Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

Laurent Gallais; Jérémie Capoulade; Jean-Yves Natoli; Mireille Commandré; Michel Cathelinaud; Cian Koc; Michel Lequime

doi:10.1364/AO.47.00C107

Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

Laurent Gallais, Jérémie Capoulade, Jean-Yves Natoli, Mireille Commandré, Michel Cathelinaud, Cian Koc, and Michel Lequime

Applied Optics
Vol. 47,
Issue 13,
pp. C107-C113
(2008)
•https://doi.org/10.1364/AO.47.00C107

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Laurent Gallais, Jérémie Capoulade, Jean-Yves Natoli, Mireille Commandré, Michel Cathelinaud, Cian Koc, and Michel Lequime, "Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering," Appl. Opt. 47, C107-C113 (2008)

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Previously assigned OCIS codes
- Laser damage (140.3330)
- Thin films (310.0310)

About this Article
History
- Original Manuscript: August 6, 2007
- Manuscript Accepted: September 17, 2007
- Published: November 29, 2007

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Abstract

A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or ${H f O}_{2}$ starting material), reactive low voltage ion plating, and dual ion beam sputtering. The laser damage thresholds of these coatings are determined at 1064 and $355 n m$ using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy.

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Reference	Deposition Technique	Optical Thickness
DIBS 2H at 1064 nm	Dual ion beam sputtering	$λ / 2$ at 1064 nm
DIBS 2H at 355 nm	Dual ion beam sputtering	$λ / 2$ at 355 nm
RLVIP 2H at 1064 nm	Reactive low voltage ion plating	$λ / 2$ at 1064 nm
RLVIP 2H at 355 nm	Reactive low voltage ion plating	$λ / 2$ at 355 nm
EBD-Hf 2H at 1064 nm	EBD from an hafnium source	$λ / 2$ at 1064 nm
EBD-Hf 2H at 355 nm	EBD from an hafnium source	$λ / 2$ at 355 nm
EBD- ${H f O}_{2}$ 2H at 1064 nm	EBD from an hafnia source	$λ / 2$ at 1064 nm
EBD- ${H f O}_{2}$ 2H at 355 nm	EBD from an hafnia source	$λ / 2$ at 355 nm

Procedure	Deposition Technique
Procedure	EBD-Hf	EBD- ${H f O}_{2}$	RLVIP	DIBS
Starting material	Hafnium 99.5%	${H f O}_{2}$ tablets	Hafnium 99.5%	Hafnium 99.4%
	Umicore granulate 1–10 mm	Merck Patinal	Umicore granulate 1–10 mm	Neyco
Liner	Carbon	Molybdenum	Carbon
Evaporation gun	10 kV	10 kV		1 kV, 400 mA, acceleration: 350 V
Assistance parameters			Plasma source arc current and voltage: 55 A, 66 V	Ion gun: 375 V, 350 mA acceleration: 300 V
			Anode voltage: 42 V
Base pressure	$3 \times 10^{- 7}$ mbar	$3 \times 10^{- 7}$ mbar	$3 \times 10^{- 7}$ mbar	$7 \times 10^{- 7}$ mbar
Chamber pressure	$5 \times 10^{- 4}$ mbar	$5 \times 10^{- 4}$ mbar	$6 \times 10^{- 4}$ mbar	$5.5 \times 10^{- 4}$ mbar
	( $O_{2}$ )	( $O_{2}$ )	( $A r + O_{2}$ )	( $A r + O_{2}$ )
Deposition rate	0.9 nm∕s	0.9 nm∕s	0.2 nm∕s	0.05 nm∕s
Substrate temperature	250 °C lamp heaters	250 °C lamp heaters	200–250 °C no heaters	50 °C no heaters
Anode voltage			42 V

Reference	Deposition Technique	Optical Thickness
DIBS 2H at 1064 nm	Dual ion beam sputtering	$λ / 2$ at 1064 nm
DIBS 2H at 355 nm	Dual ion beam sputtering	$λ / 2$ at 355 nm
RLVIP 2H at 1064 nm	Reactive low voltage ion plating	$λ / 2$ at 1064 nm
RLVIP 2H at 355 nm	Reactive low voltage ion plating	$λ / 2$ at 355 nm
EBD-Hf 2H at 1064 nm	EBD from an hafnium source	$λ / 2$ at 1064 nm
EBD-Hf 2H at 355 nm	EBD from an hafnium source	$λ / 2$ at 355 nm
EBD- ${H f O}_{2}$ 2H at 1064 nm	EBD from an hafnia source	$λ / 2$ at 1064 nm
EBD- ${H f O}_{2}$ 2H at 355 nm	EBD from an hafnia source	$λ / 2$ at 355 nm

Procedure	Deposition Technique
Procedure	EBD-Hf	EBD- ${H f O}_{2}$	RLVIP	DIBS
Starting material	Hafnium 99.5%	${H f O}_{2}$ tablets	Hafnium 99.5%	Hafnium 99.4%
	Umicore granulate 1–10 mm	Merck Patinal	Umicore granulate 1–10 mm	Neyco
Liner	Carbon	Molybdenum	Carbon
Evaporation gun	10 kV	10 kV		1 kV, 400 mA, acceleration: 350 V
Assistance parameters			Plasma source arc current and voltage: 55 A, 66 V	Ion gun: 375 V, 350 mA acceleration: 300 V
			Anode voltage: 42 V
Base pressure	$3 \times 10^{- 7}$ mbar	$3 \times 10^{- 7}$ mbar	$3 \times 10^{- 7}$ mbar	$7 \times 10^{- 7}$ mbar
Chamber pressure	$5 \times 10^{- 4}$ mbar	$5 \times 10^{- 4}$ mbar	$6 \times 10^{- 4}$ mbar	$5.5 \times 10^{- 4}$ mbar
	( $O_{2}$ )	( $O_{2}$ )	( $A r + O_{2}$ )	( $A r + O_{2}$ )
Deposition rate	0.9 nm∕s	0.9 nm∕s	0.2 nm∕s	0.05 nm∕s
Substrate temperature	250 °C lamp heaters	250 °C lamp heaters	200–250 °C no heaters	50 °C no heaters
Anode voltage			42 V

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