Abstract

Irradiation with intense ultraviolet laser pulses induced a large refractive-index change in 30GeO2—70SiO2 waveguide-grade thin films prepared by the plasma-enhanced chemical vapor deposition method, which contained a large amount of photoactive Ge2+ defects. The maximum index change in the as-deposited films by KrF and XeF excimer laser irradiation was estimated to be 1.2 × 10-3 and 0.28 × 10-3, respectively. These results clearly indicate that the photorefractivity of GeO2—SiO2 glasses is due to a Ge2+ defect in origin. The channel waveguide and the planar Bragg gratings were directly written in the photoactive Ge2+-enriched GeO2—SiO2 thin films by pulsed ultraviolet laser irradiation with a Cr-metal-loaded-type waveguide structure.

© 2003 Optical Society of America

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