Abstract

We systematically study ultraviolet laser-induced ultrafast photovoltaic effect in miscut LaSrAlO4 single crystal wafers with different thicknesses at ambient temperature without any applied bias. An open- circuit photovoltage (PV) is obtained when the wafer is irradiated by a 248nm laser pulse of 20ns duration. With the decrease of crystal thickness, the peak PV increased to a maximum of 2.66mV at 340μm and then decreased to 1.3mV at 155μm. Meanwhile, the 10%–90% rise time of photovoltaic responses declines gradually. The inner mechanism of the present thickness-dependent photovoltaic response is discussed.

© 2010 Optical Society of America

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