Abstract

A steady-state numerical model of wavelength conversion through cross-gain modulation in semiconductor optical amplifiers is described, which includes the spatial variations of the carrier density, gain coefficient, differential gain, and internal loss. Of particular interest is the analytic gain coefficient model, which is applied to the semiconductor optical amplifier converter problem for the first time to our knowledge. The model is used to compare performances of upconverters and downconverters for cases of long and short device lengths, and in large and small signal regimes. Comparisons with results of other studies are presented.

© 2006 Optical Society of America

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