P. Naulleau and C. Anderson, "Lithographic metrics for the determination of intrinsic resolution limits in EUV resists," Proc. SPIE 6517, 65172N (2007).

G. F. Lorusso, P. Leunissen, M. Ercken, C. Delvaux, F. V. Roey, and N. Vandenbroeck, "Spectral analysis of line width roughness and its applications to immersion lithography," J. Microlithogr., Microfab., Microsyst. 5, 033003 (2006).

G. M. Schmid, M. D. Stewart, C. Wang, B. D. Vogt, M. Vivek, E. K. Lin, and C. G. Willson, "Resolution limitations in chemically amplified photoresist systems," Proc. SPIE 5376, 333-342 (2004).

T. Brunner, C. Fonseca, N. Seong, and M. Burkhardt, "Impact of resist blur on MEF, OPC, and PD control," Proc. SPIE 5377, 141-149 (2004).

P. Dirksen, J. Braat, A. J. E. M. Janssen, A. Leeuwestein, H. Kwinten, and D. Van Steenwinckel, "Determination of resist parameters using the extended Nijboer-Zernike theory," Proc. SPIE 5377, 150-159 (2004).

P. Naulleau, "Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic," Proc. SPIE 5374, 881-891 (2004).

K. Goldberg, P. Naulleau, P. Denham, S. Rekawa, K. Jackson, E. Anderson, and J. A. Liddle, "At-wavelength alignment and testing of the 0.3 NA MET optic," J. Vac. Sci. Technol. B 22, 2956-2961 (2004).

R. Jones and J. Byers, "Theoretical corner rounding analysis and mask writer simulation," Proc. SPIE 5040, 1035-1043 (2003).

J. Hoffnagle, W. D. Hinsberg, F. A. Houle, and M. I. Sanchez, "Characterization of photoresist spatial resolution by interferometric lithography," Proc. SPIE 5038, 464-472 (2003).

C. Ahn, H. Kim, and K. Baik, "Novel approximate model for resist process," Proc. SPIE 3334, 752-763 (1998).

G. F. Lorusso, P. Leunissen, M. Ercken, C. Delvaux, F. V. Roey, and N. Vandenbroeck, "Spectral analysis of line width roughness and its applications to immersion lithography," J. Microlithogr., Microfab., Microsyst. 5, 033003 (2006).

K. Goldberg, P. Naulleau, P. Denham, S. Rekawa, K. Jackson, E. Anderson, and J. A. Liddle, "At-wavelength alignment and testing of the 0.3 NA MET optic," J. Vac. Sci. Technol. B 22, 2956-2961 (2004).

G. M. Schmid, M. D. Stewart, C. Wang, B. D. Vogt, M. Vivek, E. K. Lin, and C. G. Willson, "Resolution limitations in chemically amplified photoresist systems," Proc. SPIE 5376, 333-342 (2004).

P. Naulleau and C. Anderson, "Lithographic metrics for the determination of intrinsic resolution limits in EUV resists," Proc. SPIE 6517, 65172N (2007).

J. Hoffnagle, W. D. Hinsberg, F. A. Houle, and M. I. Sanchez, "Characterization of photoresist spatial resolution by interferometric lithography," Proc. SPIE 5038, 464-472 (2003).

T. Brunner, C. Fonseca, N. Seong, and M. Burkhardt, "Impact of resist blur on MEF, OPC, and PD control," Proc. SPIE 5377, 141-149 (2004).

P. Dirksen, J. Braat, A. J. E. M. Janssen, A. Leeuwestein, H. Kwinten, and D. Van Steenwinckel, "Determination of resist parameters using the extended Nijboer-Zernike theory," Proc. SPIE 5377, 150-159 (2004).

R. Jones and J. Byers, "Theoretical corner rounding analysis and mask writer simulation," Proc. SPIE 5040, 1035-1043 (2003).

C. Ahn, H. Kim, and K. Baik, "Novel approximate model for resist process," Proc. SPIE 3334, 752-763 (1998).

P. Naulleau, "Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic," Proc. SPIE 5374, 881-891 (2004).

As an external control, all experimental and modeling corner data are taken at and around the dose where the coded 100 nm features print at 100 nm.

Note that commercial modeling packages such as prolith and solid e could also be used.

S. Wurm, "EUV lithography development in the United States," presented at the Fourth International EUV Lithography Symposium, San Diego, Calif., 7-9 November 2005, proceedings available from SEMATECH, Austin, Tex.

S. Wurm, "EUV lithography update," presented at the Fifth International Symposium on EUV Lithography, Barcelona, Spain, 15-18 October 2006, proceedings available from SEMATECH, Austin, Tex.