Abstract

InGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946  nm. With an incident pump power of 9.2 W, the laser produces pulses of 38   ns duration with average pulse energy of as much as 20   μJ at a pulse repetition rate of 55   kHz.

© 2007 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. W. Koechner, Solid-State Laser Engineering, 5th ed., Vol. 1 of Optical Sciences (Springer, 1999).
  2. Y. Kaneda, M. Oka, H. Masuda, and S. Kubota, "7.6 W of continuous-wave radiation in a TEM00 mode from a laser-diode end-pumped Nd:YAG laser," Opt. Lett. 17, 1003-1005 (1992).
    [CrossRef] [PubMed]
  3. T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
    [CrossRef]
  4. T. Y. Fan and R. L. Byer, "Modeling and cw operation of a quasi-three-level lasers 946 nm Nd:YAG laser," IEEE J. Quantum Electron. 23, 605-612 (1987).
    [CrossRef]
  5. T. Y. Fan, "Optimizing the efficiency and stored energy in quasi-three-level lasers," IEEE J. Quantum Electron. 28, 2692-2697 (1992).
    [CrossRef]
  6. T. Kellner, F. Heine, G. Huber, and S. Kuck, "Passive Q-switching of a diode-pumped 946-nm Nd:YAG with 1.6-W average output power," Appl. Opt. 37, 7076-7079 (1998).
    [CrossRef]
  7. L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005).
    [CrossRef]
  8. S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006).
    [CrossRef]
  9. S. Spiekermann, H. Karlsson, and F. Laurell, "Efficient frequency conversion of a passively Q-switched Nd:YAG laser at 946 nm in periodically poled KTiOPO4," Appl. Opt. 40, 1979-1982 (2001).
    [CrossRef]
  10. X. Zhang, A. Brenier, J. Wang, and H. Zhang, "Absorption cross-sections of Cr4+:YAG at 946 and 914 nm," Opt. Mater. 26, 293-296 (2004).
    [CrossRef]
  11. S. Johansson, S. Bjurshagen, C. Canalias, V. Pasiskevicius, and F. Laurell, "An all solid-state UV source based on a frequency quadrupled, passively Q-switched 946 nm laser," Opt. Express 15, 449-458 (2007).
    [CrossRef] [PubMed]
  12. G. J. Spühler, R. Paschotta, R. Fluck, B. Braun, M. Moser, G. Zhang, E. Gini, and U. Keller, "Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers," J. Opt. Soc. Am. B 16, 376-388 (1999).
    [CrossRef]
  13. J. Y. Huang, H. C. Liang, K. W. Su, H. C. Lai, Y. F. Chen, and K. F. Huang, "InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YAG laser at 1123 nm," Appl. Opt. 46, 239-242 (2007).
    [CrossRef] [PubMed]
  14. F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
    [CrossRef]
  15. S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
    [CrossRef]
  16. T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
    [CrossRef]
  17. M. J. Lederer, V. Kolev, B. Luther-Davies, H. H. Tan, and C. Jagadish, "Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking," J. Phys. D 34, 2455-2464 (2001).
    [CrossRef]
  18. G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001).
    [CrossRef]

2007 (2)

2006 (1)

S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006).
[CrossRef]

2005 (1)

L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005).
[CrossRef]

2004 (1)

X. Zhang, A. Brenier, J. Wang, and H. Zhang, "Absorption cross-sections of Cr4+:YAG at 946 and 914 nm," Opt. Mater. 26, 293-296 (2004).
[CrossRef]

2002 (1)

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

2001 (5)

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
[CrossRef]

M. J. Lederer, V. Kolev, B. Luther-Davies, H. H. Tan, and C. Jagadish, "Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking," J. Phys. D 34, 2455-2464 (2001).
[CrossRef]

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001).
[CrossRef]

S. Spiekermann, H. Karlsson, and F. Laurell, "Efficient frequency conversion of a passively Q-switched Nd:YAG laser at 946 nm in periodically poled KTiOPO4," Appl. Opt. 40, 1979-1982 (2001).
[CrossRef]

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

1999 (2)

1998 (1)

1997 (1)

T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
[CrossRef]

1992 (2)

1987 (1)

T. Y. Fan and R. L. Byer, "Modeling and cw operation of a quasi-three-level lasers 946 nm Nd:YAG laser," IEEE J. Quantum Electron. 23, 605-612 (1987).
[CrossRef]

Bjurshagen, S.

Braun, B.

Brenier, A.

X. Zhang, A. Brenier, J. Wang, and H. Zhang, "Absorption cross-sections of Cr4+:YAG at 946 and 914 nm," Opt. Mater. 26, 293-296 (2004).
[CrossRef]

Bugge, F.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Byer, R. L.

T. Y. Fan and R. L. Byer, "Modeling and cw operation of a quasi-three-level lasers 946 nm Nd:YAG laser," IEEE J. Quantum Electron. 23, 605-612 (1987).
[CrossRef]

Canalias, C.

Chen, Y. F.

Chen, Z.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
[CrossRef]

Chitica, N.

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

Erbert, G.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Fan, T. Y.

T. Y. Fan, "Optimizing the efficiency and stored energy in quasi-three-level lasers," IEEE J. Quantum Electron. 28, 2692-2697 (1992).
[CrossRef]

T. Y. Fan and R. L. Byer, "Modeling and cw operation of a quasi-three-level lasers 946 nm Nd:YAG laser," IEEE J. Quantum Electron. 23, 605-612 (1987).
[CrossRef]

Feng, B. H.

S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006).
[CrossRef]

L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005).
[CrossRef]

Fluck, R.

Fricke, J.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Gini, E.

Gouardes, E.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
[CrossRef]

Gramlich, S.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Haiml, M.

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001).
[CrossRef]

Hammar, M.

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

Heine, F.

T. Kellner, F. Heine, G. Huber, and S. Kuck, "Passive Q-switching of a diode-pumped 946-nm Nd:YAG with 1.6-W average output power," Appl. Opt. 37, 7076-7079 (1998).
[CrossRef]

T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
[CrossRef]

Huang, J. Y.

Huang, K. F.

Huber, G.

T. Kellner, F. Heine, G. Huber, and S. Kuck, "Passive Q-switching of a diode-pumped 946-nm Nd:YAG with 1.6-W average output power," Appl. Opt. 37, 7076-7079 (1998).
[CrossRef]

T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
[CrossRef]

Iga, K.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
[CrossRef]

Jagadish, C.

M. J. Lederer, V. Kolev, B. Luther-Davies, H. H. Tan, and C. Jagadish, "Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking," J. Phys. D 34, 2455-2464 (2001).
[CrossRef]

Johansson, S.

Kaneda, Y.

Karlsson, H.

Kawaguchi, M.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
[CrossRef]

Keller, U.

Kellner, T.

T. Kellner, F. Heine, G. Huber, and S. Kuck, "Passive Q-switching of a diode-pumped 946-nm Nd:YAG with 1.6-W average output power," Appl. Opt. 37, 7076-7079 (1998).
[CrossRef]

T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
[CrossRef]

Koechner, W.

W. Koechner, Solid-State Laser Engineering, 5th ed., Vol. 1 of Optical Sciences (Springer, 1999).

Kolev, V.

M. J. Lederer, V. Kolev, B. Luther-Davies, H. H. Tan, and C. Jagadish, "Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking," J. Phys. D 34, 2455-2464 (2001).
[CrossRef]

Kondo, T.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
[CrossRef]

Koyama, F.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
[CrossRef]

Kubota, S.

Kuck, S.

Lai, H. C.

Laurell, F.

Lederer, M. J.

M. J. Lederer, V. Kolev, B. Luther-Davies, H. H. Tan, and C. Jagadish, "Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking," J. Phys. D 34, 2455-2464 (2001).
[CrossRef]

Li, C. Y.

L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005).
[CrossRef]

Li, D. H.

L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005).
[CrossRef]

Liang, H. C.

Lu, P. M.

L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005).
[CrossRef]

Luther-Davies, B.

M. J. Lederer, V. Kolev, B. Luther-Davies, H. H. Tan, and C. Jagadish, "Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking," J. Phys. D 34, 2455-2464 (2001).
[CrossRef]

Masuda, H.

Miyamoto, T.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
[CrossRef]

Mogg, S.

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

Moser, M.

Oka, M.

Paschotta, R.

Pasiskevicius, V.

Reffert, S.

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001).
[CrossRef]

Schatz, R.

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

Schlenker, D.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
[CrossRef]

Spiekermann, S.

Spühler, G. J.

Staske, R.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Su, K. W.

Tan, H. H.

M. J. Lederer, V. Kolev, B. Luther-Davies, H. H. Tan, and C. Jagadish, "Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking," J. Phys. D 34, 2455-2464 (2001).
[CrossRef]

Wang, J.

X. Zhang, A. Brenier, J. Wang, and H. Zhang, "Absorption cross-sections of Cr4+:YAG at 946 and 914 nm," Opt. Mater. 26, 293-296 (2004).
[CrossRef]

Wang, S. M.

S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006).
[CrossRef]

Wei, Z. Y.

L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005).
[CrossRef]

Wenzel, H.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Weyers, M.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Zeimer, U.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Zhang, C. Y.

S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006).
[CrossRef]

Zhang, D. X.

S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006).
[CrossRef]

Zhang, G.

Zhang, H.

X. Zhang, A. Brenier, J. Wang, and H. Zhang, "Absorption cross-sections of Cr4+:YAG at 946 and 914 nm," Opt. Mater. 26, 293-296 (2004).
[CrossRef]

Zhang, L.

S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006).
[CrossRef]

L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005).
[CrossRef]

Zhang, Q. L.

S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006).
[CrossRef]

Zhang, X.

X. Zhang, A. Brenier, J. Wang, and H. Zhang, "Absorption cross-sections of Cr4+:YAG at 946 and 914 nm," Opt. Mater. 26, 293-296 (2004).
[CrossRef]

Zhang, Z. G.

S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006).
[CrossRef]

L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005).
[CrossRef]

Appl. Opt. (3)

Appl. Phys. B (1)

T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
[CrossRef]

Appl. Phys. Lett. (3)

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001).
[CrossRef]

Chin. Phys. Lett. (2)

L. Zhang, C. Y. Li, B. H. Feng, Z. Y. Wei, D. H. Li, P. M. Lu, and Z. G. Zhang, "Diode-pumped passive Q-switched 946-nm Nd:YAG laser with 2.1-W average output power," Chin. Phys. Lett. 22, 1420-1422 (2005).
[CrossRef]

S. M. Wang, Q. L. Zhang, L. Zhang, C. Y. Zhang, D. X. Zhang, B. H. Feng, and Z. G. Zhang, "Diode-pumped passively Q-switched 946 nm Nd:YAG laser with a GaAs saturable absorber," Chin. Phys. Lett. 23, 619-621 (2006).
[CrossRef]

IEEE J. Quantum Electron. (2)

T. Y. Fan and R. L. Byer, "Modeling and cw operation of a quasi-three-level lasers 946 nm Nd:YAG laser," IEEE J. Quantum Electron. 23, 605-612 (1987).
[CrossRef]

T. Y. Fan, "Optimizing the efficiency and stored energy in quasi-three-level lasers," IEEE J. Quantum Electron. 28, 2692-2697 (1992).
[CrossRef]

J. Opt. Soc. Am. B (1)

J. Phys. D (1)

M. J. Lederer, V. Kolev, B. Luther-Davies, H. H. Tan, and C. Jagadish, "Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking," J. Phys. D 34, 2455-2464 (2001).
[CrossRef]

Jpn. J. Appl. Phys., Part 1 (1)

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys., Part 1 40, 467-471 (2001).
[CrossRef]

Opt. Express (1)

Opt. Lett. (1)

Opt. Mater. (1)

X. Zhang, A. Brenier, J. Wang, and H. Zhang, "Absorption cross-sections of Cr4+:YAG at 946 and 914 nm," Opt. Mater. 26, 293-296 (2004).
[CrossRef]

Other (1)

W. Koechner, Solid-State Laser Engineering, 5th ed., Vol. 1 of Optical Sciences (Springer, 1999).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1
Fig. 1

Measured results for the low-intensity transmission spectrum.

Fig. 2
Fig. 2

Room-temperature PL spectrum of the InGaAs QW saturable absorber.

Fig. 3
Fig. 3

Schematic of a diode-pumped passively Q-switched Nd:YAG laser at 946   nm HR, high reflection; HT, high transmission; and AR, antireflection.

Fig. 4
Fig. 4

Average output powers at 946   nm with respect to the incident pump power in CW and passively Q-switching operations.

Fig. 5
Fig. 5

Experimental results for pulse repetition rate and pulse energy versus incident pump power.

Fig. 6
Fig. 6

(a) Typical oscilloscope trace of a train of output pulses and (b) expanded shape of a single pulse.

Metrics