Abstract

We describe for the first time to our knowledge the performance for a linear array of tapered laser diodes with both fast- and slow-axis collimation using a microlens for fast-axis collimation and a laser-written phase plate for slow-axis collimation and correction of the residual fast-axis errors from lens aberrations, thermal lensing, astigmatism, pointing errors, and other wavefront distortions. The phase plate leads to M2 factor reductions of 1.5 for the lensed array following the fast axis and 2.6 for the whole bar following the slow axis.

© 2007 Optical Society of America

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  1. J. N. Walpole, "Semiconductor amplifiers and lasers with tapered gain regions," Opt. Quantum Electron. 28, 623-645 (1996).
    [CrossRef]
  2. Y. Qu, B. Baoxue, Z. Baoshun, G. Xin, Z. Xingde, and S. Jiawei, "High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets," J. Cryst. Growth 227-228, 202-205 (2001).
    [CrossRef]
  3. Y. Qu, B. Bo, X. Gao, G. Hu, X. Zhang, and J. Shi, "940 nm low beam divergence tapered window laser arrays," Opt. Laser Technol. 34, 675-677 (2002).
    [CrossRef]
  4. M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.
  5. S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability," Appl. Phys. Lett. 84, 2238-2240 (2004).
    [CrossRef]
  6. B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, P. Ressel, and G. Tränkle, "Reliable 1 W CW operation of high-brightness tapered diode lasers at 735 nm," IEEE Photon. Technol. Lett. 16, 984-986 (2004).
    [CrossRef]
  7. K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle, "Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W," IEEE J. Sel. Top. Quantum Electron. 11, 1223-1227 (2005).
    [CrossRef]
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    [CrossRef]
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2006 (2)

2005 (1)

K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle, "Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W," IEEE J. Sel. Top. Quantum Electron. 11, 1223-1227 (2005).
[CrossRef]

2004 (2)

S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability," Appl. Phys. Lett. 84, 2238-2240 (2004).
[CrossRef]

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, P. Ressel, and G. Tränkle, "Reliable 1 W CW operation of high-brightness tapered diode lasers at 735 nm," IEEE Photon. Technol. Lett. 16, 984-986 (2004).
[CrossRef]

2003 (4)

M. Krakowski, S. C. Auzanneau, E. Berlie, M. Calligaro, Y. Robert, O. Parillaud, and M. Lecomte, "1 W high brightness index guided tapered laser at 980 nm using Al-free active region materials," Electron. Lett. 39, 1122-1123 (2003).
[CrossRef]

D. C. Heo, I. K. Han, J. I. Lee, and J. C. Jeong, "Maximum power CW 2.45-W 1.55-μm InGaAsP laterally tapered laser diodes," J. Korean Phys. Soc. 43, 352-356 (2003).

J. F. Monjardín, K. M. Nowak, A. R. Holdsworth, H. J. Baker, and D. R. Hall, "Brightness improvement for micro-lensed, laser diode bar stacks," in Conference on Lasers and Electro-Optics--Europe (IEEE, 2003), p. 151.

M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.

2002 (2)

2001 (1)

Y. Qu, B. Baoxue, Z. Baoshun, G. Xin, Z. Xingde, and S. Jiawei, "High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets," J. Cryst. Growth 227-228, 202-205 (2001).
[CrossRef]

1996 (1)

J. N. Walpole, "Semiconductor amplifiers and lasers with tapered gain regions," Opt. Quantum Electron. 28, 623-645 (1996).
[CrossRef]

1991 (1)

D. Garbuzov, N. Antonishkis, A. Bondarev, A. Gulakov, S. Zhigulin, N. Katsavets, A. Kochergin, and E. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SQW lasers," IEEE J. Quantum Electron. 27, 1531-1536 (1991).
[CrossRef]

1980 (1)

Antonishkis, N.

D. Garbuzov, N. Antonishkis, A. Bondarev, A. Gulakov, S. Zhigulin, N. Katsavets, A. Kochergin, and E. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SQW lasers," IEEE J. Quantum Electron. 27, 1531-1536 (1991).
[CrossRef]

Auzanneau, S. C.

M. Krakowski, S. C. Auzanneau, E. Berlie, M. Calligaro, Y. Robert, O. Parillaud, and M. Lecomte, "1 W high brightness index guided tapered laser at 980 nm using Al-free active region materials," Electron. Lett. 39, 1122-1123 (2003).
[CrossRef]

M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.

Auzanneau, S.-C.

S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability," Appl. Phys. Lett. 84, 2238-2240 (2004).
[CrossRef]

Baker, H. J.

Baoshun, Z.

Y. Qu, B. Baoxue, Z. Baoshun, G. Xin, Z. Xingde, and S. Jiawei, "High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets," J. Cryst. Growth 227-228, 202-205 (2001).
[CrossRef]

Baoxue, B.

Y. Qu, B. Baoxue, Z. Baoshun, G. Xin, Z. Xingde, and S. Jiawei, "High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets," J. Cryst. Growth 227-228, 202-205 (2001).
[CrossRef]

Beister, G.

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, P. Ressel, and G. Tränkle, "Reliable 1 W CW operation of high-brightness tapered diode lasers at 735 nm," IEEE Photon. Technol. Lett. 16, 984-986 (2004).
[CrossRef]

Berlie, E.

M. Krakowski, S. C. Auzanneau, E. Berlie, M. Calligaro, Y. Robert, O. Parillaud, and M. Lecomte, "1 W high brightness index guided tapered laser at 980 nm using Al-free active region materials," Electron. Lett. 39, 1122-1123 (2003).
[CrossRef]

Bo, B.

Y. Qu, B. Bo, X. Gao, G. Hu, X. Zhang, and J. Shi, "940 nm low beam divergence tapered window laser arrays," Opt. Laser Technol. 34, 675-677 (2002).
[CrossRef]

Bondarev, A.

D. Garbuzov, N. Antonishkis, A. Bondarev, A. Gulakov, S. Zhigulin, N. Katsavets, A. Kochergin, and E. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SQW lasers," IEEE J. Quantum Electron. 27, 1531-1536 (1991).
[CrossRef]

Boulant, B.

M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.

Calligaro, M.

S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability," Appl. Phys. Lett. 84, 2238-2240 (2004).
[CrossRef]

M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.

M. Krakowski, S. C. Auzanneau, E. Berlie, M. Calligaro, Y. Robert, O. Parillaud, and M. Lecomte, "1 W high brightness index guided tapered laser at 980 nm using Al-free active region materials," Electron. Lett. 39, 1122-1123 (2003).
[CrossRef]

Deubert, S.

S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability," Appl. Phys. Lett. 84, 2238-2240 (2004).
[CrossRef]

Dittmar, F.

K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle, "Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W," IEEE J. Sel. Top. Quantum Electron. 11, 1223-1227 (2005).
[CrossRef]

Erbert, G.

K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle, "Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W," IEEE J. Sel. Top. Quantum Electron. 11, 1223-1227 (2005).
[CrossRef]

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, P. Ressel, and G. Tränkle, "Reliable 1 W CW operation of high-brightness tapered diode lasers at 735 nm," IEEE Photon. Technol. Lett. 16, 984-986 (2004).
[CrossRef]

Fillardet, T.

M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.

Forchel, A.

S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability," Appl. Phys. Lett. 84, 2238-2240 (2004).
[CrossRef]

Fricke, J.

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, P. Ressel, and G. Tränkle, "Reliable 1 W CW operation of high-brightness tapered diode lasers at 735 nm," IEEE Photon. Technol. Lett. 16, 984-986 (2004).
[CrossRef]

Gao, X.

Y. Qu, B. Bo, X. Gao, G. Hu, X. Zhang, and J. Shi, "940 nm low beam divergence tapered window laser arrays," Opt. Laser Technol. 34, 675-677 (2002).
[CrossRef]

Garbuzov, D.

D. Garbuzov, N. Antonishkis, A. Bondarev, A. Gulakov, S. Zhigulin, N. Katsavets, A. Kochergin, and E. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SQW lasers," IEEE J. Quantum Electron. 27, 1531-1536 (1991).
[CrossRef]

Gulakov, A.

D. Garbuzov, N. Antonishkis, A. Bondarev, A. Gulakov, S. Zhigulin, N. Katsavets, A. Kochergin, and E. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SQW lasers," IEEE J. Quantum Electron. 27, 1531-1536 (1991).
[CrossRef]

Hall, D. R.

Han, I. K.

D. C. Heo, I. K. Han, J. I. Lee, and J. C. Jeong, "Maximum power CW 2.45-W 1.55-μm InGaAsP laterally tapered laser diodes," J. Korean Phys. Soc. 43, 352-356 (2003).

Heo, D. C.

D. C. Heo, I. K. Han, J. I. Lee, and J. C. Jeong, "Maximum power CW 2.45-W 1.55-μm InGaAsP laterally tapered laser diodes," J. Korean Phys. Soc. 43, 352-356 (2003).

Holdsworth, A. R.

J. F. Monjardín, K. M. Nowak, A. R. Holdsworth, H. J. Baker, and D. R. Hall, "Brightness improvement for micro-lensed, laser diode bar stacks," in Conference on Lasers and Electro-Optics--Europe (IEEE, 2003), p. 151.

Hu, G.

Y. Qu, B. Bo, X. Gao, G. Hu, X. Zhang, and J. Shi, "940 nm low beam divergence tapered window laser arrays," Opt. Laser Technol. 34, 675-677 (2002).
[CrossRef]

Jeong, J. C.

D. C. Heo, I. K. Han, J. I. Lee, and J. C. Jeong, "Maximum power CW 2.45-W 1.55-μm InGaAsP laterally tapered laser diodes," J. Korean Phys. Soc. 43, 352-356 (2003).

Jiawei, S.

Y. Qu, B. Baoxue, Z. Baoshun, G. Xin, Z. Xingde, and S. Jiawei, "High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets," J. Cryst. Growth 227-228, 202-205 (2001).
[CrossRef]

Katsavets, N.

D. Garbuzov, N. Antonishkis, A. Bondarev, A. Gulakov, S. Zhigulin, N. Katsavets, A. Kochergin, and E. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SQW lasers," IEEE J. Quantum Electron. 27, 1531-1536 (1991).
[CrossRef]

Klopf, F.

S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability," Appl. Phys. Lett. 84, 2238-2240 (2004).
[CrossRef]

Knauer, A.

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, P. Ressel, and G. Tränkle, "Reliable 1 W CW operation of high-brightness tapered diode lasers at 735 nm," IEEE Photon. Technol. Lett. 16, 984-986 (2004).
[CrossRef]

Kochergin, A.

D. Garbuzov, N. Antonishkis, A. Bondarev, A. Gulakov, S. Zhigulin, N. Katsavets, A. Kochergin, and E. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SQW lasers," IEEE J. Quantum Electron. 27, 1531-1536 (1991).
[CrossRef]

Krakowski, M.

S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability," Appl. Phys. Lett. 84, 2238-2240 (2004).
[CrossRef]

M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.

M. Krakowski, S. C. Auzanneau, E. Berlie, M. Calligaro, Y. Robert, O. Parillaud, and M. Lecomte, "1 W high brightness index guided tapered laser at 980 nm using Al-free active region materials," Electron. Lett. 39, 1122-1123 (2003).
[CrossRef]

Laugustin, A.

M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.

Lecomte, M.

M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.

M. Krakowski, S. C. Auzanneau, E. Berlie, M. Calligaro, Y. Robert, O. Parillaud, and M. Lecomte, "1 W high brightness index guided tapered laser at 980 nm using Al-free active region materials," Electron. Lett. 39, 1122-1123 (2003).
[CrossRef]

Lee, J. I.

D. C. Heo, I. K. Han, J. I. Lee, and J. C. Jeong, "Maximum power CW 2.45-W 1.55-μm InGaAsP laterally tapered laser diodes," J. Korean Phys. Soc. 43, 352-356 (2003).

Markillie, G. A. J.

Monjardin, J. F.

Monjardín, J. F.

J. F. Monjardín, K. M. Nowak, A. R. Holdsworth, H. J. Baker, and D. R. Hall, "Brightness improvement for micro-lensed, laser diode bar stacks," in Conference on Lasers and Electro-Optics--Europe (IEEE, 2003), p. 151.

Nowak, K. M.

Parillaud, O.

M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.

M. Krakowski, S. C. Auzanneau, E. Berlie, M. Calligaro, Y. Robert, O. Parillaud, and M. Lecomte, "1 W high brightness index guided tapered laser at 980 nm using Al-free active region materials," Electron. Lett. 39, 1122-1123 (2003).
[CrossRef]

Paschke, K.

K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle, "Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W," IEEE J. Sel. Top. Quantum Electron. 11, 1223-1227 (2005).
[CrossRef]

Qu, Y.

Y. Qu, B. Bo, X. Gao, G. Hu, X. Zhang, and J. Shi, "940 nm low beam divergence tapered window laser arrays," Opt. Laser Technol. 34, 675-677 (2002).
[CrossRef]

Y. Qu, B. Baoxue, Z. Baoshun, G. Xin, Z. Xingde, and S. Jiawei, "High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets," J. Cryst. Growth 227-228, 202-205 (2001).
[CrossRef]

Rafailov, E.

D. Garbuzov, N. Antonishkis, A. Bondarev, A. Gulakov, S. Zhigulin, N. Katsavets, A. Kochergin, and E. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SQW lasers," IEEE J. Quantum Electron. 27, 1531-1536 (1991).
[CrossRef]

Reithmaier, J. P.

S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability," Appl. Phys. Lett. 84, 2238-2240 (2004).
[CrossRef]

Ressel, P.

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, P. Ressel, and G. Tränkle, "Reliable 1 W CW operation of high-brightness tapered diode lasers at 735 nm," IEEE Photon. Technol. Lett. 16, 984-986 (2004).
[CrossRef]

Robert, Y.

M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.

M. Krakowski, S. C. Auzanneau, E. Berlie, M. Calligaro, Y. Robert, O. Parillaud, and M. Lecomte, "1 W high brightness index guided tapered laser at 980 nm using Al-free active region materials," Electron. Lett. 39, 1122-1123 (2003).
[CrossRef]

Shi, J.

Y. Qu, B. Bo, X. Gao, G. Hu, X. Zhang, and J. Shi, "940 nm low beam divergence tapered window laser arrays," Opt. Laser Technol. 34, 675-677 (2002).
[CrossRef]

Southwell, W. H.

Staske, R.

K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle, "Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W," IEEE J. Sel. Top. Quantum Electron. 11, 1223-1227 (2005).
[CrossRef]

Sumpf, B.

K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle, "Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W," IEEE J. Sel. Top. Quantum Electron. 11, 1223-1227 (2005).
[CrossRef]

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, P. Ressel, and G. Tränkle, "Reliable 1 W CW operation of high-brightness tapered diode lasers at 735 nm," IEEE Photon. Technol. Lett. 16, 984-986 (2004).
[CrossRef]

Tränkle, G.

K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle, "Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W," IEEE J. Sel. Top. Quantum Electron. 11, 1223-1227 (2005).
[CrossRef]

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, P. Ressel, and G. Tränkle, "Reliable 1 W CW operation of high-brightness tapered diode lasers at 735 nm," IEEE Photon. Technol. Lett. 16, 984-986 (2004).
[CrossRef]

Villarreal, F. J.

Walpole, J. N.

J. N. Walpole, "Semiconductor amplifiers and lasers with tapered gain regions," Opt. Quantum Electron. 28, 623-645 (1996).
[CrossRef]

Wenzel, H.

K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle, "Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W," IEEE J. Sel. Top. Quantum Electron. 11, 1223-1227 (2005).
[CrossRef]

Xin, G.

Y. Qu, B. Baoxue, Z. Baoshun, G. Xin, Z. Xingde, and S. Jiawei, "High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets," J. Cryst. Growth 227-228, 202-205 (2001).
[CrossRef]

Xingde, Z.

Y. Qu, B. Baoxue, Z. Baoshun, G. Xin, Z. Xingde, and S. Jiawei, "High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets," J. Cryst. Growth 227-228, 202-205 (2001).
[CrossRef]

Zhang, X.

Y. Qu, B. Bo, X. Gao, G. Hu, X. Zhang, and J. Shi, "940 nm low beam divergence tapered window laser arrays," Opt. Laser Technol. 34, 675-677 (2002).
[CrossRef]

Zhigulin, S.

D. Garbuzov, N. Antonishkis, A. Bondarev, A. Gulakov, S. Zhigulin, N. Katsavets, A. Kochergin, and E. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SQW lasers," IEEE J. Quantum Electron. 27, 1531-1536 (1991).
[CrossRef]

Appl. Opt. (2)

Appl. Phys. Lett. (1)

S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, "High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability," Appl. Phys. Lett. 84, 2238-2240 (2004).
[CrossRef]

Electron. Lett. (1)

M. Krakowski, S. C. Auzanneau, E. Berlie, M. Calligaro, Y. Robert, O. Parillaud, and M. Lecomte, "1 W high brightness index guided tapered laser at 980 nm using Al-free active region materials," Electron. Lett. 39, 1122-1123 (2003).
[CrossRef]

IEEE J. Quantum Electron. (1)

D. Garbuzov, N. Antonishkis, A. Bondarev, A. Gulakov, S. Zhigulin, N. Katsavets, A. Kochergin, and E. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SQW lasers," IEEE J. Quantum Electron. 27, 1531-1536 (1991).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle, "Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 W," IEEE J. Sel. Top. Quantum Electron. 11, 1223-1227 (2005).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, P. Ressel, and G. Tränkle, "Reliable 1 W CW operation of high-brightness tapered diode lasers at 735 nm," IEEE Photon. Technol. Lett. 16, 984-986 (2004).
[CrossRef]

J. Cryst. Growth (1)

Y. Qu, B. Baoxue, Z. Baoshun, G. Xin, Z. Xingde, and S. Jiawei, "High-power, low-beam-divergence 980 nm laser arrays with nonabsorbing facets," J. Cryst. Growth 227-228, 202-205 (2001).
[CrossRef]

J. Korean Phys. Soc. (1)

D. C. Heo, I. K. Han, J. I. Lee, and J. C. Jeong, "Maximum power CW 2.45-W 1.55-μm InGaAsP laterally tapered laser diodes," J. Korean Phys. Soc. 43, 352-356 (2003).

J. Opt. Soc. Am. (1)

Opt. Express (1)

Opt. Laser Technol. (1)

Y. Qu, B. Bo, X. Gao, G. Hu, X. Zhang, and J. Shi, "940 nm low beam divergence tapered window laser arrays," Opt. Laser Technol. 34, 675-677 (2002).
[CrossRef]

Opt. Quantum Electron. (1)

J. N. Walpole, "Semiconductor amplifiers and lasers with tapered gain regions," Opt. Quantum Electron. 28, 623-645 (1996).
[CrossRef]

Other (3)

M. Krakowski, S. C. Auzanneau, M. Calligaro, O. Parillaud, M. Lecomte, Y. Robert, B. Boulant, A. Laugustin, and T. Fillardet, "High brightness 25W-CW, 50W-QCW, tapered laser mini-bars at 980 nm with free A1 active region," in Proceedings of the European Conference on Optical Communication (IEE, 2003), pp. 728-729.

PowerPhotonic Ltd., Earl Mountbatten Building, Riccarton Campus, Edinburgh EH14 4AS, UK.

J. F. Monjardín, K. M. Nowak, A. R. Holdsworth, H. J. Baker, and D. R. Hall, "Brightness improvement for micro-lensed, laser diode bar stacks," in Conference on Lasers and Electro-Optics--Europe (IEEE, 2003), p. 151.

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Figures (10)

Fig. 1
Fig. 1

Al-free active region laser structure: 1QW, single quantum well.

Fig. 2
Fig. 2

Geometry of the index-guided tapered laser (IG1). HR, high reflection; AR, antireflection.

Fig. 3
Fig. 3

Geometry of the array of ten tapered lasers.

Fig. 4
Fig. 4

Output power and wall-plug (WP) efficiency of the small array of tapered lasers (10 × IG1).

Fig. 5
Fig. 5

Far field of the IG1 laser at maximum output power (slow axis).

Fig. 6
Fig. 6

Far field of the IG1 laser at maximum output power (fast axis).

Fig. 7
Fig. 7

Fast-axis diffraction pattern at maximum output power. FWHM = 0.19°, M 2 = 1.18 .

Fig. 8
Fig. 8

Slow-axis diffraction pattern at maximum output power. FWHM = 0.70°, M 2 = 2.24 for individual beams.

Fig. 9
Fig. 9

FWHM divergence versus the driving current and parabolic fit.

Fig. 10
Fig. 10

Output power versus driving current of the array before lensing (circles) and after correction (crosses).

Tables (3)

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Table 1 Near-Field Widths of the Ten Individual Lasers within the Array

Tables Icon

Table 2 Beam Quality Parameters of the Ten Individual Lasers within the Array

Tables Icon

Table 3 Astigmatism at Maximum Output Power

Equations (1)

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M 1 / e 2 2 = π 4 λ w 1 / e 2 θ 1 / e 2 ,

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