Abstract

A novel atomic layer deposition process for the preparation of fluoride thin films in a temperature range of 225  °C400  °C is introduced. The crystallinity, morphology, composition, thicknesses, refractive indices, and transmittance of the films are analyzed. Low impurity levels are obtained at 350  °C400  °C with good stoichiometry. Refractive indices of 1.34–1.42 for MgF2, 1.43 for CaF2, and 1.57–1.61 for LaF3 films are obtained.

© 2008 Optical Society of America

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