Abstract

A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123  nm. With an incident pump power of 16   W, an average output power of 3 .1   W with a Q-switched pulse width of 77   ns at a pulse repetition rate of 100   kHz was obtained.

© 2007 Optical Society of America

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  1. W. Koechner, Solid-State Laser Engineering, Vol. 1 of Optical Sciences, 5th ed. (Springer, 1999).
  2. Y. Kaneda, M. Oka, H. Masuda, and S. Kubota, "7.6 W of continuous-wave radiation in a TEM00 mode from a laser-diode end-pumped Nd:YAG laser," Opt. Lett. 17, 1003-1005 (1992).
    [CrossRef] [PubMed]
  3. T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
    [CrossRef]
  4. N. Moore, W. A. Clarkson, D. C. Hanna, S. Lehmann, and J. Bösenberg, "Efficient operation of a diode-bar-pumped Nd:YAG laser on the low-gain 1123-nm line," Appl. Opt. 38, 5761-5764 (1999).
    [CrossRef]
  5. X. Guo, M. Chen, G. Li, B. Zhang, J. Yang, Z. Zhang, and Y. Wang, "Diode-pumped 1123-nm Nd:YAG laser," Chin. Opt. Lett. 2, 402-404 (2004).
  6. Z. Cai, M. Chen, Z. Zhang, R. Zhou, W. Wen, X. Ding, and J. Yao, "Diode end-pumped 1123-nm Nd:YAG laser with 2.6-W output power," Chin. Opt. Lett. 3, 281-282 (2005).
  7. Y. F. Chen and Y. P. Lan, "Diode-pumped passively Q-switched Nd:YAG laser at 1123 nm," Appl. Phys. B 79, 29-31 (2004).
    [CrossRef]
  8. Y. F. Chen, Y. P. Lan, and S. W. Tsai, "High-power diode-pumped actively Q-switched Nd:YAG laser at 1123 nm," Opt. Commun. 234, 309-313 (2004).
    [CrossRef]
  9. R. Paschotta, N. Moore, W. A. Clarkson, A. C. Tropper, D. C. Hannd, and G. Mazé, "230 mW of blue light from a thulium doped upconversion fiber," IEEE J. Sel. Top. Quantum Electron. 3, 1100-1102 (1997).
    [CrossRef]
  10. G. J. Spühler, R. Paschotta, R. Fluck, B. Braun, M. Moser, G. Zhang, E. Gini, and U. Keller, "Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers," J. Opt. Soc. Am. B 16, 376-388 (1999).
    [CrossRef]
  11. R. Fluck, G. Zhang, U. Keller, K. J. Weingarten, and M. Moser, "Diode-pumped passively mode-locked 1.3-μm Nd:YVO4 and Nd:YLF lasers," Opt. Lett. 21, 1378-1380 (1996).
    [CrossRef] [PubMed]
  12. F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
    [CrossRef]
  13. S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
    [CrossRef]
  14. T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001).
    [CrossRef]
  15. G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001).
    [CrossRef]

2005 (1)

2004 (3)

Y. F. Chen and Y. P. Lan, "Diode-pumped passively Q-switched Nd:YAG laser at 1123 nm," Appl. Phys. B 79, 29-31 (2004).
[CrossRef]

Y. F. Chen, Y. P. Lan, and S. W. Tsai, "High-power diode-pumped actively Q-switched Nd:YAG laser at 1123 nm," Opt. Commun. 234, 309-313 (2004).
[CrossRef]

X. Guo, M. Chen, G. Li, B. Zhang, J. Yang, Z. Zhang, and Y. Wang, "Diode-pumped 1123-nm Nd:YAG laser," Chin. Opt. Lett. 2, 402-404 (2004).

2002 (1)

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

2001 (3)

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001).
[CrossRef]

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001).
[CrossRef]

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

1999 (2)

1997 (2)

T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
[CrossRef]

R. Paschotta, N. Moore, W. A. Clarkson, A. C. Tropper, D. C. Hannd, and G. Mazé, "230 mW of blue light from a thulium doped upconversion fiber," IEEE J. Sel. Top. Quantum Electron. 3, 1100-1102 (1997).
[CrossRef]

1996 (1)

1992 (1)

Bösenberg, J.

Braun, B.

Bugge, F.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Cai, Z.

Chen, M.

Chen, Y. F.

Y. F. Chen and Y. P. Lan, "Diode-pumped passively Q-switched Nd:YAG laser at 1123 nm," Appl. Phys. B 79, 29-31 (2004).
[CrossRef]

Y. F. Chen, Y. P. Lan, and S. W. Tsai, "High-power diode-pumped actively Q-switched Nd:YAG laser at 1123 nm," Opt. Commun. 234, 309-313 (2004).
[CrossRef]

Chen, Z.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001).
[CrossRef]

Chitica, N.

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

Clarkson, W. A.

N. Moore, W. A. Clarkson, D. C. Hanna, S. Lehmann, and J. Bösenberg, "Efficient operation of a diode-bar-pumped Nd:YAG laser on the low-gain 1123-nm line," Appl. Opt. 38, 5761-5764 (1999).
[CrossRef]

R. Paschotta, N. Moore, W. A. Clarkson, A. C. Tropper, D. C. Hannd, and G. Mazé, "230 mW of blue light from a thulium doped upconversion fiber," IEEE J. Sel. Top. Quantum Electron. 3, 1100-1102 (1997).
[CrossRef]

Ding, X.

Erbert, G.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Fluck, R.

Fricke, J.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Gini, E.

Gouardes, E.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001).
[CrossRef]

Gramlich, S.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Guo, X.

Haiml, M.

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001).
[CrossRef]

Hammar, M.

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

Hanna, D. C.

Hannd, D. C.

R. Paschotta, N. Moore, W. A. Clarkson, A. C. Tropper, D. C. Hannd, and G. Mazé, "230 mW of blue light from a thulium doped upconversion fiber," IEEE J. Sel. Top. Quantum Electron. 3, 1100-1102 (1997).
[CrossRef]

Heine, F.

T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
[CrossRef]

Huber, G.

T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
[CrossRef]

Iga, K.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001).
[CrossRef]

Kaneda, Y.

Kawaguchi, M.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001).
[CrossRef]

Keller, U.

Kellner, T.

T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
[CrossRef]

Koechner, W.

W. Koechner, Solid-State Laser Engineering, Vol. 1 of Optical Sciences, 5th ed. (Springer, 1999).

Kondo, T.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001).
[CrossRef]

Koyama, F.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001).
[CrossRef]

Kubota, S.

Lan, Y. P.

Y. F. Chen, Y. P. Lan, and S. W. Tsai, "High-power diode-pumped actively Q-switched Nd:YAG laser at 1123 nm," Opt. Commun. 234, 309-313 (2004).
[CrossRef]

Y. F. Chen and Y. P. Lan, "Diode-pumped passively Q-switched Nd:YAG laser at 1123 nm," Appl. Phys. B 79, 29-31 (2004).
[CrossRef]

Lehmann, S.

Li, G.

Masuda, H.

Mazé, G.

R. Paschotta, N. Moore, W. A. Clarkson, A. C. Tropper, D. C. Hannd, and G. Mazé, "230 mW of blue light from a thulium doped upconversion fiber," IEEE J. Sel. Top. Quantum Electron. 3, 1100-1102 (1997).
[CrossRef]

Miyamoto, T.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001).
[CrossRef]

Mogg, S.

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

Moore, N.

N. Moore, W. A. Clarkson, D. C. Hanna, S. Lehmann, and J. Bösenberg, "Efficient operation of a diode-bar-pumped Nd:YAG laser on the low-gain 1123-nm line," Appl. Opt. 38, 5761-5764 (1999).
[CrossRef]

R. Paschotta, N. Moore, W. A. Clarkson, A. C. Tropper, D. C. Hannd, and G. Mazé, "230 mW of blue light from a thulium doped upconversion fiber," IEEE J. Sel. Top. Quantum Electron. 3, 1100-1102 (1997).
[CrossRef]

Moser, M.

Oka, M.

Paschotta, R.

G. J. Spühler, R. Paschotta, R. Fluck, B. Braun, M. Moser, G. Zhang, E. Gini, and U. Keller, "Experimentally confirmed design guidelines for passively Q-switched microchip lasers using semiconductor saturable absorbers," J. Opt. Soc. Am. B 16, 376-388 (1999).
[CrossRef]

R. Paschotta, N. Moore, W. A. Clarkson, A. C. Tropper, D. C. Hannd, and G. Mazé, "230 mW of blue light from a thulium doped upconversion fiber," IEEE J. Sel. Top. Quantum Electron. 3, 1100-1102 (1997).
[CrossRef]

Reffert, S.

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001).
[CrossRef]

Schatz, R.

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

Schlenker, D.

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001).
[CrossRef]

Spühler, G. J.

Staske, R.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Tropper, A. C.

R. Paschotta, N. Moore, W. A. Clarkson, A. C. Tropper, D. C. Hannd, and G. Mazé, "230 mW of blue light from a thulium doped upconversion fiber," IEEE J. Sel. Top. Quantum Electron. 3, 1100-1102 (1997).
[CrossRef]

Tsai, S. W.

Y. F. Chen, Y. P. Lan, and S. W. Tsai, "High-power diode-pumped actively Q-switched Nd:YAG laser at 1123 nm," Opt. Commun. 234, 309-313 (2004).
[CrossRef]

Wang, Y.

Weingarten, K. J.

Wen, W.

Wenzel, H.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Weyers, M.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Yang, J.

Yao, J.

Zeimer, U.

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

Zhang, B.

Zhang, G.

Zhang, Z.

Zhou, R.

Appl. Opt. (1)

Appl. Phys. B (2)

Y. F. Chen and Y. P. Lan, "Diode-pumped passively Q-switched Nd:YAG laser at 1123 nm," Appl. Phys. B 79, 29-31 (2004).
[CrossRef]

T. Kellner, F. Heine, and G. Huber, "Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5," Appl. Phys. B 65, 789-902 (1997).
[CrossRef]

Appl. Phys. Lett. (3)

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, and U. Keller, "Output-coupling semiconductor saturable absorber mirror," Appl. Phys. Lett. 78, 2733-2735 (2001).
[CrossRef]

F. Bugge, G. Erbert, J. Fricke, S. Gramlich, R. Staske, H. Wenzel, U. Zeimer, and M. Weyers, "12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells," Appl. Phys. Lett. 79, 1965-1967 (2001).
[CrossRef]

S. Mogg, N. Chitica, R. Schatz, and M. Hammar, "Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes," Appl. Phys. Lett. 81, 2334-2336 (2002).
[CrossRef]

Chin. Opt. Lett. (2)

IEEE J. Sel. Top. Quantum Electron. (1)

R. Paschotta, N. Moore, W. A. Clarkson, A. C. Tropper, D. C. Hannd, and G. Mazé, "230 mW of blue light from a thulium doped upconversion fiber," IEEE J. Sel. Top. Quantum Electron. 3, 1100-1102 (1997).
[CrossRef]

J. Opt. Soc. Am. B (1)

Jpn. J. Appl. Phys. (1)

T. Kondo, D. Schlenker, T. Miyamoto, Z. Chen, M. Kawaguchi, E. Gouardes, F. Koyama, and K. Iga, "Lasing characteristics of 1.2 μm highly strained GaInAs/GaAs quantum well lasers," Jpn. J. Appl. Phys. 40, 467-471 (2001).
[CrossRef]

Opt. Commun. (1)

Y. F. Chen, Y. P. Lan, and S. W. Tsai, "High-power diode-pumped actively Q-switched Nd:YAG laser at 1123 nm," Opt. Commun. 234, 309-313 (2004).
[CrossRef]

Opt. Lett. (2)

Other (1)

W. Koechner, Solid-State Laser Engineering, Vol. 1 of Optical Sciences, 5th ed. (Springer, 1999).

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Figures (5)

Fig. 1
Fig. 1

(a) Measured results for the low-intensity reflectivity and room-temperature PL spectrum of the InGaAs QWS SESAM. (b) Measured results for the low-intensity transmission spectrum.

Fig. 2
Fig. 2

Schematic of a diode-pumped passively Q-switched Nd:YAG laser at 1123   nm . HR, high reflection; HT, high transmission.

Fig. 3
Fig. 3

Average output powers at 1123   nm with respect to the incident pump power in cw and passively Q-switching operations.

Fig. 4
Fig. 4

Experimental results for the pulse repetition rate and the pulse width versus the incident pump power.

Fig. 5
Fig. 5

(a) Typical oscilloscope trace of a train of output pulses and (b) expanded shape of a single pulse.

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