Abstract

A simplified multiwavelength prototype of an axially symmetric diode laser device based on stacks made of single emitters has been made, and the performance of the device has been demonstrated experimentally. The results verify that kilowatt-level light power can be focused into a circular spot with a 1/e2 diameter of 360  μm, a focal length of 100  mm, and a numerical aperture of 0.24, thus producing an average power density in excess of 10kW/mm2 and a brightness of 6×1010W  m2sr1. The experiments also predict that it will be possible to increase these values to more than 60kW/mm2 and 3×1011W  m2sr1.

© 2006 Optical Society of America

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References

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  1. N. Pikhtin, S. Slipchenko, Z. Sokolova, A. Stankevich, D. Vinokurov, I. Tarasov, and Z. Alferov, "16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure," Electron. Lett. 40, 1413-1414 (2004).
    [CrossRef]
  2. M. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla, and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electron. Lett. 41, 1011-1013 (2005).
    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef] [PubMed]
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    [CrossRef]

2005

M. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla, and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electron. Lett. 41, 1011-1013 (2005).
[CrossRef]

P. Harkko, "Diode laser light field collimation by a micro lens," Master of Science thesis (Tampere University of Technology, 2005); in Finnish.

2004

H. Ohashi, X. Gao, H. Okamoto, M. Takasaka, M. Saito, and K. Shinoda, "Enhancement of emitting power density with a beam-shaping technique for a high-power laser-diode array stack," Opt. Eng. 43, 2206-2207 (2004).
[CrossRef]

N. Pikhtin, S. Slipchenko, Z. Sokolova, A. Stankevich, D. Vinokurov, I. Tarasov, and Z. Alferov, "16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure," Electron. Lett. 40, 1413-1414 (2004).
[CrossRef]

T. Alahautala, E. Lassila, and R. Hernberg, "High power density beam from narrow diode-laser arrays in axial symmetry," Appl. Opt. 43, 2760-2766 (2004).
[CrossRef] [PubMed]

1997

1989

1897

A. König, "Double image micrometer," U.S. patent 587,443 ( 3 August1897).

Alahautala, T.

Alferov, Z.

N. Pikhtin, S. Slipchenko, Z. Sokolova, A. Stankevich, D. Vinokurov, I. Tarasov, and Z. Alferov, "16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure," Electron. Lett. 40, 1413-1414 (2004).
[CrossRef]

Bihlmann, G.

M. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla, and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electron. Lett. 41, 1011-1013 (2005).
[CrossRef]

DeFeo, W.

Du, K.

Falter, S.

Fan, T.

Gao, X.

H. Ohashi, X. Gao, H. Okamoto, M. Takasaka, M. Saito, and K. Shinoda, "Enhancement of emitting power density with a beam-shaping technique for a high-power laser-diode array stack," Opt. Eng. 43, 2206-2207 (2004).
[CrossRef]

Hakamo, M.

S. Kuusiluoma, M. Hakamo, E. Lassila, P. Heino, R. Hernberg, and E. Ristolainen, "Assembly of high power diode laser emitters," presented at the 2004 IEEE International Conference on Semiconductor Electronics, Kuala Lumpur, Malaysia, 7-9 December 2004.

Harkko, P.

P. Harkko, "Diode laser light field collimation by a micro lens," Master of Science thesis (Tampere University of Technology, 2005); in Finnish.

Heino, P.

S. Kuusiluoma, M. Hakamo, E. Lassila, P. Heino, R. Hernberg, and E. Ristolainen, "Assembly of high power diode laser emitters," presented at the 2004 IEEE International Conference on Semiconductor Electronics, Kuala Lumpur, Malaysia, 7-9 December 2004.

Hernberg, R.

T. Alahautala, E. Lassila, and R. Hernberg, "High power density beam from narrow diode-laser arrays in axial symmetry," Appl. Opt. 43, 2760-2766 (2004).
[CrossRef] [PubMed]

S. Kuusiluoma, M. Hakamo, E. Lassila, P. Heino, R. Hernberg, and E. Ristolainen, "Assembly of high power diode laser emitters," presented at the 2004 IEEE International Conference on Semiconductor Electronics, Kuala Lumpur, Malaysia, 7-9 December 2004.

Kaufel, G.

M. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla, and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electron. Lett. 41, 1011-1013 (2005).
[CrossRef]

Kelemen, M.

M. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla, and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electron. Lett. 41, 1011-1013 (2005).
[CrossRef]

König, A.

A. König, "Double image micrometer," U.S. patent 587,443 ( 3 August1897).

Kuusiluoma, S.

S. Kuusiluoma, M. Hakamo, E. Lassila, P. Heino, R. Hernberg, and E. Ristolainen, "Assembly of high power diode laser emitters," presented at the 2004 IEEE International Conference on Semiconductor Electronics, Kuala Lumpur, Malaysia, 7-9 December 2004.

Lassila, E.

T. Alahautala, E. Lassila, and R. Hernberg, "High power density beam from narrow diode-laser arrays in axial symmetry," Appl. Opt. 43, 2760-2766 (2004).
[CrossRef] [PubMed]

S. Kuusiluoma, M. Hakamo, E. Lassila, P. Heino, R. Hernberg, and E. Ristolainen, "Assembly of high power diode laser emitters," presented at the 2004 IEEE International Conference on Semiconductor Electronics, Kuala Lumpur, Malaysia, 7-9 December 2004.

Liao, Y.

Loosen, P.

Mikulla, M.

M. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla, and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electron. Lett. 41, 1011-1013 (2005).
[CrossRef]

Moritz, R.

M. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla, and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electron. Lett. 41, 1011-1013 (2005).
[CrossRef]

Ohashi, H.

H. Ohashi, X. Gao, H. Okamoto, M. Takasaka, M. Saito, and K. Shinoda, "Enhancement of emitting power density with a beam-shaping technique for a high-power laser-diode array stack," Opt. Eng. 43, 2206-2207 (2004).
[CrossRef]

Okamoto, H.

H. Ohashi, X. Gao, H. Okamoto, M. Takasaka, M. Saito, and K. Shinoda, "Enhancement of emitting power density with a beam-shaping technique for a high-power laser-diode array stack," Opt. Eng. 43, 2206-2207 (2004).
[CrossRef]

Pikhtin, N.

N. Pikhtin, S. Slipchenko, Z. Sokolova, A. Stankevich, D. Vinokurov, I. Tarasov, and Z. Alferov, "16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure," Electron. Lett. 40, 1413-1414 (2004).
[CrossRef]

Poprawe, R.

Quade, M.

Ristolainen, E.

S. Kuusiluoma, M. Hakamo, E. Lassila, P. Heino, R. Hernberg, and E. Ristolainen, "Assembly of high power diode laser emitters," presented at the 2004 IEEE International Conference on Semiconductor Electronics, Kuala Lumpur, Malaysia, 7-9 December 2004.

Saito, M.

H. Ohashi, X. Gao, H. Okamoto, M. Takasaka, M. Saito, and K. Shinoda, "Enhancement of emitting power density with a beam-shaping technique for a high-power laser-diode array stack," Opt. Eng. 43, 2206-2207 (2004).
[CrossRef]

Sanchez, A.

Shinoda, K.

H. Ohashi, X. Gao, H. Okamoto, M. Takasaka, M. Saito, and K. Shinoda, "Enhancement of emitting power density with a beam-shaping technique for a high-power laser-diode array stack," Opt. Eng. 43, 2206-2207 (2004).
[CrossRef]

Slipchenko, S.

N. Pikhtin, S. Slipchenko, Z. Sokolova, A. Stankevich, D. Vinokurov, I. Tarasov, and Z. Alferov, "16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure," Electron. Lett. 40, 1413-1414 (2004).
[CrossRef]

Sokolova, Z.

N. Pikhtin, S. Slipchenko, Z. Sokolova, A. Stankevich, D. Vinokurov, I. Tarasov, and Z. Alferov, "16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure," Electron. Lett. 40, 1413-1414 (2004).
[CrossRef]

Stankevich, A.

N. Pikhtin, S. Slipchenko, Z. Sokolova, A. Stankevich, D. Vinokurov, I. Tarasov, and Z. Alferov, "16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure," Electron. Lett. 40, 1413-1414 (2004).
[CrossRef]

Takasaka, M.

H. Ohashi, X. Gao, H. Okamoto, M. Takasaka, M. Saito, and K. Shinoda, "Enhancement of emitting power density with a beam-shaping technique for a high-power laser-diode array stack," Opt. Eng. 43, 2206-2207 (2004).
[CrossRef]

Tarasov, I.

N. Pikhtin, S. Slipchenko, Z. Sokolova, A. Stankevich, D. Vinokurov, I. Tarasov, and Z. Alferov, "16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure," Electron. Lett. 40, 1413-1414 (2004).
[CrossRef]

Vinokurov, D.

N. Pikhtin, S. Slipchenko, Z. Sokolova, A. Stankevich, D. Vinokurov, I. Tarasov, and Z. Alferov, "16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure," Electron. Lett. 40, 1413-1414 (2004).
[CrossRef]

Weber, J.

M. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla, and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electron. Lett. 41, 1011-1013 (2005).
[CrossRef]

Weimann, G.

M. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla, and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electron. Lett. 41, 1011-1013 (2005).
[CrossRef]

Zhang, J.

Appl. Opt.

Electron. Lett.

N. Pikhtin, S. Slipchenko, Z. Sokolova, A. Stankevich, D. Vinokurov, I. Tarasov, and Z. Alferov, "16 W continuous-wave output power from 100 μm-aperture laser with quantum well asymmetric heterostructure," Electron. Lett. 40, 1413-1414 (2004).
[CrossRef]

M. Kelemen, J. Weber, G. Kaufel, G. Bihlmann, R. Moritz, M. Mikulla, and G. Weimann, "Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power," Electron. Lett. 41, 1011-1013 (2005).
[CrossRef]

Opt. Eng.

H. Ohashi, X. Gao, H. Okamoto, M. Takasaka, M. Saito, and K. Shinoda, "Enhancement of emitting power density with a beam-shaping technique for a high-power laser-diode array stack," Opt. Eng. 43, 2206-2207 (2004).
[CrossRef]

Opt. Lett.

Other

S. Kuusiluoma, M. Hakamo, E. Lassila, P. Heino, R. Hernberg, and E. Ristolainen, "Assembly of high power diode laser emitters," presented at the 2004 IEEE International Conference on Semiconductor Electronics, Kuala Lumpur, Malaysia, 7-9 December 2004.

P. Harkko, "Diode laser light field collimation by a micro lens," Master of Science thesis (Tampere University of Technology, 2005); in Finnish.

A. König, "Double image micrometer," U.S. patent 587,443 ( 3 August1897).

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Figures (8)

Fig. 1
Fig. 1

DL after mounting.

Fig. 2
Fig. 2

Results of DL characterization.

Fig. 3
Fig. 3

Macrochannel stack.

Fig. 4
Fig. 4

Microchannel stack.

Fig. 5
Fig. 5

Focus of microchannel stack.

Fig. 6
Fig. 6

Prototype.

Fig. 7
Fig. 7

Focus of prototype.

Fig. 8
Fig. 8

Practical limit of prototype's focus.

Tables (1)

Tables Icon

Table 1 Results of FAC of Macrochannel Stacks

Equations (91)

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1 / e 2
360   μm
100   mm
10 kW / mm 2
6 × 10 10 W  m 2 sr 1
60 kW / mm 2
3 × 10 11 W  m 2 sr 1
16   W
6.6 × 10 12
W  m 2 sr 1
B = P / A Ω
10   mm
B b
B e = B b / f
10   mm
150   μm
965   nm
90   μm
960   nm
2.5 mm 2
9   K
1.1   mm
1.0   mm
( 1   mrad )
< 1   μm
2.2   mm
1.1   mm
30   mm
10   mm
1 / e 2
100   μm
90   μm
40   μm
50   W
( 1.1   mm
1 / e 2
7 kW / mm 2
9 × 10 10   W   m 2 sr 1
965   nm
100   mm
10   mm
100   mm
11   mm
13   mm
1 / e 2
360   μm
280   μm
150   μm
1 / e 2
360   μm
5   W
90%
135   W
10   kW / mm 2
6 × 10 10   W   m 2 sr 1
50   mm
100   mm
48   mm
6   mm
1 / e 2
200   μm
240   μm
140   μm
1 / e 2
240   μm
100   mm
24 kW / mm 2
1 × 10 11   W   m 2 sr 1
1 / e 2
200   μm
2   kW
60 kW / mm 2
3 × 10 11   W   m 2 sr 1
1 / e 2
100   mm
360   μm
280   μm
150   μm
1 / e 2
360   μm
1.1   kW
10 kW / mm 2
6 × 10 10   W   m 2 sr 1
1 / e 2
200   μm
2   kW
1 / e 2
200   μm
100   mm
60 kW / mm 2
3 × 10 11   W   m 2 sr 1

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