Abstract

The applicability of layers of ion-implanted polymethyl methacrylate (PMMA) for beam splitting of laser light at the telecommunications wavelength of 1.55μm is examined. Bulk PMMA is studied, subjected to low-energy (50keV) silicon ion implantation at various ion fluences in the range from 1014 to 1017cm2. The formed ultrathin near-surface ion-implanted layer of a thickness of about 100nm, buried in a depth of 100nm, can be used to split (or combine) laser beams at 1.55μm with a low absorption loss.

© 2010 Optical Society of America

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