Abstract

A highly UV-transparent metal microgrid was prepared and employed as the front electrode in a sandwich-structured ultraviolet (UV) photodetector using TiO2 thin film as the semiconductor layer. The photo-generated charger carriers travel a shorter distance before reaching the electrodes in comparison with a photodetector using large-spaced interdigitated metal electrodes (where distance between fingers is several to tens of micrometers) on the surface of the semiconductor film. This photodetector responds to UV light irradiation, and the photocurrent intensity increases linearly with the irradiation intensity below 0.2mW/cm2.

© 2009 Optical Society of America

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  1. M. Razeghi, “Short-wavelength solar-blind detectors--status, prospects, and markets,” Proc. IEEE 90, 1006-1014 (2002).
    [CrossRef]
  2. M. Gökkavas, S. Butun, T. Tut, N. Biyikli, and E. Ozbay, “AlGaN-based high-performance metal-semiconductor-metal photodetectors,” Photon. Nanostr. Fundam. Appl. 5, 53-62(2007).
    [CrossRef]
  3. S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth 293, 43-47 (2006).
    [CrossRef]
  4. T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, “ZnO MSM photodetectors with Ru contact electrodes,” J. Cryst. Growth 281, 513-517 (2005).
    [CrossRef]
  5. S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, “ZnO Schottky ultraviolet photodetectors,” J. Cryst. Growth 225, 110-113 (2001).
    [CrossRef]
  6. S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, and X. L. Du, “ZnO ultraviolet photodiodes with Pd contact electrodes,” Acta Mater. 55, 329-333 (2007).
    [CrossRef]
  7. H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
    [CrossRef]
  8. J. M. Liu, Y. B. Xia, L. J. Wang, Q. F. Su, and W. M. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300, 353-357 (2007).
    [CrossRef]
  9. W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, and T. Venkatesana, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787-2789 (2001).
    [CrossRef]
  10. J. Suehiro, N. Nakagawa, S. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, “Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor,” Nanotechnology 17, 2567-2573(2006).
    [CrossRef] [PubMed]
  11. S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diam. Relat. Mater. 6, 361-366 (1997).
    [CrossRef]
  12. S. Salvatori, M. C. Rossi, F. Galluzzi, and E. Pace, “Solar-blind UV-photodetector based on polycrystalline diamond films: basic design principle and comparison with experimental results,” Mater. Sci. Eng. B46, 105-111 (1997).
    [CrossRef]
  13. S. Y. Chou, Y. Liu, and P. B. Fischer, “Tera-hertz GaAs metal-semiconductor-metal photodetectors with 25 nm finger spacing and finger width,” Appl. Phys. Lett. 61, 477-479(1992).
    [CrossRef]
  14. E. Lefeuvre, J. Achard, M. C. Castex, H. Schneider, C. Beuille, and A. Tardieu, “Bulk photoconductivity of CVD diamond films for UV and XUV detection,” Diamond Relat. Mater. 12, 642-646 (2003).
    [CrossRef]
  15. S. Yagi and S. Suzuki, “Effects of Mg doping on photoelectrical properties of hydrogenated GaN films grown at 380 °C,” Appl. Phys. Lett. 78, 2166-2168 (2001).
    [CrossRef]
  16. F. Pan, J. Y. Z., C. Cai, and T. M. Wang, “Rapid fabrication of large-area colloidal crystal monolayers by a vortical surface method,” Langmuir 22, 7101-7104 (2006).
    [CrossRef] [PubMed]
  17. K.-H. Wu and C.-J. Huang, “Nano-particled titaniun-oxide thin-films for ultra-violet optical-sensing applications,” in Proceedings of the IEEE Conference on Electron Devices and Solid-State Circuits, Vol. 1-2 (IEEE, 2007), pp. 663-664.
    [CrossRef]

2007 (4)

M. Gökkavas, S. Butun, T. Tut, N. Biyikli, and E. Ozbay, “AlGaN-based high-performance metal-semiconductor-metal photodetectors,” Photon. Nanostr. Fundam. Appl. 5, 53-62(2007).
[CrossRef]

S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, and X. L. Du, “ZnO ultraviolet photodiodes with Pd contact electrodes,” Acta Mater. 55, 329-333 (2007).
[CrossRef]

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

J. M. Liu, Y. B. Xia, L. J. Wang, Q. F. Su, and W. M. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300, 353-357 (2007).
[CrossRef]

2006 (3)

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth 293, 43-47 (2006).
[CrossRef]

J. Suehiro, N. Nakagawa, S. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, “Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor,” Nanotechnology 17, 2567-2573(2006).
[CrossRef] [PubMed]

F. Pan, J. Y. Z., C. Cai, and T. M. Wang, “Rapid fabrication of large-area colloidal crystal monolayers by a vortical surface method,” Langmuir 22, 7101-7104 (2006).
[CrossRef] [PubMed]

2005 (1)

T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, “ZnO MSM photodetectors with Ru contact electrodes,” J. Cryst. Growth 281, 513-517 (2005).
[CrossRef]

2003 (1)

E. Lefeuvre, J. Achard, M. C. Castex, H. Schneider, C. Beuille, and A. Tardieu, “Bulk photoconductivity of CVD diamond films for UV and XUV detection,” Diamond Relat. Mater. 12, 642-646 (2003).
[CrossRef]

2002 (1)

M. Razeghi, “Short-wavelength solar-blind detectors--status, prospects, and markets,” Proc. IEEE 90, 1006-1014 (2002).
[CrossRef]

2001 (3)

S. Yagi and S. Suzuki, “Effects of Mg doping on photoelectrical properties of hydrogenated GaN films grown at 380 °C,” Appl. Phys. Lett. 78, 2166-2168 (2001).
[CrossRef]

S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, “ZnO Schottky ultraviolet photodetectors,” J. Cryst. Growth 225, 110-113 (2001).
[CrossRef]

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, and T. Venkatesana, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787-2789 (2001).
[CrossRef]

1997 (2)

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diam. Relat. Mater. 6, 361-366 (1997).
[CrossRef]

S. Salvatori, M. C. Rossi, F. Galluzzi, and E. Pace, “Solar-blind UV-photodetector based on polycrystalline diamond films: basic design principle and comparison with experimental results,” Mater. Sci. Eng. B46, 105-111 (1997).
[CrossRef]

1992 (1)

S. Y. Chou, Y. Liu, and P. B. Fischer, “Tera-hertz GaAs metal-semiconductor-metal photodetectors with 25 nm finger spacing and finger width,” Appl. Phys. Lett. 61, 477-479(1992).
[CrossRef]

Achard, J.

E. Lefeuvre, J. Achard, M. C. Castex, H. Schneider, C. Beuille, and A. Tardieu, “Bulk photoconductivity of CVD diamond films for UV and XUV detection,” Diamond Relat. Mater. 12, 642-646 (2003).
[CrossRef]

Beuille, C.

E. Lefeuvre, J. Achard, M. C. Castex, H. Schneider, C. Beuille, and A. Tardieu, “Bulk photoconductivity of CVD diamond films for UV and XUV detection,” Diamond Relat. Mater. 12, 642-646 (2003).
[CrossRef]

Biyikli, N.

M. Gökkavas, S. Butun, T. Tut, N. Biyikli, and E. Ozbay, “AlGaN-based high-performance metal-semiconductor-metal photodetectors,” Photon. Nanostr. Fundam. Appl. 5, 53-62(2007).
[CrossRef]

Butun, S.

M. Gökkavas, S. Butun, T. Tut, N. Biyikli, and E. Ozbay, “AlGaN-based high-performance metal-semiconductor-metal photodetectors,” Photon. Nanostr. Fundam. Appl. 5, 53-62(2007).
[CrossRef]

Cai, C.

F. Pan, J. Y. Z., C. Cai, and T. M. Wang, “Rapid fabrication of large-area colloidal crystal monolayers by a vortical surface method,” Langmuir 22, 7101-7104 (2006).
[CrossRef] [PubMed]

Castex, M. C.

E. Lefeuvre, J. Achard, M. C. Castex, H. Schneider, C. Beuille, and A. Tardieu, “Bulk photoconductivity of CVD diamond films for UV and XUV detection,” Diamond Relat. Mater. 12, 642-646 (2003).
[CrossRef]

Chang, S. J.

S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, and X. L. Du, “ZnO ultraviolet photodiodes with Pd contact electrodes,” Acta Mater. 55, 329-333 (2007).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth 293, 43-47 (2006).
[CrossRef]

T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, “ZnO MSM photodetectors with Ru contact electrodes,” J. Cryst. Growth 281, 513-517 (2005).
[CrossRef]

Chen, W.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Choopun, S.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, and T. Venkatesana, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787-2789 (2001).
[CrossRef]

Chou, S. Y.

S. Y. Chou, Y. Liu, and P. B. Fischer, “Tera-hertz GaAs metal-semiconductor-metal photodetectors with 25 nm finger spacing and finger width,” Appl. Phys. Lett. 61, 477-479(1992).
[CrossRef]

Du, X. L.

S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, and X. L. Du, “ZnO ultraviolet photodiodes with Pd contact electrodes,” Acta Mater. 55, 329-333 (2007).
[CrossRef]

Fang, T. H.

S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, and X. L. Du, “ZnO ultraviolet photodiodes with Pd contact electrodes,” Acta Mater. 55, 329-333 (2007).
[CrossRef]

Fischer, P. B.

S. Y. Chou, Y. Liu, and P. B. Fischer, “Tera-hertz GaAs metal-semiconductor-metal photodetectors with 25 nm finger spacing and finger width,” Appl. Phys. Lett. 61, 477-479(1992).
[CrossRef]

Fujita, M.

T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, “ZnO MSM photodetectors with Ru contact electrodes,” J. Cryst. Growth 281, 513-517 (2005).
[CrossRef]

Galluzzi, F.

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diam. Relat. Mater. 6, 361-366 (1997).
[CrossRef]

S. Salvatori, M. C. Rossi, F. Galluzzi, and E. Pace, “Solar-blind UV-photodetector based on polycrystalline diamond films: basic design principle and comparison with experimental results,” Mater. Sci. Eng. B46, 105-111 (1997).
[CrossRef]

Gökkavas, M.

M. Gökkavas, S. Butun, T. Tut, N. Biyikli, and E. Ozbay, “AlGaN-based high-performance metal-semiconductor-metal photodetectors,” Photon. Nanostr. Fundam. Appl. 5, 53-62(2007).
[CrossRef]

Hara, M.

J. Suehiro, N. Nakagawa, S. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, “Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor,” Nanotechnology 17, 2567-2573(2006).
[CrossRef] [PubMed]

Hidaka, S.

J. Suehiro, N. Nakagawa, S. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, “Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor,” Nanotechnology 17, 2567-2573(2006).
[CrossRef] [PubMed]

Higashihata, M.

J. Suehiro, N. Nakagawa, S. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, “Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor,” Nanotechnology 17, 2567-2573(2006).
[CrossRef] [PubMed]

Horikoshi, Y.

T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, “ZnO MSM photodetectors with Ru contact electrodes,” J. Cryst. Growth 281, 513-517 (2005).
[CrossRef]

Huang, B. R.

T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, “ZnO MSM photodetectors with Ru contact electrodes,” J. Cryst. Growth 281, 513-517 (2005).
[CrossRef]

Huang, C.-J.

K.-H. Wu and C.-J. Huang, “Nano-particled titaniun-oxide thin-films for ultra-violet optical-sensing applications,” in Proceedings of the IEEE Conference on Electron Devices and Solid-State Circuits, Vol. 1-2 (IEEE, 2007), pp. 663-664.
[CrossRef]

Huo, Z.

S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, “ZnO Schottky ultraviolet photodetectors,” J. Cryst. Growth 225, 110-113 (2001).
[CrossRef]

Imasaka, K.

J. Suehiro, N. Nakagawa, S. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, “Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor,” Nanotechnology 17, 2567-2573(2006).
[CrossRef] [PubMed]

Ji, L. W.

S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, and X. L. Du, “ZnO ultraviolet photodiodes with Pd contact electrodes,” Acta Mater. 55, 329-333 (2007).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth 293, 43-47 (2006).
[CrossRef]

Kong, X.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Lefeuvre, E.

E. Lefeuvre, J. Achard, M. C. Castex, H. Schneider, C. Beuille, and A. Tardieu, “Bulk photoconductivity of CVD diamond films for UV and XUV detection,” Diamond Relat. Mater. 12, 642-646 (2003).
[CrossRef]

Liang, S.

S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, “ZnO Schottky ultraviolet photodetectors,” J. Cryst. Growth 225, 110-113 (2001).
[CrossRef]

Lin, T. K.

T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, “ZnO MSM photodetectors with Ru contact electrodes,” J. Cryst. Growth 281, 513-517 (2005).
[CrossRef]

Liu, C.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Liu, J. M.

J. M. Liu, Y. B. Xia, L. J. Wang, Q. F. Su, and W. M. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300, 353-357 (2007).
[CrossRef]

Liu, Y.

S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, “ZnO Schottky ultraviolet photodetectors,” J. Cryst. Growth 225, 110-113 (2001).
[CrossRef]

S. Y. Chou, Y. Liu, and P. B. Fischer, “Tera-hertz GaAs metal-semiconductor-metal photodetectors with 25 nm finger spacing and finger width,” Appl. Phys. Lett. 61, 477-479(1992).
[CrossRef]

Liu, Z.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Lu, Y.

S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, “ZnO Schottky ultraviolet photodetectors,” J. Cryst. Growth 225, 110-113 (2001).
[CrossRef]

Nakagawa, N.

J. Suehiro, N. Nakagawa, S. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, “Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor,” Nanotechnology 17, 2567-2573(2006).
[CrossRef] [PubMed]

Okada, T.

J. Suehiro, N. Nakagawa, S. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, “Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor,” Nanotechnology 17, 2567-2573(2006).
[CrossRef] [PubMed]

Ozbay, E.

M. Gökkavas, S. Butun, T. Tut, N. Biyikli, and E. Ozbay, “AlGaN-based high-performance metal-semiconductor-metal photodetectors,” Photon. Nanostr. Fundam. Appl. 5, 53-62(2007).
[CrossRef]

Pace, E.

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diam. Relat. Mater. 6, 361-366 (1997).
[CrossRef]

S. Salvatori, M. C. Rossi, F. Galluzzi, and E. Pace, “Solar-blind UV-photodetector based on polycrystalline diamond films: basic design principle and comparison with experimental results,” Mater. Sci. Eng. B46, 105-111 (1997).
[CrossRef]

Pan, F.

F. Pan, J. Y. Z., C. Cai, and T. M. Wang, “Rapid fabrication of large-area colloidal crystal monolayers by a vortical surface method,” Langmuir 22, 7101-7104 (2006).
[CrossRef] [PubMed]

Razeghi, M.

M. Razeghi, “Short-wavelength solar-blind detectors--status, prospects, and markets,” Proc. IEEE 90, 1006-1014 (2002).
[CrossRef]

Rossi, M. C.

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diam. Relat. Mater. 6, 361-366 (1997).
[CrossRef]

S. Salvatori, M. C. Rossi, F. Galluzzi, and E. Pace, “Solar-blind UV-photodetector based on polycrystalline diamond films: basic design principle and comparison with experimental results,” Mater. Sci. Eng. B46, 105-111 (1997).
[CrossRef]

Salvatori, S.

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diam. Relat. Mater. 6, 361-366 (1997).
[CrossRef]

S. Salvatori, M. C. Rossi, F. Galluzzi, and E. Pace, “Solar-blind UV-photodetector based on polycrystalline diamond films: basic design principle and comparison with experimental results,” Mater. Sci. Eng. B46, 105-111 (1997).
[CrossRef]

Schneider, H.

E. Lefeuvre, J. Achard, M. C. Castex, H. Schneider, C. Beuille, and A. Tardieu, “Bulk photoconductivity of CVD diamond films for UV and XUV detection,” Diamond Relat. Mater. 12, 642-646 (2003).
[CrossRef]

Sharma, R. P.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, and T. Venkatesana, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787-2789 (2001).
[CrossRef]

Shen, H.

S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, “ZnO Schottky ultraviolet photodetectors,” J. Cryst. Growth 225, 110-113 (2001).
[CrossRef]

Sheng, H.

S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, “ZnO Schottky ultraviolet photodetectors,” J. Cryst. Growth 225, 110-113 (2001).
[CrossRef]

Shi, W. M.

J. M. Liu, Y. B. Xia, L. J. Wang, Q. F. Su, and W. M. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300, 353-357 (2007).
[CrossRef]

Su, Q. F.

J. M. Liu, Y. B. Xia, L. J. Wang, Q. F. Su, and W. M. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300, 353-357 (2007).
[CrossRef]

Su, Y. K.

S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, and X. L. Du, “ZnO ultraviolet photodiodes with Pd contact electrodes,” Acta Mater. 55, 329-333 (2007).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth 293, 43-47 (2006).
[CrossRef]

T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, “ZnO MSM photodetectors with Ru contact electrodes,” J. Cryst. Growth 281, 513-517 (2005).
[CrossRef]

Suehiro, J.

J. Suehiro, N. Nakagawa, S. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, “Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor,” Nanotechnology 17, 2567-2573(2006).
[CrossRef] [PubMed]

Suzuki, S.

S. Yagi and S. Suzuki, “Effects of Mg doping on photoelectrical properties of hydrogenated GaN films grown at 380 °C,” Appl. Phys. Lett. 78, 2166-2168 (2001).
[CrossRef]

Tardieu, A.

E. Lefeuvre, J. Achard, M. C. Castex, H. Schneider, C. Beuille, and A. Tardieu, “Bulk photoconductivity of CVD diamond films for UV and XUV detection,” Diamond Relat. Mater. 12, 642-646 (2003).
[CrossRef]

Tut, T.

M. Gökkavas, S. Butun, T. Tut, N. Biyikli, and E. Ozbay, “AlGaN-based high-performance metal-semiconductor-metal photodetectors,” Photon. Nanostr. Fundam. Appl. 5, 53-62(2007).
[CrossRef]

Ueda, M.

J. Suehiro, N. Nakagawa, S. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, “Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor,” Nanotechnology 17, 2567-2573(2006).
[CrossRef] [PubMed]

Venkatesana, T.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, and T. Venkatesana, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787-2789 (2001).
[CrossRef]

Vispute, R. D.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, and T. Venkatesana, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787-2789 (2001).
[CrossRef]

Wang, L. J.

J. M. Liu, Y. B. Xia, L. J. Wang, Q. F. Su, and W. M. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300, 353-357 (2007).
[CrossRef]

Wang, T. M.

F. Pan, J. Y. Z., C. Cai, and T. M. Wang, “Rapid fabrication of large-area colloidal crystal monolayers by a vortical surface method,” Langmuir 22, 7101-7104 (2006).
[CrossRef] [PubMed]

Wu, K.-H.

K.-H. Wu and C.-J. Huang, “Nano-particled titaniun-oxide thin-films for ultra-violet optical-sensing applications,” in Proceedings of the IEEE Conference on Electron Devices and Solid-State Circuits, Vol. 1-2 (IEEE, 2007), pp. 663-664.
[CrossRef]

Xia, Y. B.

J. M. Liu, Y. B. Xia, L. J. Wang, Q. F. Su, and W. M. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300, 353-357 (2007).
[CrossRef]

Xue, H.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Yagi, S.

S. Yagi and S. Suzuki, “Effects of Mg doping on photoelectrical properties of hydrogenated GaN films grown at 380 °C,” Appl. Phys. Lett. 78, 2166-2168 (2001).
[CrossRef]

Yang, W.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, and T. Venkatesana, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787-2789 (2001).
[CrossRef]

Young, S. J.

S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, and X. L. Du, “ZnO ultraviolet photodiodes with Pd contact electrodes,” Acta Mater. 55, 329-333 (2007).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth 293, 43-47 (2006).
[CrossRef]

Z., J. Y.

F. Pan, J. Y. Z., C. Cai, and T. M. Wang, “Rapid fabrication of large-area colloidal crystal monolayers by a vortical surface method,” Langmuir 22, 7101-7104 (2006).
[CrossRef] [PubMed]

Zhou, J.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

Acta Mater. (1)

S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang, Y. K. Su, and X. L. Du, “ZnO ultraviolet photodiodes with Pd contact electrodes,” Acta Mater. 55, 329-333 (2007).
[CrossRef]

Appl. Phys. Lett. (4)

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, and W. Chen, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90, 201118 (2007).
[CrossRef]

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, and T. Venkatesana, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78, 2787-2789 (2001).
[CrossRef]

S. Y. Chou, Y. Liu, and P. B. Fischer, “Tera-hertz GaAs metal-semiconductor-metal photodetectors with 25 nm finger spacing and finger width,” Appl. Phys. Lett. 61, 477-479(1992).
[CrossRef]

S. Yagi and S. Suzuki, “Effects of Mg doping on photoelectrical properties of hydrogenated GaN films grown at 380 °C,” Appl. Phys. Lett. 78, 2166-2168 (2001).
[CrossRef]

Diam. Relat. Mater. (1)

S. Salvatori, E. Pace, M. C. Rossi, and F. Galluzzi, “Photoelectrical characteristics of diamond UV detectors: dependence on device design and film quality,” Diam. Relat. Mater. 6, 361-366 (1997).
[CrossRef]

Diamond Relat. Mater. (1)

E. Lefeuvre, J. Achard, M. C. Castex, H. Schneider, C. Beuille, and A. Tardieu, “Bulk photoconductivity of CVD diamond films for UV and XUV detection,” Diamond Relat. Mater. 12, 642-646 (2003).
[CrossRef]

J. Cryst. Growth (4)

J. M. Liu, Y. B. Xia, L. J. Wang, Q. F. Su, and W. M. Shi, “Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure,” J. Cryst. Growth 300, 353-357 (2007).
[CrossRef]

S. J. Young, L. W. Ji, S. J. Chang, and Y. K. Su, “ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes,” J. Cryst. Growth 293, 43-47 (2006).
[CrossRef]

T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita, and Y. Horikoshi, “ZnO MSM photodetectors with Ru contact electrodes,” J. Cryst. Growth 281, 513-517 (2005).
[CrossRef]

S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, “ZnO Schottky ultraviolet photodetectors,” J. Cryst. Growth 225, 110-113 (2001).
[CrossRef]

Langmuir (1)

F. Pan, J. Y. Z., C. Cai, and T. M. Wang, “Rapid fabrication of large-area colloidal crystal monolayers by a vortical surface method,” Langmuir 22, 7101-7104 (2006).
[CrossRef] [PubMed]

Mater. Sci. Eng. (1)

S. Salvatori, M. C. Rossi, F. Galluzzi, and E. Pace, “Solar-blind UV-photodetector based on polycrystalline diamond films: basic design principle and comparison with experimental results,” Mater. Sci. Eng. B46, 105-111 (1997).
[CrossRef]

Nanotechnology (1)

J. Suehiro, N. Nakagawa, S. Hidaka, M. Ueda, K. Imasaka, M. Higashihata, T. Okada, and M. Hara, “Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor,” Nanotechnology 17, 2567-2573(2006).
[CrossRef] [PubMed]

Photon. Nanostr. Fundam. Appl. (1)

M. Gökkavas, S. Butun, T. Tut, N. Biyikli, and E. Ozbay, “AlGaN-based high-performance metal-semiconductor-metal photodetectors,” Photon. Nanostr. Fundam. Appl. 5, 53-62(2007).
[CrossRef]

Proc. IEEE (1)

M. Razeghi, “Short-wavelength solar-blind detectors--status, prospects, and markets,” Proc. IEEE 90, 1006-1014 (2002).
[CrossRef]

Other (1)

K.-H. Wu and C.-J. Huang, “Nano-particled titaniun-oxide thin-films for ultra-violet optical-sensing applications,” in Proceedings of the IEEE Conference on Electron Devices and Solid-State Circuits, Vol. 1-2 (IEEE, 2007), pp. 663-664.
[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

(a) MSM coplanar-type photodetector using interdigital metal electrodes. (b) Sandwich-type photodetector using metal microgrid as an electrode.

Fig. 2
Fig. 2

Procedure for fabricating a sandwich-type photodetector using a metal microgrid as an electrode.

Fig. 3
Fig. 3

Morphologies of various parts of the sandwich-type photodetector using a metal microgrid as an electrode. (a) SEM micrograph of the Ti O 2 film; (b) SEM micrograph of the PS template; (c) SEM and (d) AFM micrographs of the Ag microgrid.

Fig. 4
Fig. 4

Transmittance spectra of the (a) Ag microgrid with a vertical thickness of 70 nm and (b) Ag thin film with a thickness of 200 nm coated on the quartz substrate.

Fig. 5
Fig. 5

(a) Current-voltage characteristics of the sample in the dark and (b) variation of photocurrent intensity with irradiation intensity.

Equations (1)

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R = I ph / I opt ,

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