Abstract

A high-quality gadolinium vanadate (GdVO4) crystal with 7-at. % thulium as the starting material was grown by the Czochralski technique. The measured absorption spectra exhibited sufficient absorption coefficients for laser diodes (LDs) for neodymium laser pumping: 6.0 cm−1 for π polarization and 6.2 cm−1 for σ polarization at 808 nm. Laser oscillation was carried out with single-stripe 808-nm LDs in an end-pumping configuration. A slope efficiency of 28% and a threshold of 750 mW were exhibited with respect to the absorbed pump power. An output power of 420 mW was achieved at an absorbed power of 2.4 W. It was demonstrated that Tm:GdVO4 is a useful material for 2-µm lasers, particularly in a compact LD-pumped system.

© 2005 Optical Society of America

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  1. L. F. Johnson, J. E. Geusic, L. G. Van Uitert, “Coherent oscillations from Tm3+, Ho3+, Yb3+and Er3+ions in yttrium aluminum garnet,” Appl. Phys. Lett. 7, 127–129 (1965).
    [CrossRef]
  2. J. A. Caird, L. G. DeShazer, J. Nella, “Characteristics of room-temperature 2.3-µm laser emission from Tm3+in YAG and YAIO3,” IEEE J. Quantum Electron. QE-11, 874–881 (1975).
    [CrossRef]
  3. A. I. Zagumennyi, V. G. Ostroumov, I. A. Shcherbakov, T. Jensen, J. P. Meyen, G. Huber, “The Nd:GdVO4crystal: a new material for diode-pumped lasers,” Sov. J. Quantum Electron. 22, 1071–1072 (1992).
    [CrossRef]
  4. T. Jensen, V. G. Ostroumov, J.-P. Meyn, G. Huber, A. I. Zagumennyi, I. A. Shcherbakov, “Spectroscopic characterization and laser performance of diode-laser-pumped Nd:GdVO4,” Appl. Phys. B 58, 373–379 (1994).
    [CrossRef]
  5. C. Q. Wang, Y. T. Chow, L. Reekie, W. A. Gambling, H. J. Zhang, L. Zhu, X. L. Meng, “A comparative study of the laser performance of diode-laser-pumped Nd:GdVO4and Nd: YVO4crystals,” Appl. Phys. B 70, 769–772 (2000).
    [CrossRef]
  6. A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
    [CrossRef]
  7. J. J. Zayhowski, J. Harrison, C. Dill, J. Ochoa, “Tm: YVO4microchip laser,” Appl. Opt. 34, 435–437 (1995).
    [CrossRef] [PubMed]
  8. V. A. Mikhailov, Y.-D. Zavartsev, A. I. Zagumennyi, V. G. Ostroumov, P. A. Studenikin, E. Heumann, G. Huber, I. A. Shcherbakov, “Tm3+:GdVO4—a new efficient medium for diode-pumped 2-µm lasers,” Quantum Electron. 27, 13–14 (1997).
    [CrossRef]
  9. Chr. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y.-D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Performance of a Tm3+:GdVO4microchip laser at 1.9 µm,” Opt. Commun. 153, 63–67 (1998).
    [CrossRef]
  10. C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Emission properties of a Tm3+:GdVO4microchip laser at 1.9 µm,” Appl. Phys. B 67, 545–548 (1998).
    [CrossRef]
  11. C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “A diode-pumped 1.4-W Tm3+:GdVO4microchip laser at 1.9 µm,” IEEE J. Quantum Electron. 34, 2380–2382 (1998).
    [CrossRef]
  12. D. S. Sumida, T. Y. Fan, “Effect of radiation trapping on fluorescence lifetime and emission cross section measurements in solid-state laser media,” Opt. Lett. 19, 1343–1345 (1994).
    [CrossRef] [PubMed]

2000 (1)

C. Q. Wang, Y. T. Chow, L. Reekie, W. A. Gambling, H. J. Zhang, L. Zhu, X. L. Meng, “A comparative study of the laser performance of diode-laser-pumped Nd:GdVO4and Nd: YVO4crystals,” Appl. Phys. B 70, 769–772 (2000).
[CrossRef]

1999 (1)

A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
[CrossRef]

1998 (3)

Chr. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y.-D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Performance of a Tm3+:GdVO4microchip laser at 1.9 µm,” Opt. Commun. 153, 63–67 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Emission properties of a Tm3+:GdVO4microchip laser at 1.9 µm,” Appl. Phys. B 67, 545–548 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “A diode-pumped 1.4-W Tm3+:GdVO4microchip laser at 1.9 µm,” IEEE J. Quantum Electron. 34, 2380–2382 (1998).
[CrossRef]

1997 (1)

V. A. Mikhailov, Y.-D. Zavartsev, A. I. Zagumennyi, V. G. Ostroumov, P. A. Studenikin, E. Heumann, G. Huber, I. A. Shcherbakov, “Tm3+:GdVO4—a new efficient medium for diode-pumped 2-µm lasers,” Quantum Electron. 27, 13–14 (1997).
[CrossRef]

1995 (1)

1994 (2)

D. S. Sumida, T. Y. Fan, “Effect of radiation trapping on fluorescence lifetime and emission cross section measurements in solid-state laser media,” Opt. Lett. 19, 1343–1345 (1994).
[CrossRef] [PubMed]

T. Jensen, V. G. Ostroumov, J.-P. Meyn, G. Huber, A. I. Zagumennyi, I. A. Shcherbakov, “Spectroscopic characterization and laser performance of diode-laser-pumped Nd:GdVO4,” Appl. Phys. B 58, 373–379 (1994).
[CrossRef]

1992 (1)

A. I. Zagumennyi, V. G. Ostroumov, I. A. Shcherbakov, T. Jensen, J. P. Meyen, G. Huber, “The Nd:GdVO4crystal: a new material for diode-pumped lasers,” Sov. J. Quantum Electron. 22, 1071–1072 (1992).
[CrossRef]

1975 (1)

J. A. Caird, L. G. DeShazer, J. Nella, “Characteristics of room-temperature 2.3-µm laser emission from Tm3+in YAG and YAIO3,” IEEE J. Quantum Electron. QE-11, 874–881 (1975).
[CrossRef]

1965 (1)

L. F. Johnson, J. E. Geusic, L. G. Van Uitert, “Coherent oscillations from Tm3+, Ho3+, Yb3+and Er3+ions in yttrium aluminum garnet,” Appl. Phys. Lett. 7, 127–129 (1965).
[CrossRef]

Caird, J. A.

J. A. Caird, L. G. DeShazer, J. Nella, “Characteristics of room-temperature 2.3-µm laser emission from Tm3+in YAG and YAIO3,” IEEE J. Quantum Electron. QE-11, 874–881 (1975).
[CrossRef]

Chow, Y. T.

C. Q. Wang, Y. T. Chow, L. Reekie, W. A. Gambling, H. J. Zhang, L. Zhu, X. L. Meng, “A comparative study of the laser performance of diode-laser-pumped Nd:GdVO4and Nd: YVO4crystals,” Appl. Phys. B 70, 769–772 (2000).
[CrossRef]

DeShazer, L. G.

J. A. Caird, L. G. DeShazer, J. Nella, “Characteristics of room-temperature 2.3-µm laser emission from Tm3+in YAG and YAIO3,” IEEE J. Quantum Electron. QE-11, 874–881 (1975).
[CrossRef]

Dill, C.

Fan, T. Y.

Gambling, W. A.

C. Q. Wang, Y. T. Chow, L. Reekie, W. A. Gambling, H. J. Zhang, L. Zhu, X. L. Meng, “A comparative study of the laser performance of diode-laser-pumped Nd:GdVO4and Nd: YVO4crystals,” Appl. Phys. B 70, 769–772 (2000).
[CrossRef]

Geusic, J. E.

L. F. Johnson, J. E. Geusic, L. G. Van Uitert, “Coherent oscillations from Tm3+, Ho3+, Yb3+and Er3+ions in yttrium aluminum garnet,” Appl. Phys. Lett. 7, 127–129 (1965).
[CrossRef]

Harrison, J.

Heumann, E.

V. A. Mikhailov, Y.-D. Zavartsev, A. I. Zagumennyi, V. G. Ostroumov, P. A. Studenikin, E. Heumann, G. Huber, I. A. Shcherbakov, “Tm3+:GdVO4—a new efficient medium for diode-pumped 2-µm lasers,” Quantum Electron. 27, 13–14 (1997).
[CrossRef]

Huber, G.

V. A. Mikhailov, Y.-D. Zavartsev, A. I. Zagumennyi, V. G. Ostroumov, P. A. Studenikin, E. Heumann, G. Huber, I. A. Shcherbakov, “Tm3+:GdVO4—a new efficient medium for diode-pumped 2-µm lasers,” Quantum Electron. 27, 13–14 (1997).
[CrossRef]

T. Jensen, V. G. Ostroumov, J.-P. Meyn, G. Huber, A. I. Zagumennyi, I. A. Shcherbakov, “Spectroscopic characterization and laser performance of diode-laser-pumped Nd:GdVO4,” Appl. Phys. B 58, 373–379 (1994).
[CrossRef]

A. I. Zagumennyi, V. G. Ostroumov, I. A. Shcherbakov, T. Jensen, J. P. Meyen, G. Huber, “The Nd:GdVO4crystal: a new material for diode-pumped lasers,” Sov. J. Quantum Electron. 22, 1071–1072 (1992).
[CrossRef]

Jensen, T.

T. Jensen, V. G. Ostroumov, J.-P. Meyn, G. Huber, A. I. Zagumennyi, I. A. Shcherbakov, “Spectroscopic characterization and laser performance of diode-laser-pumped Nd:GdVO4,” Appl. Phys. B 58, 373–379 (1994).
[CrossRef]

A. I. Zagumennyi, V. G. Ostroumov, I. A. Shcherbakov, T. Jensen, J. P. Meyen, G. Huber, “The Nd:GdVO4crystal: a new material for diode-pumped lasers,” Sov. J. Quantum Electron. 22, 1071–1072 (1992).
[CrossRef]

Johnson, L. F.

L. F. Johnson, J. E. Geusic, L. G. Van Uitert, “Coherent oscillations from Tm3+, Ho3+, Yb3+and Er3+ions in yttrium aluminum garnet,” Appl. Phys. Lett. 7, 127–129 (1965).
[CrossRef]

Luthy, W.

A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
[CrossRef]

Chr. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y.-D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Performance of a Tm3+:GdVO4microchip laser at 1.9 µm,” Opt. Commun. 153, 63–67 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Emission properties of a Tm3+:GdVO4microchip laser at 1.9 µm,” Appl. Phys. B 67, 545–548 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “A diode-pumped 1.4-W Tm3+:GdVO4microchip laser at 1.9 µm,” IEEE J. Quantum Electron. 34, 2380–2382 (1998).
[CrossRef]

Meng, X. L.

C. Q. Wang, Y. T. Chow, L. Reekie, W. A. Gambling, H. J. Zhang, L. Zhu, X. L. Meng, “A comparative study of the laser performance of diode-laser-pumped Nd:GdVO4and Nd: YVO4crystals,” Appl. Phys. B 70, 769–772 (2000).
[CrossRef]

Meyen, J. P.

A. I. Zagumennyi, V. G. Ostroumov, I. A. Shcherbakov, T. Jensen, J. P. Meyen, G. Huber, “The Nd:GdVO4crystal: a new material for diode-pumped lasers,” Sov. J. Quantum Electron. 22, 1071–1072 (1992).
[CrossRef]

Meyn, J.-P.

T. Jensen, V. G. Ostroumov, J.-P. Meyn, G. Huber, A. I. Zagumennyi, I. A. Shcherbakov, “Spectroscopic characterization and laser performance of diode-laser-pumped Nd:GdVO4,” Appl. Phys. B 58, 373–379 (1994).
[CrossRef]

Mikhailov, V. A.

V. A. Mikhailov, Y.-D. Zavartsev, A. I. Zagumennyi, V. G. Ostroumov, P. A. Studenikin, E. Heumann, G. Huber, I. A. Shcherbakov, “Tm3+:GdVO4—a new efficient medium for diode-pumped 2-µm lasers,” Quantum Electron. 27, 13–14 (1997).
[CrossRef]

Nella, J.

J. A. Caird, L. G. DeShazer, J. Nella, “Characteristics of room-temperature 2.3-µm laser emission from Tm3+in YAG and YAIO3,” IEEE J. Quantum Electron. QE-11, 874–881 (1975).
[CrossRef]

Ochoa, J.

Ostroumov, V. G.

V. A. Mikhailov, Y.-D. Zavartsev, A. I. Zagumennyi, V. G. Ostroumov, P. A. Studenikin, E. Heumann, G. Huber, I. A. Shcherbakov, “Tm3+:GdVO4—a new efficient medium for diode-pumped 2-µm lasers,” Quantum Electron. 27, 13–14 (1997).
[CrossRef]

T. Jensen, V. G. Ostroumov, J.-P. Meyn, G. Huber, A. I. Zagumennyi, I. A. Shcherbakov, “Spectroscopic characterization and laser performance of diode-laser-pumped Nd:GdVO4,” Appl. Phys. B 58, 373–379 (1994).
[CrossRef]

A. I. Zagumennyi, V. G. Ostroumov, I. A. Shcherbakov, T. Jensen, J. P. Meyen, G. Huber, “The Nd:GdVO4crystal: a new material for diode-pumped lasers,” Sov. J. Quantum Electron. 22, 1071–1072 (1992).
[CrossRef]

Popov, P. A.

A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
[CrossRef]

Reekie, L.

C. Q. Wang, Y. T. Chow, L. Reekie, W. A. Gambling, H. J. Zhang, L. Zhu, X. L. Meng, “A comparative study of the laser performance of diode-laser-pumped Nd:GdVO4and Nd: YVO4crystals,” Appl. Phys. B 70, 769–772 (2000).
[CrossRef]

Shcherbakov, I. A.

A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Emission properties of a Tm3+:GdVO4microchip laser at 1.9 µm,” Appl. Phys. B 67, 545–548 (1998).
[CrossRef]

Chr. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y.-D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Performance of a Tm3+:GdVO4microchip laser at 1.9 µm,” Opt. Commun. 153, 63–67 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “A diode-pumped 1.4-W Tm3+:GdVO4microchip laser at 1.9 µm,” IEEE J. Quantum Electron. 34, 2380–2382 (1998).
[CrossRef]

V. A. Mikhailov, Y.-D. Zavartsev, A. I. Zagumennyi, V. G. Ostroumov, P. A. Studenikin, E. Heumann, G. Huber, I. A. Shcherbakov, “Tm3+:GdVO4—a new efficient medium for diode-pumped 2-µm lasers,” Quantum Electron. 27, 13–14 (1997).
[CrossRef]

T. Jensen, V. G. Ostroumov, J.-P. Meyn, G. Huber, A. I. Zagumennyi, I. A. Shcherbakov, “Spectroscopic characterization and laser performance of diode-laser-pumped Nd:GdVO4,” Appl. Phys. B 58, 373–379 (1994).
[CrossRef]

A. I. Zagumennyi, V. G. Ostroumov, I. A. Shcherbakov, T. Jensen, J. P. Meyen, G. Huber, “The Nd:GdVO4crystal: a new material for diode-pumped lasers,” Sov. J. Quantum Electron. 22, 1071–1072 (1992).
[CrossRef]

Studenikin, P. A.

A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
[CrossRef]

Chr. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y.-D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Performance of a Tm3+:GdVO4microchip laser at 1.9 µm,” Opt. Commun. 153, 63–67 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Emission properties of a Tm3+:GdVO4microchip laser at 1.9 µm,” Appl. Phys. B 67, 545–548 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “A diode-pumped 1.4-W Tm3+:GdVO4microchip laser at 1.9 µm,” IEEE J. Quantum Electron. 34, 2380–2382 (1998).
[CrossRef]

V. A. Mikhailov, Y.-D. Zavartsev, A. I. Zagumennyi, V. G. Ostroumov, P. A. Studenikin, E. Heumann, G. Huber, I. A. Shcherbakov, “Tm3+:GdVO4—a new efficient medium for diode-pumped 2-µm lasers,” Quantum Electron. 27, 13–14 (1997).
[CrossRef]

Sumida, D. S.

Van Uitert, L. G.

L. F. Johnson, J. E. Geusic, L. G. Van Uitert, “Coherent oscillations from Tm3+, Ho3+, Yb3+and Er3+ions in yttrium aluminum garnet,” Appl. Phys. Lett. 7, 127–129 (1965).
[CrossRef]

Vlasov, V. I.

A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
[CrossRef]

Chr. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y.-D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Performance of a Tm3+:GdVO4microchip laser at 1.9 µm,” Opt. Commun. 153, 63–67 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “A diode-pumped 1.4-W Tm3+:GdVO4microchip laser at 1.9 µm,” IEEE J. Quantum Electron. 34, 2380–2382 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Emission properties of a Tm3+:GdVO4microchip laser at 1.9 µm,” Appl. Phys. B 67, 545–548 (1998).
[CrossRef]

Wang, C. Q.

C. Q. Wang, Y. T. Chow, L. Reekie, W. A. Gambling, H. J. Zhang, L. Zhu, X. L. Meng, “A comparative study of the laser performance of diode-laser-pumped Nd:GdVO4and Nd: YVO4crystals,” Appl. Phys. B 70, 769–772 (2000).
[CrossRef]

Weber, H. P.

A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Emission properties of a Tm3+:GdVO4microchip laser at 1.9 µm,” Appl. Phys. B 67, 545–548 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “A diode-pumped 1.4-W Tm3+:GdVO4microchip laser at 1.9 µm,” IEEE J. Quantum Electron. 34, 2380–2382 (1998).
[CrossRef]

Chr. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y.-D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Performance of a Tm3+:GdVO4microchip laser at 1.9 µm,” Opt. Commun. 153, 63–67 (1998).
[CrossRef]

Wyss, C. P.

A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “A diode-pumped 1.4-W Tm3+:GdVO4microchip laser at 1.9 µm,” IEEE J. Quantum Electron. 34, 2380–2382 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Emission properties of a Tm3+:GdVO4microchip laser at 1.9 µm,” Appl. Phys. B 67, 545–548 (1998).
[CrossRef]

Wyss, Chr. P.

Chr. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y.-D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Performance of a Tm3+:GdVO4microchip laser at 1.9 µm,” Opt. Commun. 153, 63–67 (1998).
[CrossRef]

Zagumennyi, A. I.

A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
[CrossRef]

Chr. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y.-D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Performance of a Tm3+:GdVO4microchip laser at 1.9 µm,” Opt. Commun. 153, 63–67 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Emission properties of a Tm3+:GdVO4microchip laser at 1.9 µm,” Appl. Phys. B 67, 545–548 (1998).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “A diode-pumped 1.4-W Tm3+:GdVO4microchip laser at 1.9 µm,” IEEE J. Quantum Electron. 34, 2380–2382 (1998).
[CrossRef]

V. A. Mikhailov, Y.-D. Zavartsev, A. I. Zagumennyi, V. G. Ostroumov, P. A. Studenikin, E. Heumann, G. Huber, I. A. Shcherbakov, “Tm3+:GdVO4—a new efficient medium for diode-pumped 2-µm lasers,” Quantum Electron. 27, 13–14 (1997).
[CrossRef]

T. Jensen, V. G. Ostroumov, J.-P. Meyn, G. Huber, A. I. Zagumennyi, I. A. Shcherbakov, “Spectroscopic characterization and laser performance of diode-laser-pumped Nd:GdVO4,” Appl. Phys. B 58, 373–379 (1994).
[CrossRef]

A. I. Zagumennyi, V. G. Ostroumov, I. A. Shcherbakov, T. Jensen, J. P. Meyen, G. Huber, “The Nd:GdVO4crystal: a new material for diode-pumped lasers,” Sov. J. Quantum Electron. 22, 1071–1072 (1992).
[CrossRef]

Zavartsev, Y. D.

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “A diode-pumped 1.4-W Tm3+:GdVO4microchip laser at 1.9 µm,” IEEE J. Quantum Electron. 34, 2380–2382 (1998).
[CrossRef]

Zavartsev, Y.-D.

A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
[CrossRef]

Chr. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y.-D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Performance of a Tm3+:GdVO4microchip laser at 1.9 µm,” Opt. Commun. 153, 63–67 (1998).
[CrossRef]

V. A. Mikhailov, Y.-D. Zavartsev, A. I. Zagumennyi, V. G. Ostroumov, P. A. Studenikin, E. Heumann, G. Huber, I. A. Shcherbakov, “Tm3+:GdVO4—a new efficient medium for diode-pumped 2-µm lasers,” Quantum Electron. 27, 13–14 (1997).
[CrossRef]

Zavartsev, Yu. D.

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Emission properties of a Tm3+:GdVO4microchip laser at 1.9 µm,” Appl. Phys. B 67, 545–548 (1998).
[CrossRef]

Zayhowski, J. J.

Zhang, H. J.

C. Q. Wang, Y. T. Chow, L. Reekie, W. A. Gambling, H. J. Zhang, L. Zhu, X. L. Meng, “A comparative study of the laser performance of diode-laser-pumped Nd:GdVO4and Nd: YVO4crystals,” Appl. Phys. B 70, 769–772 (2000).
[CrossRef]

Zhu, L.

C. Q. Wang, Y. T. Chow, L. Reekie, W. A. Gambling, H. J. Zhang, L. Zhu, X. L. Meng, “A comparative study of the laser performance of diode-laser-pumped Nd:GdVO4and Nd: YVO4crystals,” Appl. Phys. B 70, 769–772 (2000).
[CrossRef]

Appl. Opt. (1)

Appl. Phys. (3)

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Yu. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Emission properties of a Tm3+:GdVO4microchip laser at 1.9 µm,” Appl. Phys. B 67, 545–548 (1998).
[CrossRef]

T. Jensen, V. G. Ostroumov, J.-P. Meyn, G. Huber, A. I. Zagumennyi, I. A. Shcherbakov, “Spectroscopic characterization and laser performance of diode-laser-pumped Nd:GdVO4,” Appl. Phys. B 58, 373–379 (1994).
[CrossRef]

C. Q. Wang, Y. T. Chow, L. Reekie, W. A. Gambling, H. J. Zhang, L. Zhu, X. L. Meng, “A comparative study of the laser performance of diode-laser-pumped Nd:GdVO4and Nd: YVO4crystals,” Appl. Phys. B 70, 769–772 (2000).
[CrossRef]

Appl. Phys. Lett. (1)

L. F. Johnson, J. E. Geusic, L. G. Van Uitert, “Coherent oscillations from Tm3+, Ho3+, Yb3+and Er3+ions in yttrium aluminum garnet,” Appl. Phys. Lett. 7, 127–129 (1965).
[CrossRef]

IEEE J. Quantum Electron. (2)

J. A. Caird, L. G. DeShazer, J. Nella, “Characteristics of room-temperature 2.3-µm laser emission from Tm3+in YAG and YAIO3,” IEEE J. Quantum Electron. QE-11, 874–881 (1975).
[CrossRef]

C. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y. D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “A diode-pumped 1.4-W Tm3+:GdVO4microchip laser at 1.9 µm,” IEEE J. Quantum Electron. 34, 2380–2382 (1998).
[CrossRef]

Opt. Commun. (1)

Chr. P. Wyss, W. Luthy, H. P. Weber, V. I. Vlasov, Y.-D. Zavartsev, P. A. Studenikin, A. I. Zagumennyi, I. A. Shcherbakov, “Performance of a Tm3+:GdVO4microchip laser at 1.9 µm,” Opt. Commun. 153, 63–67 (1998).
[CrossRef]

Opt. Lett. (1)

Quantum Electron. (2)

V. A. Mikhailov, Y.-D. Zavartsev, A. I. Zagumennyi, V. G. Ostroumov, P. A. Studenikin, E. Heumann, G. Huber, I. A. Shcherbakov, “Tm3+:GdVO4—a new efficient medium for diode-pumped 2-µm lasers,” Quantum Electron. 27, 13–14 (1997).
[CrossRef]

A. I. Zagumennyi, Y.-D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4crystal and the operational characteristics of a microchip laser based on it,” Quantum Electron. 29, 298–300 (1999).
[CrossRef]

Sov. J. Quantum Electron. (1)

A. I. Zagumennyi, V. G. Ostroumov, I. A. Shcherbakov, T. Jensen, J. P. Meyen, G. Huber, “The Nd:GdVO4crystal: a new material for diode-pumped lasers,” Sov. J. Quantum Electron. 22, 1071–1072 (1992).
[CrossRef]

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Figures (7)

Fig. 1
Fig. 1

Experimental setup for crystal growth by the CZ method.

Fig. 2
Fig. 2

Normalized Tm concentration as a function of a solidified fraction; k is the effective distribution coefficient.

Fig. 3
Fig. 3

Absorption spectra of GdVO4 doped with 5.6-at. % Tm [linewidths 6.5 (π) and 13.5 (σ)] and of YAG doped with 5-at. % Tm.

Fig. 4
Fig. 4

Polarization-resolved fluorescence spectra near 1.9 µm.

Fig. 5
Fig. 5

Time decay of fluorescence intensity at 1.95 µm.

Fig. 6
Fig. 6

Relationship between absorbed pump power and output power. R, reflectivity of output coupler.

Fig. 7
Fig. 7

Long-term stability of cw Tm:GdVO4 laser at room temperature.

Equations (1)

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C s / C 0 = k ( 1 g ) k 1 ,

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