I. G. Brown, “Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering,” Appl. Phys. Lett. 76, 3376-3378 (2000).
[CrossRef]

Kayani, A.

M. Maqbool, Martin E. Kordesch, and A. Kayani, “Enhanced cathodoluminescence from an amorphous AlN:holmium phosphor by co-doped Gd+3 for optical devices applications,” J. Opt Soc. Am. B 26, 998-1001 (2009).
[CrossRef]

Kordesch, M.

W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch, and I. G. Brown, “Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering,” Appl. Phys. Lett. 76, 3376-3378 (2000).
[CrossRef]

Kordesch, M. E.

M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Effect of material structure and thermal activation on the luminescence of praseodymium doped AlN thin films deposited by rf magnetron sputtering,” J. Mater. Sci. Technol. (Sofia) 42, 5657-5660 (2007).

M. Maqbool, I. Ahmad, H. H. Richardson, and M. E. Kordesch, “Direct ultraviolet excitation of an amorphous AlN:praesiodimium phosphor by co-doped Gd3+ cathodoluminescence,” Appl. Phys. Lett. 91, 193511 (2007).
[CrossRef]

S. B. Aldabergenova, G. Frank, H. P. Strunk, M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission,” J. Non-Cryst. Solids 352, 1290-1293 (2006).
[CrossRef]

H. H. Richardson, P. G. Van Patten, D. R. Richardson, and M. E. Kordesch, “Thin-film electroluminescent devices grown on plastic substrates using an amorphous AlN:Tb3+ phosphor,” Appl. Phys. Lett. 80, 2207-2209 (2002).
[CrossRef]

M. L. Caldwell, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. L. Caldwell, M. E. Kordesch, and H. H. Richardson, “Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr,” J. Vac. Sci. Technol. A 19, 1894-1897 (2001).
[CrossRef]

V. Dimitrova, P. G. Van Patten, H. Richardson, and M. E. Kordesch, “Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin films,” Appl. Surf. Sci. 175-176, 480-483 (2001).
[CrossRef]

M. L. Caldwell, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Visible luminescent activation of amorphous AlN:Eu thin-film phosphors with oxygen,” J. Nitride Semicond. Res. 6, 13-30 (2001).

M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Emission properties of an amorphous AlN:Cr3+ thin-film phosphor,” Appl. Phys. Lett. 78, 1246-1248 (2001).
[CrossRef]

M. E. Little and M. E. Kordesch, “Band-gap engineering in sputter-deposited ScxGa1−xN,” Appl. Phys. Lett. 78, 2891-2892 (2001).
[CrossRef]

H. Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, and H. J. Lozykowski, “Visible and infrared emission of GaN:Er thin films grown by sputtering,” J. Nitride Semicond. Res. 5, U130-U135 (2000).

V. Dimitrova, P. G. Van Patten, H. H. Richardson, and M. E. Kordesch, “Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor,” Appl. Phys. Lett. 77, 478-479 (2000).
[CrossRef]

M. Caldwell, H. H. Richardson, and M. E. Kordesch, “Optical properties of manganese doped amorphous and crystalline aluminum nitride films,” J. Nitride Semicond. Res. 5, U142-U147 (2000).

H. Chen, K. Chen, D. A. Drabold, and M. E. Kordesch, “Band gap engineering in amorphous AlxGa1−xN: experiment and ab initio calculations,” Appl. Phys. Lett. 77, 1117-1119 (2000).
[CrossRef]

Kordesch, Martin E.

M. Maqbool, Martin E. Kordesch, and A. Kayani, “Enhanced cathodoluminescence from an amorphous AlN:holmium phosphor by co-doped Gd+3 for optical devices applications,” J. Opt Soc. Am. B 26, 998-1001 (2009).
[CrossRef]

Lapraz, D.

D. Lapraz, P. Iacconi, D. Daviller, and B. Guilhot, “Absorption Spectra of Cr3+ in Al2O3 part A. theoretical studies of the absorption bands and lines,” Phys. Status Solidi A, Appl. Res. 126, 521-531 (2006).
[CrossRef]

Li, Q.

S. Muller, M. Zhou, Q. Li, and C. Ronning, “Intra-shell luminescence of transition-metal-implanted zinc oxide nanowires,” Nanotechnology 20, 135704 (2009).
[CrossRef] [PubMed]

Little, M. E.

M. E. Little and M. E. Kordesch, “Band-gap engineering in sputter-deposited ScxGa1−xN,” Appl. Phys. Lett. 78, 2891-2892 (2001).
[CrossRef]

Lozykowski, H. J.

H. Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, and H. J. Lozykowski, “Visible and infrared emission of GaN:Er thin films grown by sputtering,” J. Nitride Semicond. Res. 5, U130-U135 (2000).

W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch, and I. G. Brown, “Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering,” Appl. Phys. Lett. 76, 3376-3378 (2000).
[CrossRef]

Maqbool, M.

M. Maqbool and T. Ali, “Intense red catho- and photoluminescence from 200 nm thick samarium doped amorphous AlN thin films for nano-devices applications,” Nanoscale Res. Lett. 4, 748-752 (2009).
[CrossRef] [PubMed]

M. Maqbool, Martin E. Kordesch, and A. Kayani, “Enhanced cathodoluminescence from an amorphous AlN:holmium phosphor by co-doped Gd+3 for optical devices applications,” J. Opt Soc. Am. B 26, 998-1001 (2009).
[CrossRef]

M. Maqbool and I. Ahmad, “Ultraviolet spectroscopy of praseodymium doped in AlN and the use of gallium nitride, as ultraviolet filters in radiation shielding and protection,” Curr. Appl. Phys. 9, 234-237 (2008).
[CrossRef]

M. Maqbool, I. Ahmad, H. H. Richardson, and M. E. Kordesch, “Direct ultraviolet excitation of an amorphous AlN:praesiodimium phosphor by co-doped Gd3+ cathodoluminescence,” Appl. Phys. Lett. 91, 193511 (2007).
[CrossRef]

M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Effect of material structure and thermal activation on the luminescence of praseodymium doped AlN thin films deposited by rf magnetron sputtering,” J. Mater. Sci. Technol. (Sofia) 42, 5657-5660 (2007).

S. B. Aldabergenova, G. Frank, H. P. Strunk, M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission,” J. Non-Cryst. Solids 352, 1290-1293 (2006).
[CrossRef]

Martin, A. L.

M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Emission properties of an amorphous AlN:Cr3+ thin-film phosphor,” Appl. Phys. Lett. 78, 1246-1248 (2001).
[CrossRef]

Mendez, B.

P. Hidalgo, B. Mendez, P. S. Dutta, J. Piqueras, and E. Dieguez, “Luminescent properties of transition-metal-doped GaSb,” Phys. Rev. B 57, 6479-6484 (1998).
[CrossRef]

Moharil, S. V.

S. C. Gedam, S. J. Dhoble, and S. V. Moharil, “Dy3+ and Mn2+ emission in KMgSO4Cl phosphor,” J. Lumin. 124, 120-124(2007).
[CrossRef]

Muller, S.

S. Muller, M. Zhou, Q. Li, and C. Ronning, “Intra-shell luminescence of transition-metal-implanted zinc oxide nanowires,” Nanotechnology 20, 135704 (2009).
[CrossRef] [PubMed]

Perjeru, F.

W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch, and I. G. Brown, “Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering,” Appl. Phys. Lett. 76, 3376-3378 (2000).
[CrossRef]

Piqueras, J.

P. Hidalgo, B. Mendez, P. S. Dutta, J. Piqueras, and E. Dieguez, “Luminescent properties of transition-metal-doped GaSb,” Phys. Rev. B 57, 6479-6484 (1998).
[CrossRef]

Richardson, D. R.

H. H. Richardson, P. G. Van Patten, D. R. Richardson, and M. E. Kordesch, “Thin-film electroluminescent devices grown on plastic substrates using an amorphous AlN:Tb3+ phosphor,” Appl. Phys. Lett. 80, 2207-2209 (2002).
[CrossRef]

Richardson, H.

V. Dimitrova, P. G. Van Patten, H. Richardson, and M. E. Kordesch, “Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin films,” Appl. Surf. Sci. 175-176, 480-483 (2001).
[CrossRef]

Richardson, H. H.

M. Maqbool, I. Ahmad, H. H. Richardson, and M. E. Kordesch, “Direct ultraviolet excitation of an amorphous AlN:praesiodimium phosphor by co-doped Gd3+ cathodoluminescence,” Appl. Phys. Lett. 91, 193511 (2007).
[CrossRef]

M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Effect of material structure and thermal activation on the luminescence of praseodymium doped AlN thin films deposited by rf magnetron sputtering,” J. Mater. Sci. Technol. (Sofia) 42, 5657-5660 (2007).

S. B. Aldabergenova, G. Frank, H. P. Strunk, M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission,” J. Non-Cryst. Solids 352, 1290-1293 (2006).
[CrossRef]

H. H. Richardson, P. G. Van Patten, D. R. Richardson, and M. E. Kordesch, “Thin-film electroluminescent devices grown on plastic substrates using an amorphous AlN:Tb3+ phosphor,” Appl. Phys. Lett. 80, 2207-2209 (2002).
[CrossRef]

M. L. Caldwell, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. L. Caldwell, M. E. Kordesch, and H. H. Richardson, “Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr,” J. Vac. Sci. Technol. A 19, 1894-1897 (2001).
[CrossRef]

M. L. Caldwell, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Visible luminescent activation of amorphous AlN:Eu thin-film phosphors with oxygen,” J. Nitride Semicond. Res. 6, 13-30 (2001).

M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Emission properties of an amorphous AlN:Cr3+ thin-film phosphor,” Appl. Phys. Lett. 78, 1246-1248 (2001).
[CrossRef]

V. Dimitrova, P. G. Van Patten, H. H. Richardson, and M. E. Kordesch, “Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor,” Appl. Phys. Lett. 77, 478-479 (2000).
[CrossRef]

M. Caldwell, H. H. Richardson, and M. E. Kordesch, “Optical properties of manganese doped amorphous and crystalline aluminum nitride films,” J. Nitride Semicond. Res. 5, U142-U147 (2000).

Ronning, C.

S. Muller, M. Zhou, Q. Li, and C. Ronning, “Intra-shell luminescence of transition-metal-implanted zinc oxide nanowires,” Nanotechnology 20, 135704 (2009).
[CrossRef] [PubMed]

Shen, Y. R.

M. Grinburg, J. Burzowska, Y. R. Shen, and K. L. Bray, “Inhomogeneous broadening of Cr3+ luminescence in doped LiTaO3,” Phys. Rev. B 63, 214104 (2001).
[CrossRef]

Shkunov, M.

S. V. Frolov, M. Shkunov, Z. V. Vardeny, and K. Yoshino, “Ring microlasers from conducting polymers,” Phys. Rev. B 56, R4363-R4366 (1997).
[CrossRef]

Spalding, C. M.

M. L. Caldwell, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. L. Caldwell, M. E. Kordesch, and H. H. Richardson, “Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr,” J. Vac. Sci. Technol. A 19, 1894-1897 (2001).
[CrossRef]

Strunk, H. P.

S. B. Aldabergenova, G. Frank, H. P. Strunk, M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission,” J. Non-Cryst. Solids 352, 1290-1293 (2006).
[CrossRef]

Suyver, J. F.

J. F. Suyver, A. Aebischer, S. García-Revilla, P. Gerner, and H. U. Güdel, “Anomalous power dependence of sensitized upconversion luminescence,” Phys. Rev. B 71, 125123 (2005).
[CrossRef]

Thurbide, K. B.

K. B. Thurbide and W. A. Aue, “Chemiluminescent emission spectra of lead, chromium, ruthenium, iron, manganese, rhenium, osmium and tungsten in the reactive flow detector ,” Spectrochim. Acta, Part B: At. Spectrosc. 57, 843-854 (2002).
[CrossRef]

Van Patten, P. G.

H. H. Richardson, P. G. Van Patten, D. R. Richardson, and M. E. Kordesch, “Thin-film electroluminescent devices grown on plastic substrates using an amorphous AlN:Tb3+ phosphor,” Appl. Phys. Lett. 80, 2207-2209 (2002).
[CrossRef]

M. L. Caldwell, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. L. Caldwell, M. E. Kordesch, and H. H. Richardson, “Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr,” J. Vac. Sci. Technol. A 19, 1894-1897 (2001).
[CrossRef]

V. Dimitrova, P. G. Van Patten, H. Richardson, and M. E. Kordesch, “Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin films,” Appl. Surf. Sci. 175-176, 480-483 (2001).
[CrossRef]

M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Emission properties of an amorphous AlN:Cr3+ thin-film phosphor,” Appl. Phys. Lett. 78, 1246-1248 (2001).
[CrossRef]

M. L. Caldwell, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Visible luminescent activation of amorphous AlN:Eu thin-film phosphors with oxygen,” J. Nitride Semicond. Res. 6, 13-30 (2001).

V. Dimitrova, P. G. Van Patten, H. H. Richardson, and M. E. Kordesch, “Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor,” Appl. Phys. Lett. 77, 478-479 (2000).
[CrossRef]

Vardeny, Z. V.

S. V. Frolov, Z. V. Vardeny, and K. Yoshino, “Plastic microring lasers on fibers and wires,” Appl. Phys. Lett. 72, 1802-1804 (1998).
[CrossRef]

S. V. Frolov, A. Fujii, D. Chinn, Z. V. Vardeny, K. Yoshino, and R. V. Gregory, “Cylindrical microlasers and light emitting devices from conducting polymers,” Appl. Phys. Lett. 72, 2811-2813 (1998).
[CrossRef]

S. V. Frolov, M. Shkunov, Z. V. Vardeny, and K. Yoshino, “Ring microlasers from conducting polymers,” Phys. Rev. B 56, R4363-R4366 (1997).
[CrossRef]

Yoshino, K.

S. V. Frolov, A. Fujii, D. Chinn, Z. V. Vardeny, K. Yoshino, and R. V. Gregory, “Cylindrical microlasers and light emitting devices from conducting polymers,” Appl. Phys. Lett. 72, 2811-2813 (1998).
[CrossRef]

S. V. Frolov, Z. V. Vardeny, and K. Yoshino, “Plastic microring lasers on fibers and wires,” Appl. Phys. Lett. 72, 1802-1804 (1998).
[CrossRef]

S. V. Frolov, M. Shkunov, Z. V. Vardeny, and K. Yoshino, “Ring microlasers from conducting polymers,” Phys. Rev. B 56, R4363-R4366 (1997).
[CrossRef]

Zhou, M.

S. Muller, M. Zhou, Q. Li, and C. Ronning, “Intra-shell luminescence of transition-metal-implanted zinc oxide nanowires,” Nanotechnology 20, 135704 (2009).
[CrossRef] [PubMed]

Appl. Phys. Lett. (9)

M. Maqbool, I. Ahmad, H. H. Richardson, and M. E. Kordesch, “Direct ultraviolet excitation of an amorphous AlN:praesiodimium phosphor by co-doped Gd3+ cathodoluminescence,” Appl. Phys. Lett. 91, 193511 (2007).
[CrossRef]

W. M. Jadwisienczak, H. J. Lozykowski, F. Perjeru, H. Chen, M. Kordesch, and I. G. Brown, “Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering,” Appl. Phys. Lett. 76, 3376-3378 (2000).
[CrossRef]

V. Dimitrova, P. G. Van Patten, H. H. Richardson, and M. E. Kordesch, “Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor,” Appl. Phys. Lett. 77, 478-479 (2000).
[CrossRef]

M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Emission properties of an amorphous AlN:Cr3+ thin-film phosphor,” Appl. Phys. Lett. 78, 1246-1248 (2001).
[CrossRef]

H. H. Richardson, P. G. Van Patten, D. R. Richardson, and M. E. Kordesch, “Thin-film electroluminescent devices grown on plastic substrates using an amorphous AlN:Tb3+ phosphor,” Appl. Phys. Lett. 80, 2207-2209 (2002).
[CrossRef]

H. Chen, K. Chen, D. A. Drabold, and M. E. Kordesch, “Band gap engineering in amorphous AlxGa1−xN: experiment and ab initio calculations,” Appl. Phys. Lett. 77, 1117-1119 (2000).
[CrossRef]

M. E. Little and M. E. Kordesch, “Band-gap engineering in sputter-deposited ScxGa1−xN,” Appl. Phys. Lett. 78, 2891-2892 (2001).
[CrossRef]

S. V. Frolov, A. Fujii, D. Chinn, Z. V. Vardeny, K. Yoshino, and R. V. Gregory, “Cylindrical microlasers and light emitting devices from conducting polymers,” Appl. Phys. Lett. 72, 2811-2813 (1998).
[CrossRef]

S. V. Frolov, Z. V. Vardeny, and K. Yoshino, “Plastic microring lasers on fibers and wires,” Appl. Phys. Lett. 72, 1802-1804 (1998).
[CrossRef]

Appl. Surf. Sci. (1)

V. Dimitrova, P. G. Van Patten, H. Richardson, and M. E. Kordesch, “Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin films,” Appl. Surf. Sci. 175-176, 480-483 (2001).
[CrossRef]

Curr. Appl. Phys. (1)

M. Maqbool and I. Ahmad, “Ultraviolet spectroscopy of praseodymium doped in AlN and the use of gallium nitride, as ultraviolet filters in radiation shielding and protection,” Curr. Appl. Phys. 9, 234-237 (2008).
[CrossRef]

J. Lumin. (1)

S. C. Gedam, S. J. Dhoble, and S. V. Moharil, “Dy3+ and Mn2+ emission in KMgSO4Cl phosphor,” J. Lumin. 124, 120-124(2007).
[CrossRef]

J. Mater. Sci. Technol. (Sofia) (1)

M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Effect of material structure and thermal activation on the luminescence of praseodymium doped AlN thin films deposited by rf magnetron sputtering,” J. Mater. Sci. Technol. (Sofia) 42, 5657-5660 (2007).

J. Nitride Semicond. Res. (3)

H. Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, and H. J. Lozykowski, “Visible and infrared emission of GaN:Er thin films grown by sputtering,” J. Nitride Semicond. Res. 5, U130-U135 (2000).

M. Caldwell, H. H. Richardson, and M. E. Kordesch, “Optical properties of manganese doped amorphous and crystalline aluminum nitride films,” J. Nitride Semicond. Res. 5, U142-U147 (2000).

M. L. Caldwell, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Visible luminescent activation of amorphous AlN:Eu thin-film phosphors with oxygen,” J. Nitride Semicond. Res. 6, 13-30 (2001).

J. Non-Cryst. Solids (1)

S. B. Aldabergenova, G. Frank, H. P. Strunk, M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Structure changes of AlN:Ho films with annealing and enhancement of the Ho3+ emission,” J. Non-Cryst. Solids 352, 1290-1293 (2006).
[CrossRef]

J. Opt Soc. Am. B (1)

M. Maqbool, Martin E. Kordesch, and A. Kayani, “Enhanced cathodoluminescence from an amorphous AlN:holmium phosphor by co-doped Gd+3 for optical devices applications,” J. Opt Soc. Am. B 26, 998-1001 (2009).
[CrossRef]

J. Vac. Sci. Technol. A (1)

M. L. Caldwell, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. L. Caldwell, M. E. Kordesch, and H. H. Richardson, “Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr,” J. Vac. Sci. Technol. A 19, 1894-1897 (2001).
[CrossRef]

Nanoscale Res. Lett. (1)

M. Maqbool and T. Ali, “Intense red catho- and photoluminescence from 200 nm thick samarium doped amorphous AlN thin films for nano-devices applications,” Nanoscale Res. Lett. 4, 748-752 (2009).
[CrossRef] [PubMed]

Nanotechnology (1)

S. Muller, M. Zhou, Q. Li, and C. Ronning, “Intra-shell luminescence of transition-metal-implanted zinc oxide nanowires,” Nanotechnology 20, 135704 (2009).
[CrossRef] [PubMed]

Phys. Rev. B (4)

P. Hidalgo, B. Mendez, P. S. Dutta, J. Piqueras, and E. Dieguez, “Luminescent properties of transition-metal-doped GaSb,” Phys. Rev. B 57, 6479-6484 (1998).
[CrossRef]

M. Grinburg, J. Burzowska, Y. R. Shen, and K. L. Bray, “Inhomogeneous broadening of Cr3+ luminescence in doped LiTaO3,” Phys. Rev. B 63, 214104 (2001).
[CrossRef]

S. V. Frolov, M. Shkunov, Z. V. Vardeny, and K. Yoshino, “Ring microlasers from conducting polymers,” Phys. Rev. B 56, R4363-R4366 (1997).
[CrossRef]

J. F. Suyver, A. Aebischer, S. García-Revilla, P. Gerner, and H. U. Güdel, “Anomalous power dependence of sensitized upconversion luminescence,” Phys. Rev. B 71, 125123 (2005).
[CrossRef]

Phys. Status Solidi A, Appl. Res. (1)

D. Lapraz, P. Iacconi, D. Daviller, and B. Guilhot, “Absorption Spectra of Cr3+ in Al2O3 part A. theoretical studies of the absorption bands and lines,” Phys. Status Solidi A, Appl. Res. 126, 521-531 (2006).
[CrossRef]

Spectrochim. Acta, Part B: At. Spectrosc. (1)

K. B. Thurbide and W. A. Aue, “Chemiluminescent emission spectra of lead, chromium, ruthenium, iron, manganese, rhenium, osmium and tungsten in the reactive flow detector ,” Spectrochim. Acta, Part B: At. Spectrosc. 57, 843-854 (2002).
[CrossRef]

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Figures (4)

Fig. 1
Fig. 1

Cross-sectional image of the film deposited on the fiber. The central black region shows the fiber, while the gray region around the fiber is the deposited film.

Fig. 2
Fig. 2

XRD spectrum of the AlN:Cr films deposited on a flat Si (100) substrate.

Fig. 3
Fig. 3

CL spectra of room temperature and thermally activated AlN:Cr films.

Fig. 4
Fig. 4

PL spectra of room temperature and thermally activated AlN:Cr films.

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