Abstract

Boron films deposited by evaporation with an electron-beam were found to have a relatively high reflectance in the extreme ultraviolet with values similar to those of ion-beam-sputtered (IBS) SiC and IBS B4C. The largest reflectance was measured for an 11nm thick boron film. Some reflectance degradation was observed for boron films stored in a desiccator. Reflectance degradation varied from sample to sample and was found to be either similar to that of IBS SiC and IBS B4C or larger.

© 2008 Optical Society of America

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