Abstract

We report highly efficient laser operation of praseodymium-doped LiYF4 in the green spectral range. The influence of the crystal length and pump light focusing on the laser performance has been studied. The pump radiation was delivered by InGaN laser diodes. Optimizing the setup for a 2.9mm long crys tal with a doping concentration of 0.5% led to an electric to green laser power conversion efficiency as high as 7.4%. With 500 and 1000mW of pump light power, output powers of 179 and 358mW have been reached, respectively. With respect to absorbed power, slope efficiencies of up to 60% have been achieved.

© 2010 Optical Society of America

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  1. E. Osiac, E. Heumann, A. Richter, G. Huber, W. Seelert, and A. Diening, “Red Pr3+:LiYF4 laser excited by 480nm optically pumped semiconductor laser,” in Conference on Lasers and Electro-Optics ’04, OSA Technical Digest Series (Optical Society of America, 2004), paper CFE2.
  2. H. Moench, “New markets and new light-sources for projection,” Proc. SPIE 6911, 69110Y (2008).
    [CrossRef]
  3. K. Okamoto, J. Kashiwagi, T. Tanaka, and M. I. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8nm,” Appl. Phys. Lett. 94, 071105 (2009).
    [CrossRef]
  4. D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauss, “500nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
    [CrossRef]
  5. T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
    [CrossRef]
  6. T. Sandrock, T. Danger, E. Heumann, G. Huber, and B. H. T. Chai, “Efficient continuous wave-laser emission of Pr3+-doped fluorides at room temperature,” Appl. Phys. B 58, 149–151 (1994).
    [CrossRef]
  7. A. Richter, E. Heumann, G. Huber, V. Ostroumov, and W. Seelert, “Power scaling of semiconductor laser pumped praseodymium lasers,” Opt. Express 15, 5172–5178 (2007).
    [CrossRef] [PubMed]
  8. G. Özen, O. Forte, and B. Di Bartolo, “Downconversion and upconversion dynamics in Pr-doped Y3Al5O12 crystals,” J. Appl. Phys. 97, 013510 (2005).
    [CrossRef]
  9. N. V. Kuleshov, A. S. Shinkevich, V. G. Shcherbitsky, V. P. Mikhailov, T. Danger, T. Sandrock, and G. Huber, “Luminescence and time-resolved excited state absorption measurements in Pr3+-doped La2Be2O5 and KGd(WO4)2 crystals,” Opt. Mater. 5, 111–118 (1996).
    [CrossRef]
  10. J. Hegarty, D. L. Huber, and W. M. Yen, “Fluorescence quenching by cross relaxation in LaF3:Pr⁡3+,” Phys. Rev. B 25, 5638–5645 (1982).
    [CrossRef]
  11. P. J. Deren, A. Bernarkiewicz, R. Maihou, and W. Strek, “On spectroscopic properties of the KYb(WO4)2:Pr3+ crystal,” Mol. Phys. 101, 951–960 (2003).
    [CrossRef]
  12. A.-R. Bellancourt, U. Mackens, H. Moench, and U. Weichmann, “Blue diode pumped solid state lasers for digital projection,” Laser Phys. 20, 643–648 (2010).
    [CrossRef]
  13. M. Strotkamp, T. Schwarz, and B. Jungbluth, “Efficient, green laser based on a blue-diode pumped rare-earth-doped fluoride crystal in an extremely short resonator,” Proc. SPIE 7578, 75780O (2010).
    [CrossRef]
  14. A. Richter, E. Heumann, E. Osiac, G. Huber, W. Seelert, and A. Diening, “Diode pumping of a continuous-wave Pr3+ doped LiYF4 laser,” Opt. Lett. 29, 2638–2640 (2004).
    [CrossRef] [PubMed]
  15. D. Findlay and R. A. Clay, “The measurement of internal losses in 4-level lasers,” Phys. Lett. 20, 277–278 (1966).
    [CrossRef]

2010 (2)

A.-R. Bellancourt, U. Mackens, H. Moench, and U. Weichmann, “Blue diode pumped solid state lasers for digital projection,” Laser Phys. 20, 643–648 (2010).
[CrossRef]

M. Strotkamp, T. Schwarz, and B. Jungbluth, “Efficient, green laser based on a blue-diode pumped rare-earth-doped fluoride crystal in an extremely short resonator,” Proc. SPIE 7578, 75780O (2010).
[CrossRef]

2009 (3)

K. Okamoto, J. Kashiwagi, T. Tanaka, and M. I. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8nm,” Appl. Phys. Lett. 94, 071105 (2009).
[CrossRef]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauss, “500nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[CrossRef]

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[CrossRef]

2008 (1)

H. Moench, “New markets and new light-sources for projection,” Proc. SPIE 6911, 69110Y (2008).
[CrossRef]

2007 (1)

2005 (1)

G. Özen, O. Forte, and B. Di Bartolo, “Downconversion and upconversion dynamics in Pr-doped Y3Al5O12 crystals,” J. Appl. Phys. 97, 013510 (2005).
[CrossRef]

2004 (1)

2003 (1)

P. J. Deren, A. Bernarkiewicz, R. Maihou, and W. Strek, “On spectroscopic properties of the KYb(WO4)2:Pr3+ crystal,” Mol. Phys. 101, 951–960 (2003).
[CrossRef]

1996 (1)

N. V. Kuleshov, A. S. Shinkevich, V. G. Shcherbitsky, V. P. Mikhailov, T. Danger, T. Sandrock, and G. Huber, “Luminescence and time-resolved excited state absorption measurements in Pr3+-doped La2Be2O5 and KGd(WO4)2 crystals,” Opt. Mater. 5, 111–118 (1996).
[CrossRef]

1994 (1)

T. Sandrock, T. Danger, E. Heumann, G. Huber, and B. H. T. Chai, “Efficient continuous wave-laser emission of Pr3+-doped fluorides at room temperature,” Appl. Phys. B 58, 149–151 (1994).
[CrossRef]

1982 (1)

J. Hegarty, D. L. Huber, and W. M. Yen, “Fluorescence quenching by cross relaxation in LaF3:Pr⁡3+,” Phys. Rev. B 25, 5638–5645 (1982).
[CrossRef]

1966 (1)

D. Findlay and R. A. Clay, “The measurement of internal losses in 4-level lasers,” Phys. Lett. 20, 277–278 (1966).
[CrossRef]

Avramescu, A.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauss, “500nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[CrossRef]

Bellancourt, A.-R.

A.-R. Bellancourt, U. Mackens, H. Moench, and U. Weichmann, “Blue diode pumped solid state lasers for digital projection,” Laser Phys. 20, 643–648 (2010).
[CrossRef]

Bernarkiewicz, A.

P. J. Deren, A. Bernarkiewicz, R. Maihou, and W. Strek, “On spectroscopic properties of the KYb(WO4)2:Pr3+ crystal,” Mol. Phys. 101, 951–960 (2003).
[CrossRef]

Breidenassel, A.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauss, “500nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[CrossRef]

Brüderl, G.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauss, “500nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[CrossRef]

Chai, B. H. T.

T. Sandrock, T. Danger, E. Heumann, G. Huber, and B. H. T. Chai, “Efficient continuous wave-laser emission of Pr3+-doped fluorides at room temperature,” Appl. Phys. B 58, 149–151 (1994).
[CrossRef]

Clay, R. A.

D. Findlay and R. A. Clay, “The measurement of internal losses in 4-level lasers,” Phys. Lett. 20, 277–278 (1966).
[CrossRef]

Danger, T.

N. V. Kuleshov, A. S. Shinkevich, V. G. Shcherbitsky, V. P. Mikhailov, T. Danger, T. Sandrock, and G. Huber, “Luminescence and time-resolved excited state absorption measurements in Pr3+-doped La2Be2O5 and KGd(WO4)2 crystals,” Opt. Mater. 5, 111–118 (1996).
[CrossRef]

T. Sandrock, T. Danger, E. Heumann, G. Huber, and B. H. T. Chai, “Efficient continuous wave-laser emission of Pr3+-doped fluorides at room temperature,” Appl. Phys. B 58, 149–151 (1994).
[CrossRef]

Deren, P. J.

P. J. Deren, A. Bernarkiewicz, R. Maihou, and W. Strek, “On spectroscopic properties of the KYb(WO4)2:Pr3+ crystal,” Mol. Phys. 101, 951–960 (2003).
[CrossRef]

Di Bartolo, B.

G. Özen, O. Forte, and B. Di Bartolo, “Downconversion and upconversion dynamics in Pr-doped Y3Al5O12 crystals,” J. Appl. Phys. 97, 013510 (2005).
[CrossRef]

Diening, A.

A. Richter, E. Heumann, E. Osiac, G. Huber, W. Seelert, and A. Diening, “Diode pumping of a continuous-wave Pr3+ doped LiYF4 laser,” Opt. Lett. 29, 2638–2640 (2004).
[CrossRef] [PubMed]

E. Osiac, E. Heumann, A. Richter, G. Huber, W. Seelert, and A. Diening, “Red Pr3+:LiYF4 laser excited by 480nm optically pumped semiconductor laser,” in Conference on Lasers and Electro-Optics ’04, OSA Technical Digest Series (Optical Society of America, 2004), paper CFE2.

Findlay, D.

D. Findlay and R. A. Clay, “The measurement of internal losses in 4-level lasers,” Phys. Lett. 20, 277–278 (1966).
[CrossRef]

Forte, O.

G. Özen, O. Forte, and B. Di Bartolo, “Downconversion and upconversion dynamics in Pr-doped Y3Al5O12 crystals,” J. Appl. Phys. 97, 013510 (2005).
[CrossRef]

Hegarty, J.

J. Hegarty, D. L. Huber, and W. M. Yen, “Fluorescence quenching by cross relaxation in LaF3:Pr⁡3+,” Phys. Rev. B 25, 5638–5645 (1982).
[CrossRef]

Heumann, E.

A. Richter, E. Heumann, G. Huber, V. Ostroumov, and W. Seelert, “Power scaling of semiconductor laser pumped praseodymium lasers,” Opt. Express 15, 5172–5178 (2007).
[CrossRef] [PubMed]

A. Richter, E. Heumann, E. Osiac, G. Huber, W. Seelert, and A. Diening, “Diode pumping of a continuous-wave Pr3+ doped LiYF4 laser,” Opt. Lett. 29, 2638–2640 (2004).
[CrossRef] [PubMed]

T. Sandrock, T. Danger, E. Heumann, G. Huber, and B. H. T. Chai, “Efficient continuous wave-laser emission of Pr3+-doped fluorides at room temperature,” Appl. Phys. B 58, 149–151 (1994).
[CrossRef]

E. Osiac, E. Heumann, A. Richter, G. Huber, W. Seelert, and A. Diening, “Red Pr3+:LiYF4 laser excited by 480nm optically pumped semiconductor laser,” in Conference on Lasers and Electro-Optics ’04, OSA Technical Digest Series (Optical Society of America, 2004), paper CFE2.

Huber, D. L.

J. Hegarty, D. L. Huber, and W. M. Yen, “Fluorescence quenching by cross relaxation in LaF3:Pr⁡3+,” Phys. Rev. B 25, 5638–5645 (1982).
[CrossRef]

Huber, G.

A. Richter, E. Heumann, G. Huber, V. Ostroumov, and W. Seelert, “Power scaling of semiconductor laser pumped praseodymium lasers,” Opt. Express 15, 5172–5178 (2007).
[CrossRef] [PubMed]

A. Richter, E. Heumann, E. Osiac, G. Huber, W. Seelert, and A. Diening, “Diode pumping of a continuous-wave Pr3+ doped LiYF4 laser,” Opt. Lett. 29, 2638–2640 (2004).
[CrossRef] [PubMed]

N. V. Kuleshov, A. S. Shinkevich, V. G. Shcherbitsky, V. P. Mikhailov, T. Danger, T. Sandrock, and G. Huber, “Luminescence and time-resolved excited state absorption measurements in Pr3+-doped La2Be2O5 and KGd(WO4)2 crystals,” Opt. Mater. 5, 111–118 (1996).
[CrossRef]

T. Sandrock, T. Danger, E. Heumann, G. Huber, and B. H. T. Chai, “Efficient continuous wave-laser emission of Pr3+-doped fluorides at room temperature,” Appl. Phys. B 58, 149–151 (1994).
[CrossRef]

E. Osiac, E. Heumann, A. Richter, G. Huber, W. Seelert, and A. Diening, “Red Pr3+:LiYF4 laser excited by 480nm optically pumped semiconductor laser,” in Conference on Lasers and Electro-Optics ’04, OSA Technical Digest Series (Optical Society of America, 2004), paper CFE2.

Jungbluth, B.

M. Strotkamp, T. Schwarz, and B. Jungbluth, “Efficient, green laser based on a blue-diode pumped rare-earth-doped fluoride crystal in an extremely short resonator,” Proc. SPIE 7578, 75780O (2010).
[CrossRef]

Kashiwagi, J.

K. Okamoto, J. Kashiwagi, T. Tanaka, and M. I. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8nm,” Appl. Phys. Lett. 94, 071105 (2009).
[CrossRef]

Kozaki, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[CrossRef]

Kubota, M. I.

K. Okamoto, J. Kashiwagi, T. Tanaka, and M. I. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8nm,” Appl. Phys. Lett. 94, 071105 (2009).
[CrossRef]

Kuleshov, N. V.

N. V. Kuleshov, A. S. Shinkevich, V. G. Shcherbitsky, V. P. Mikhailov, T. Danger, T. Sandrock, and G. Huber, “Luminescence and time-resolved excited state absorption measurements in Pr3+-doped La2Be2O5 and KGd(WO4)2 crystals,” Opt. Mater. 5, 111–118 (1996).
[CrossRef]

Lutgen, S.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauss, “500nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[CrossRef]

Mackens, U.

A.-R. Bellancourt, U. Mackens, H. Moench, and U. Weichmann, “Blue diode pumped solid state lasers for digital projection,” Laser Phys. 20, 643–648 (2010).
[CrossRef]

Maihou, R.

P. J. Deren, A. Bernarkiewicz, R. Maihou, and W. Strek, “On spectroscopic properties of the KYb(WO4)2:Pr3+ crystal,” Mol. Phys. 101, 951–960 (2003).
[CrossRef]

Masui, S.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[CrossRef]

Mikhailov, V. P.

N. V. Kuleshov, A. S. Shinkevich, V. G. Shcherbitsky, V. P. Mikhailov, T. Danger, T. Sandrock, and G. Huber, “Luminescence and time-resolved excited state absorption measurements in Pr3+-doped La2Be2O5 and KGd(WO4)2 crystals,” Opt. Mater. 5, 111–118 (1996).
[CrossRef]

Miyoshi, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[CrossRef]

Moench, H.

A.-R. Bellancourt, U. Mackens, H. Moench, and U. Weichmann, “Blue diode pumped solid state lasers for digital projection,” Laser Phys. 20, 643–648 (2010).
[CrossRef]

H. Moench, “New markets and new light-sources for projection,” Proc. SPIE 6911, 69110Y (2008).
[CrossRef]

Mukai, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[CrossRef]

Nagahama, S.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[CrossRef]

Okada, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[CrossRef]

Okamoto, K.

K. Okamoto, J. Kashiwagi, T. Tanaka, and M. I. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8nm,” Appl. Phys. Lett. 94, 071105 (2009).
[CrossRef]

Osiac, E.

A. Richter, E. Heumann, E. Osiac, G. Huber, W. Seelert, and A. Diening, “Diode pumping of a continuous-wave Pr3+ doped LiYF4 laser,” Opt. Lett. 29, 2638–2640 (2004).
[CrossRef] [PubMed]

E. Osiac, E. Heumann, A. Richter, G. Huber, W. Seelert, and A. Diening, “Red Pr3+:LiYF4 laser excited by 480nm optically pumped semiconductor laser,” in Conference on Lasers and Electro-Optics ’04, OSA Technical Digest Series (Optical Society of America, 2004), paper CFE2.

Ostroumov, V.

Özen, G.

G. Özen, O. Forte, and B. Di Bartolo, “Downconversion and upconversion dynamics in Pr-doped Y3Al5O12 crystals,” J. Appl. Phys. 97, 013510 (2005).
[CrossRef]

Queren, D.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauss, “500nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[CrossRef]

Richter, A.

A. Richter, E. Heumann, G. Huber, V. Ostroumov, and W. Seelert, “Power scaling of semiconductor laser pumped praseodymium lasers,” Opt. Express 15, 5172–5178 (2007).
[CrossRef] [PubMed]

A. Richter, E. Heumann, E. Osiac, G. Huber, W. Seelert, and A. Diening, “Diode pumping of a continuous-wave Pr3+ doped LiYF4 laser,” Opt. Lett. 29, 2638–2640 (2004).
[CrossRef] [PubMed]

E. Osiac, E. Heumann, A. Richter, G. Huber, W. Seelert, and A. Diening, “Red Pr3+:LiYF4 laser excited by 480nm optically pumped semiconductor laser,” in Conference on Lasers and Electro-Optics ’04, OSA Technical Digest Series (Optical Society of America, 2004), paper CFE2.

Sandrock, T.

N. V. Kuleshov, A. S. Shinkevich, V. G. Shcherbitsky, V. P. Mikhailov, T. Danger, T. Sandrock, and G. Huber, “Luminescence and time-resolved excited state absorption measurements in Pr3+-doped La2Be2O5 and KGd(WO4)2 crystals,” Opt. Mater. 5, 111–118 (1996).
[CrossRef]

T. Sandrock, T. Danger, E. Heumann, G. Huber, and B. H. T. Chai, “Efficient continuous wave-laser emission of Pr3+-doped fluorides at room temperature,” Appl. Phys. B 58, 149–151 (1994).
[CrossRef]

Schillgalies, M.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauss, “500nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[CrossRef]

Schwarz, T.

M. Strotkamp, T. Schwarz, and B. Jungbluth, “Efficient, green laser based on a blue-diode pumped rare-earth-doped fluoride crystal in an extremely short resonator,” Proc. SPIE 7578, 75780O (2010).
[CrossRef]

Seelert, W.

A. Richter, E. Heumann, G. Huber, V. Ostroumov, and W. Seelert, “Power scaling of semiconductor laser pumped praseodymium lasers,” Opt. Express 15, 5172–5178 (2007).
[CrossRef] [PubMed]

A. Richter, E. Heumann, E. Osiac, G. Huber, W. Seelert, and A. Diening, “Diode pumping of a continuous-wave Pr3+ doped LiYF4 laser,” Opt. Lett. 29, 2638–2640 (2004).
[CrossRef] [PubMed]

E. Osiac, E. Heumann, A. Richter, G. Huber, W. Seelert, and A. Diening, “Red Pr3+:LiYF4 laser excited by 480nm optically pumped semiconductor laser,” in Conference on Lasers and Electro-Optics ’04, OSA Technical Digest Series (Optical Society of America, 2004), paper CFE2.

Shcherbitsky, V. G.

N. V. Kuleshov, A. S. Shinkevich, V. G. Shcherbitsky, V. P. Mikhailov, T. Danger, T. Sandrock, and G. Huber, “Luminescence and time-resolved excited state absorption measurements in Pr3+-doped La2Be2O5 and KGd(WO4)2 crystals,” Opt. Mater. 5, 111–118 (1996).
[CrossRef]

Shinkevich, A. S.

N. V. Kuleshov, A. S. Shinkevich, V. G. Shcherbitsky, V. P. Mikhailov, T. Danger, T. Sandrock, and G. Huber, “Luminescence and time-resolved excited state absorption measurements in Pr3+-doped La2Be2O5 and KGd(WO4)2 crystals,” Opt. Mater. 5, 111–118 (1996).
[CrossRef]

Strauss, U.

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauss, “500nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[CrossRef]

Strek, W.

P. J. Deren, A. Bernarkiewicz, R. Maihou, and W. Strek, “On spectroscopic properties of the KYb(WO4)2:Pr3+ crystal,” Mol. Phys. 101, 951–960 (2003).
[CrossRef]

Strotkamp, M.

M. Strotkamp, T. Schwarz, and B. Jungbluth, “Efficient, green laser based on a blue-diode pumped rare-earth-doped fluoride crystal in an extremely short resonator,” Proc. SPIE 7578, 75780O (2010).
[CrossRef]

Tanaka, T.

K. Okamoto, J. Kashiwagi, T. Tanaka, and M. I. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8nm,” Appl. Phys. Lett. 94, 071105 (2009).
[CrossRef]

Weichmann, U.

A.-R. Bellancourt, U. Mackens, H. Moench, and U. Weichmann, “Blue diode pumped solid state lasers for digital projection,” Laser Phys. 20, 643–648 (2010).
[CrossRef]

Yanamoto, T.

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[CrossRef]

Yen, W. M.

J. Hegarty, D. L. Huber, and W. M. Yen, “Fluorescence quenching by cross relaxation in LaF3:Pr⁡3+,” Phys. Rev. B 25, 5638–5645 (1982).
[CrossRef]

Appl. Phys. B (1)

T. Sandrock, T. Danger, E. Heumann, G. Huber, and B. H. T. Chai, “Efficient continuous wave-laser emission of Pr3+-doped fluorides at room temperature,” Appl. Phys. B 58, 149–151 (1994).
[CrossRef]

Appl. Phys. Express (1)

T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, “510–515nm InGaN-based green laser diodes on c-plane GaN substrate,” Appl. Phys. Express 2, 062201 (2009).
[CrossRef]

Appl. Phys. Lett. (2)

K. Okamoto, J. Kashiwagi, T. Tanaka, and M. I. Kubota, “Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8nm,” Appl. Phys. Lett. 94, 071105 (2009).
[CrossRef]

D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauss, “500nm electrically driven InGaN based laser diodes,” Appl. Phys. Lett. 94, 081119 (2009).
[CrossRef]

J. Appl. Phys. (1)

G. Özen, O. Forte, and B. Di Bartolo, “Downconversion and upconversion dynamics in Pr-doped Y3Al5O12 crystals,” J. Appl. Phys. 97, 013510 (2005).
[CrossRef]

Laser Phys. (1)

A.-R. Bellancourt, U. Mackens, H. Moench, and U. Weichmann, “Blue diode pumped solid state lasers for digital projection,” Laser Phys. 20, 643–648 (2010).
[CrossRef]

Mol. Phys. (1)

P. J. Deren, A. Bernarkiewicz, R. Maihou, and W. Strek, “On spectroscopic properties of the KYb(WO4)2:Pr3+ crystal,” Mol. Phys. 101, 951–960 (2003).
[CrossRef]

Opt. Express (1)

Opt. Lett. (1)

Opt. Mater. (1)

N. V. Kuleshov, A. S. Shinkevich, V. G. Shcherbitsky, V. P. Mikhailov, T. Danger, T. Sandrock, and G. Huber, “Luminescence and time-resolved excited state absorption measurements in Pr3+-doped La2Be2O5 and KGd(WO4)2 crystals,” Opt. Mater. 5, 111–118 (1996).
[CrossRef]

Phys. Lett. (1)

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Phys. Rev. B (1)

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Other (1)

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Figures (5)

Fig. 1
Fig. 1

Energy level scheme of Pr with transitions in the visible spectral region. Black arrows indicate possible cross-relaxation processes.

Fig. 2
Fig. 2

Laser setup for the bDPSSL emitting at 523 nm .

Fig. 3
Fig. 3

(a) Green laser output power versus absorbed pump power for the 5 mm long Pr:YLF crystal and (b) the 2.9 mm Pr:YLF crystal at different reflectivities of the output coupler (OC).

Fig. 4
Fig. 4

(a) Power scaled green laser output power versus absorbed pump power for a 5 mm long Pr:YLF crystal and (b) a 2.9 mm Pr:YLF crystal using a 1 W diode as pump source.

Fig. 5
Fig. 5

Output power obtained with T = 1 % output mirrors with respect to absorbed pump power for different pump diodes and crystal lengths.

Tables (1)

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Table 1 Results and Operational Parameters of the Laser Experiments with T = 1 %

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