Abstract

We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd0.5-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz.

© 2005 Optical Society of America

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  1. U. Keller, D. A. B. Miller, G. D. Boyd, T. H. Chiu, J. F. Ferguson, M. T. Asom, “Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an A-FPSA,” Opt. Lett. 17, 505–507 (1992).
    [CrossRef] [PubMed]
  2. B. Zhang, G. Li, M. Chen, Z. Zhang, Y. Wang, “Passive mode-locking of a diode-end-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” Opt Lett. 28, 1829–1831 (2003).
    [CrossRef] [PubMed]
  3. L. Krainer, R. Paschotta, J. Aus der Au, C. Honninger, U. Keller, M. Moser, D. Kopf, K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69, 245–247 (1999).
    [CrossRef]
  4. S. Zhang, E. Wu, H. Pan, H. Zeng, “Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” IEEE J. Quantum Electron. 40, 505–508 (2004).
    [CrossRef]
  5. G. J. Spühler, S. Reffert, M. Haiml, M. Moser, U. Keller, “Output-coupling semiconductor saturable absorber mirror,” Appl. Phys. Lett. 78, 2733–2735 (2001).
    [CrossRef]
  6. T. T. Kajara, A. L. Gaeta, “Q switching of a diode-pumped Nd:YAG laser with GaAs,” Opt. Lett. 21, 1244–1246 (1996).
    [CrossRef]
  7. J. Kong, D. Y. Tang, S. P. Ng, B. Zhao, L. J. Qin, X. L. Meng, “Diode-pumped passively mode-locked Nd:GdVO4 laser with a GaAs saturable absorber mirror,” Appl. Phys. B A79, 203–206 (2004).
    [CrossRef]
  8. J. Liu, Z. Wang, X. Meng, Z. Shao, B. Ozygus, A. Ding, H. Weber, “Improvement of passive Q-switching performance reached with a new Nd-doped mixed vanadate crystal Nd:Gd0.64Y0.36VO4,” Opt. Lett. 28, 2330–2332 (2003).
    [CrossRef] [PubMed]
  9. J.-L. He, Y.-X. Fan, J. Du, Y.-G. Wang, S. Liu, H.-T. Wang, L.-H. Zhang, Y. Hang, “4-ps passively mode locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable absorber mirror,” Opt. Lett. 29, 2803–2805 (2004).
    [CrossRef] [PubMed]
  10. R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
    [CrossRef]

2004 (3)

S. Zhang, E. Wu, H. Pan, H. Zeng, “Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” IEEE J. Quantum Electron. 40, 505–508 (2004).
[CrossRef]

J. Kong, D. Y. Tang, S. P. Ng, B. Zhao, L. J. Qin, X. L. Meng, “Diode-pumped passively mode-locked Nd:GdVO4 laser with a GaAs saturable absorber mirror,” Appl. Phys. B A79, 203–206 (2004).
[CrossRef]

J.-L. He, Y.-X. Fan, J. Du, Y.-G. Wang, S. Liu, H.-T. Wang, L.-H. Zhang, Y. Hang, “4-ps passively mode locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable absorber mirror,” Opt. Lett. 29, 2803–2805 (2004).
[CrossRef] [PubMed]

2003 (2)

J. Liu, Z. Wang, X. Meng, Z. Shao, B. Ozygus, A. Ding, H. Weber, “Improvement of passive Q-switching performance reached with a new Nd-doped mixed vanadate crystal Nd:Gd0.64Y0.36VO4,” Opt. Lett. 28, 2330–2332 (2003).
[CrossRef] [PubMed]

B. Zhang, G. Li, M. Chen, Z. Zhang, Y. Wang, “Passive mode-locking of a diode-end-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” Opt Lett. 28, 1829–1831 (2003).
[CrossRef] [PubMed]

2001 (1)

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, U. Keller, “Output-coupling semiconductor saturable absorber mirror,” Appl. Phys. Lett. 78, 2733–2735 (2001).
[CrossRef]

2000 (1)

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

1999 (1)

L. Krainer, R. Paschotta, J. Aus der Au, C. Honninger, U. Keller, M. Moser, D. Kopf, K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69, 245–247 (1999).
[CrossRef]

1996 (1)

1992 (1)

Asom, M. T.

Aus der Au, J.

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

L. Krainer, R. Paschotta, J. Aus der Au, C. Honninger, U. Keller, M. Moser, D. Kopf, K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69, 245–247 (1999).
[CrossRef]

Boyd, G. D.

Chen, M.

B. Zhang, G. Li, M. Chen, Z. Zhang, Y. Wang, “Passive mode-locking of a diode-end-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” Opt Lett. 28, 1829–1831 (2003).
[CrossRef] [PubMed]

Chiu, T. H.

Ding, A.

Du, J.

Erhard, S.

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

Fan, Y.-X.

Ferguson, J. F.

Gaeta, A. L.

Giesen, A.

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

Haiml, M.

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, U. Keller, “Output-coupling semiconductor saturable absorber mirror,” Appl. Phys. Lett. 78, 2733–2735 (2001).
[CrossRef]

Hang, Y.

He, J.-L.

Honninger, C.

L. Krainer, R. Paschotta, J. Aus der Au, C. Honninger, U. Keller, M. Moser, D. Kopf, K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69, 245–247 (1999).
[CrossRef]

Hövel, R.

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

Kajara, T. T.

Karszewski, M.

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

Keller, U.

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, U. Keller, “Output-coupling semiconductor saturable absorber mirror,” Appl. Phys. Lett. 78, 2733–2735 (2001).
[CrossRef]

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

L. Krainer, R. Paschotta, J. Aus der Au, C. Honninger, U. Keller, M. Moser, D. Kopf, K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69, 245–247 (1999).
[CrossRef]

U. Keller, D. A. B. Miller, G. D. Boyd, T. H. Chiu, J. F. Ferguson, M. T. Asom, “Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an A-FPSA,” Opt. Lett. 17, 505–507 (1992).
[CrossRef] [PubMed]

Kong, J.

J. Kong, D. Y. Tang, S. P. Ng, B. Zhao, L. J. Qin, X. L. Meng, “Diode-pumped passively mode-locked Nd:GdVO4 laser with a GaAs saturable absorber mirror,” Appl. Phys. B A79, 203–206 (2004).
[CrossRef]

Kopf, D.

L. Krainer, R. Paschotta, J. Aus der Au, C. Honninger, U. Keller, M. Moser, D. Kopf, K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69, 245–247 (1999).
[CrossRef]

Krainer, L.

L. Krainer, R. Paschotta, J. Aus der Au, C. Honninger, U. Keller, M. Moser, D. Kopf, K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69, 245–247 (1999).
[CrossRef]

Li, G.

B. Zhang, G. Li, M. Chen, Z. Zhang, Y. Wang, “Passive mode-locking of a diode-end-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” Opt Lett. 28, 1829–1831 (2003).
[CrossRef] [PubMed]

Liu, J.

Liu, S.

Meng, X.

Meng, X. L.

J. Kong, D. Y. Tang, S. P. Ng, B. Zhao, L. J. Qin, X. L. Meng, “Diode-pumped passively mode-locked Nd:GdVO4 laser with a GaAs saturable absorber mirror,” Appl. Phys. B A79, 203–206 (2004).
[CrossRef]

Miller, D. A. B.

Morier-Genoud, F.

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

Moser, M.

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, U. Keller, “Output-coupling semiconductor saturable absorber mirror,” Appl. Phys. Lett. 78, 2733–2735 (2001).
[CrossRef]

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

L. Krainer, R. Paschotta, J. Aus der Au, C. Honninger, U. Keller, M. Moser, D. Kopf, K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69, 245–247 (1999).
[CrossRef]

Ng, S. P.

J. Kong, D. Y. Tang, S. P. Ng, B. Zhao, L. J. Qin, X. L. Meng, “Diode-pumped passively mode-locked Nd:GdVO4 laser with a GaAs saturable absorber mirror,” Appl. Phys. B A79, 203–206 (2004).
[CrossRef]

Ozygus, B.

Pan, H.

S. Zhang, E. Wu, H. Pan, H. Zeng, “Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” IEEE J. Quantum Electron. 40, 505–508 (2004).
[CrossRef]

Paschotta, R.

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

L. Krainer, R. Paschotta, J. Aus der Au, C. Honninger, U. Keller, M. Moser, D. Kopf, K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69, 245–247 (1999).
[CrossRef]

Qin, L. J.

J. Kong, D. Y. Tang, S. P. Ng, B. Zhao, L. J. Qin, X. L. Meng, “Diode-pumped passively mode-locked Nd:GdVO4 laser with a GaAs saturable absorber mirror,” Appl. Phys. B A79, 203–206 (2004).
[CrossRef]

Reffert, S.

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, U. Keller, “Output-coupling semiconductor saturable absorber mirror,” Appl. Phys. Lett. 78, 2733–2735 (2001).
[CrossRef]

Shao, Z.

Spühler, G. J.

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, U. Keller, “Output-coupling semiconductor saturable absorber mirror,” Appl. Phys. Lett. 78, 2733–2735 (2001).
[CrossRef]

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

Tang, D. Y.

J. Kong, D. Y. Tang, S. P. Ng, B. Zhao, L. J. Qin, X. L. Meng, “Diode-pumped passively mode-locked Nd:GdVO4 laser with a GaAs saturable absorber mirror,” Appl. Phys. B A79, 203–206 (2004).
[CrossRef]

Wang, H.-T.

Wang, Y.

B. Zhang, G. Li, M. Chen, Z. Zhang, Y. Wang, “Passive mode-locking of a diode-end-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” Opt Lett. 28, 1829–1831 (2003).
[CrossRef] [PubMed]

Wang, Y.-G.

Wang, Z.

Weber, H.

Weingarten, K. J.

L. Krainer, R. Paschotta, J. Aus der Au, C. Honninger, U. Keller, M. Moser, D. Kopf, K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69, 245–247 (1999).
[CrossRef]

Wu, E.

S. Zhang, E. Wu, H. Pan, H. Zeng, “Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” IEEE J. Quantum Electron. 40, 505–508 (2004).
[CrossRef]

Zeng, H.

S. Zhang, E. Wu, H. Pan, H. Zeng, “Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” IEEE J. Quantum Electron. 40, 505–508 (2004).
[CrossRef]

Zhang, B.

B. Zhang, G. Li, M. Chen, Z. Zhang, Y. Wang, “Passive mode-locking of a diode-end-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” Opt Lett. 28, 1829–1831 (2003).
[CrossRef] [PubMed]

Zhang, L.-H.

Zhang, S.

S. Zhang, E. Wu, H. Pan, H. Zeng, “Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” IEEE J. Quantum Electron. 40, 505–508 (2004).
[CrossRef]

Zhang, Z.

B. Zhang, G. Li, M. Chen, Z. Zhang, Y. Wang, “Passive mode-locking of a diode-end-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” Opt Lett. 28, 1829–1831 (2003).
[CrossRef] [PubMed]

Zhao, B.

J. Kong, D. Y. Tang, S. P. Ng, B. Zhao, L. J. Qin, X. L. Meng, “Diode-pumped passively mode-locked Nd:GdVO4 laser with a GaAs saturable absorber mirror,” Appl. Phys. B A79, 203–206 (2004).
[CrossRef]

Appl. Phys. B (3)

L. Krainer, R. Paschotta, J. Aus der Au, C. Honninger, U. Keller, M. Moser, D. Kopf, K. J. Weingarten, “Passively mode-locked Nd:YVO4 laser with up to 13 GHz repetition rate,” Appl. Phys. B 69, 245–247 (1999).
[CrossRef]

J. Kong, D. Y. Tang, S. P. Ng, B. Zhao, L. J. Qin, X. L. Meng, “Diode-pumped passively mode-locked Nd:GdVO4 laser with a GaAs saturable absorber mirror,” Appl. Phys. B A79, 203–206 (2004).
[CrossRef]

R. Paschotta, J. Aus der Au, G. J. Spühler, F. Morier-Genoud, R. Hövel, M. Moser, S. Erhard, M. Karszewski, A. Giesen, U. Keller, “Diode-pumped passively mode-locked lasers with high average power,” Appl. Phys. B 70, S25–S31 (2000).
[CrossRef]

Appl. Phys. Lett. (1)

G. J. Spühler, S. Reffert, M. Haiml, M. Moser, U. Keller, “Output-coupling semiconductor saturable absorber mirror,” Appl. Phys. Lett. 78, 2733–2735 (2001).
[CrossRef]

IEEE J. Quantum Electron. (1)

S. Zhang, E. Wu, H. Pan, H. Zeng, “Passive mode locking in a diode-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” IEEE J. Quantum Electron. 40, 505–508 (2004).
[CrossRef]

Opt Lett. (1)

B. Zhang, G. Li, M. Chen, Z. Zhang, Y. Wang, “Passive mode-locking of a diode-end-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror,” Opt Lett. 28, 1829–1831 (2003).
[CrossRef] [PubMed]

Opt. Lett. (4)

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Figures (5)

Fig. 1
Fig. 1

Measured transmission spectrum of the LT In0.25Ga0.75As absorber and its schematic structure (inset).

Fig. 2
Fig. 2

Configuration of passively mode-locked Nd:Gd0.5Y0.5VO4 laser.

Fig. 3
Fig. 3

Dependence of the average output power on the incident pump power.

Fig. 4
Fig. 4

Pulse train of mode-locked Nd:Gd0.5Y0.5VO4 laser.

Fig. 5
Fig. 5

(a) Laser output spectrum (center wavelength = 1063.5 nm) and (b) autocorrelation signal of cw mode-locked Nd:Gd0.5Y0.5VO4 laser pulses.

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