Abstract

The applicability of a general transfer-matrix method for optical analysis of multilayersreported earlier [Katsidis and Siapkas, Appl. Opt. 41, 3978 (2002)] is being extended so as to simulate asymmetric implantation doping profiles using distributions with four moments. The sensitivity of infrared reflectance spectra regarding the variation of the first four moments of a Pearson free carrier distribution is demonstrated. Experimental data of 1.5  MeV as well as 2.5  MeV As implantation into p-Si followed by annealing at 1100°C are presented, suggesting the need to use two joined Pearson IV distribution segments in the simulation of annealed profiles. A twin peak observed in the 1.5  MeV case is confirmed by Rutherford backscattering analysis.

© 2008 Optical Society of America

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