Abstract

We show what we believe to be a novel way to use silicon in infrared radio communication as a suitable material for the realization of optical diffusers in the range of 8501600  nm. A crystalline silicon wafer is made porous by means of electrochemical etching. The porous silicon produced is optically characterized, and measurements report a high reflectance in the band of interest. We also study the angular distribution of diffused radiation by the porous silicon surface at different angles of incident radiation. Measurements show that radiation diffuses in a quasi-Lambertian manner, confirming the good performance of this material as an incident radiation diffuser.

© 2006 Optical Society of America

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