Abstract

The phase-matching conditions of AgGaGeS4 have been measured for second-harmonic generation at 0.8 and 5.3 μm, and difference-frequency generation at 2.2, 3.6–5.1, and 4.811.8  μm. The improved Sellmeier equations that reproduce well the various phase-matching conditions are presented.

© 2007 Optical Society of America

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References

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  1. V. V. Badikov, A. G. Tyulyupa, G. S. Shevyrdyaeva, and S. G. Sheina, "Solid solutions in the AgGaS2-GeS2 and AgGaSe2-GeSe2 systems," Inorg. Mater. 27, 177-180 (1991).
  2. M. V. Kabanov, Y. M. Andreev, V. V. Badikov, and P. P. Geiko, "Parametric frequency converters based on new nonlinear crystals," Russ. Phys. J. 46, 835-846 (2003). The values of lattice constants a and c, and Sellmeier coefficients Nx and Ny given in this reference, should be interchanged. The form of Sellmeier equations used in this reference should be corrected to n2 = A + B/(C − λ2) + D/(E − λ2).
    [CrossRef]
  3. D. M. Ren, J. Z. Huang, Y. C. Qu, X. Y. Hu, Y. Andreev, P. Geiko, V. Badikov, and A. Shaiduko, "Optical properties and frequency conversion with AgGaGeS4 crystal," Chin. Phys. 13, 1468-1473 (2004). The values of lattice constants a and c given in this reference should be interchanged. The form of Sellmeier equations used in this reference should be corrected to n2 = A + B/(C − λ2) + D/(E − λ2).
    [CrossRef]
  4. V. Petrov, V. Badikov, G. Shevyrdyaeva, V. Panyutin, and V. Chizhikov, "Phase-matching properties and optical parametric amplification in single crystals of AgGaGeS4," Opt. Mater. 26, 217-222 (2004). The cut angle of sample-1 newly measured by Sumitomo Metal Mining Company using an x-ray diffraction meter is 2° different from that presented in this reference.
    [CrossRef]
  5. Y. M. Andreev, V. V. Badikov, V. G. Voevodin, L. G. Geiko, P. P. Geiko, M. V. Ivashchenko, A. I. Karapuzikov, and I. V. Sherstov, "Radiation resistance of nonlinear crystals at a wavelength of 9.55 μm," Quantum Electron. 31, 1075-1078 (2001).
    [CrossRef]
  6. P. G. Schunemann, K. T. Zawilski, and T. M. Pollak, "Horizontal gradient freeze growth of AgGaGeS4 and AgGaGe5Se12," J. Cryst. Growth 287, 248-251 (2006).
    [CrossRef]
  7. S. Das, C. Ghosh, S. Gangopadhyay, Y. M. Andreev, and V. V. Badikov, "AgGaGeS4 crystals for nonlinear laser device applications," Jpn. J. Appl. Phys. 45, 5795-5797 (2006).
    [CrossRef]
  8. T. J. Wang, Z. H. Kang, H. Z. Zhang, Z. S. Feng, Y. Jiang, J. Y. Gao, Y. M. Andreev, G. V. Lanskii, and A. V. Shaiduko, "Model and experimental investigation of frequency conversion in AgGaGexS2(1+x) (x = 0, 1) crystals," J. Phys. D 40, 1357-1362 (2007).
    [CrossRef]
  9. V. Petrov, V. Badikov, and V. Panyutin, "Quaternary nonlinear optical crystals for the mid-infrared spectral range from 5 to 12 micron," in Mid-Infrared Coherent Sources and Applications, NATO Science Book Series (Springer, in press).
  10. V. Badikov, G. Shevyrdyaeva, V. Chizhikov, V. Panyutin, G. Xu, V. Petrov, and F. Noack, "Phase-matched second-harmonic generation at 1064 nm in quaternary crystals of silver thiogermanogallate," Appl. Phys. Lett. 87, 2411131 (2005).
    [CrossRef]
  11. N. Saito, S. Wada, and H. Tashiro, "Dual-wavelength oscillation in an electronically tuned Ti:sapphire laser," J. Opt. Soc. Am. B 18, 1288-1296 (2001).
    [CrossRef]
  12. Y. M. Andreev, P. P. Geiko, V. V. Badikov, G. C. Bhar, S. Das, and A. K. Chaudhury, "Nonlinear optical properties of defect tetrahedral crystals HgGa2S4 and AgGaGeS4 and mixed chalcopyrite crystal Cd(0.4)Hg(0.6)Ga2S4," Nonlinear Opt. 29, 19-27 (2002). The form of Sellmeier equations used in this reference should be corrected to n2 = A + B/(λ2 − C) − Dλ2.
    [CrossRef]

2007

T. J. Wang, Z. H. Kang, H. Z. Zhang, Z. S. Feng, Y. Jiang, J. Y. Gao, Y. M. Andreev, G. V. Lanskii, and A. V. Shaiduko, "Model and experimental investigation of frequency conversion in AgGaGexS2(1+x) (x = 0, 1) crystals," J. Phys. D 40, 1357-1362 (2007).
[CrossRef]

2006

P. G. Schunemann, K. T. Zawilski, and T. M. Pollak, "Horizontal gradient freeze growth of AgGaGeS4 and AgGaGe5Se12," J. Cryst. Growth 287, 248-251 (2006).
[CrossRef]

S. Das, C. Ghosh, S. Gangopadhyay, Y. M. Andreev, and V. V. Badikov, "AgGaGeS4 crystals for nonlinear laser device applications," Jpn. J. Appl. Phys. 45, 5795-5797 (2006).
[CrossRef]

2005

V. Badikov, G. Shevyrdyaeva, V. Chizhikov, V. Panyutin, G. Xu, V. Petrov, and F. Noack, "Phase-matched second-harmonic generation at 1064 nm in quaternary crystals of silver thiogermanogallate," Appl. Phys. Lett. 87, 2411131 (2005).
[CrossRef]

2004

D. M. Ren, J. Z. Huang, Y. C. Qu, X. Y. Hu, Y. Andreev, P. Geiko, V. Badikov, and A. Shaiduko, "Optical properties and frequency conversion with AgGaGeS4 crystal," Chin. Phys. 13, 1468-1473 (2004). The values of lattice constants a and c given in this reference should be interchanged. The form of Sellmeier equations used in this reference should be corrected to n2 = A + B/(C − λ2) + D/(E − λ2).
[CrossRef]

V. Petrov, V. Badikov, G. Shevyrdyaeva, V. Panyutin, and V. Chizhikov, "Phase-matching properties and optical parametric amplification in single crystals of AgGaGeS4," Opt. Mater. 26, 217-222 (2004). The cut angle of sample-1 newly measured by Sumitomo Metal Mining Company using an x-ray diffraction meter is 2° different from that presented in this reference.
[CrossRef]

2003

M. V. Kabanov, Y. M. Andreev, V. V. Badikov, and P. P. Geiko, "Parametric frequency converters based on new nonlinear crystals," Russ. Phys. J. 46, 835-846 (2003). The values of lattice constants a and c, and Sellmeier coefficients Nx and Ny given in this reference, should be interchanged. The form of Sellmeier equations used in this reference should be corrected to n2 = A + B/(C − λ2) + D/(E − λ2).
[CrossRef]

2002

Y. M. Andreev, P. P. Geiko, V. V. Badikov, G. C. Bhar, S. Das, and A. K. Chaudhury, "Nonlinear optical properties of defect tetrahedral crystals HgGa2S4 and AgGaGeS4 and mixed chalcopyrite crystal Cd(0.4)Hg(0.6)Ga2S4," Nonlinear Opt. 29, 19-27 (2002). The form of Sellmeier equations used in this reference should be corrected to n2 = A + B/(λ2 − C) − Dλ2.
[CrossRef]

2001

Y. M. Andreev, V. V. Badikov, V. G. Voevodin, L. G. Geiko, P. P. Geiko, M. V. Ivashchenko, A. I. Karapuzikov, and I. V. Sherstov, "Radiation resistance of nonlinear crystals at a wavelength of 9.55 μm," Quantum Electron. 31, 1075-1078 (2001).
[CrossRef]

N. Saito, S. Wada, and H. Tashiro, "Dual-wavelength oscillation in an electronically tuned Ti:sapphire laser," J. Opt. Soc. Am. B 18, 1288-1296 (2001).
[CrossRef]

1991

V. V. Badikov, A. G. Tyulyupa, G. S. Shevyrdyaeva, and S. G. Sheina, "Solid solutions in the AgGaS2-GeS2 and AgGaSe2-GeSe2 systems," Inorg. Mater. 27, 177-180 (1991).

Appl. Phys. Lett.

V. Badikov, G. Shevyrdyaeva, V. Chizhikov, V. Panyutin, G. Xu, V. Petrov, and F. Noack, "Phase-matched second-harmonic generation at 1064 nm in quaternary crystals of silver thiogermanogallate," Appl. Phys. Lett. 87, 2411131 (2005).
[CrossRef]

Chin. Phys.

D. M. Ren, J. Z. Huang, Y. C. Qu, X. Y. Hu, Y. Andreev, P. Geiko, V. Badikov, and A. Shaiduko, "Optical properties and frequency conversion with AgGaGeS4 crystal," Chin. Phys. 13, 1468-1473 (2004). The values of lattice constants a and c given in this reference should be interchanged. The form of Sellmeier equations used in this reference should be corrected to n2 = A + B/(C − λ2) + D/(E − λ2).
[CrossRef]

Inorg. Mater.

V. V. Badikov, A. G. Tyulyupa, G. S. Shevyrdyaeva, and S. G. Sheina, "Solid solutions in the AgGaS2-GeS2 and AgGaSe2-GeSe2 systems," Inorg. Mater. 27, 177-180 (1991).

J. Cryst. Growth

P. G. Schunemann, K. T. Zawilski, and T. M. Pollak, "Horizontal gradient freeze growth of AgGaGeS4 and AgGaGe5Se12," J. Cryst. Growth 287, 248-251 (2006).
[CrossRef]

J. Opt. Soc. Am. B

J. Phys. D

T. J. Wang, Z. H. Kang, H. Z. Zhang, Z. S. Feng, Y. Jiang, J. Y. Gao, Y. M. Andreev, G. V. Lanskii, and A. V. Shaiduko, "Model and experimental investigation of frequency conversion in AgGaGexS2(1+x) (x = 0, 1) crystals," J. Phys. D 40, 1357-1362 (2007).
[CrossRef]

Jpn. J. Appl. Phys.

S. Das, C. Ghosh, S. Gangopadhyay, Y. M. Andreev, and V. V. Badikov, "AgGaGeS4 crystals for nonlinear laser device applications," Jpn. J. Appl. Phys. 45, 5795-5797 (2006).
[CrossRef]

Nonlinear Opt.

Y. M. Andreev, P. P. Geiko, V. V. Badikov, G. C. Bhar, S. Das, and A. K. Chaudhury, "Nonlinear optical properties of defect tetrahedral crystals HgGa2S4 and AgGaGeS4 and mixed chalcopyrite crystal Cd(0.4)Hg(0.6)Ga2S4," Nonlinear Opt. 29, 19-27 (2002). The form of Sellmeier equations used in this reference should be corrected to n2 = A + B/(λ2 − C) − Dλ2.
[CrossRef]

Opt. Mater.

V. Petrov, V. Badikov, G. Shevyrdyaeva, V. Panyutin, and V. Chizhikov, "Phase-matching properties and optical parametric amplification in single crystals of AgGaGeS4," Opt. Mater. 26, 217-222 (2004). The cut angle of sample-1 newly measured by Sumitomo Metal Mining Company using an x-ray diffraction meter is 2° different from that presented in this reference.
[CrossRef]

Quantum Electron.

Y. M. Andreev, V. V. Badikov, V. G. Voevodin, L. G. Geiko, P. P. Geiko, M. V. Ivashchenko, A. I. Karapuzikov, and I. V. Sherstov, "Radiation resistance of nonlinear crystals at a wavelength of 9.55 μm," Quantum Electron. 31, 1075-1078 (2001).
[CrossRef]

Russ. Phys. J.

M. V. Kabanov, Y. M. Andreev, V. V. Badikov, and P. P. Geiko, "Parametric frequency converters based on new nonlinear crystals," Russ. Phys. J. 46, 835-846 (2003). The values of lattice constants a and c, and Sellmeier coefficients Nx and Ny given in this reference, should be interchanged. The form of Sellmeier equations used in this reference should be corrected to n2 = A + B/(C − λ2) + D/(E − λ2).
[CrossRef]

Other

V. Petrov, V. Badikov, and V. Panyutin, "Quaternary nonlinear optical crystals for the mid-infrared spectral range from 5 to 12 micron," in Mid-Infrared Coherent Sources and Applications, NATO Science Book Series (Springer, in press).

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Figures (5)

Fig. 1
Fig. 1

IR transmission curves of AgGaGeS 4 . The crystal lengths along the light propagation direction are 5.6   mm for x and y polarizations (‖x and ‖y), and 2.8   mm for z polarization (‖z) in sample-1, and 6.3   mm in sample-2.

Fig. 2
Fig. 2

Phase-matching curves for type-1 DFG of a dual-wavelength emitting Ti:sapphire laser in AgGaGeS 4 at φ = 35 ° ( θ = 90 ° ) . The dashed lines (B), (D), and (P) are calculated with the index formulas of Badikov et al. [10], Das et al. [7], and Petrov et al. [4], respectively. The solid line (M) is our theoretical curve: ○, experimental points measured with sample-1.

Fig. 3
Fig. 3

Phase-matching curves for type-1 DFG of the dual-wavelength emitting Ti:sapphire laser in the xy plane of AgGaGeS 4 . The pump wavelength is 0.7498   μm . The dashed lines (B) and (P) are the same as defined in Fig. 2. (D) is omitted for clarity. The solid line (M) is our theoretical curve: ○, experimental points measured with sample-1.

Fig. 4
Fig. 4

Phase-matching curves for type-1 DFG between the signal and idler outputs of a KTP/OPO pumped at 0.5321   μm in the xy plane of AgGaGeS 4 . The dashed lines (B) and (P) are the same as defined in Fig. 2. (D) is omitted for clarity. The solid line (M) is our theoretical curve: ○, experimental points measured with sample-1.

Fig. 5
Fig. 5

Phase-matching curves for type-1 SHG in the xy plane of AgGaGeS 4 . The dashed lines (B), (D), and (P) are the same as defined in Fig. 2. The solid line (M) is our theoretical curve: ■, experimental points from [2] and [3]; •, experimental points from [7]; ▴, experimental points from [8].

Equations (4)

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n x = 5.0771 + 0.1691 λ 2 0.0490 0.001583 λ 2 ,
n y = 5.3172 + 0.1777 λ 2 0.0721 0.002437 λ 2 ,
n z = 5.3179 + 0.1776 λ 2 0.0728 0.002437 λ 2 ,
( 0.73 < λ < 12 ) ,

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