Abstract

We fabricated vertical cavity surface emitting lasers (VCSELs) and resonant-cavity-enhanced photodetectors (RCE-PDs) with GaAs/AlGaAs distributed Bragg reflectors (DBRs), operating at λ980nm, based on an intracavity-contacted structure. The top-DBR mesa diameter of the VCSELs was optimized to 18μm in terms of slope efficiency, differential series resistance, and 3dB bandwidth. For VCSELs with an oxide aperture of 4.5μm and a top-DBR mesa diameter of 18μm, the threshold current was about 1.2mA, exhibiting maximum output power of 3.49mW (at 20°C) with good uniformity. The effect of the overetching in the outermost layer of RCE-PDs on the device performance was also investigated. For RCE-PDs based on the VCSEL structure, a peak responsivity of 0.44A/W (at λ979.7nm) with a spectral width of 3nm and a dark current of 68pA under a bias voltage of 5V at 20°C was obtained. The maximum 3dB bandwidths of 11.5GHz with a modulation current efficiency factor of 5.6GHz/mA1/2 at 7mA and 9GHz at 7V were achieved for VCSELs and RCE-PDs, respectively.

© 2009 Optical Society of America

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