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Low-loss silicon-on-insulator shallow-ridge TE and TM waveguides formed using thermal oxidation

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Abstract

A thermal oxidation fabrication technique is employed to form low-loss high-index-contrast silicon shallow-ridge waveguides in silicon-on-insulator (SOI) with maximally tight vertical confinement. Drop-port responses from weakly coupled ring resonators demonstrate propagation losses below 0.36dB/cm for TE modes. This technique is also combined with “magic width” designs mitigating severe lateral radiation leakage for TM modes to achieve propagation loss values of 0.94dB/cm. We discuss the fabrication process utilized to form these low-loss waveguides and implications for sensor devices in particular.

© 2009 Optical Society of America

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