Abstract
Irradiation with intense ultraviolet laser pulses induced a large refractive-index change in 30GeO2—70SiO2 waveguide-grade thin films prepared by the plasma-enhanced chemical vapor deposition method, which contained a large amount of photoactive Ge2+ defects. The maximum index change in the as-deposited films by KrF and XeF excimer laser irradiation was estimated to be 1.2 × 10-3 and 0.28 × 10-3, respectively. These results clearly indicate that the photorefractivity of GeO2—SiO2 glasses is due to a Ge2+ defect in origin. The channel waveguide and the planar Bragg gratings were directly written in the photoactive Ge2+-enriched GeO2—SiO2 thin films by pulsed ultraviolet laser irradiation with a Cr-metal-loaded-type waveguide structure.
© 2003 Optical Society of America
Full Article | PDF ArticleMore Like This
Akifumi Sakoh, Masahide Takahashi , Toshinobu Yoko, Junji Nishii, Hiroaki Nishiyama, and Isamu Miyamoto
Opt. Express 11(21) 2679-2688 (2003)
S. Sebastiani, G. Nunzi Conti, S. Pelli, G. C. Righini, A. Chiasera, M. Ferrari, and C. Tosello
Opt. Express 13(5) 1696-1701 (2005)
Takashi Saito, Tadahiko Hanada, Naoki Kitamura, and Mitsuhiro Kitamura
Appl. Opt. 37(12) 2242-2244 (1998)