Abstract

The low-noise solar-blind photodetectors of indium-tin-oxide/LaAlO3/Ag (ITO/LAO/Ag) have been fabricated based on the properties of LAO bandgap excitation and the transparent conductance of ITO thin film. The ITO thin films are epitaxially grown on LAO wafers as the electrodes and detection windows of the photodetectors. The photodetectors have low noise and excellent electromagnetic shielding. The influence of the thickness of ITO thin films on the responsivity of the photodetectors has been studied. The photocurrent responsivity can reach 10.3mA/W under the irradiation of 200220nm for a photodetector with 5nm thick ITO film. The noise current is 1 pA order magnitude under the sunlight at midday. The experiment results suggest that ITO/LAO/Ag is one of the promising structures for the solar-blind deep-ultraviolet photodetectors.

© 2010 Optical Society of America

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  1. H. Jiang and T. Egawa, “Low-dark-current high-performance AlGaN solar-blind p-i-n photodiodes,” Jpn. J. Appl. Phys. 47, 1541–1543 (2008).
    [CrossRef]
  2. C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1−xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80, 3754–3756 (2002).
    [CrossRef]
  3. P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, “AlxGa1−xN for solar-blind UV detectors,” J. Cryst. Growth 231, 366–370 (2001).
    [CrossRef]
  4. A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
    [CrossRef]
  5. Y. Koide, M. Liao, and J. Alvarez, “Thermally stable solar-blind diamond UV photodetector,” Diam. Rel. Mater. 15, 1962–1966 (2006).
    [CrossRef]
  6. M. Bevilacqua and R. B. Jackman, “Extreme sensitivity displayed by single crystal diamond deep ultraviolet photoconductive devices,” Appl. Phys. Lett. 95, 243501 (2009).
    [CrossRef]
  7. Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93, 173505 (2008).
    [CrossRef]
  8. J. Xing, E. J. Guo, K. J. Jin, H. B. Lu, J. Wen, and G. Z. Yang, “Solar-blind deep-ultraviolet photodetectors based on an LaAlO3 single crystal,” Opt. Lett. 34, 1675–1677 (2009).
    [CrossRef] [PubMed]
  9. E. J. Guo, J. Xing, H. B. Lu, K. J. Jin, J. Wen, and G. Z. Yang, “Ultraviolet fast-response photoelectric effects in LiTaO3single crystal,” J. Phys. D 43, 015402 (2010).
    [CrossRef]
  10. Y. Z. Chiou and J. J. Tang, “GaN photodetectors with transparent indium tin oxide electrodes,” Jpn. J. Appl. Phys. 43, 4146–4149 (2004).
    [CrossRef]
  11. M. L. Lee, P. F. Chi, and J. K. Sheu, “Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio,” Appl. Phys. Lett. 94, 013512 (2009).
    [CrossRef]
  12. W. S. Jahng, A. H. Francis, H. Moon, J. I. Nanos, and M. D. Curtis, “Is indium tin oxide a suitable electrode in organic solar cells? Photovoltaic properties of interfaces in organic p/n junction photodiodes,” Appl. Phys. Lett. 88, 093504 (2006).
    [CrossRef]
  13. G. Z. Yang, H. B. Lu, F. Chen, T. Zhao, and Z. H. Chen, “Laser molecular beam epitaxy and characterization of perovskite oxide thin films,” J. Cryst. Growth 227, 929 (2001).
    [CrossRef]
  14. P. W. Peacock and J. Robertson, “Band offsets and Schottky barrier heights of high dielectric constant oxides,” J. Appl. Phys. 92, 4712–4721 (2002).
    [CrossRef]

2010

E. J. Guo, J. Xing, H. B. Lu, K. J. Jin, J. Wen, and G. Z. Yang, “Ultraviolet fast-response photoelectric effects in LiTaO3single crystal,” J. Phys. D 43, 015402 (2010).
[CrossRef]

2009

M. Bevilacqua and R. B. Jackman, “Extreme sensitivity displayed by single crystal diamond deep ultraviolet photoconductive devices,” Appl. Phys. Lett. 95, 243501 (2009).
[CrossRef]

M. L. Lee, P. F. Chi, and J. K. Sheu, “Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio,” Appl. Phys. Lett. 94, 013512 (2009).
[CrossRef]

J. Xing, E. J. Guo, K. J. Jin, H. B. Lu, J. Wen, and G. Z. Yang, “Solar-blind deep-ultraviolet photodetectors based on an LaAlO3 single crystal,” Opt. Lett. 34, 1675–1677 (2009).
[CrossRef] [PubMed]

2008

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93, 173505 (2008).
[CrossRef]

H. Jiang and T. Egawa, “Low-dark-current high-performance AlGaN solar-blind p-i-n photodiodes,” Jpn. J. Appl. Phys. 47, 1541–1543 (2008).
[CrossRef]

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
[CrossRef]

2006

Y. Koide, M. Liao, and J. Alvarez, “Thermally stable solar-blind diamond UV photodetector,” Diam. Rel. Mater. 15, 1962–1966 (2006).
[CrossRef]

W. S. Jahng, A. H. Francis, H. Moon, J. I. Nanos, and M. D. Curtis, “Is indium tin oxide a suitable electrode in organic solar cells? Photovoltaic properties of interfaces in organic p/n junction photodiodes,” Appl. Phys. Lett. 88, 093504 (2006).
[CrossRef]

2004

Y. Z. Chiou and J. J. Tang, “GaN photodetectors with transparent indium tin oxide electrodes,” Jpn. J. Appl. Phys. 43, 4146–4149 (2004).
[CrossRef]

2002

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1−xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80, 3754–3756 (2002).
[CrossRef]

P. W. Peacock and J. Robertson, “Band offsets and Schottky barrier heights of high dielectric constant oxides,” J. Appl. Phys. 92, 4712–4721 (2002).
[CrossRef]

2001

G. Z. Yang, H. B. Lu, F. Chen, T. Zhao, and Z. H. Chen, “Laser molecular beam epitaxy and characterization of perovskite oxide thin films,” J. Cryst. Growth 227, 929 (2001).
[CrossRef]

P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, “AlxGa1−xN for solar-blind UV detectors,” J. Cryst. Growth 231, 366–370 (2001).
[CrossRef]

Alvarez, J.

Y. Koide, M. Liao, and J. Alvarez, “Thermally stable solar-blind diamond UV photodetector,” Diam. Rel. Mater. 15, 1962–1966 (2006).
[CrossRef]

Barkad, H. A.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
[CrossRef]

Beck, A. L.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1−xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80, 3754–3756 (2002).
[CrossRef]

Benbakhti, B.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
[CrossRef]

BenMoussa, A.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
[CrossRef]

Bevilacqua, M.

M. Bevilacqua and R. B. Jackman, “Extreme sensitivity displayed by single crystal diamond deep ultraviolet photoconductive devices,” Appl. Phys. Lett. 95, 243501 (2009).
[CrossRef]

Campbell, J. C.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1−xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80, 3754–3756 (2002).
[CrossRef]

Chen, F.

G. Z. Yang, H. B. Lu, F. Chen, T. Zhao, and Z. H. Chen, “Laser molecular beam epitaxy and characterization of perovskite oxide thin films,” J. Cryst. Growth 227, 929 (2001).
[CrossRef]

Chen, Z. H.

G. Z. Yang, H. B. Lu, F. Chen, T. Zhao, and Z. H. Chen, “Laser molecular beam epitaxy and characterization of perovskite oxide thin films,” J. Cryst. Growth 227, 929 (2001).
[CrossRef]

Chi, P. F.

M. L. Lee, P. F. Chi, and J. K. Sheu, “Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio,” Appl. Phys. Lett. 94, 013512 (2009).
[CrossRef]

Chiou, Y. Z.

Y. Z. Chiou and J. J. Tang, “GaN photodetectors with transparent indium tin oxide electrodes,” Jpn. J. Appl. Phys. 43, 4146–4149 (2004).
[CrossRef]

Chong, Y. M.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
[CrossRef]

Chowdhury, U.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1−xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80, 3754–3756 (2002).
[CrossRef]

Collins, C. J.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1−xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80, 3754–3756 (2002).
[CrossRef]

Curtis, M. D.

W. S. Jahng, A. H. Francis, H. Moon, J. I. Nanos, and M. D. Curtis, “Is indium tin oxide a suitable electrode in organic solar cells? Photovoltaic properties of interfaces in organic p/n junction photodiodes,” Appl. Phys. Lett. 88, 093504 (2006).
[CrossRef]

De Jaeger, J.-C.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
[CrossRef]

Dupuis, R. D.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1−xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80, 3754–3756 (2002).
[CrossRef]

Egawa, T.

H. Jiang and T. Egawa, “Low-dark-current high-performance AlGaN solar-blind p-i-n photodiodes,” Jpn. J. Appl. Phys. 47, 1541–1543 (2008).
[CrossRef]

Fan, X. W.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93, 173505 (2008).
[CrossRef]

Francis, A. H.

W. S. Jahng, A. H. Francis, H. Moon, J. I. Nanos, and M. D. Curtis, “Is indium tin oxide a suitable electrode in organic solar cells? Photovoltaic properties of interfaces in organic p/n junction photodiodes,” Appl. Phys. Lett. 88, 093504 (2006).
[CrossRef]

Giordanengo, B.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
[CrossRef]

Guo, E. J.

E. J. Guo, J. Xing, H. B. Lu, K. J. Jin, J. Wen, and G. Z. Yang, “Ultraviolet fast-response photoelectric effects in LiTaO3single crystal,” J. Phys. D 43, 015402 (2010).
[CrossRef]

J. Xing, E. J. Guo, K. J. Jin, H. B. Lu, J. Wen, and G. Z. Yang, “Solar-blind deep-ultraviolet photodetectors based on an LaAlO3 single crystal,” Opt. Lett. 34, 1675–1677 (2009).
[CrossRef] [PubMed]

Hochedez, J.-F.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
[CrossRef]

Jackman, R. B.

M. Bevilacqua and R. B. Jackman, “Extreme sensitivity displayed by single crystal diamond deep ultraviolet photoconductive devices,” Appl. Phys. Lett. 95, 243501 (2009).
[CrossRef]

Jahng, W. S.

W. S. Jahng, A. H. Francis, H. Moon, J. I. Nanos, and M. D. Curtis, “Is indium tin oxide a suitable electrode in organic solar cells? Photovoltaic properties of interfaces in organic p/n junction photodiodes,” Appl. Phys. Lett. 88, 093504 (2006).
[CrossRef]

Jiang, D. Y.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93, 173505 (2008).
[CrossRef]

Jiang, H.

H. Jiang and T. Egawa, “Low-dark-current high-performance AlGaN solar-blind p-i-n photodiodes,” Jpn. J. Appl. Phys. 47, 1541–1543 (2008).
[CrossRef]

Jin, K. J.

E. J. Guo, J. Xing, H. B. Lu, K. J. Jin, J. Wen, and G. Z. Yang, “Ultraviolet fast-response photoelectric effects in LiTaO3single crystal,” J. Phys. D 43, 015402 (2010).
[CrossRef]

J. Xing, E. J. Guo, K. J. Jin, H. B. Lu, J. Wen, and G. Z. Yang, “Solar-blind deep-ultraviolet photodetectors based on an LaAlO3 single crystal,” Opt. Lett. 34, 1675–1677 (2009).
[CrossRef] [PubMed]

Ju, Z. G.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93, 173505 (2008).
[CrossRef]

Koide, Y.

Y. Koide, M. Liao, and J. Alvarez, “Thermally stable solar-blind diamond UV photodetector,” Diam. Rel. Mater. 15, 1962–1966 (2006).
[CrossRef]

Kung, P.

P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, “AlxGa1−xN for solar-blind UV detectors,” J. Cryst. Growth 231, 366–370 (2001).
[CrossRef]

Lee, M. L.

M. L. Lee, P. F. Chi, and J. K. Sheu, “Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio,” Appl. Phys. Lett. 94, 013512 (2009).
[CrossRef]

Lee, S. T.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
[CrossRef]

Liao, M.

Y. Koide, M. Liao, and J. Alvarez, “Thermally stable solar-blind diamond UV photodetector,” Diam. Rel. Mater. 15, 1962–1966 (2006).
[CrossRef]

Lu, H. B.

E. J. Guo, J. Xing, H. B. Lu, K. J. Jin, J. Wen, and G. Z. Yang, “Ultraviolet fast-response photoelectric effects in LiTaO3single crystal,” J. Phys. D 43, 015402 (2010).
[CrossRef]

J. Xing, E. J. Guo, K. J. Jin, H. B. Lu, J. Wen, and G. Z. Yang, “Solar-blind deep-ultraviolet photodetectors based on an LaAlO3 single crystal,” Opt. Lett. 34, 1675–1677 (2009).
[CrossRef] [PubMed]

G. Z. Yang, H. B. Lu, F. Chen, T. Zhao, and Z. H. Chen, “Laser molecular beam epitaxy and characterization of perovskite oxide thin films,” J. Cryst. Growth 227, 929 (2001).
[CrossRef]

Mattalah, M.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
[CrossRef]

McClintock, R.

P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, “AlxGa1−xN for solar-blind UV detectors,” J. Cryst. Growth 231, 366–370 (2001).
[CrossRef]

Mi, K.

P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, “AlxGa1−xN for solar-blind UV detectors,” J. Cryst. Growth 231, 366–370 (2001).
[CrossRef]

Moon, H.

W. S. Jahng, A. H. Francis, H. Moon, J. I. Nanos, and M. D. Curtis, “Is indium tin oxide a suitable electrode in organic solar cells? Photovoltaic properties of interfaces in organic p/n junction photodiodes,” Appl. Phys. Lett. 88, 093504 (2006).
[CrossRef]

Nanos, J. I.

W. S. Jahng, A. H. Francis, H. Moon, J. I. Nanos, and M. D. Curtis, “Is indium tin oxide a suitable electrode in organic solar cells? Photovoltaic properties of interfaces in organic p/n junction photodiodes,” Appl. Phys. Lett. 88, 093504 (2006).
[CrossRef]

Peacock, P. W.

P. W. Peacock and J. Robertson, “Band offsets and Schottky barrier heights of high dielectric constant oxides,” J. Appl. Phys. 92, 4712–4721 (2002).
[CrossRef]

Razeghi, M.

P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, “AlxGa1−xN for solar-blind UV detectors,” J. Cryst. Growth 231, 366–370 (2001).
[CrossRef]

Robertson, J.

P. W. Peacock and J. Robertson, “Band offsets and Schottky barrier heights of high dielectric constant oxides,” J. Appl. Phys. 92, 4712–4721 (2002).
[CrossRef]

Sandvik, P.

P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, “AlxGa1−xN for solar-blind UV detectors,” J. Cryst. Growth 231, 366–370 (2001).
[CrossRef]

Shahedipour, F.

P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, “AlxGa1−xN for solar-blind UV detectors,” J. Cryst. Growth 231, 366–370 (2001).
[CrossRef]

Shan, C. X.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93, 173505 (2008).
[CrossRef]

Shen, D. Z.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93, 173505 (2008).
[CrossRef]

Sheu, J. K.

M. L. Lee, P. F. Chi, and J. K. Sheu, “Photodetectors formed by an indium tin oxide/zinc oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio,” Appl. Phys. Lett. 94, 013512 (2009).
[CrossRef]

Soltani, A.

A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, “193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors,” Appl. Phys. Lett. 92, 053501 (2008).
[CrossRef]

Tang, J. J.

Y. Z. Chiou and J. J. Tang, “GaN photodetectors with transparent indium tin oxide electrodes,” Jpn. J. Appl. Phys. 43, 4146–4149 (2004).
[CrossRef]

Wen, J.

E. J. Guo, J. Xing, H. B. Lu, K. J. Jin, J. Wen, and G. Z. Yang, “Ultraviolet fast-response photoelectric effects in LiTaO3single crystal,” J. Phys. D 43, 015402 (2010).
[CrossRef]

J. Xing, E. J. Guo, K. J. Jin, H. B. Lu, J. Wen, and G. Z. Yang, “Solar-blind deep-ultraviolet photodetectors based on an LaAlO3 single crystal,” Opt. Lett. 34, 1675–1677 (2009).
[CrossRef] [PubMed]

Wong, M. M.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1−xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80, 3754–3756 (2002).
[CrossRef]

Xing, J.

E. J. Guo, J. Xing, H. B. Lu, K. J. Jin, J. Wen, and G. Z. Yang, “Ultraviolet fast-response photoelectric effects in LiTaO3single crystal,” J. Phys. D 43, 015402 (2010).
[CrossRef]

J. Xing, E. J. Guo, K. J. Jin, H. B. Lu, J. Wen, and G. Z. Yang, “Solar-blind deep-ultraviolet photodetectors based on an LaAlO3 single crystal,” Opt. Lett. 34, 1675–1677 (2009).
[CrossRef] [PubMed]

Yang, B.

C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, “Improved solar-blind detectivity using an AlxGa1−xN heterojunction p-i-n photodiode,” Appl. Phys. Lett. 80, 3754–3756 (2002).
[CrossRef]

Yang, G. Z.

E. J. Guo, J. Xing, H. B. Lu, K. J. Jin, J. Wen, and G. Z. Yang, “Ultraviolet fast-response photoelectric effects in LiTaO3single crystal,” J. Phys. D 43, 015402 (2010).
[CrossRef]

J. Xing, E. J. Guo, K. J. Jin, H. B. Lu, J. Wen, and G. Z. Yang, “Solar-blind deep-ultraviolet photodetectors based on an LaAlO3 single crystal,” Opt. Lett. 34, 1675–1677 (2009).
[CrossRef] [PubMed]

G. Z. Yang, H. B. Lu, F. Chen, T. Zhao, and Z. H. Chen, “Laser molecular beam epitaxy and characterization of perovskite oxide thin films,” J. Cryst. Growth 227, 929 (2001).
[CrossRef]

Yao, B.

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, “MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range,” Appl. Phys. Lett. 93, 173505 (2008).
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[CrossRef]

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[CrossRef]

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[CrossRef]

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[CrossRef]

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Opt. Lett.

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Figures (5)

Fig. 1
Fig. 1

Schematic diagram of ITO/LAO/Ag photodetector.

Fig. 2
Fig. 2

Typical XRD θ 2 θ scan curve of 100 nm ITO film on LAO substrate.

Fig. 3
Fig. 3

Bias dependence of the photocurrent responsivity for the three different photodetectors with 5, 20, and 100 nm ITO films under the irradiation of a D 2 lamp.

Fig. 4
Fig. 4

Optical transmittances of ITO films with the different thickness of 5, 20, and 100 nm . The inset shows the absorption spectrum of an LAO single crystal with 5 nm thick ITO film.

Fig. 5
Fig. 5

Power density dependence of the photocurrent for an ITO/LAO/Ag photodetector with 5 nm ITO film under the irradiation of a D 2 lamp at a 200 V bias. The inset shows the bias dependence of noise currents under the irradiation of sunlight at midday.

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