Abstract

Vanadium dioxide (VO2) and vanadium pentoxide (V 2O 5) thin films are irradiated by a near-infrared continuous-wave laser beam and the dynamic optical limiting performance is measured. The temperature varying with time of the films induced by a laser beam is also recorded by an IR thermal sensor. Under the irradiation of a laser beam with an intensity of 255W/cm2 and a spot diameter of 2  mm, the laser beam transmittance of the VO2 film decreases from 47% before phase transition to 28% after phase transition, and the response time is 200  ms; the laser beam transmittance of the V 2O 5 film decreases from 51% before phase transition to 24% after phase transition, and the response time is 40  ms. The optical limiting is realized by this laser heating-induced phase transition.

© 2006 Optical Society of America

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  1. F. J. Morin, "Oxides which show a metal-to-insulator transition at the Neel temperature," Phys. Rev. Lett. 3, 34-36 (1959).
    [CrossRef]
  2. W. R. Roach, "Holographic storage in VO2," Appl. Phys. Lett. 19, 453-455 (1971).
    [CrossRef]
  3. F. C. Case, "Modifications in the phase transition properties of predeposited VO2 films," J. Vac. Sci. Technol. A 2, 1509-1512 (1984).
    [CrossRef]
  4. E. E. Chain, "Optical properties of vanadium dioxide and vanadium pentoxide thin films," Appl. Opt. 30, 2782-2787 (1991).
    [CrossRef] [PubMed]
  5. M. F. Becker, A. B. Buckman, and R. M. Walser, "Femtosecond laser excitation of the semiconductor-metal phase transition in VO2," Appl. Phys. Lett. 65, 1507-1509 (1994).
    [CrossRef]
  6. D. C. Yin, N. K. Xu, J. Y. Zhang, and X. L. Zheng, "Vanadium dioxide films with good electrical switching property," J. Phys. D 29, 1051-1057 (1996).
    [CrossRef]
  7. M. A. Sobhan, M. R. Islam, and K. A. Khan, "Preparation and properties of V2O5 thin films for energy-efficient selective-surface applications," Appl. Energy 64, 345-351 (1999).
    [CrossRef]
  8. X. J. Wang, H. D. Li, Y. J. Fei, X. Wang, Y. Y. Xiong, Y. X. Nie, and K. A. Feng, "XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering," Appl. Surf. Sci. 177, 8-14 (2001).
    [CrossRef]
  9. S. H. Chen, H. Ma, X. J. Yi, H. C. Wang, X. Tao, M. X. Chen, X. W. Li, and C. J. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Technol. 45, 239-242 (2004).
    [CrossRef]
  10. S. H. Chen, H. Ma, X. J. Yi, X. Tao, H. C. Wang, and C. J. Ke, "Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation," Sens. Actuators A 115, 28-31 (2004).
    [CrossRef]
  11. J. B. Goodenough, "The two components of the crystallographic transition in VO2," J. Solid State Chem. 3, 490-500 (1971).
    [CrossRef]
  12. S. W. Lu, L. S. Hou, and F. X. Gan, "Preparation and optical properties of phase-change VO2 thin films," J. Mater. Sci. 28, 2169-2177 (1993).
    [CrossRef]

2004

S. H. Chen, H. Ma, X. J. Yi, H. C. Wang, X. Tao, M. X. Chen, X. W. Li, and C. J. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Technol. 45, 239-242 (2004).
[CrossRef]

S. H. Chen, H. Ma, X. J. Yi, X. Tao, H. C. Wang, and C. J. Ke, "Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation," Sens. Actuators A 115, 28-31 (2004).
[CrossRef]

2001

X. J. Wang, H. D. Li, Y. J. Fei, X. Wang, Y. Y. Xiong, Y. X. Nie, and K. A. Feng, "XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering," Appl. Surf. Sci. 177, 8-14 (2001).
[CrossRef]

1999

M. A. Sobhan, M. R. Islam, and K. A. Khan, "Preparation and properties of V2O5 thin films for energy-efficient selective-surface applications," Appl. Energy 64, 345-351 (1999).
[CrossRef]

1996

D. C. Yin, N. K. Xu, J. Y. Zhang, and X. L. Zheng, "Vanadium dioxide films with good electrical switching property," J. Phys. D 29, 1051-1057 (1996).
[CrossRef]

1994

M. F. Becker, A. B. Buckman, and R. M. Walser, "Femtosecond laser excitation of the semiconductor-metal phase transition in VO2," Appl. Phys. Lett. 65, 1507-1509 (1994).
[CrossRef]

1993

S. W. Lu, L. S. Hou, and F. X. Gan, "Preparation and optical properties of phase-change VO2 thin films," J. Mater. Sci. 28, 2169-2177 (1993).
[CrossRef]

1991

1984

F. C. Case, "Modifications in the phase transition properties of predeposited VO2 films," J. Vac. Sci. Technol. A 2, 1509-1512 (1984).
[CrossRef]

1971

W. R. Roach, "Holographic storage in VO2," Appl. Phys. Lett. 19, 453-455 (1971).
[CrossRef]

J. B. Goodenough, "The two components of the crystallographic transition in VO2," J. Solid State Chem. 3, 490-500 (1971).
[CrossRef]

1959

F. J. Morin, "Oxides which show a metal-to-insulator transition at the Neel temperature," Phys. Rev. Lett. 3, 34-36 (1959).
[CrossRef]

Becker, M. F.

M. F. Becker, A. B. Buckman, and R. M. Walser, "Femtosecond laser excitation of the semiconductor-metal phase transition in VO2," Appl. Phys. Lett. 65, 1507-1509 (1994).
[CrossRef]

Buckman, A. B.

M. F. Becker, A. B. Buckman, and R. M. Walser, "Femtosecond laser excitation of the semiconductor-metal phase transition in VO2," Appl. Phys. Lett. 65, 1507-1509 (1994).
[CrossRef]

Case, F. C.

F. C. Case, "Modifications in the phase transition properties of predeposited VO2 films," J. Vac. Sci. Technol. A 2, 1509-1512 (1984).
[CrossRef]

Chain, E. E.

Chen, M. X.

S. H. Chen, H. Ma, X. J. Yi, H. C. Wang, X. Tao, M. X. Chen, X. W. Li, and C. J. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Technol. 45, 239-242 (2004).
[CrossRef]

Chen, S. H.

S. H. Chen, H. Ma, X. J. Yi, H. C. Wang, X. Tao, M. X. Chen, X. W. Li, and C. J. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Technol. 45, 239-242 (2004).
[CrossRef]

S. H. Chen, H. Ma, X. J. Yi, X. Tao, H. C. Wang, and C. J. Ke, "Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation," Sens. Actuators A 115, 28-31 (2004).
[CrossRef]

Fei, Y. J.

X. J. Wang, H. D. Li, Y. J. Fei, X. Wang, Y. Y. Xiong, Y. X. Nie, and K. A. Feng, "XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering," Appl. Surf. Sci. 177, 8-14 (2001).
[CrossRef]

Feng, K. A.

X. J. Wang, H. D. Li, Y. J. Fei, X. Wang, Y. Y. Xiong, Y. X. Nie, and K. A. Feng, "XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering," Appl. Surf. Sci. 177, 8-14 (2001).
[CrossRef]

Gan, F. X.

S. W. Lu, L. S. Hou, and F. X. Gan, "Preparation and optical properties of phase-change VO2 thin films," J. Mater. Sci. 28, 2169-2177 (1993).
[CrossRef]

Goodenough, J. B.

J. B. Goodenough, "The two components of the crystallographic transition in VO2," J. Solid State Chem. 3, 490-500 (1971).
[CrossRef]

Hou, L. S.

S. W. Lu, L. S. Hou, and F. X. Gan, "Preparation and optical properties of phase-change VO2 thin films," J. Mater. Sci. 28, 2169-2177 (1993).
[CrossRef]

Islam, M. R.

M. A. Sobhan, M. R. Islam, and K. A. Khan, "Preparation and properties of V2O5 thin films for energy-efficient selective-surface applications," Appl. Energy 64, 345-351 (1999).
[CrossRef]

Ke, C. J.

S. H. Chen, H. Ma, X. J. Yi, H. C. Wang, X. Tao, M. X. Chen, X. W. Li, and C. J. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Technol. 45, 239-242 (2004).
[CrossRef]

S. H. Chen, H. Ma, X. J. Yi, X. Tao, H. C. Wang, and C. J. Ke, "Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation," Sens. Actuators A 115, 28-31 (2004).
[CrossRef]

Khan, K. A.

M. A. Sobhan, M. R. Islam, and K. A. Khan, "Preparation and properties of V2O5 thin films for energy-efficient selective-surface applications," Appl. Energy 64, 345-351 (1999).
[CrossRef]

Li, H. D.

X. J. Wang, H. D. Li, Y. J. Fei, X. Wang, Y. Y. Xiong, Y. X. Nie, and K. A. Feng, "XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering," Appl. Surf. Sci. 177, 8-14 (2001).
[CrossRef]

Li, X. W.

S. H. Chen, H. Ma, X. J. Yi, H. C. Wang, X. Tao, M. X. Chen, X. W. Li, and C. J. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Technol. 45, 239-242 (2004).
[CrossRef]

Lu, S. W.

S. W. Lu, L. S. Hou, and F. X. Gan, "Preparation and optical properties of phase-change VO2 thin films," J. Mater. Sci. 28, 2169-2177 (1993).
[CrossRef]

Ma, H.

S. H. Chen, H. Ma, X. J. Yi, H. C. Wang, X. Tao, M. X. Chen, X. W. Li, and C. J. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Technol. 45, 239-242 (2004).
[CrossRef]

S. H. Chen, H. Ma, X. J. Yi, X. Tao, H. C. Wang, and C. J. Ke, "Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation," Sens. Actuators A 115, 28-31 (2004).
[CrossRef]

Morin, F. J.

F. J. Morin, "Oxides which show a metal-to-insulator transition at the Neel temperature," Phys. Rev. Lett. 3, 34-36 (1959).
[CrossRef]

Nie, Y. X.

X. J. Wang, H. D. Li, Y. J. Fei, X. Wang, Y. Y. Xiong, Y. X. Nie, and K. A. Feng, "XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering," Appl. Surf. Sci. 177, 8-14 (2001).
[CrossRef]

Roach, W. R.

W. R. Roach, "Holographic storage in VO2," Appl. Phys. Lett. 19, 453-455 (1971).
[CrossRef]

Sobhan, M. A.

M. A. Sobhan, M. R. Islam, and K. A. Khan, "Preparation and properties of V2O5 thin films for energy-efficient selective-surface applications," Appl. Energy 64, 345-351 (1999).
[CrossRef]

Tao, X.

S. H. Chen, H. Ma, X. J. Yi, H. C. Wang, X. Tao, M. X. Chen, X. W. Li, and C. J. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Technol. 45, 239-242 (2004).
[CrossRef]

S. H. Chen, H. Ma, X. J. Yi, X. Tao, H. C. Wang, and C. J. Ke, "Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation," Sens. Actuators A 115, 28-31 (2004).
[CrossRef]

Walser, R. M.

M. F. Becker, A. B. Buckman, and R. M. Walser, "Femtosecond laser excitation of the semiconductor-metal phase transition in VO2," Appl. Phys. Lett. 65, 1507-1509 (1994).
[CrossRef]

Wang, H. C.

S. H. Chen, H. Ma, X. J. Yi, H. C. Wang, X. Tao, M. X. Chen, X. W. Li, and C. J. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Technol. 45, 239-242 (2004).
[CrossRef]

S. H. Chen, H. Ma, X. J. Yi, X. Tao, H. C. Wang, and C. J. Ke, "Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation," Sens. Actuators A 115, 28-31 (2004).
[CrossRef]

Wang, X.

X. J. Wang, H. D. Li, Y. J. Fei, X. Wang, Y. Y. Xiong, Y. X. Nie, and K. A. Feng, "XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering," Appl. Surf. Sci. 177, 8-14 (2001).
[CrossRef]

Wang, X. J.

X. J. Wang, H. D. Li, Y. J. Fei, X. Wang, Y. Y. Xiong, Y. X. Nie, and K. A. Feng, "XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering," Appl. Surf. Sci. 177, 8-14 (2001).
[CrossRef]

Xiong, Y. Y.

X. J. Wang, H. D. Li, Y. J. Fei, X. Wang, Y. Y. Xiong, Y. X. Nie, and K. A. Feng, "XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering," Appl. Surf. Sci. 177, 8-14 (2001).
[CrossRef]

Xu, N. K.

D. C. Yin, N. K. Xu, J. Y. Zhang, and X. L. Zheng, "Vanadium dioxide films with good electrical switching property," J. Phys. D 29, 1051-1057 (1996).
[CrossRef]

Yi, X. J.

S. H. Chen, H. Ma, X. J. Yi, X. Tao, H. C. Wang, and C. J. Ke, "Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation," Sens. Actuators A 115, 28-31 (2004).
[CrossRef]

S. H. Chen, H. Ma, X. J. Yi, H. C. Wang, X. Tao, M. X. Chen, X. W. Li, and C. J. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Technol. 45, 239-242 (2004).
[CrossRef]

Yin, D. C.

D. C. Yin, N. K. Xu, J. Y. Zhang, and X. L. Zheng, "Vanadium dioxide films with good electrical switching property," J. Phys. D 29, 1051-1057 (1996).
[CrossRef]

Zhang, J. Y.

D. C. Yin, N. K. Xu, J. Y. Zhang, and X. L. Zheng, "Vanadium dioxide films with good electrical switching property," J. Phys. D 29, 1051-1057 (1996).
[CrossRef]

Zheng, X. L.

D. C. Yin, N. K. Xu, J. Y. Zhang, and X. L. Zheng, "Vanadium dioxide films with good electrical switching property," J. Phys. D 29, 1051-1057 (1996).
[CrossRef]

Appl. Energy

M. A. Sobhan, M. R. Islam, and K. A. Khan, "Preparation and properties of V2O5 thin films for energy-efficient selective-surface applications," Appl. Energy 64, 345-351 (1999).
[CrossRef]

Appl. Opt.

Appl. Phys. Lett.

W. R. Roach, "Holographic storage in VO2," Appl. Phys. Lett. 19, 453-455 (1971).
[CrossRef]

M. F. Becker, A. B. Buckman, and R. M. Walser, "Femtosecond laser excitation of the semiconductor-metal phase transition in VO2," Appl. Phys. Lett. 65, 1507-1509 (1994).
[CrossRef]

Appl. Surf. Sci.

X. J. Wang, H. D. Li, Y. J. Fei, X. Wang, Y. Y. Xiong, Y. X. Nie, and K. A. Feng, "XRD and Raman study of vanadium oxide thin films deposited on fused silica substrates by RF magnetron sputtering," Appl. Surf. Sci. 177, 8-14 (2001).
[CrossRef]

Infrared Phys. Technol.

S. H. Chen, H. Ma, X. J. Yi, H. C. Wang, X. Tao, M. X. Chen, X. W. Li, and C. J. Ke, "Optical switch based on vanadium dioxide thin films," Infrared Phys. Technol. 45, 239-242 (2004).
[CrossRef]

J. Mater. Sci.

S. W. Lu, L. S. Hou, and F. X. Gan, "Preparation and optical properties of phase-change VO2 thin films," J. Mater. Sci. 28, 2169-2177 (1993).
[CrossRef]

J. Phys. D

D. C. Yin, N. K. Xu, J. Y. Zhang, and X. L. Zheng, "Vanadium dioxide films with good electrical switching property," J. Phys. D 29, 1051-1057 (1996).
[CrossRef]

J. Solid State Chem.

J. B. Goodenough, "The two components of the crystallographic transition in VO2," J. Solid State Chem. 3, 490-500 (1971).
[CrossRef]

J. Vac. Sci. Technol. A

F. C. Case, "Modifications in the phase transition properties of predeposited VO2 films," J. Vac. Sci. Technol. A 2, 1509-1512 (1984).
[CrossRef]

Phys. Rev. Lett.

F. J. Morin, "Oxides which show a metal-to-insulator transition at the Neel temperature," Phys. Rev. Lett. 3, 34-36 (1959).
[CrossRef]

Sens. Actuators A

S. H. Chen, H. Ma, X. J. Yi, X. Tao, H. C. Wang, and C. J. Ke, "Smart VO2 thin film for protection of sensitive infrared detectors from strong laser radiation," Sens. Actuators A 115, 28-31 (2004).
[CrossRef]

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Figures (5)

Fig. 1
Fig. 1

XRD pattern of a VO2 thin-film sample.

Fig. 2
Fig. 2

Transmittance of VO2 and V2O5 thin films fabricated on glass at visible and IR wavelengths.

Fig. 3
Fig. 3

Experimental setup.

Fig. 4
Fig. 4

(a) Typical incident laser waveform and (b) transmitted laser waveform through a V2O5 thin film.

Fig. 5
Fig. 5

Transmitted laser waveform and temperature of vanadium oxide thin films during laser irradiation.

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