Abstract

Silicon nitride (Si3N4) and silicon dioxide (SiO2) films were prepared by ion-assisted deposition, and a higher deposition rate was achieved for both films. The results of x-ray diffraction and transmission electron microscopy measurements showed that the films have amorphous structures. As measured by infrared (IR) spectrometry and x-ray photoelectron spectrometry, both stoichiometric films have extremely low hydrogen content. The IR optical constants of the films were determined by spectroscopic ellipsometry. Both films exhibited a low extinction coefficient at wavelengths from 2 to 7μm. The application of Si3N4 and SiO2 films on the IR interference coating is demonstrated.

© 2010 Optical Society of America

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  1. L. F. Johnson and M. B. Moran, “Compressive coatings for strengthened sapphire,” in Window and Dome Technologies and Materials VI (SPIE Press, 1999), pp. 130-141.
  2. L. Feng, Z. Liu, Q. Li, and W. Song, “Investigation of SiO2/Si3N4 films prepared on sapphire by r.f. magnetron reactive sputtering,” Appl. Surf. Sci. 252, 4064-4070 (2006).
    [CrossRef]
  3. M. K. Gunde and M. Maček, “Infrared optical constants and dielectric response functions of silicon nitride and Oxynitride films,” Phys. Status Solidi A 1831, 439-449 (2001).
    [CrossRef]
  4. E. Dehan, P. Temple-Boyer, R. Henda, J. J. Pedroviejo, and E. Scheid, “Optical and structural properties of SiOx and SiNx materials,” Thin Solid Films 266, 14-19 (1995).
    [CrossRef]
  5. V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002).
    [CrossRef]
  6. S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
    [CrossRef]
  7. A. Barranco, J. Cotrino, F. Yubero, J. P. Espinós, J. Benítez, C. Clerc, and A. R. González-Elipe, “Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD,” Thin Solid Films 401, 150-158 (2001).
    [CrossRef]
  8. L. S. Patil, R. K. Pandey, J. P. Bange, S. A. Gaikwad, and D. K. Gautam, “Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films,” Opt. Mater. 27, 663-670 (2005).
    [CrossRef]
  9. M. Ruske, G. Bräuer, J. Pistner, J. Szczyrbowski, and M. Weigert, “Properties of SiO2 and Si3N4 layers deposited by MF twin magnetron sputtering using different target materials,” Thin Solid Films 351, 158-163 (1999).
    [CrossRef]
  10. T. Makino, “Composition and structure control by source gas ratio in LPCVD SiNx,” J. Electrochem. Soc. 130, 450-455 (1983).
    [CrossRef]
  11. S. K. Ghosh, and T. K. Hatwar, “Preparation and characterization of reactively sputtered silicon nitride thin films,” Thin Solid Films 166, 359-366 (1988).
    [CrossRef]
  12. M. F. Lambrinos, R. Valizadeh, and J. S. Colligon, “Effects of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering,” Appl. Opt. 35, 3620-3626 (1996).
    [CrossRef] [PubMed]
  13. T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, “Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition,” Nucl. Instrum. Methods Phys. Res. B 206, 343-347 (2003).
    [CrossRef]
  14. N. Primeau, C. Vautey, and M. Langlet, “The effect of thermal annealing on aerosol-gel deposited SiO2 films: a FTIR deconvolution study,” Thin Solid Films 310, 47-56 (1997).
    [CrossRef]
  15. A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).
  16. A. Tabata, N. Matsuno, Y. Suzuoki, and T. Mizutani, “Optical properties and structure of SiO2 films prepared by ion-beam sputtering,” Thin Solid Films 289, 84-89 (1996).
    [CrossRef]
  17. Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, and K. Muraoka, “In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma,” Appl. Surf. Sci. 121-122, 233-236 (1997).
    [CrossRef]
  18. B.-S. Yau and J.-L. Huang, “Effects of nitrogen flow on R.F. reactive magnetron sputtered silicon nitride films on high speed steel,” Surf. Coat. Technol. 176, 290-295 (2004).
    [CrossRef]
  19. B. R. Zhang, Z. Yu, G. J. Collins, T. Hwang, and W. H. Ritchie, “Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/Oxynitride films versus substrate temperature,” J. Vac. Sci. Technol. A 7, 176-188 (1989).
    [CrossRef]
  20. Z. Q. Yao, P. Yang, N. Huang, H. Sun, G. J. Wan, Y. X. Leng, and J. Y. Chen, “Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering,” Nucl. Instrum. Methods Phys. Res. B 240, 741-751 (2005).
    [CrossRef]
  21. C.-C. Lee, H.-L. Chen, J.-C. Hsu, and C.-L. Tien, “Interference coatings based on synthesized silicon nitride,” Appl. Opt. 38, 2078-2082 (1999).
    [CrossRef]
  22. G. M. Ingo, N. Zacchetti, D. della Sala, and C. Coluzza, “X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride (a-SiNx),” J. Vac. Sci. Technol. A 7, 3048-3055 (1989).
    [CrossRef]
  23. S.-H. Jeong, J.-K. Kim, B.-S. Kim, S.-H. Shim, and B.-T. Lee, “Characterization of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-reflection coating,” Vacuum 76, 507-515 (2004).
    [CrossRef]
  24. D. De Sousa Meneses, G. Gruener, M. Malki, and P. Echegut, “Causal Voigt profile for modeling reflectivity spectra of glasses,” J. Non-Cryst. Solids 351, 124-129 (2005).
    [CrossRef]
  25. M. K. Gunde, and B. Aleksandrov, “Infrared optical constants and roughness factor functions determination: the HTHRTR method,” Appl. Opt. 30, 3186-3196 (1991).
    [CrossRef] [PubMed]

2006

L. Feng, Z. Liu, Q. Li, and W. Song, “Investigation of SiO2/Si3N4 films prepared on sapphire by r.f. magnetron reactive sputtering,” Appl. Surf. Sci. 252, 4064-4070 (2006).
[CrossRef]

2005

L. S. Patil, R. K. Pandey, J. P. Bange, S. A. Gaikwad, and D. K. Gautam, “Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films,” Opt. Mater. 27, 663-670 (2005).
[CrossRef]

Z. Q. Yao, P. Yang, N. Huang, H. Sun, G. J. Wan, Y. X. Leng, and J. Y. Chen, “Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering,” Nucl. Instrum. Methods Phys. Res. B 240, 741-751 (2005).
[CrossRef]

D. De Sousa Meneses, G. Gruener, M. Malki, and P. Echegut, “Causal Voigt profile for modeling reflectivity spectra of glasses,” J. Non-Cryst. Solids 351, 124-129 (2005).
[CrossRef]

2004

S.-H. Jeong, J.-K. Kim, B.-S. Kim, S.-H. Shim, and B.-T. Lee, “Characterization of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-reflection coating,” Vacuum 76, 507-515 (2004).
[CrossRef]

B.-S. Yau and J.-L. Huang, “Effects of nitrogen flow on R.F. reactive magnetron sputtered silicon nitride films on high speed steel,” Surf. Coat. Technol. 176, 290-295 (2004).
[CrossRef]

2003

T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, “Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition,” Nucl. Instrum. Methods Phys. Res. B 206, 343-347 (2003).
[CrossRef]

2002

V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002).
[CrossRef]

2001

M. K. Gunde and M. Maček, “Infrared optical constants and dielectric response functions of silicon nitride and Oxynitride films,” Phys. Status Solidi A 1831, 439-449 (2001).
[CrossRef]

A. Barranco, J. Cotrino, F. Yubero, J. P. Espinós, J. Benítez, C. Clerc, and A. R. González-Elipe, “Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD,” Thin Solid Films 401, 150-158 (2001).
[CrossRef]

1999

M. Ruske, G. Bräuer, J. Pistner, J. Szczyrbowski, and M. Weigert, “Properties of SiO2 and Si3N4 layers deposited by MF twin magnetron sputtering using different target materials,” Thin Solid Films 351, 158-163 (1999).
[CrossRef]

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

C.-C. Lee, H.-L. Chen, J.-C. Hsu, and C.-L. Tien, “Interference coatings based on synthesized silicon nitride,” Appl. Opt. 38, 2078-2082 (1999).
[CrossRef]

1997

N. Primeau, C. Vautey, and M. Langlet, “The effect of thermal annealing on aerosol-gel deposited SiO2 films: a FTIR deconvolution study,” Thin Solid Films 310, 47-56 (1997).
[CrossRef]

Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, and K. Muraoka, “In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma,” Appl. Surf. Sci. 121-122, 233-236 (1997).
[CrossRef]

1996

M. F. Lambrinos, R. Valizadeh, and J. S. Colligon, “Effects of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering,” Appl. Opt. 35, 3620-3626 (1996).
[CrossRef] [PubMed]

A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).

A. Tabata, N. Matsuno, Y. Suzuoki, and T. Mizutani, “Optical properties and structure of SiO2 films prepared by ion-beam sputtering,” Thin Solid Films 289, 84-89 (1996).
[CrossRef]

1995

E. Dehan, P. Temple-Boyer, R. Henda, J. J. Pedroviejo, and E. Scheid, “Optical and structural properties of SiOx and SiNx materials,” Thin Solid Films 266, 14-19 (1995).
[CrossRef]

1991

1989

G. M. Ingo, N. Zacchetti, D. della Sala, and C. Coluzza, “X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride (a-SiNx),” J. Vac. Sci. Technol. A 7, 3048-3055 (1989).
[CrossRef]

B. R. Zhang, Z. Yu, G. J. Collins, T. Hwang, and W. H. Ritchie, “Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/Oxynitride films versus substrate temperature,” J. Vac. Sci. Technol. A 7, 176-188 (1989).
[CrossRef]

1988

S. K. Ghosh, and T. K. Hatwar, “Preparation and characterization of reactively sputtered silicon nitride thin films,” Thin Solid Films 166, 359-366 (1988).
[CrossRef]

1983

T. Makino, “Composition and structure control by source gas ratio in LPCVD SiNx,” J. Electrochem. Soc. 130, 450-455 (1983).
[CrossRef]

Aleksandrov, B.

Alfonsetti, R.

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

Asanuma, T.

T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, “Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition,” Nucl. Instrum. Methods Phys. Res. B 206, 343-347 (2003).
[CrossRef]

Bange, J. P.

L. S. Patil, R. K. Pandey, J. P. Bange, S. A. Gaikwad, and D. K. Gautam, “Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films,” Opt. Mater. 27, 663-670 (2005).
[CrossRef]

Barranco, A.

A. Barranco, J. Cotrino, F. Yubero, J. P. Espinós, J. Benítez, C. Clerc, and A. R. González-Elipe, “Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD,” Thin Solid Films 401, 150-158 (2001).
[CrossRef]

Benítez, J.

A. Barranco, J. Cotrino, F. Yubero, J. P. Espinós, J. Benítez, C. Clerc, and A. R. González-Elipe, “Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD,” Thin Solid Films 401, 150-158 (2001).
[CrossRef]

Bracchitta, G.

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

Bräuer, G.

M. Ruske, G. Bräuer, J. Pistner, J. Szczyrbowski, and M. Weigert, “Properties of SiO2 and Si3N4 layers deposited by MF twin magnetron sputtering using different target materials,” Thin Solid Films 351, 158-163 (1999).
[CrossRef]

Chen, H.-L.

Chen, J. Y.

Z. Q. Yao, P. Yang, N. Huang, H. Sun, G. J. Wan, Y. X. Leng, and J. Y. Chen, “Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering,” Nucl. Instrum. Methods Phys. Res. B 240, 741-751 (2005).
[CrossRef]

Clerc, C.

A. Barranco, J. Cotrino, F. Yubero, J. P. Espinós, J. Benítez, C. Clerc, and A. R. González-Elipe, “Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD,” Thin Solid Films 401, 150-158 (2001).
[CrossRef]

Colaric, B.

A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).

Colligon, J. S.

Collins, G. J.

B. R. Zhang, Z. Yu, G. J. Collins, T. Hwang, and W. H. Ritchie, “Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/Oxynitride films versus substrate temperature,” J. Vac. Sci. Technol. A 7, 176-188 (1989).
[CrossRef]

Coluzza, C.

G. M. Ingo, N. Zacchetti, D. della Sala, and C. Coluzza, “X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride (a-SiNx),” J. Vac. Sci. Technol. A 7, 3048-3055 (1989).
[CrossRef]

Cotrino, J.

A. Barranco, J. Cotrino, F. Yubero, J. P. Espinós, J. Benítez, C. Clerc, and A. R. González-Elipe, “Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD,” Thin Solid Films 401, 150-158 (2001).
[CrossRef]

De Sousa Meneses, D.

D. De Sousa Meneses, G. Gruener, M. Malki, and P. Echegut, “Causal Voigt profile for modeling reflectivity spectra of glasses,” J. Non-Cryst. Solids 351, 124-129 (2005).
[CrossRef]

De Tommasis, R.

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

Dehan, E.

E. Dehan, P. Temple-Boyer, R. Henda, J. J. Pedroviejo, and E. Scheid, “Optical and structural properties of SiOx and SiNx materials,” Thin Solid Films 266, 14-19 (1995).
[CrossRef]

Demšar, A.

A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).

Echegut, P.

D. De Sousa Meneses, G. Gruener, M. Malki, and P. Echegut, “Causal Voigt profile for modeling reflectivity spectra of glasses,” J. Non-Cryst. Solids 351, 124-129 (2005).
[CrossRef]

Espinós, J. P.

A. Barranco, J. Cotrino, F. Yubero, J. P. Espinós, J. Benítez, C. Clerc, and A. R. González-Elipe, “Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD,” Thin Solid Films 401, 150-158 (2001).
[CrossRef]

Feng, L.

L. Feng, Z. Liu, Q. Li, and W. Song, “Investigation of SiO2/Si3N4 films prepared on sapphire by r.f. magnetron reactive sputtering,” Appl. Surf. Sci. 252, 4064-4070 (2006).
[CrossRef]

Franzheld, R.

V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002).
[CrossRef]

Furukawa, K.

Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, and K. Muraoka, “In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma,” Appl. Surf. Sci. 121-122, 233-236 (1997).
[CrossRef]

Gaikwad, S. A.

L. S. Patil, R. K. Pandey, J. P. Bange, S. A. Gaikwad, and D. K. Gautam, “Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films,” Opt. Mater. 27, 663-670 (2005).
[CrossRef]

Gao, D. W.

Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, and K. Muraoka, “In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma,” Appl. Surf. Sci. 121-122, 233-236 (1997).
[CrossRef]

Gautam, D. K.

L. S. Patil, R. K. Pandey, J. P. Bange, S. A. Gaikwad, and D. K. Gautam, “Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films,” Opt. Mater. 27, 663-670 (2005).
[CrossRef]

Ghosh, S. K.

S. K. Ghosh, and T. K. Hatwar, “Preparation and characterization of reactively sputtered silicon nitride thin films,” Thin Solid Films 166, 359-366 (1988).
[CrossRef]

González-Elipe, A. R.

A. Barranco, J. Cotrino, F. Yubero, J. P. Espinós, J. Benítez, C. Clerc, and A. R. González-Elipe, “Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD,” Thin Solid Films 401, 150-158 (2001).
[CrossRef]

Gottschalch, V.

V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002).
[CrossRef]

Gruener, G.

D. De Sousa Meneses, G. Gruener, M. Malki, and P. Echegut, “Causal Voigt profile for modeling reflectivity spectra of glasses,” J. Non-Cryst. Solids 351, 124-129 (2005).
[CrossRef]

Gunde, M. K.

M. K. Gunde and M. Maček, “Infrared optical constants and dielectric response functions of silicon nitride and Oxynitride films,” Phys. Status Solidi A 1831, 439-449 (2001).
[CrossRef]

M. K. Gunde, and B. Aleksandrov, “Infrared optical constants and roughness factor functions determination: the HTHRTR method,” Appl. Opt. 30, 3186-3196 (1991).
[CrossRef] [PubMed]

Hardt, S.

V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002).
[CrossRef]

Hatwar, T. K.

S. K. Ghosh, and T. K. Hatwar, “Preparation and characterization of reactively sputtered silicon nitride thin films,” Thin Solid Films 166, 359-366 (1988).
[CrossRef]

Henda, R.

E. Dehan, P. Temple-Boyer, R. Henda, J. J. Pedroviejo, and E. Scheid, “Optical and structural properties of SiOx and SiNx materials,” Thin Solid Films 266, 14-19 (1995).
[CrossRef]

Hsu, J.-C.

Huang, J.-L.

B.-S. Yau and J.-L. Huang, “Effects of nitrogen flow on R.F. reactive magnetron sputtered silicon nitride films on high speed steel,” Surf. Coat. Technol. 176, 290-295 (2004).
[CrossRef]

Huang, N.

Z. Q. Yao, P. Yang, N. Huang, H. Sun, G. J. Wan, Y. X. Leng, and J. Y. Chen, “Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering,” Nucl. Instrum. Methods Phys. Res. B 240, 741-751 (2005).
[CrossRef]

Hwang, T.

B. R. Zhang, Z. Yu, G. J. Collins, T. Hwang, and W. H. Ritchie, “Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/Oxynitride films versus substrate temperature,” J. Vac. Sci. Technol. A 7, 176-188 (1989).
[CrossRef]

Ingo, G. M.

G. M. Ingo, N. Zacchetti, D. della Sala, and C. Coluzza, “X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride (a-SiNx),” J. Vac. Sci. Technol. A 7, 3048-3055 (1989).
[CrossRef]

Jeong, S.-H.

S.-H. Jeong, J.-K. Kim, B.-S. Kim, S.-H. Shim, and B.-T. Lee, “Characterization of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-reflection coating,” Vacuum 76, 507-515 (2004).
[CrossRef]

Johnson, L. F.

L. F. Johnson and M. B. Moran, “Compressive coatings for strengthened sapphire,” in Window and Dome Technologies and Materials VI (SPIE Press, 1999), pp. 130-141.

Kim, B.-S.

S.-H. Jeong, J.-K. Kim, B.-S. Kim, S.-H. Shim, and B.-T. Lee, “Characterization of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-reflection coating,” Vacuum 76, 507-515 (2004).
[CrossRef]

Kim, J.-K.

S.-H. Jeong, J.-K. Kim, B.-S. Kim, S.-H. Shim, and B.-T. Lee, “Characterization of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-reflection coating,” Vacuum 76, 507-515 (2004).
[CrossRef]

Kiuchi, M.

T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, “Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition,” Nucl. Instrum. Methods Phys. Res. B 206, 343-347 (2003).
[CrossRef]

Kvietkova, J.

V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002).
[CrossRef]

Lambrinos, M. F.

Langlet, M.

N. Primeau, C. Vautey, and M. Langlet, “The effect of thermal annealing on aerosol-gel deposited SiO2 films: a FTIR deconvolution study,” Thin Solid Films 310, 47-56 (1997).
[CrossRef]

Lee, B.-T.

S.-H. Jeong, J.-K. Kim, B.-S. Kim, S.-H. Shim, and B.-T. Lee, “Characterization of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-reflection coating,” Vacuum 76, 507-515 (2004).
[CrossRef]

Lee, C.-C.

Leng, Y. X.

Z. Q. Yao, P. Yang, N. Huang, H. Sun, G. J. Wan, Y. X. Leng, and J. Y. Chen, “Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering,” Nucl. Instrum. Methods Phys. Res. B 240, 741-751 (2005).
[CrossRef]

Li, Q.

L. Feng, Z. Liu, Q. Li, and W. Song, “Investigation of SiO2/Si3N4 films prepared on sapphire by r.f. magnetron reactive sputtering,” Appl. Surf. Sci. 252, 4064-4070 (2006).
[CrossRef]

Lindav, J.

A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).

Liu, C.

T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, “Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition,” Nucl. Instrum. Methods Phys. Res. B 206, 343-347 (2003).
[CrossRef]

Liu, Y. C.

Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, and K. Muraoka, “In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma,” Appl. Surf. Sci. 121-122, 233-236 (1997).
[CrossRef]

Liu, Z.

L. Feng, Z. Liu, Q. Li, and W. Song, “Investigation of SiO2/Si3N4 films prepared on sapphire by r.f. magnetron reactive sputtering,” Appl. Surf. Sci. 252, 4064-4070 (2006).
[CrossRef]

Lozzi, L.

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

Macek, M.

M. K. Gunde and M. Maček, “Infrared optical constants and dielectric response functions of silicon nitride and Oxynitride films,” Phys. Status Solidi A 1831, 439-449 (2001).
[CrossRef]

Makino, T.

T. Makino, “Composition and structure control by source gas ratio in LPCVD SiNx,” J. Electrochem. Soc. 130, 450-455 (1983).
[CrossRef]

Malki, M.

D. De Sousa Meneses, G. Gruener, M. Malki, and P. Echegut, “Causal Voigt profile for modeling reflectivity spectra of glasses,” J. Non-Cryst. Solids 351, 124-129 (2005).
[CrossRef]

Matsuno, N.

A. Tabata, N. Matsuno, Y. Suzuoki, and T. Mizutani, “Optical properties and structure of SiO2 films prepared by ion-beam sputtering,” Thin Solid Films 289, 84-89 (1996).
[CrossRef]

Matsutani, T.

T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, “Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition,” Nucl. Instrum. Methods Phys. Res. B 206, 343-347 (2003).
[CrossRef]

Mizutani, T.

A. Tabata, N. Matsuno, Y. Suzuoki, and T. Mizutani, “Optical properties and structure of SiO2 films prepared by ion-beam sputtering,” Thin Solid Films 289, 84-89 (1996).
[CrossRef]

Moccia, G.

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

Moran, M. B.

L. F. Johnson and M. B. Moran, “Compressive coatings for strengthened sapphire,” in Window and Dome Technologies and Materials VI (SPIE Press, 1999), pp. 130-141.

Muraoka, K.

Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, and K. Muraoka, “In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma,” Appl. Surf. Sci. 121-122, 233-236 (1997).
[CrossRef]

Nakashima, H.

Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, and K. Muraoka, “In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma,” Appl. Surf. Sci. 121-122, 233-236 (1997).
[CrossRef]

Orel, B.

A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).

Palumbo, E.

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

Pandey, R. K.

L. S. Patil, R. K. Pandey, J. P. Bange, S. A. Gaikwad, and D. K. Gautam, “Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films,” Opt. Mater. 27, 663-670 (2005).
[CrossRef]

Passacantando, M.

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

Patil, L. S.

L. S. Patil, R. K. Pandey, J. P. Bange, S. A. Gaikwad, and D. K. Gautam, “Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films,” Opt. Mater. 27, 663-670 (2005).
[CrossRef]

Pedroviejo, J. J.

E. Dehan, P. Temple-Boyer, R. Henda, J. J. Pedroviejo, and E. Scheid, “Optical and structural properties of SiOx and SiNx materials,” Thin Solid Films 266, 14-19 (1995).
[CrossRef]

Phani, A. R.

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

Pistner, J.

M. Ruske, G. Bräuer, J. Pistner, J. Szczyrbowski, and M. Weigert, “Properties of SiO2 and Si3N4 layers deposited by MF twin magnetron sputtering using different target materials,” Thin Solid Films 351, 158-163 (1999).
[CrossRef]

Pracek, B.

A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).

Primeau, N.

N. Primeau, C. Vautey, and M. Langlet, “The effect of thermal annealing on aerosol-gel deposited SiO2 films: a FTIR deconvolution study,” Thin Solid Films 310, 47-56 (1997).
[CrossRef]

Pudis, D.

V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002).
[CrossRef]

Rheinländer, B.

V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002).
[CrossRef]

Ritchie, W. H.

B. R. Zhang, Z. Yu, G. J. Collins, T. Hwang, and W. H. Ritchie, “Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/Oxynitride films versus substrate temperature,” J. Vac. Sci. Technol. A 7, 176-188 (1989).
[CrossRef]

Rus, S.

A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).

Ruske, M.

M. Ruske, G. Bräuer, J. Pistner, J. Szczyrbowski, and M. Weigert, “Properties of SiO2 and Si3N4 layers deposited by MF twin magnetron sputtering using different target materials,” Thin Solid Films 351, 158-163 (1999).
[CrossRef]

Sala, D. della

G. M. Ingo, N. Zacchetti, D. della Sala, and C. Coluzza, “X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride (a-SiNx),” J. Vac. Sci. Technol. A 7, 3048-3055 (1989).
[CrossRef]

Santucci, S.

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

Scheid, E.

E. Dehan, P. Temple-Boyer, R. Henda, J. J. Pedroviejo, and E. Scheid, “Optical and structural properties of SiOx and SiNx materials,” Thin Solid Films 266, 14-19 (1995).
[CrossRef]

Schmidt, R.

V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002).
[CrossRef]

Shim, S.-H.

S.-H. Jeong, J.-K. Kim, B.-S. Kim, S.-H. Shim, and B.-T. Lee, “Characterization of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-reflection coating,” Vacuum 76, 507-515 (2004).
[CrossRef]

Song, W.

L. Feng, Z. Liu, Q. Li, and W. Song, “Investigation of SiO2/Si3N4 films prepared on sapphire by r.f. magnetron reactive sputtering,” Appl. Surf. Sci. 252, 4064-4070 (2006).
[CrossRef]

Sun, H.

Z. Q. Yao, P. Yang, N. Huang, H. Sun, G. J. Wan, Y. X. Leng, and J. Y. Chen, “Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering,” Nucl. Instrum. Methods Phys. Res. B 240, 741-751 (2005).
[CrossRef]

Suzuoki, Y.

A. Tabata, N. Matsuno, Y. Suzuoki, and T. Mizutani, “Optical properties and structure of SiO2 films prepared by ion-beam sputtering,” Thin Solid Films 289, 84-89 (1996).
[CrossRef]

Švegelj, F.

A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).

Szczyrbowski, J.

M. Ruske, G. Bräuer, J. Pistner, J. Szczyrbowski, and M. Weigert, “Properties of SiO2 and Si3N4 layers deposited by MF twin magnetron sputtering using different target materials,” Thin Solid Films 351, 158-163 (1999).
[CrossRef]

Tabata, A.

A. Tabata, N. Matsuno, Y. Suzuoki, and T. Mizutani, “Optical properties and structure of SiO2 films prepared by ion-beam sputtering,” Thin Solid Films 289, 84-89 (1996).
[CrossRef]

Takeuchi, T.

T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, “Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition,” Nucl. Instrum. Methods Phys. Res. B 206, 343-347 (2003).
[CrossRef]

Temple-Boyer, P.

E. Dehan, P. Temple-Boyer, R. Henda, J. J. Pedroviejo, and E. Scheid, “Optical and structural properties of SiOx and SiNx materials,” Thin Solid Films 266, 14-19 (1995).
[CrossRef]

Tien, C.-L.

Torsi, A.

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

Uchino, K.

Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, and K. Muraoka, “In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma,” Appl. Surf. Sci. 121-122, 233-236 (1997).
[CrossRef]

Valizadeh, R.

Vautey, C.

N. Primeau, C. Vautey, and M. Langlet, “The effect of thermal annealing on aerosol-gel deposited SiO2 films: a FTIR deconvolution study,” Thin Solid Films 310, 47-56 (1997).
[CrossRef]

Wagner, G.

V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002).
[CrossRef]

Wan, G. J.

Z. Q. Yao, P. Yang, N. Huang, H. Sun, G. J. Wan, Y. X. Leng, and J. Y. Chen, “Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering,” Nucl. Instrum. Methods Phys. Res. B 240, 741-751 (2005).
[CrossRef]

Weigert, M.

M. Ruske, G. Bräuer, J. Pistner, J. Szczyrbowski, and M. Weigert, “Properties of SiO2 and Si3N4 layers deposited by MF twin magnetron sputtering using different target materials,” Thin Solid Films 351, 158-163 (1999).
[CrossRef]

Yang, P.

Z. Q. Yao, P. Yang, N. Huang, H. Sun, G. J. Wan, Y. X. Leng, and J. Y. Chen, “Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering,” Nucl. Instrum. Methods Phys. Res. B 240, 741-751 (2005).
[CrossRef]

Yao, Z. Q.

Z. Q. Yao, P. Yang, N. Huang, H. Sun, G. J. Wan, Y. X. Leng, and J. Y. Chen, “Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering,” Nucl. Instrum. Methods Phys. Res. B 240, 741-751 (2005).
[CrossRef]

Yau, B.-S.

B.-S. Yau and J.-L. Huang, “Effects of nitrogen flow on R.F. reactive magnetron sputtered silicon nitride films on high speed steel,” Surf. Coat. Technol. 176, 290-295 (2004).
[CrossRef]

Yu, Z.

B. R. Zhang, Z. Yu, G. J. Collins, T. Hwang, and W. H. Ritchie, “Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/Oxynitride films versus substrate temperature,” J. Vac. Sci. Technol. A 7, 176-188 (1989).
[CrossRef]

Yubero, F.

A. Barranco, J. Cotrino, F. Yubero, J. P. Espinós, J. Benítez, C. Clerc, and A. R. González-Elipe, “Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD,” Thin Solid Films 401, 150-158 (2001).
[CrossRef]

Zacchetti, N.

G. M. Ingo, N. Zacchetti, D. della Sala, and C. Coluzza, “X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride (a-SiNx),” J. Vac. Sci. Technol. A 7, 3048-3055 (1989).
[CrossRef]

Zalar, A.

A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).

Zhang, B. R.

B. R. Zhang, Z. Yu, G. J. Collins, T. Hwang, and W. H. Ritchie, “Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/Oxynitride films versus substrate temperature,” J. Vac. Sci. Technol. A 7, 176-188 (1989).
[CrossRef]

Appl. Opt.

Appl. Surf. Sci.

Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, and K. Muraoka, “In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma,” Appl. Surf. Sci. 121-122, 233-236 (1997).
[CrossRef]

L. Feng, Z. Liu, Q. Li, and W. Song, “Investigation of SiO2/Si3N4 films prepared on sapphire by r.f. magnetron reactive sputtering,” Appl. Surf. Sci. 252, 4064-4070 (2006).
[CrossRef]

J. Electrochem. Soc.

T. Makino, “Composition and structure control by source gas ratio in LPCVD SiNx,” J. Electrochem. Soc. 130, 450-455 (1983).
[CrossRef]

J. Non-Cryst. Solids

S. Santucci, L. Lozzi, M. Passacantando, A. R. Phani, E. Palumbo, G. Bracchitta, R. De Tommasis, A. Torsi, R. Alfonsetti, and G. Moccia, “Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2,” J. Non-Cryst. Solids 245, 224-231 (1999).
[CrossRef]

D. De Sousa Meneses, G. Gruener, M. Malki, and P. Echegut, “Causal Voigt profile for modeling reflectivity spectra of glasses,” J. Non-Cryst. Solids 351, 124-129 (2005).
[CrossRef]

J. Vac. Sci. Technol. A

G. M. Ingo, N. Zacchetti, D. della Sala, and C. Coluzza, “X-ray photoelectron spectroscopy investigation on the chemical structure of amorphous silicon nitride (a-SiNx),” J. Vac. Sci. Technol. A 7, 3048-3055 (1989).
[CrossRef]

B. R. Zhang, Z. Yu, G. J. Collins, T. Hwang, and W. H. Ritchie, “Chemical composition of soft vacuum electron beam assisted chemical vapor deposition of silicon nitride/Oxynitride films versus substrate temperature,” J. Vac. Sci. Technol. A 7, 176-188 (1989).
[CrossRef]

Nucl. Instrum. Methods Phys. Res. B

Z. Q. Yao, P. Yang, N. Huang, H. Sun, G. J. Wan, Y. X. Leng, and J. Y. Chen, “Composition, structure and properties of SiNx films fabricated by pulsed reactive closed-field unbalanced magnetron sputtering,” Nucl. Instrum. Methods Phys. Res. B 240, 741-751 (2005).
[CrossRef]

Nucl. Instrum. Methods Phys. Res. B

T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, “Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition,” Nucl. Instrum. Methods Phys. Res. B 206, 343-347 (2003).
[CrossRef]

Opt. Mater.

L. S. Patil, R. K. Pandey, J. P. Bange, S. A. Gaikwad, and D. K. Gautam, “Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films,” Opt. Mater. 27, 663-670 (2005).
[CrossRef]

Phys. Status Solidi A

M. K. Gunde and M. Maček, “Infrared optical constants and dielectric response functions of silicon nitride and Oxynitride films,” Phys. Status Solidi A 1831, 439-449 (2001).
[CrossRef]

Surf. Coat. Technol.

B.-S. Yau and J.-L. Huang, “Effects of nitrogen flow on R.F. reactive magnetron sputtered silicon nitride films on high speed steel,” Surf. Coat. Technol. 176, 290-295 (2004).
[CrossRef]

Thin Solid Films

E. Dehan, P. Temple-Boyer, R. Henda, J. J. Pedroviejo, and E. Scheid, “Optical and structural properties of SiOx and SiNx materials,” Thin Solid Films 266, 14-19 (1995).
[CrossRef]

V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld, “Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors,” Thin Solid Films 416, 224-232 (2002).
[CrossRef]

M. Ruske, G. Bräuer, J. Pistner, J. Szczyrbowski, and M. Weigert, “Properties of SiO2 and Si3N4 layers deposited by MF twin magnetron sputtering using different target materials,” Thin Solid Films 351, 158-163 (1999).
[CrossRef]

A. Barranco, J. Cotrino, F. Yubero, J. P. Espinós, J. Benítez, C. Clerc, and A. R. González-Elipe, “Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD,” Thin Solid Films 401, 150-158 (2001).
[CrossRef]

N. Primeau, C. Vautey, and M. Langlet, “The effect of thermal annealing on aerosol-gel deposited SiO2 films: a FTIR deconvolution study,” Thin Solid Films 310, 47-56 (1997).
[CrossRef]

S. K. Ghosh, and T. K. Hatwar, “Preparation and characterization of reactively sputtered silicon nitride thin films,” Thin Solid Films 166, 359-366 (1988).
[CrossRef]

A. Tabata, N. Matsuno, Y. Suzuoki, and T. Mizutani, “Optical properties and structure of SiO2 films prepared by ion-beam sputtering,” Thin Solid Films 289, 84-89 (1996).
[CrossRef]

Vacuum

S.-H. Jeong, J.-K. Kim, B.-S. Kim, S.-H. Shim, and B.-T. Lee, “Characterization of SiO2 and TiO2 films prepared using rf magnetron sputtering and their application to anti-reflection coating,” Vacuum 76, 507-515 (2004).
[CrossRef]

Other

L. F. Johnson and M. B. Moran, “Compressive coatings for strengthened sapphire,” in Window and Dome Technologies and Materials VI (SPIE Press, 1999), pp. 130-141.

A. Demšar, B. Colarič, S. Rus, J. Lindav, F. Švegelj, B. Orel, B. Praček, and A. Zalar, “FTIR spectroscopy and AES study of water containment in SiO2 thin films,” Thin Solid Films 281-282, 409-411 (1996).

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Figures (6)

Fig. 1
Fig. 1

TEM cross-sectional image of (a)  Si 3 N 4 and (b)  SiO 2 films.

Fig. 2
Fig. 2

Infrared absorbance spectrum of (a)  Si 3 N 4 and (b)  SiO 2 films.

Fig. 3
Fig. 3

Si 2 p and N 1 s core level spectra of Si 3 N 4 film.

Fig. 4
Fig. 4

Si 2 p and O 1 s core level spectra of SiO 2 film.

Fig. 5
Fig. 5

Refractive index and extinction coefficient of (a)  Si 3 N 4 and (b)  SiO 2 films at wavelengths from 2000 to 7000 nm .

Fig. 6
Fig. 6

Measured transmission of bare sapphire and sapphire coated on both sides of Si 3 N 4 and SiO 2 films.

Metrics