Abstract

A crucial component of lithographic modeling is the resist. Resists typically used at extreme-ultraviolet (EUV) wavelengths are derivatives of deep-ultraviolet chemically amplified resists. Models that describe these resists are often very complicated and are dependent on a large number of free parameters. Point-spread-function-based resist modeling serves as a simple alternative. I show this type of modeling to be a viable technique at EUV wavelengths by directly comparing modeling results with a variety of printing metrics, including process windows and isodense bias.

© 2004 Optical Society of America

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References

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  1. R. Stulen, D. Sweeney, “Extreme ultraviolet lithography,” IEEE J. Quantum Electron. 35, 694–699 (1999).
    [CrossRef]
  2. H. Meiling, J. Benschop, R. Hartman, P. Kürz, P. Høghøj, R. Geyl, N. Harned, “EXSTATIC: ASML’s α-tool development for EUVL,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 52–63 (2002).
    [CrossRef]
  3. K. Hamamoto, T. Watanabe, H. Hada, H. Komano, S. Kishimura, S. Okazaki, H. Kinoshita, “Fine pattern replication on 10 × 10-mm exposure area using the ETS-1 laboratory tool in HIT,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 664–671 (2002).
    [CrossRef]
  4. S. Robertson, P. Naulleau, D. O’Connell, K. McDonald, T. Delano, K. Goldberg, S. Hansen, K. Brown, R. Brainard, “Calibration of EUV-2D photoresist simulation parameters for accurate predictive modelling,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 900–909 (2003).
    [CrossRef]
  5. C. Ahn, H. Kim, K. Baik, “A novel approximate model for resist process,” in Optical Microlithography XI, L. Van den Hove, ed., Proc. SPIE3334, 752–763 (1998).
    [CrossRef]
  6. J. Hong, H. Kim, H. Yune, C. Ahn, Y. Koo, K. Baik, “Accuracy of diffused aerial image model for full-chip-level optical proximity correction,” in Optical Microlithography XIII, C. J. Progler, ed., Proc. SPIE4000, 1024–1032 (2000).
    [CrossRef]
  7. F. Houle, W. Hinsberg, M. Sanchez, J. Hoffnagle, “Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist,” J. Vac. Sci. Technol. B 20, 924–931 (2002).
    [CrossRef]
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    [CrossRef]
  9. H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
    [CrossRef]
  10. P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
    [CrossRef]
  11. D. W. Sweeney, R. Hudyma, H. N. Chapman, D. Shafer, “EUV optical design for a 100-nm CD imaging system,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 2–10 (1998).
    [CrossRef]
  12. S. Lee, D. Tichenor, P. Naulleau, D. O’Connell, “Lithographic aerial image contrast measurement in the EUV engineering test stand,” J. Vac. Sci. Technol. B 20, 2849–2852 (2002).
    [CrossRef]
  13. K. Goldberg, P. Naulleau, J. Bokor, H. Chapman, “Testing EUV optics with visible-light and EUV interferometry,” J. Vac. Sci. Technol. B 20, 2834–2839 (2002).
    [CrossRef]
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  16. T. Brunner, R. Ferguson, “Approximate models for resist processing effects,” in Optical Microlithography IX, G. E. Fuller, ed., Proc. SPIE2726, 198–207 (1996).
    [CrossRef]

2002 (5)

F. Houle, W. Hinsberg, M. Sanchez, J. Hoffnagle, “Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist,” J. Vac. Sci. Technol. B 20, 924–931 (2002).
[CrossRef]

J. A. Hoffnagle, W. D. Hinsberg, M. I. Sanchez, F. A. Houle, “Method of measuring the spatial resolution of a photoresist,” Opt. Lett. 27, 1776–1778 (2002).
[CrossRef]

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

S. Lee, D. Tichenor, P. Naulleau, D. O’Connell, “Lithographic aerial image contrast measurement in the EUV engineering test stand,” J. Vac. Sci. Technol. B 20, 2849–2852 (2002).
[CrossRef]

K. Goldberg, P. Naulleau, J. Bokor, H. Chapman, “Testing EUV optics with visible-light and EUV interferometry,” J. Vac. Sci. Technol. B 20, 2834–2839 (2002).
[CrossRef]

2001 (1)

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

1999 (1)

R. Stulen, D. Sweeney, “Extreme ultraviolet lithography,” IEEE J. Quantum Electron. 35, 694–699 (1999).
[CrossRef]

Ahn, C.

C. Ahn, H. Kim, K. Baik, “A novel approximate model for resist process,” in Optical Microlithography XI, L. Van den Hove, ed., Proc. SPIE3334, 752–763 (1998).
[CrossRef]

J. Hong, H. Kim, H. Yune, C. Ahn, Y. Koo, K. Baik, “Accuracy of diffused aerial image model for full-chip-level optical proximity correction,” in Optical Microlithography XIII, C. J. Progler, ed., Proc. SPIE4000, 1024–1032 (2000).
[CrossRef]

Anderson, E.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Attwood, D.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Baik, K.

J. Hong, H. Kim, H. Yune, C. Ahn, Y. Koo, K. Baik, “Accuracy of diffused aerial image model for full-chip-level optical proximity correction,” in Optical Microlithography XIII, C. J. Progler, ed., Proc. SPIE4000, 1024–1032 (2000).
[CrossRef]

C. Ahn, H. Kim, K. Baik, “A novel approximate model for resist process,” in Optical Microlithography XI, L. Van den Hove, ed., Proc. SPIE3334, 752–763 (1998).
[CrossRef]

Batson, P.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Benschop, J.

H. Meiling, J. Benschop, R. Hartman, P. Kürz, P. Høghøj, R. Geyl, N. Harned, “EXSTATIC: ASML’s α-tool development for EUVL,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 52–63 (2002).
[CrossRef]

Blaedel, K.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Bokor, J.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

K. Goldberg, P. Naulleau, J. Bokor, H. Chapman, “Testing EUV optics with visible-light and EUV interferometry,” J. Vac. Sci. Technol. B 20, 2834–2839 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Brainard, R.

S. Robertson, P. Naulleau, D. O’Connell, K. McDonald, T. Delano, K. Goldberg, S. Hansen, K. Brown, R. Brainard, “Calibration of EUV-2D photoresist simulation parameters for accurate predictive modelling,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 900–909 (2003).
[CrossRef]

Brown, K.

S. Robertson, P. Naulleau, D. O’Connell, K. McDonald, T. Delano, K. Goldberg, S. Hansen, K. Brown, R. Brainard, “Calibration of EUV-2D photoresist simulation parameters for accurate predictive modelling,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 900–909 (2003).
[CrossRef]

Brunner, T.

T. Brunner, R. Ferguson, “Approximate models for resist processing effects,” in Optical Microlithography IX, G. E. Fuller, ed., Proc. SPIE2726, 198–207 (1996).
[CrossRef]

Chapman, H.

K. Goldberg, P. Naulleau, J. Bokor, H. Chapman, “Testing EUV optics with visible-light and EUV interferometry,” J. Vac. Sci. Technol. B 20, 2834–2839 (2002).
[CrossRef]

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Chapman, H. N.

D. W. Sweeney, R. Hudyma, H. N. Chapman, D. Shafer, “EUV optical design for a 100-nm CD imaging system,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 2–10 (1998).
[CrossRef]

Delano, T.

S. Robertson, P. Naulleau, D. O’Connell, K. McDonald, T. Delano, K. Goldberg, S. Hansen, K. Brown, R. Brainard, “Calibration of EUV-2D photoresist simulation parameters for accurate predictive modelling,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 900–909 (2003).
[CrossRef]

Denham, P.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Ferguson, R.

T. Brunner, R. Ferguson, “Approximate models for resist processing effects,” in Optical Microlithography IX, G. E. Fuller, ed., Proc. SPIE2726, 198–207 (1996).
[CrossRef]

Folta, J.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Geyl, R.

H. Meiling, J. Benschop, R. Hartman, P. Kürz, P. Høghøj, R. Geyl, N. Harned, “EXSTATIC: ASML’s α-tool development for EUVL,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 52–63 (2002).
[CrossRef]

Goldberg, K.

K. Goldberg, P. Naulleau, J. Bokor, H. Chapman, “Testing EUV optics with visible-light and EUV interferometry,” J. Vac. Sci. Technol. B 20, 2834–2839 (2002).
[CrossRef]

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

S. Robertson, P. Naulleau, D. O’Connell, K. McDonald, T. Delano, K. Goldberg, S. Hansen, K. Brown, R. Brainard, “Calibration of EUV-2D photoresist simulation parameters for accurate predictive modelling,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 900–909 (2003).
[CrossRef]

Gullikson, E.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Gwyn, C.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Hada, H.

K. Hamamoto, T. Watanabe, H. Hada, H. Komano, S. Kishimura, S. Okazaki, H. Kinoshita, “Fine pattern replication on 10 × 10-mm exposure area using the ETS-1 laboratory tool in HIT,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 664–671 (2002).
[CrossRef]

Hale, L.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Hamamoto, K.

K. Hamamoto, T. Watanabe, H. Hada, H. Komano, S. Kishimura, S. Okazaki, H. Kinoshita, “Fine pattern replication on 10 × 10-mm exposure area using the ETS-1 laboratory tool in HIT,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 664–671 (2002).
[CrossRef]

Hansen, S.

S. Robertson, P. Naulleau, D. O’Connell, K. McDonald, T. Delano, K. Goldberg, S. Hansen, K. Brown, R. Brainard, “Calibration of EUV-2D photoresist simulation parameters for accurate predictive modelling,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 900–909 (2003).
[CrossRef]

Hanzen, R.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Harned, N.

H. Meiling, J. Benschop, R. Hartman, P. Kürz, P. Høghøj, R. Geyl, N. Harned, “EXSTATIC: ASML’s α-tool development for EUVL,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 52–63 (2002).
[CrossRef]

Harteneck, B.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Hartman, R.

H. Meiling, J. Benschop, R. Hartman, P. Kürz, P. Høghøj, R. Geyl, N. Harned, “EXSTATIC: ASML’s α-tool development for EUVL,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 52–63 (2002).
[CrossRef]

Hinsberg, W.

F. Houle, W. Hinsberg, M. Sanchez, J. Hoffnagle, “Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist,” J. Vac. Sci. Technol. B 20, 924–931 (2002).
[CrossRef]

Hinsberg, W. D.

Hoef, B.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Hoffnagle, J.

F. Houle, W. Hinsberg, M. Sanchez, J. Hoffnagle, “Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist,” J. Vac. Sci. Technol. B 20, 924–931 (2002).
[CrossRef]

Hoffnagle, J. A.

Høghøj, P.

H. Meiling, J. Benschop, R. Hartman, P. Kürz, P. Høghøj, R. Geyl, N. Harned, “EXSTATIC: ASML’s α-tool development for EUVL,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 52–63 (2002).
[CrossRef]

Hong, J.

J. Hong, H. Kim, H. Yune, C. Ahn, Y. Koo, K. Baik, “Accuracy of diffused aerial image model for full-chip-level optical proximity correction,” in Optical Microlithography XIII, C. J. Progler, ed., Proc. SPIE4000, 1024–1032 (2000).
[CrossRef]

Houle, F.

F. Houle, W. Hinsberg, M. Sanchez, J. Hoffnagle, “Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist,” J. Vac. Sci. Technol. B 20, 924–931 (2002).
[CrossRef]

Houle, F. A.

Hudyma, R.

D. W. Sweeney, R. Hudyma, H. N. Chapman, D. Shafer, “EUV optical design for a 100-nm CD imaging system,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 2–10 (1998).
[CrossRef]

Jackson, K.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Jefferson, K.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Kim, H.

J. Hong, H. Kim, H. Yune, C. Ahn, Y. Koo, K. Baik, “Accuracy of diffused aerial image model for full-chip-level optical proximity correction,” in Optical Microlithography XIII, C. J. Progler, ed., Proc. SPIE4000, 1024–1032 (2000).
[CrossRef]

C. Ahn, H. Kim, K. Baik, “A novel approximate model for resist process,” in Optical Microlithography XI, L. Van den Hove, ed., Proc. SPIE3334, 752–763 (1998).
[CrossRef]

Kinoshita, H.

K. Hamamoto, T. Watanabe, H. Hada, H. Komano, S. Kishimura, S. Okazaki, H. Kinoshita, “Fine pattern replication on 10 × 10-mm exposure area using the ETS-1 laboratory tool in HIT,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 664–671 (2002).
[CrossRef]

Kishimura, S.

K. Hamamoto, T. Watanabe, H. Hada, H. Komano, S. Kishimura, S. Okazaki, H. Kinoshita, “Fine pattern replication on 10 × 10-mm exposure area using the ETS-1 laboratory tool in HIT,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 664–671 (2002).
[CrossRef]

Klebanoff, L.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Komano, H.

K. Hamamoto, T. Watanabe, H. Hada, H. Komano, S. Kishimura, S. Okazaki, H. Kinoshita, “Fine pattern replication on 10 × 10-mm exposure area using the ETS-1 laboratory tool in HIT,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 664–671 (2002).
[CrossRef]

Koo, Y.

J. Hong, H. Kim, H. Yune, C. Ahn, Y. Koo, K. Baik, “Accuracy of diffused aerial image model for full-chip-level optical proximity correction,” in Optical Microlithography XIII, C. J. Progler, ed., Proc. SPIE4000, 1024–1032 (2000).
[CrossRef]

Kubiak, G.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Kürz, P.

H. Meiling, J. Benschop, R. Hartman, P. Kürz, P. Høghøj, R. Geyl, N. Harned, “EXSTATIC: ASML’s α-tool development for EUVL,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 52–63 (2002).
[CrossRef]

Lee, S.

S. Lee, D. Tichenor, P. Naulleau, D. O’Connell, “Lithographic aerial image contrast measurement in the EUV engineering test stand,” J. Vac. Sci. Technol. B 20, 2849–2852 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Leung, A.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Mack, C.

C. Mack, “Enhanced lumped parameter model for photolithography,” in Optical/Laser Microlithograph VII, T. A. Brunner, ed., Proc. SPIE2197, 501–510 (1994).
[CrossRef]

McDonald, K.

S. Robertson, P. Naulleau, D. O’Connell, K. McDonald, T. Delano, K. Goldberg, S. Hansen, K. Brown, R. Brainard, “Calibration of EUV-2D photoresist simulation parameters for accurate predictive modelling,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 900–909 (2003).
[CrossRef]

Meiling, H.

H. Meiling, J. Benschop, R. Hartman, P. Kürz, P. Høghøj, R. Geyl, N. Harned, “EXSTATIC: ASML’s α-tool development for EUVL,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 52–63 (2002).
[CrossRef]

Michan, U.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Mirkarimi, P.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Naulleau, P.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

K. Goldberg, P. Naulleau, J. Bokor, H. Chapman, “Testing EUV optics with visible-light and EUV interferometry,” J. Vac. Sci. Technol. B 20, 2834–2839 (2002).
[CrossRef]

S. Lee, D. Tichenor, P. Naulleau, D. O’Connell, “Lithographic aerial image contrast measurement in the EUV engineering test stand,” J. Vac. Sci. Technol. B 20, 2849–2852 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

S. Robertson, P. Naulleau, D. O’Connell, K. McDonald, T. Delano, K. Goldberg, S. Hansen, K. Brown, R. Brainard, “Calibration of EUV-2D photoresist simulation parameters for accurate predictive modelling,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 900–909 (2003).
[CrossRef]

O’Connell, D.

S. Lee, D. Tichenor, P. Naulleau, D. O’Connell, “Lithographic aerial image contrast measurement in the EUV engineering test stand,” J. Vac. Sci. Technol. B 20, 2849–2852 (2002).
[CrossRef]

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

S. Robertson, P. Naulleau, D. O’Connell, K. McDonald, T. Delano, K. Goldberg, S. Hansen, K. Brown, R. Brainard, “Calibration of EUV-2D photoresist simulation parameters for accurate predictive modelling,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 900–909 (2003).
[CrossRef]

Okazaki, S.

K. Hamamoto, T. Watanabe, H. Hada, H. Komano, S. Kishimura, S. Okazaki, H. Kinoshita, “Fine pattern replication on 10 × 10-mm exposure area using the ETS-1 laboratory tool in HIT,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 664–671 (2002).
[CrossRef]

Olynick, D.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Panning, E.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Ray-Chaudhuri, A.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Rekawa, S.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Replogle, W.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Robertson, S.

S. Robertson, P. Naulleau, D. O’Connell, K. McDonald, T. Delano, K. Goldberg, S. Hansen, K. Brown, R. Brainard, “Calibration of EUV-2D photoresist simulation parameters for accurate predictive modelling,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 900–909 (2003).
[CrossRef]

Rockett, P.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Salmassi, F.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Sanchez, M.

F. Houle, W. Hinsberg, M. Sanchez, J. Hoffnagle, “Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist,” J. Vac. Sci. Technol. B 20, 924–931 (2002).
[CrossRef]

Sanchez, M. I.

Shafer, D.

D. W. Sweeney, R. Hudyma, H. N. Chapman, D. Shafer, “EUV optical design for a 100-nm CD imaging system,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 2–10 (1998).
[CrossRef]

Sommargren, G.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Soufli, R.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Spiller, E.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Stulen, R.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

R. Stulen, D. Sweeney, “Extreme ultraviolet lithography,” IEEE J. Quantum Electron. 35, 694–699 (1999).
[CrossRef]

Sweeney, D.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

R. Stulen, D. Sweeney, “Extreme ultraviolet lithography,” IEEE J. Quantum Electron. 35, 694–699 (1999).
[CrossRef]

Sweeney, D. W.

D. W. Sweeney, R. Hudyma, H. N. Chapman, D. Shafer, “EUV optical design for a 100-nm CD imaging system,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 2–10 (1998).
[CrossRef]

Taylor, J.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Tichenor, D.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

S. Lee, D. Tichenor, P. Naulleau, D. O’Connell, “Lithographic aerial image contrast measurement in the EUV engineering test stand,” J. Vac. Sci. Technol. B 20, 2849–2852 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Walton, C.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

Watanabe, T.

K. Hamamoto, T. Watanabe, H. Hada, H. Komano, S. Kishimura, S. Okazaki, H. Kinoshita, “Fine pattern replication on 10 × 10-mm exposure area using the ETS-1 laboratory tool in HIT,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 664–671 (2002).
[CrossRef]

Wronosky, J.

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Yan, P.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

Yune, H.

J. Hong, H. Kim, H. Yune, C. Ahn, Y. Koo, K. Baik, “Accuracy of diffused aerial image model for full-chip-level optical proximity correction,” in Optical Microlithography XIII, C. J. Progler, ed., Proc. SPIE4000, 1024–1032 (2000).
[CrossRef]

Zhang, G.

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

IEEE J. Quantum Electron. (1)

R. Stulen, D. Sweeney, “Extreme ultraviolet lithography,” IEEE J. Quantum Electron. 35, 694–699 (1999).
[CrossRef]

J. Vac. Sci. Technol. B (5)

F. Houle, W. Hinsberg, M. Sanchez, J. Hoffnagle, “Influence of resist components on image blur in a patterned positive-tone chemically amplified photoresist,” J. Vac. Sci. Technol. B 20, 924–931 (2002).
[CrossRef]

H. Chapman, A. Ray-Chaudhuri, D. Tichenor, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, D. O’Connell, A. Leung, K. Jefferson, J. Wronosky, J. Taylor, L. Hale, K. Blaedel, E. Spiller, G. Sommargren, J. Folta, D. Sweeney, E. Gullikson, P. Naulleau, K. Goldberg, J. Bokor, D. Attwood, U. Michan, R. Hanzen, E. Panning, P. Yan, C. Gwyn, S. Lee, “First lithographic results from the EUV engineering test stand,” J. Vac. Sci. Technol. B 19, 2389–2395 (2001).
[CrossRef]

P. Naulleau, K. Goldberg, E. Anderson, D. Attwood, P. Batson, J. Bokor, P. Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, D. Sweeney, J. Taylor, C. Walton, D. O’Connell, R. Stulen, D. Tichenor, C. Gwyn, P. Yan, G. Zhang, “Sub-70-nm EUV lithography at the advanced light source static microfield exposure station using the ETS set-2 optic,” J. Vac. Sci. Technol. B 20, 2829–2833 (2002).
[CrossRef]

S. Lee, D. Tichenor, P. Naulleau, D. O’Connell, “Lithographic aerial image contrast measurement in the EUV engineering test stand,” J. Vac. Sci. Technol. B 20, 2849–2852 (2002).
[CrossRef]

K. Goldberg, P. Naulleau, J. Bokor, H. Chapman, “Testing EUV optics with visible-light and EUV interferometry,” J. Vac. Sci. Technol. B 20, 2834–2839 (2002).
[CrossRef]

Opt. Lett. (1)

Other (9)

D. W. Sweeney, R. Hudyma, H. N. Chapman, D. Shafer, “EUV optical design for a 100-nm CD imaging system,” in Emerging Lithographic Technologies II, Y. Vladimirsky, ed., Proc. SPIE3331, 2–10 (1998).
[CrossRef]

H. Meiling, J. Benschop, R. Hartman, P. Kürz, P. Høghøj, R. Geyl, N. Harned, “EXSTATIC: ASML’s α-tool development for EUVL,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 52–63 (2002).
[CrossRef]

K. Hamamoto, T. Watanabe, H. Hada, H. Komano, S. Kishimura, S. Okazaki, H. Kinoshita, “Fine pattern replication on 10 × 10-mm exposure area using the ETS-1 laboratory tool in HIT,” in Emerging Lithographic Technologies VI, R. L. Engelstad, ed., Proc. SPIE4688, 664–671 (2002).
[CrossRef]

S. Robertson, P. Naulleau, D. O’Connell, K. McDonald, T. Delano, K. Goldberg, S. Hansen, K. Brown, R. Brainard, “Calibration of EUV-2D photoresist simulation parameters for accurate predictive modelling,” in Emerging Lithographic Technologies VII, R. L. Engelstad, ed., Proc. SPIE5037, 900–909 (2003).
[CrossRef]

C. Ahn, H. Kim, K. Baik, “A novel approximate model for resist process,” in Optical Microlithography XI, L. Van den Hove, ed., Proc. SPIE3334, 752–763 (1998).
[CrossRef]

J. Hong, H. Kim, H. Yune, C. Ahn, Y. Koo, K. Baik, “Accuracy of diffused aerial image model for full-chip-level optical proximity correction,” in Optical Microlithography XIII, C. J. Progler, ed., Proc. SPIE4000, 1024–1032 (2000).
[CrossRef]

PROLITH is a registered trademark of KLA-Tencor Corporation, 160 Rio Robles, San Jose, California 95134.

C. Mack, “Enhanced lumped parameter model for photolithography,” in Optical/Laser Microlithograph VII, T. A. Brunner, ed., Proc. SPIE2197, 501–510 (1994).
[CrossRef]

T. Brunner, R. Ferguson, “Approximate models for resist processing effects,” in Optical Microlithography IX, G. E. Fuller, ed., Proc. SPIE2726, 198–207 (1996).
[CrossRef]

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Figures (9)

Fig. 1
Fig. 1

Experimentally measured DOF as a function of partial coherence σ and feature size for a 0.1-NA EUV optic operating at a wavelength of 13.4 nm. The DOF is determined based on an acceptable feature-size variation of ±10% and an exposure latitude of 10%.

Fig. 2
Fig. 2

Predicted DOF based on aerial-image modeling that assumes an ideal threshold resist. The aerial-image modeling incorporates the measured wave-front error, which includes measured frequencies over a radius of 1.5 μm in the image plane.

Fig. 3
Fig. 3

Predicted DOF based on aerial-image modeling combined with the PSF-based resist model. The PSF-based modeling serves as a good predictor of the experimental results both through feature size and through partial coherence.

Fig. 4
Fig. 4

Predicted DOF based on full chemically amplified resist modeling. Process-window calculations were performed with the PROLITH lithography simulation package.

Fig. 5
Fig. 5

Elbow pattern (60-nm) printed in 120-nm-thick layer of a Shipley EUV-2D resist. The illumination partial coherence was 0.7.

Fig. 6
Fig. 6

Mask feature corresponding to the printed feature in Fig. 5. The black regions correspond to exposed multilayers (open areas).

Fig. 7
Fig. 7

Predicted printed 60-nm elbow pattern with an ideal binary resist model.

Fig. 8
Fig. 8

Predicted printed 60-nm elbow pattern with the 50-nm Gaussian PSF resist model.

Fig. 9
Fig. 9

Predicted printed 60-nm elbow pattern with full chemically amplified resist modeling in PROLITH.

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