Abstract

A linear measurement model of lithographic projection lens aberrations is studied numerically based on the Hopkins theory of partially-coherent imaging and positive resist optical lithography (PROLITH) simulation. In this linearity model, the correlation between the mark’s structure and its sensitivities to aberrations is analyzed. A method to design a mark with high sensitivity is proved and declared. By use of this method, a translational-symmetry alternating phase shifting mask (Alt-PSM) grating mark is redesigned with all of the even orders, ±3rd and ±5th order diffraction light missing. In the evaluation simulation, the measurement accuracies of aberrations prove to be enhanced apparently by use of the redesigned mark instead of the old ones.

© 2009 Optical Society of America

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