Abstract

A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123  nm. With an incident pump power of 16   W, an average output power of 3 .1   W with a Q-switched pulse width of 77   ns at a pulse repetition rate of 100   kHz was obtained.

© 2007 Optical Society of America

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