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Development of line-shaped optical system for green laser annealing used in the manufacture of low-temperature poly-Si thin-film transistors

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Abstract

We have developed a new optical system that transforms the circle profile beam generated with near-Gaussian intensity distribution by a pulse green laser (YAG2ω laser; second harmonics of a Q-switched Nd:YAG laser) into a line-profile beam. For homogenization in the longitudinal direction, we employed a waveguide plate-type homogenizer. We successfully reduced interference fringes. In the width direction, the laser beam was focused up to the limited M2 value. This transformed beam has a uniform distribution to within 5% in the longitudinal direction, and it is approximately 100  mm long and 40  μm wide.

© 2006 Optical Society of America

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