We fabricated vertical cavity surface emitting lasers (VCSELs) and resonant-cavity-enhanced photodetectors (RCE-PDs) with GaAs/AlGaAs distributed Bragg reflectors (DBRs), operating at , based on an intracavity-contacted structure. The top-DBR mesa diameter of the VCSELs was optimized to in terms of slope efficiency, differential series resistance, and bandwidth. For VCSELs with an oxide aperture of and a top-DBR mesa diameter of , the threshold current was about , exhibiting maximum output power of (at ) with good uniformity. The effect of the overetching in the outermost layer of RCE-PDs on the device performance was also investigated. For RCE-PDs based on the VCSEL structure, a peak responsivity of (at ) with a spectral width of and a dark current of under a bias voltage of at was obtained. The maximum bandwidths of with a modulation current efficiency factor of at and at were achieved for VCSELs and RCE-PDs, respectively.
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