Abstract

Si:H alloys are being investigated for the high-index material in an interference filter to provide spectral control in an application of thermophotovoltaic energy conversion. In particular, a multilayer edge filter is being developed to provide high transmission of photons with wavelengths between 1.0 and 2.4 µm and high reflectance for wavelengths outside this range. Thin films of Si:H were deposited by means of rf reactive sputtering. Deposition parameters were varied to optimize the H content in Si:H coatings such that the refractive index was greater than 3. Optical absorption near 1 µm and Si:H infrared absorptions near 5 and 12 µm were minimized.

© 2002 Optical Society of America

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  1. G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).
  2. B. A. Monk, Frequency Selective Surfaces, Theory and DesignWiley, New York (2000).
  3. P. F. Baldasaro, J. E. Raynolds, G. W. Charache, D. M. DePoy, C. T. Ballinger, T. Donovan, J. M. Borrego, “Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs,” J. Appl. Phys. 89, 3319–3327 (2001).
    [CrossRef]
  4. P. M. Martin, W. T. Pawlewicz, “Property composition relationships in sputter-deposited A-Si:H alloys,” Sol. Energy Mater. 2, 143–156 (1979/1980).
    [CrossRef]
  5. P. M. Martin, W. T. Pawlewicz, “Influence of sputtering conditions on H content and Si-H bonding in a-Si:H alloys,” J. Non-Cryst. Solids 45, 15–27 (1981).
    [CrossRef]
  6. M. Daouahi, A. Ben Othmane, K. Zellama, A. Zeinert, M. Essamet, H. Bouchriha, “Effect of hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered amorphous silicon films,” Solid State Commun. 120, 243–248 (2001).
    [CrossRef]
  7. E. C. Freeman, W. Paul, “Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon,” Phys. Rev. B 18, 4288–4300 (1978).
    [CrossRef]
  8. M. H. Brodsky, M. Cardona, J. J. Coumo, “Infrared and Raman spectra of silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering,” Phys Rev. B 16, 3556–3571 (1977).
    [CrossRef]
  9. J. C. Knights, G. Lucovsky, R. J. Newmanich, “Hydrogen bonding in silicon hydrogen alloys,” Philos. Mag. 30, 467–475 (1978).
  10. S. B. White, D. R. McKenzie, “An electron diffraction study of amorphous hydrogenated germanium-carbon thin films,” J. Appl. Phys. 68, 3194–3197 (1990).
    [CrossRef]
  11. W. Paul, T. D. Moustakas, D. A. Anderson, E. Freeman, “Properties of a-gallium arsenide containing hydrogen and other dopants,” Amorphous Liq. Semicond., Proc. Int. Conf., 7th, 467–471 (University of Edinburgh, Edinburgh, Scotland, 1977).
  12. N. F. Mott, E. A. Davis, Electronic Proceses in Non-Crystalline Materials (Clarendon, Oxford, 1979), p. 289.
  13. H. A. Macleod, Thin Film Optical Filters, 2nd ed. (McGraw-Hill, New York, 1989), p. 164.
  14. T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

2001 (2)

P. F. Baldasaro, J. E. Raynolds, G. W. Charache, D. M. DePoy, C. T. Ballinger, T. Donovan, J. M. Borrego, “Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs,” J. Appl. Phys. 89, 3319–3327 (2001).
[CrossRef]

M. Daouahi, A. Ben Othmane, K. Zellama, A. Zeinert, M. Essamet, H. Bouchriha, “Effect of hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered amorphous silicon films,” Solid State Commun. 120, 243–248 (2001).
[CrossRef]

1997 (1)

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

1990 (1)

S. B. White, D. R. McKenzie, “An electron diffraction study of amorphous hydrogenated germanium-carbon thin films,” J. Appl. Phys. 68, 3194–3197 (1990).
[CrossRef]

1981 (1)

P. M. Martin, W. T. Pawlewicz, “Influence of sputtering conditions on H content and Si-H bonding in a-Si:H alloys,” J. Non-Cryst. Solids 45, 15–27 (1981).
[CrossRef]

1978 (2)

E. C. Freeman, W. Paul, “Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon,” Phys. Rev. B 18, 4288–4300 (1978).
[CrossRef]

J. C. Knights, G. Lucovsky, R. J. Newmanich, “Hydrogen bonding in silicon hydrogen alloys,” Philos. Mag. 30, 467–475 (1978).

1977 (1)

M. H. Brodsky, M. Cardona, J. J. Coumo, “Infrared and Raman spectra of silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering,” Phys Rev. B 16, 3556–3571 (1977).
[CrossRef]

Anderson, D. A.

W. Paul, T. D. Moustakas, D. A. Anderson, E. Freeman, “Properties of a-gallium arsenide containing hydrogen and other dopants,” Amorphous Liq. Semicond., Proc. Int. Conf., 7th, 467–471 (University of Edinburgh, Edinburgh, Scotland, 1977).

Anderson, T.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Azarkevich, J.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Baldasaro, P.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Baldasaro, P. F.

P. F. Baldasaro, J. E. Raynolds, G. W. Charache, D. M. DePoy, C. T. Ballinger, T. Donovan, J. M. Borrego, “Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs,” J. Appl. Phys. 89, 3319–3327 (2001).
[CrossRef]

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

Ballinger, C.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Ballinger, C. T.

P. F. Baldasaro, J. E. Raynolds, G. W. Charache, D. M. DePoy, C. T. Ballinger, T. Donovan, J. M. Borrego, “Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs,” J. Appl. Phys. 89, 3319–3327 (2001).
[CrossRef]

Ben Othmane, A.

M. Daouahi, A. Ben Othmane, K. Zellama, A. Zeinert, M. Essamet, H. Bouchriha, “Effect of hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered amorphous silicon films,” Solid State Commun. 120, 243–248 (2001).
[CrossRef]

Borrego, J. M.

P. F. Baldasaro, J. E. Raynolds, G. W. Charache, D. M. DePoy, C. T. Ballinger, T. Donovan, J. M. Borrego, “Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs,” J. Appl. Phys. 89, 3319–3327 (2001).
[CrossRef]

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

Bouchriha, H.

M. Daouahi, A. Ben Othmane, K. Zellama, A. Zeinert, M. Essamet, H. Bouchriha, “Effect of hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered amorphous silicon films,” Solid State Commun. 120, 243–248 (2001).
[CrossRef]

Brodsky, M. H.

M. H. Brodsky, M. Cardona, J. J. Coumo, “Infrared and Raman spectra of silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering,” Phys Rev. B 16, 3556–3571 (1977).
[CrossRef]

Burger, S.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Campbell, B. C.

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

Cardines, R.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Cardona, M.

M. H. Brodsky, M. Cardona, J. J. Coumo, “Infrared and Raman spectra of silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering,” Phys Rev. B 16, 3556–3571 (1977).
[CrossRef]

Charache, G.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Charache, G. W.

P. F. Baldasaro, J. E. Raynolds, G. W. Charache, D. M. DePoy, C. T. Ballinger, T. Donovan, J. M. Borrego, “Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs,” J. Appl. Phys. 89, 3319–3327 (2001).
[CrossRef]

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

Coumo, J. J.

M. H. Brodsky, M. Cardona, J. J. Coumo, “Infrared and Raman spectra of silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering,” Phys Rev. B 16, 3556–3571 (1977).
[CrossRef]

Danielson, L.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Daouahi, M.

M. Daouahi, A. Ben Othmane, K. Zellama, A. Zeinert, M. Essamet, H. Bouchriha, “Effect of hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered amorphous silicon films,” Solid State Commun. 120, 243–248 (2001).
[CrossRef]

Davis, E. A.

N. F. Mott, E. A. Davis, Electronic Proceses in Non-Crystalline Materials (Clarendon, Oxford, 1979), p. 289.

DePoy, D.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

DePoy, D. M.

P. F. Baldasaro, J. E. Raynolds, G. W. Charache, D. M. DePoy, C. T. Ballinger, T. Donovan, J. M. Borrego, “Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs,” J. Appl. Phys. 89, 3319–3327 (2001).
[CrossRef]

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

Donovan, T.

P. F. Baldasaro, J. E. Raynolds, G. W. Charache, D. M. DePoy, C. T. Ballinger, T. Donovan, J. M. Borrego, “Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs,” J. Appl. Phys. 89, 3319–3327 (2001).
[CrossRef]

Dziendziel, R. J.

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

Ecker, L.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Egley, J. L.

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

Essamet, M.

M. Daouahi, A. Ben Othmane, K. Zellama, A. Zeinert, M. Essamet, H. Bouchriha, “Effect of hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered amorphous silicon films,” Solid State Commun. 120, 243–248 (2001).
[CrossRef]

Fahey, R. E.

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

Freeman, E.

W. Paul, T. D. Moustakas, D. A. Anderson, E. Freeman, “Properties of a-gallium arsenide containing hydrogen and other dopants,” Amorphous Liq. Semicond., Proc. Int. Conf., 7th, 467–471 (University of Edinburgh, Edinburgh, Scotland, 1977).

Freeman, E. C.

E. C. Freeman, W. Paul, “Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon,” Phys. Rev. B 18, 4288–4300 (1978).
[CrossRef]

Freeman, M.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Freeman, M. J.

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

Knights, J. C.

J. C. Knights, G. Lucovsky, R. J. Newmanich, “Hydrogen bonding in silicon hydrogen alloys,” Philos. Mag. 30, 467–475 (1978).

Les, J.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Locascio, M.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Lucovsky, G.

J. C. Knights, G. Lucovsky, R. J. Newmanich, “Hydrogen bonding in silicon hydrogen alloys,” Philos. Mag. 30, 467–475 (1978).

Macleod, H. A.

H. A. Macleod, Thin Film Optical Filters, 2nd ed. (McGraw-Hill, New York, 1989), p. 164.

Martin, P. M.

P. M. Martin, W. T. Pawlewicz, “Influence of sputtering conditions on H content and Si-H bonding in a-Si:H alloys,” J. Non-Cryst. Solids 45, 15–27 (1981).
[CrossRef]

P. M. Martin, W. T. Pawlewicz, “Property composition relationships in sputter-deposited A-Si:H alloys,” Sol. Energy Mater. 2, 143–156 (1979/1980).
[CrossRef]

McKenzie, D. R.

S. B. White, D. R. McKenzie, “An electron diffraction study of amorphous hydrogenated germanium-carbon thin films,” J. Appl. Phys. 68, 3194–3197 (1990).
[CrossRef]

Monk, B. A.

B. A. Monk, Frequency Selective Surfaces, Theory and DesignWiley, New York (2000).

Mott, N. F.

N. F. Mott, E. A. Davis, Electronic Proceses in Non-Crystalline Materials (Clarendon, Oxford, 1979), p. 289.

Moustakas, T. D.

W. Paul, T. D. Moustakas, D. A. Anderson, E. Freeman, “Properties of a-gallium arsenide containing hydrogen and other dopants,” Amorphous Liq. Semicond., Proc. Int. Conf., 7th, 467–471 (University of Edinburgh, Edinburgh, Scotland, 1977).

Newmanich, R. J.

J. C. Knights, G. Lucovsky, R. J. Newmanich, “Hydrogen bonding in silicon hydrogen alloys,” Philos. Mag. 30, 467–475 (1978).

Paul, W.

E. C. Freeman, W. Paul, “Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon,” Phys. Rev. B 18, 4288–4300 (1978).
[CrossRef]

W. Paul, T. D. Moustakas, D. A. Anderson, E. Freeman, “Properties of a-gallium arsenide containing hydrogen and other dopants,” Amorphous Liq. Semicond., Proc. Int. Conf., 7th, 467–471 (University of Edinburgh, Edinburgh, Scotland, 1977).

Pawlewicz, W. T.

P. M. Martin, W. T. Pawlewicz, “Influence of sputtering conditions on H content and Si-H bonding in a-Si:H alloys,” J. Non-Cryst. Solids 45, 15–27 (1981).
[CrossRef]

P. M. Martin, W. T. Pawlewicz, “Property composition relationships in sputter-deposited A-Si:H alloys,” Sol. Energy Mater. 2, 143–156 (1979/1980).
[CrossRef]

Raynolds, J.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

Raynolds, J. E.

P. F. Baldasaro, J. E. Raynolds, G. W. Charache, D. M. DePoy, C. T. Ballinger, T. Donovan, J. M. Borrego, “Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs,” J. Appl. Phys. 89, 3319–3327 (2001).
[CrossRef]

Sharps, P. R.

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

Timmons, M. L.

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

White, S. B.

S. B. White, D. R. McKenzie, “An electron diffraction study of amorphous hydrogenated germanium-carbon thin films,” J. Appl. Phys. 68, 3194–3197 (1990).
[CrossRef]

Zeinert, A.

M. Daouahi, A. Ben Othmane, K. Zellama, A. Zeinert, M. Essamet, H. Bouchriha, “Effect of hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered amorphous silicon films,” Solid State Commun. 120, 243–248 (2001).
[CrossRef]

Zellama, K.

M. Daouahi, A. Ben Othmane, K. Zellama, A. Zeinert, M. Essamet, H. Bouchriha, “Effect of hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered amorphous silicon films,” Solid State Commun. 120, 243–248 (2001).
[CrossRef]

Zhang, K.

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

AIP Conf Proc. (1)

G. W. Charache, D. M. DePoy, J. L. Egley, R. J. Dziendziel, M. J. Freeman, P. F. Baldasaro, B. C. Campbell, P. R. Sharps, M. L. Timmons, R. E. Fahey, K. Zhang, J. M. Borrego, “Electrical and optical properties of degenerately-doped n-type InxGal-xAs”, AIP Conf Proc. 401, 215–226 (1997).

J. Appl. Phys. (2)

P. F. Baldasaro, J. E. Raynolds, G. W. Charache, D. M. DePoy, C. T. Ballinger, T. Donovan, J. M. Borrego, “Thermodynamic analysis of thermophotovoltaic efficiency and power density tradeoffs,” J. Appl. Phys. 89, 3319–3327 (2001).
[CrossRef]

S. B. White, D. R. McKenzie, “An electron diffraction study of amorphous hydrogenated germanium-carbon thin films,” J. Appl. Phys. 68, 3194–3197 (1990).
[CrossRef]

J. Non-Cryst. Solids (1)

P. M. Martin, W. T. Pawlewicz, “Influence of sputtering conditions on H content and Si-H bonding in a-Si:H alloys,” J. Non-Cryst. Solids 45, 15–27 (1981).
[CrossRef]

Philos. Mag. (1)

J. C. Knights, G. Lucovsky, R. J. Newmanich, “Hydrogen bonding in silicon hydrogen alloys,” Philos. Mag. 30, 467–475 (1978).

Phys Rev. B (1)

M. H. Brodsky, M. Cardona, J. J. Coumo, “Infrared and Raman spectra of silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering,” Phys Rev. B 16, 3556–3571 (1977).
[CrossRef]

Phys. Rev. B (1)

E. C. Freeman, W. Paul, “Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon,” Phys. Rev. B 18, 4288–4300 (1978).
[CrossRef]

Sol. Energy Mater. (1)

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[CrossRef]

Solid State Commun. (1)

M. Daouahi, A. Ben Othmane, K. Zellama, A. Zeinert, M. Essamet, H. Bouchriha, “Effect of hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered amorphous silicon films,” Solid State Commun. 120, 243–248 (2001).
[CrossRef]

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H. A. Macleod, Thin Film Optical Filters, 2nd ed. (McGraw-Hill, New York, 1989), p. 164.

T. Anderson, C. Ballinger, G. Charache, L. Ecker, M. Locascio, J. Azarkevich, S. Burger, L. Danielson, M. Freeman, J. Raynolds, P. Baldasaro, R. Cardines, D. DePoy, J. Les, “TPV spectral control technology research and development efforts for FY 1999,” Lockheed Martin report ARP-AC-1057-DMD (Lockheed Martin, Schenectady, N.Y., 1999), p. 56.

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Figures (12)

Fig. 1
Fig. 1

Schematic diagram of 1-m deposition chamber.

Fig. 2
Fig. 2

Refractive index versus wavelength for 0% and 20% H2 flows and varied substrate temperatures.

Fig. 3
Fig. 3

Refractive index versus wavelength for substrate at ambient and H2 flow varied.

Fig. 4
Fig. 4

Refractive index versus wavelength for substrate at ambient, 20% H2 flow, and varied deposition rate.

Fig. 5
Fig. 5

Refractive index versus wavelength for substrate at ambient, 40% H2 flow, and varied deposition rate.

Fig. 6
Fig. 6

NIR extinction coefficient versus wavelength for 0% and 20% H2 flows and varied substrate temperatures.

Fig. 7
Fig. 7

NIR extinction coefficient versus wavelength for substrate at ambient and H2 flow varied.

Fig. 8
Fig. 8

NIR Extinction coefficient versus wavelength at ambient, 20% H2 flow, and varied deposition rate.

Fig. 9
Fig. 9

NIR extinction coefficient versus wavelength for substrate at ambient, 40% H2 flow, and varied deposition rate.

Fig. 10
Fig. 10

IR extinction coefficient versus wavelength for 20% H2 flow, varied substrate temperature, and deposition rate >1 Å/s.

Fig. 11
Fig. 11

IR extinction coefficient versus wavelength for 20% H2 flow, ambient substrate temperature, and varied deposition rate.

Fig. 12
Fig. 12

IR extinction coefficient versus wavelength for H2 flows of 20% and 40%, ambient substrate temperature, and deposition rate >1 Å/s.

Tables (1)

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Table 1 Estimated Weighted k Values

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