Abstract

Silicon and fused-silica targets are used as the starting materials for depositing silicon oxide (SiO2) films. The SiO 2 films are prepared by a dual ion beam sputtering deposition system with a main ion source and an ion-assisted source with different working gases. The films deposited are then examined and compared by using a visible spectrophotometer, a Fourier-transform IR spectrophotometer, an atomic force microscope, and contact angle instruments. A Twyman–Green interferometer is employed to study the film stress by phase-shift interferometry. All the SiO 2 films show excellent optical properties with extra-low extinction coefficients (below 2×105) and have no water absorption. When the working gas is O 2 for the ion-assisted source, the deposited SiO 2 films show good properties in terms of stress and roughness and with a good molecular bonding structure order for both targets. However, SiO 2 films deposited from the fused-silica target had a larger contact angle, while those deposited from the silicon target had 2.5 times the deposition rate.

© 2006 Optical Society of America

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