Abstract

Atomic layer deposition (ALD) at this time is much slower than conventional optical thin-film deposition techniques. A more rapid ALD process for SiO2 has been developed than for other ALD materials. A fence post design for optical thin films has thin layers of high-index posts standing above a broad low-index ground. If a design for ALD can be predominantly composed of SiO2 layers with thin high-index layers, the deposition times can be correspondingly shortened, and it is shown that the required performance can still be nearly that of more conventional designs with high- and low-index layers of equal thickness. This combination makes the ALD benefits of conformal coating and precise thickness control more practical for optical thin-film applications.

© 2008 Optical Society of America

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